JP2006324672A - 光抽出効率が改善された垂直構造窒化物半導体発光素子 - Google Patents
光抽出効率が改善された垂直構造窒化物半導体発光素子 Download PDFInfo
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- JP2006324672A JP2006324672A JP2006138871A JP2006138871A JP2006324672A JP 2006324672 A JP2006324672 A JP 2006324672A JP 2006138871 A JP2006138871 A JP 2006138871A JP 2006138871 A JP2006138871 A JP 2006138871A JP 2006324672 A JP2006324672 A JP 2006324672A
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- nitride semiconductor
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- H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05671—Chromium [Cr] as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
【解決手段】垂直構造窒化物半導体発光素子、光透過性を有する伝導性基板31上に順次に形成された第1導電型窒化物半導体層34、活性層35及び第2導電型窒化物半導体層36を含む。この垂直構造窒化物発光素子は、少なくとも上記伝導性基板の下面に形成され、光透過率が70%以上の伝導性物質からなり、その外部面に光を散乱させるための凸凹パターンが形成された伝導性光散乱層を含む。
【選択図】 図2−a
Description
34 第1導電型窒化物半導体層
35 活性層
36 第2導電型窒化物半導体層
37 伝導性光散乱層
39a、39b 第1及び第2電極
Claims (10)
- 光透過性を有する伝導性基板上に順次に形成された第1導電型窒化物半導体層、活性層及び第2導電型窒化物半導体層を含む垂直構造窒化物発光素子において、
少なくとも前記伝導性基板の下面に形成され、光透過率が70%以上の伝導性物質からなり、その外部面に光を散乱させるための凸凹パターンが形成された伝導性光散乱層を含むことを特徴とする垂直構造窒化物半導体発光素子。 - 前記伝導性光散乱層は光透過率が80%以上であることを特徴とする請求項1に記載の垂直構造窒化物半導体発光素子。
- 前記伝導性光散乱層はITO(Indium Tin Oxide)、SnO2 、Ga2 O3 、ZnO、MgO及びIn2 O3 で構成されたグループから選択された物質を含むことを特徴とする請求項1又は2に記載の垂直構造窒化物半導体発光素子。
- 前記伝導性光散乱層の凸凹パターン周期は約0.001〜10μmの範囲内であることを特徴とする請求項1〜3のいずれか一項に記載の垂直構造窒化物半導体発光素子。
- 前記伝導性基板は第1導電型GaN、Ga2 O3 、LiGaO3 、ZnOまたはSiCであることを特徴とする請求項1〜4のいずれか一項に記載の垂直構造窒化物半導体発光素子。
- 前記伝導性光散乱層は1.5〜2.4の範囲内の屈折率を有することを特徴とする請求項1〜5に記載の垂直構造窒化物半導体発光素子。
- 前記伝導性光散乱層は前記窒化物発光素子側面の少なくとも一部まで延長され形成されたことを特徴とする請求項1〜6のいずれか一項に記載の垂直構造窒化物半導体発光素子。
- 前記発光素子の側面まで延長された伝導性光散乱層と少なくとも前記第2導電型窒化物層及び活性層の間には絶縁層が形成されたことを特徴とする請求項7に記載の垂直構造窒化物半導体発光素子。
- 前記第2導電型窒化物層上面に形成された電極をさらに含み、前記電極は反射メタル層を含むことを特徴とする請求項1〜8のいずれか一項に記載の垂直構造窒化物半導体発光素子。
- 前記反射メタル層はAg、Al、Rh、Ru、Pt、Au、Cu、Pd、Cr、Ni、Co、Ti、In及びMoで構成されたグループから選択された少なくとも1種の金属層または合金層からなることを特徴とする請求項9に記載の垂直構造窒化物半導体発光素子。
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JP2011166148A (ja) * | 2010-02-12 | 2011-08-25 | Lg Innotek Co Ltd | 発光素子、発光素子の製造方法、及び発光素子パッケージ |
JP2012104849A (ja) * | 2010-02-12 | 2012-05-31 | Lg Innotek Co Ltd | 発光素子、発光素子の製造方法、及び発光素子パッケージ |
JP2010267994A (ja) * | 2010-07-26 | 2010-11-25 | Toshiba Corp | 発光素子 |
JP2013128112A (ja) * | 2011-12-16 | 2013-06-27 | Lg Innotek Co Ltd | 発光素子 |
US8742395B2 (en) | 2012-01-13 | 2014-06-03 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
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JP4777141B2 (ja) | 2011-09-21 |
US8373184B2 (en) | 2013-02-12 |
KR100638819B1 (ko) | 2006-10-27 |
US20060261323A1 (en) | 2006-11-23 |
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