JP2006318381A - 電圧発生回路 - Google Patents
電圧発生回路 Download PDFInfo
- Publication number
- JP2006318381A JP2006318381A JP2005142780A JP2005142780A JP2006318381A JP 2006318381 A JP2006318381 A JP 2006318381A JP 2005142780 A JP2005142780 A JP 2005142780A JP 2005142780 A JP2005142780 A JP 2005142780A JP 2006318381 A JP2006318381 A JP 2006318381A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- voltage
- circuit
- type
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 77
- 101100186847 Solanum lycopersicum NXD1 gene Proteins 0.000 claims description 25
- 239000004973 liquid crystal related substance Substances 0.000 description 23
- 238000010586 diagram Methods 0.000 description 15
- 239000011159 matrix material Substances 0.000 description 14
- HIHOWBSBBDRPDW-PTHRTHQKSA-N [(3s,8s,9s,10r,13r,14s,17r)-10,13-dimethyl-17-[(2r)-6-methylheptan-2-yl]-2,3,4,7,8,9,11,12,14,15,16,17-dodecahydro-1h-cyclopenta[a]phenanthren-3-yl] n-[2-(dimethylamino)ethyl]carbamate Chemical compound C1C=C2C[C@@H](OC(=O)NCCN(C)C)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2 HIHOWBSBBDRPDW-PTHRTHQKSA-N 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 238000012937 correction Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
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- 230000008859 change Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 101100513621 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) MND2 gene Proteins 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 101000592685 Homo sapiens Meiotic nuclear division protein 1 homolog Proteins 0.000 description 2
- 102100033679 Meiotic nuclear division protein 1 homolog Human genes 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 101001107782 Homo sapiens Iron-sulfur protein NUBPL Proteins 0.000 description 1
- 102100021998 Iron-sulfur protein NUBPL Human genes 0.000 description 1
- 101100072620 Streptomyces griseus ind2 gene Proteins 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
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- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/02—Shaping pulses by amplifying
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45726—Indexing scheme relating to differential amplifiers the LC comprising more than one switch, which are not cross coupled
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7227—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch in the supply circuit of the amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Liquid Crystal Display Device Control (AREA)
- Liquid Crystal (AREA)
- Control Of Electrical Variables (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005142780A JP2006318381A (ja) | 2005-05-16 | 2005-05-16 | 電圧発生回路 |
| US11/416,167 US7907136B2 (en) | 2005-05-16 | 2006-05-03 | Voltage generation circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005142780A JP2006318381A (ja) | 2005-05-16 | 2005-05-16 | 電圧発生回路 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007076177A Division JP4882819B2 (ja) | 2007-03-23 | 2007-03-23 | 電圧発生回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006318381A true JP2006318381A (ja) | 2006-11-24 |
| JP2006318381A5 JP2006318381A5 (enExample) | 2007-05-17 |
Family
ID=37462570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005142780A Withdrawn JP2006318381A (ja) | 2005-05-16 | 2005-05-16 | 電圧発生回路 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7907136B2 (enExample) |
| JP (1) | JP2006318381A (enExample) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008107516A (ja) * | 2006-10-25 | 2008-05-08 | Nec Electronics Corp | 表示装置、及び表示パネルドライバ |
| JP2008134496A (ja) * | 2006-11-29 | 2008-06-12 | Nec Electronics Corp | 階調電位発生回路、表示装置のデータドライバ、及びその表示装置 |
| JP2009015166A (ja) * | 2007-07-06 | 2009-01-22 | Nec Electronics Corp | 表示装置、及び表示パネルドライバ |
| JP2009070211A (ja) * | 2007-09-14 | 2009-04-02 | Panasonic Corp | 電圧発生回路 |
| JP2009146088A (ja) * | 2007-12-13 | 2009-07-02 | Hitachi Displays Ltd | 静電結合型信号送受信回路 |
| WO2010067644A1 (ja) * | 2008-12-09 | 2010-06-17 | 日本電信電話株式会社 | 電圧発生器、制御回路、ベクトル合成型移相器および光トランシーバ |
| WO2012123995A1 (ja) * | 2011-03-15 | 2012-09-20 | パナソニック株式会社 | 階調電圧発生回路及び表示装置 |
| WO2012123996A1 (ja) * | 2011-03-15 | 2012-09-20 | パナソニック株式会社 | 階調電圧発生回路及び表示装置 |
| JP2018124550A (ja) * | 2017-02-03 | 2018-08-09 | 株式会社半導体エネルギー研究所 | 半導体装置、表示パネル、表示装置、入出力装置、情報処理装置 |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4172471B2 (ja) * | 2005-06-17 | 2008-10-29 | セイコーエプソン株式会社 | 駆動回路、電気光学装置及び電子機器 |
| CN101460989B (zh) * | 2006-08-30 | 2011-04-27 | 夏普株式会社 | 显示装置 |
| JP4306763B2 (ja) * | 2007-04-19 | 2009-08-05 | セイコーエプソン株式会社 | ガンマ補正回路 |
| JP2008286953A (ja) * | 2007-05-16 | 2008-11-27 | Sony Corp | 表示装置及びその駆動方法と電子機器 |
| JP2009211053A (ja) * | 2008-02-06 | 2009-09-17 | Canon Inc | 表示パネルの駆動回路および表示装置 |
| JP2009193042A (ja) * | 2008-02-13 | 2009-08-27 | Samsung Mobile Display Co Ltd | ガンマ電圧生成部及びガンマ電圧生成方法とこれを利用した有機電界発光表示装置 |
| CN101308271B (zh) * | 2008-06-30 | 2011-10-26 | 昆山龙腾光电有限公司 | 液晶面板、液晶显示装置及其驱动方法 |
| WO2010114014A1 (ja) * | 2009-04-01 | 2010-10-07 | ローム株式会社 | 液晶駆動装置 |
| US7884747B2 (en) * | 2009-06-12 | 2011-02-08 | Analog Devices, Inc. | Digital to analog converters having circuit architectures to overcome switch losses |
| TWI489430B (zh) * | 2010-01-11 | 2015-06-21 | Novatek Microelectronics Corp | 顯示器的驅動裝置 |
| KR20150090945A (ko) * | 2014-01-29 | 2015-08-07 | 삼성전기주식회사 | 레벨쉬프터를 포함한 게이트드라이버 및 그의 구동방법 |
| TWI519064B (zh) * | 2014-06-09 | 2016-01-21 | 奕力科技股份有限公司 | 緩衝電路 |
| US9882552B2 (en) * | 2015-09-25 | 2018-01-30 | International Business Machines Corporation | Low power amplifier |
| US10311822B2 (en) | 2016-08-23 | 2019-06-04 | Apple Inc. | Content dependent common voltage driver systems and methods |
| WO2018078748A1 (ja) * | 2016-10-26 | 2018-05-03 | 堺ディスプレイプロダクト株式会社 | 液晶表示装置及び液晶表示装置の駆動方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3570405B2 (ja) | 2001-05-02 | 2004-09-29 | セイコーエプソン株式会社 | 電圧変換回路、これを用いた表示装置及び電子機器 |
| JP4437378B2 (ja) * | 2001-06-07 | 2010-03-24 | 株式会社日立製作所 | 液晶駆動装置 |
| US6970152B1 (en) * | 2002-11-05 | 2005-11-29 | National Semiconductor Corporation | Stacked amplifier arrangement for graphics displays |
| KR100515069B1 (ko) * | 2003-12-01 | 2005-09-16 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 차동증폭형 어드레스 입력 버퍼 |
-
2005
- 2005-05-16 JP JP2005142780A patent/JP2006318381A/ja not_active Withdrawn
-
2006
- 2006-05-03 US US11/416,167 patent/US7907136B2/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008107516A (ja) * | 2006-10-25 | 2008-05-08 | Nec Electronics Corp | 表示装置、及び表示パネルドライバ |
| JP2008134496A (ja) * | 2006-11-29 | 2008-06-12 | Nec Electronics Corp | 階調電位発生回路、表示装置のデータドライバ、及びその表示装置 |
| JP2009015166A (ja) * | 2007-07-06 | 2009-01-22 | Nec Electronics Corp | 表示装置、及び表示パネルドライバ |
| JP2009070211A (ja) * | 2007-09-14 | 2009-04-02 | Panasonic Corp | 電圧発生回路 |
| US8212540B2 (en) | 2007-09-14 | 2012-07-03 | Panasonic Corporation | Voltage generating circuit |
| JP2009146088A (ja) * | 2007-12-13 | 2009-07-02 | Hitachi Displays Ltd | 静電結合型信号送受信回路 |
| WO2010067644A1 (ja) * | 2008-12-09 | 2010-06-17 | 日本電信電話株式会社 | 電圧発生器、制御回路、ベクトル合成型移相器および光トランシーバ |
| JP5260680B2 (ja) * | 2008-12-09 | 2013-08-14 | 日本電信電話株式会社 | 電圧発生器、制御回路、ベクトル合成型移相器および光トランシーバ |
| US8687973B2 (en) | 2008-12-09 | 2014-04-01 | Nippon Telegraph And Telephone Corporation | Voltage generator, control circuit, vector sum phase shifter, and optical transceiver |
| WO2012123995A1 (ja) * | 2011-03-15 | 2012-09-20 | パナソニック株式会社 | 階調電圧発生回路及び表示装置 |
| WO2012123996A1 (ja) * | 2011-03-15 | 2012-09-20 | パナソニック株式会社 | 階調電圧発生回路及び表示装置 |
| JP2018124550A (ja) * | 2017-02-03 | 2018-08-09 | 株式会社半導体エネルギー研究所 | 半導体装置、表示パネル、表示装置、入出力装置、情報処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US7907136B2 (en) | 2011-03-15 |
| US20060267639A1 (en) | 2006-11-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070323 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20070629 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20090615 |