JP2006345003A5 - - Google Patents
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- Publication number
- JP2006345003A5 JP2006345003A5 JP2006254027A JP2006254027A JP2006345003A5 JP 2006345003 A5 JP2006345003 A5 JP 2006345003A5 JP 2006254027 A JP2006254027 A JP 2006254027A JP 2006254027 A JP2006254027 A JP 2006254027A JP 2006345003 A5 JP2006345003 A5 JP 2006345003A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- forming
- film
- gate electrode
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910052751 metal Inorganic materials 0.000 claims 32
- 239000002184 metal Substances 0.000 claims 32
- 229910021332 silicide Inorganic materials 0.000 claims 20
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 20
- 239000012535 impurity Substances 0.000 claims 17
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 14
- 230000015572 biosynthetic process Effects 0.000 claims 13
- 238000004519 manufacturing process Methods 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 11
- 238000000034 method Methods 0.000 claims 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims 6
- 238000000137 annealing Methods 0.000 claims 5
- 238000000059 patterning Methods 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 229910052719 titanium Inorganic materials 0.000 claims 3
- 239000010936 titanium Substances 0.000 claims 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006254027A JP4481284B2 (ja) | 2006-09-20 | 2006-09-20 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006254027A JP4481284B2 (ja) | 2006-09-20 | 2006-09-20 | 半導体装置の作製方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8307443A Division JPH10135475A (ja) | 1996-10-31 | 1996-10-31 | 半導体装置およびその作製方法 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009234439A Division JP4481361B2 (ja) | 2009-10-08 | 2009-10-08 | 半導体装置 |
| JP2010032871A Division JP4628485B2 (ja) | 2010-02-17 | 2010-02-17 | 薄膜トランジスタの作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006345003A JP2006345003A (ja) | 2006-12-21 |
| JP2006345003A5 true JP2006345003A5 (enExample) | 2009-11-26 |
| JP4481284B2 JP4481284B2 (ja) | 2010-06-16 |
Family
ID=37641657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006254027A Expired - Fee Related JP4481284B2 (ja) | 2006-09-20 | 2006-09-20 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4481284B2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100875432B1 (ko) | 2007-05-31 | 2008-12-22 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치 |
| KR100889626B1 (ko) | 2007-08-22 | 2009-03-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법 |
| KR100889627B1 (ko) | 2007-08-23 | 2009-03-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치 |
| JP2009260327A (ja) * | 2008-03-26 | 2009-11-05 | Advanced Lcd Technologies Development Center Co Ltd | 薄膜半導体装置およびその製造方法 |
| KR100982310B1 (ko) | 2008-03-27 | 2010-09-15 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
| KR100989136B1 (ko) | 2008-04-11 | 2010-10-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
| KR101002666B1 (ko) | 2008-07-14 | 2010-12-21 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
| US8741702B2 (en) * | 2008-10-24 | 2014-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4788160A (en) * | 1987-03-31 | 1988-11-29 | Texas Instruments Incorporated | Process for formation of shallow silicided junctions |
| JP3506445B2 (ja) * | 1992-05-12 | 2004-03-15 | 沖電気工業株式会社 | 半導体装置の製造方法 |
| JP3152739B2 (ja) * | 1992-05-19 | 2001-04-03 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
| JPH0766426A (ja) * | 1993-08-27 | 1995-03-10 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JPH07135323A (ja) * | 1993-10-20 | 1995-05-23 | Semiconductor Energy Lab Co Ltd | 薄膜状半導体集積回路およびその作製方法 |
| JP2833468B2 (ja) * | 1994-02-17 | 1998-12-09 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH07283400A (ja) * | 1994-04-08 | 1995-10-27 | Nippon Steel Corp | 半導体装置及びその製造方法 |
-
2006
- 2006-09-20 JP JP2006254027A patent/JP4481284B2/ja not_active Expired - Fee Related
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