JP2006310690A - 熱処理装置 - Google Patents
熱処理装置 Download PDFInfo
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- JP2006310690A JP2006310690A JP2005134148A JP2005134148A JP2006310690A JP 2006310690 A JP2006310690 A JP 2006310690A JP 2005134148 A JP2005134148 A JP 2005134148A JP 2005134148 A JP2005134148 A JP 2005134148A JP 2006310690 A JP2006310690 A JP 2006310690A
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 89
- 230000003287 optical effect Effects 0.000 claims abstract description 82
- 230000002093 peripheral effect Effects 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 101
- 238000009826 distribution Methods 0.000 abstract description 23
- 235000012431 wafers Nutrition 0.000 description 99
- 239000007789 gas Substances 0.000 description 20
- 229910052724 xenon Inorganic materials 0.000 description 16
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 16
- 239000012535 impurity Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 238000001994 activation Methods 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 229910052736 halogen Inorganic materials 0.000 description 5
- 150000002367 halogens Chemical class 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000003584 silencer Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Recrystallisation Techniques (AREA)
- Furnace Details (AREA)
Abstract
【解決手段】フラッシュランプ69から出射された閃光はクランプリング90の開口部91によって規定される光学窓を介して半導体ウェハーWに照射される。クランプリング90の開口部91は楕円形であるため、クランプリング90によって規定される光学窓の平面形状も楕円形状となる。光学窓の平面形状を円形にしてフラッシュランプ69から閃光照射を行ったときに相対的に温度が低くなる半導体ウェハーWの周縁部を臨む側の光学窓端縁部が楕円形の短径方向端部となるようにクランプリング90をチャンバー6に取り付ける。この光学窓を介して閃光照射を行い、温度の低くなる周縁部の温度を上昇させてフラッシュ加熱時における半導体ウェハーW上の温度分布の面内均一性を向上している。
【選択図】図6
Description
4 保持部昇降機構
5 光照射部
6 チャンバー
7 保持部
61 透光板
65 熱処理空間
69 フラッシュランプ
71 ホットプレート
72 サセプタ
90 クランプリング
91 開口部
W 半導体ウェハー
Claims (6)
- 基板に対して閃光を照射することによって該基板を加熱する熱処理装置であって、
複数のフラッシュランプを平面状に配列した光源と、
前記光源の下方に設けられ、基板を収容するチャンバーと、
前記チャンバー内にて基板を保持する保持手段と、
前記チャンバーの上部に設けられ、前記光源から出射された閃光を前記チャンバー内に導く透光板と、
前記透光板のうちの実際に光が透過する領域である光学窓を規定する光学窓形成部材と、
を備え、
前記光学窓形成部材によって規定される前記光学窓の平面形状は、前記光学窓の中心から端縁部の一部までの距離が他の部分までの距離よりも短いことを特徴とする熱処理装置。 - 請求項1記載の熱処理装置において、
前記光学窓の端縁部の前記一部は、前記光学窓の平面形状を円形にして前記光源から閃光照射を行ったときに相対的に温度の低い基板周縁部を臨む側の端縁部であることを特徴とする熱処理装置。 - 請求項1または請求項2に記載の熱処理装置において、
前記光学窓形成部材によって規定される前記光学窓の平面形状が楕円形であることを特徴とする熱処理装置。 - 請求項3記載の熱処理装置において、
前記光学窓の短径方向端縁部は平面視で前記チャンバーの内壁面よりも内側かつ前記保持手段に保持された基板の周端部よりも外側に位置することを特徴とする熱処理装置。 - 請求項1または請求項2に記載の熱処理装置において、
前記光学窓形成部材によって規定される前記光学窓の平面形状が長穴形状であることを特徴とする熱処理装置。 - 請求項1から請求項5のいずれかに記載の熱処理装置において、
前記光学窓形成部材は、前記透光板を前記チャンバーに押さえつけるとともに、前記透光板の周縁部上面を覆うことによって前記光学窓を形成する枠体であることを特徴とする熱処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005134148A JP4866020B2 (ja) | 2005-05-02 | 2005-05-02 | 熱処理装置 |
TW095113954A TWI307925B (en) | 2005-05-02 | 2006-04-19 | Heat treatment apparatus of light emission type |
CNB2006100799700A CN100394544C (zh) | 2005-05-02 | 2006-04-29 | 发光型热处理设备 |
US11/416,018 US20060291832A1 (en) | 2005-05-02 | 2006-05-02 | Heat treatment apparatus of light emission type |
KR1020060039619A KR100802697B1 (ko) | 2005-05-02 | 2006-05-02 | 광방출형 열처리장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005134148A JP4866020B2 (ja) | 2005-05-02 | 2005-05-02 | 熱処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006310690A true JP2006310690A (ja) | 2006-11-09 |
JP4866020B2 JP4866020B2 (ja) | 2012-02-01 |
Family
ID=37297785
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005134148A Active JP4866020B2 (ja) | 2005-05-02 | 2005-05-02 | 熱処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060291832A1 (ja) |
JP (1) | JP4866020B2 (ja) |
KR (1) | KR100802697B1 (ja) |
CN (1) | CN100394544C (ja) |
TW (1) | TWI307925B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1959486A2 (en) | 2007-02-16 | 2008-08-20 | Sumco Corporation | Silicon wafer and its manufacturing method |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080090309A1 (en) * | 2003-10-27 | 2008-04-17 | Ranish Joseph M | Controlled annealing method |
DE102008034260B4 (de) * | 2008-07-16 | 2014-06-26 | Siltronic Ag | Verfahren zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels CVD in einer Kammer und Kammer zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels CVD |
CN101773917B (zh) * | 2010-03-05 | 2015-01-07 | 上海集成电路研发中心有限公司 | 硅片清洗装置及方法 |
KR101829676B1 (ko) * | 2011-12-29 | 2018-02-20 | 삼성전자주식회사 | 웨이퍼 열 처리 방법 |
KR101368818B1 (ko) | 2012-05-03 | 2014-03-04 | 에이피시스템 주식회사 | 기판 처리 장치 |
CN102808175B (zh) * | 2012-07-24 | 2014-04-02 | 北京鼎臣超导科技有限公司 | 一种新型大面积双面超导薄膜基片夹具及其应用 |
US9786529B2 (en) * | 2013-03-11 | 2017-10-10 | Applied Materials, Inc. | Pyrometry filter for thermal process chamber |
KR102255195B1 (ko) * | 2013-04-16 | 2021-05-25 | 삼성디스플레이 주식회사 | 필름 건조 장치 및 필름 건조 방법 |
CN104269368A (zh) * | 2014-08-29 | 2015-01-07 | 沈阳拓荆科技有限公司 | 一种利用前端模块为晶圆加热的装置及方法 |
CN107062848A (zh) * | 2017-06-08 | 2017-08-18 | 福建省将乐县长兴电子有限公司 | 一种用于晶振生产的烘干装置 |
JP7191504B2 (ja) * | 2017-07-14 | 2022-12-19 | 株式会社Screenホールディングス | 熱処理装置 |
JP2019021828A (ja) * | 2017-07-20 | 2019-02-07 | 株式会社Screenホールディングス | 熱処理装置 |
CN108447804A (zh) * | 2018-03-28 | 2018-08-24 | 天津大学 | 一种闪光灯退火炉 |
JP7319894B2 (ja) | 2019-11-18 | 2023-08-02 | 株式会社Screenホールディングス | 熱処理装置 |
CN113517192B (zh) * | 2021-07-14 | 2023-10-20 | 长江存储科技有限责任公司 | 晶圆处理方法和制造半导体器件的方法 |
CN115347125A (zh) * | 2022-10-18 | 2022-11-15 | 中国华能集团清洁能源技术研究院有限公司 | 一种钙钛矿材料快速原位退火的方法及退火装置 |
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-
2005
- 2005-05-02 JP JP2005134148A patent/JP4866020B2/ja active Active
-
2006
- 2006-04-19 TW TW095113954A patent/TWI307925B/zh active
- 2006-04-29 CN CNB2006100799700A patent/CN100394544C/zh active Active
- 2006-05-02 US US11/416,018 patent/US20060291832A1/en not_active Abandoned
- 2006-05-02 KR KR1020060039619A patent/KR100802697B1/ko active IP Right Grant
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JPS632318A (ja) * | 1986-06-23 | 1988-01-07 | Hitachi Ltd | ランプ加熱装置 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1959486A2 (en) | 2007-02-16 | 2008-08-20 | Sumco Corporation | Silicon wafer and its manufacturing method |
US7936051B2 (en) | 2007-02-16 | 2011-05-03 | Sumco Corporation | Silicon wafer and its manufacturing method |
TWI382469B (zh) * | 2007-02-16 | 2013-01-11 | Sumco Corp | 矽晶圓及其製造方法 |
EP2587527A1 (en) | 2007-02-16 | 2013-05-01 | Sumco Corporation | Silicon wafer and its manufacturing method |
Also Published As
Publication number | Publication date |
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TWI307925B (en) | 2009-03-21 |
CN1858897A (zh) | 2006-11-08 |
KR20060114657A (ko) | 2006-11-07 |
JP4866020B2 (ja) | 2012-02-01 |
TW200701369A (en) | 2007-01-01 |
CN100394544C (zh) | 2008-06-11 |
US20060291832A1 (en) | 2006-12-28 |
KR100802697B1 (ko) | 2008-02-12 |
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