TWI339425B - Thin gaas die with copper back-metal structure - Google Patents

Thin gaas die with copper back-metal structure Download PDF

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Publication number
TWI339425B
TWI339425B TW092133454A TW92133454A TWI339425B TW I339425 B TWI339425 B TW I339425B TW 092133454 A TW092133454 A TW 092133454A TW 92133454 A TW92133454 A TW 92133454A TW I339425 B TWI339425 B TW I339425B
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TW
Taiwan
Prior art keywords
semiconductor device
back metal
substrate
solder
metal layer
Prior art date
Application number
TW092133454A
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English (en)
Chinese (zh)
Other versions
TW200416970A (en
Inventor
Alexander J Elliott
Jeffrey Dale Crowder
Monte Gene Miller
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Freescale Semiconductor Inc
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Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200416970A publication Critical patent/TW200416970A/zh
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Publication of TWI339425B publication Critical patent/TWI339425B/zh

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    • H—ELECTRICITY
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    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
TW092133454A 2002-11-27 2003-11-27 Thin gaas die with copper back-metal structure TWI339425B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/306,834 US6870243B2 (en) 2002-11-27 2002-11-27 Thin GaAs die with copper back-metal structure

Publications (2)

Publication Number Publication Date
TW200416970A TW200416970A (en) 2004-09-01
TWI339425B true TWI339425B (en) 2011-03-21

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TW092133454A TWI339425B (en) 2002-11-27 2003-11-27 Thin gaas die with copper back-metal structure

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US (2) US6870243B2 (enExample)
JP (1) JP2006517054A (enExample)
KR (1) KR20050085143A (enExample)
CN (1) CN1720610B (enExample)
AU (1) AU2003277129A1 (enExample)
TW (1) TWI339425B (enExample)
WO (1) WO2004051733A1 (enExample)

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US7923842B2 (en) 2006-03-16 2011-04-12 Skyworks Solutions, Inc. GaAs integrated circuit device and method of attaching same
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JP2013098481A (ja) * 2011-11-04 2013-05-20 Sumitomo Electric Device Innovations Inc 半導体装置
US8900969B2 (en) 2012-01-27 2014-12-02 Skyworks Solutions, Inc. Methods of stress balancing in gallium arsenide wafer processing
CN103377914A (zh) * 2012-04-18 2013-10-30 稳懋半导体股份有限公司 半导体元件背面铜金属的改良结构及其加工方法
US9093506B2 (en) 2012-05-08 2015-07-28 Skyworks Solutions, Inc. Process for fabricating gallium arsenide devices with copper contact layer
JP2014099547A (ja) * 2012-11-15 2014-05-29 Mitsubishi Electric Corp 電力半導体モジュールおよびその製造方法
US9530719B2 (en) 2014-06-13 2016-12-27 Skyworks Solutions, Inc. Direct die solder of gallium arsenide integrated circuit dies and methods of manufacturing gallium arsenide wafers
TWI660471B (zh) * 2017-10-06 2019-05-21 財團法人工業技術研究院 晶片封裝
US11133241B2 (en) 2019-06-28 2021-09-28 Stmicroelectronics, Inc. Semiconductor package with a cavity in a die pad for reducing voids in the solder
CN112989744B (zh) * 2021-02-08 2023-11-17 泰凌微电子(上海)股份有限公司 一种半导体芯片的封装设计方法以及装置

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US6870243B2 (en) 2005-03-22
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CN1720610B (zh) 2010-10-13
US20050127480A1 (en) 2005-06-16
CN1720610A (zh) 2006-01-11
TW200416970A (en) 2004-09-01
JP2006517054A (ja) 2006-07-13
US20040099932A1 (en) 2004-05-27
US7092890B2 (en) 2006-08-15

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