JP2006249426A - 低応力導電性接着材 - Google Patents

低応力導電性接着材 Download PDF

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Publication number
JP2006249426A
JP2006249426A JP2006057140A JP2006057140A JP2006249426A JP 2006249426 A JP2006249426 A JP 2006249426A JP 2006057140 A JP2006057140 A JP 2006057140A JP 2006057140 A JP2006057140 A JP 2006057140A JP 2006249426 A JP2006249426 A JP 2006249426A
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composition
conductive
functional acrylic
silver
present
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JP2006057140A
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JP4875386B2 (ja
Inventor
Chih-Ming Cheng
チー−ミン・チェン
Andrew Collins
アンドリュー・コリンス
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National Starch and Chemical Investment Holding Corp
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National Starch and Chemical Investment Holding Corp
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    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01C—PLANTING; SOWING; FERTILISING
    • A01C1/00—Apparatus, or methods of use thereof, for testing or treating seed, roots, or the like, prior to sowing or planting
    • A01C1/02—Germinating apparatus; Determining germination capacity of seeds or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G31/00—Soilless cultivation, e.g. hydroponics
    • A01G31/02—Special apparatus therefor
    • A01G31/06—Hydroponic culture on racks or in stacked containers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
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    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
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    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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Abstract

【課題】 従来のフレキシブル導電性フィルム接着材よりも高い接着強度を与え、現存する高接着強度導電性フィルムよりも被接着部品間の低い応力を与える導電性フィルム又はペースト接着材を提供すること。
【解決手段】 ａ）１以上の官能性アクリルコポリマー又はターポリマー；ｂ）エポキシ樹脂；及びｃ）導電性フィラーを含む低応力導電性フィルム又はペースト接着材。接着促進剤、導電性向上剤等の追加の成分も利用できる。
【選択図】 なし

Description

発明の詳細な説明
発明の分野
本発明は、電気的に安定な相互接続を与えるために超小型電子デバイス又は半導体パッケージにおいて導電性材料として使用されるのに適した組成物に関する。
発明の背景
超小型電子デバイス及び半導体パッケージの作製及び組立において、導電性組成物が様々な目的に使用されている。例えば、導電性接着材は、集積回路チップを基板に接着するために（ダイ取り付け用接着材）又は回路アセンブリを印刷配線基板に接着するために（表面実装導電性接着材）使用される。
基板に部品をソルダー処理するために電子産業で使用される先端技術においては、６３重量％の錫と３７重量％の鉛を含む所謂共晶ソルダーである金属ソルダー合金が使用される。それは回路基板にペースト又はソルダープリフォームとして施され、その溶融温度（183℃）以上に加熱され、ソルダーペーストを溶融させ、接合部を形成する。あるいは、基板を溶融ソルダーの波の上を通過させ、電子部品を回路基板に接着するための接合部を形成する。別の場合、フラックス材料を使用して、金属表面が表面酸化されることを排除し、溶融ソルダーが表面に強固に結合することを可能にし、耐衝撃性に優れた信頼できるソルダー接合部を形成する。ソルダー技術は数十年にわたって存在してきたが、それは一方でいくつかの問題点を有する。合金中の鉛は環境に優しいとは言えない。電子産業用ソルダーにおける鉛の使用を課税し、制限し、あるいは禁止するために、多くの環境に関する規制が提案されている。第二に、高いプロセス温度によってより高価な熱安定性基板を使用することが必要であるが、この高いプロセス温度は電子産業においてより一般的に使用されるようになっているフレキシブル基板に適合しない。別の問題点は、リフロープロセス後にフラックス材料からの残さを洗浄するための余分な工程が必要であるが、これが高価で効率の悪いプロセスとなっている。
導電性接着材は、無鉛、低プロセス温度、及びソルダーフラックス及びそれに伴うフラックスの洗浄工程を必要としない簡単な組立プロセスに起因して従来のソルダーアセンブリを超えるいくつかの利点を与える。導電性接着材の望ましい性質の中に、室温での長い可使時間、比較的低い硬化温度及び比較的短い硬化時間、スクリーン印刷に良好なレオロジー、硬化後に電流を流すために十分な導電性、硬化後に基板に対する許容できる接着力、高温及び高湿度で長時間にわたり安定な電気抵抗、並びに良好な耐衝撃性がある。導電性接着材は様々なマイクロ波用途に意図される大面積アセンブリに特に有用である。その用途では、ＦＲ４又はセラミック回路基板をアルミニウム又は銅のコアを有する金属基板に接着することが必要である。そのような用途において、導電性接着材は電気的インテグリティ、ボンド−ラインコンシステンシー及び改善された熱散逸を提供し、それは規制上の要件に対応し、損失を最小にし、高周波デジタル信号の歪みを最小にし、グランドプレーンに対する低インピーダンスを維持する。
二つのタイプの導電性接着材、フィルム及びペーストが一般に利用される。フィルム接着材はソルダーに対する低温度プロセスの代替物として利用され、電気回路基板及び金属支持体の間に堅固なグランドパスを形成する。フィルム導電性接着材はボンドライン厚さにおけるコンシステンシー、低流動性、複雑なダイ切断部分としての利用可能性に起因して大面積アセンブリに好適である。フィルム接着材は、所望のＰＣＢの寸法に予備切断され、Ｂ段階処理（B-stage）条件においてエンドアセンブラーによって受け取られる。キャリア基材（通常MYLAR）がフィルムから除去され、そのフィルムが接着のために基板の間に置かれ、そして、高温高圧条件下でパッケージと共に接着される。さらに、フィルム接着材はペースト接着材よりも非常に高い粘度を有するので、そのフィルムを長時間室温で保管するときも、フィラーのセッティングが問題にならない。
フィルム接着材を取り巻く一つの問題はフレキシビリティである。高い強度を有するフィルム接着材は一般に制限されたフレキシビリティを有する高モジュラス接着材である。そのような高モジュラス及び高架橋密度を有するフィルムは、硬化後に基板と金属ヒートシンクとの間の熱膨張係数の非常に大きな違いに起因して高応力条件を生成する。高応力によって最終アセンブリにおいて高度のそりがもたらされる。低応力を与えるフィルム接着材は典型的には低モジュラスであり、接着強度も低い。結果として、市販のフレキシブルフィルムは非フレキシブルフィルムよりも接着強度が低い。
ペースト導電性接着材もまた、特に基板上に接着材がスクリーン印刷される場合に、大面積で接着されるために使用できる。スクリーン印刷は高体積の製造を可能にし、廃棄物を制限する。ペースト導電性接着材もまたＢ段階処理可能であり、その結果、それらはフィルムと同様に予め部品に施すことができ、保管し、そして最終的な接着のために加熱することができる。ペースト接着材のレオロジーは回路基板上に接着材を正確に配置することを保証するために監視する必要がある。同様に、ペーストのレオロジーはＢ段階処理又は硬化プロセスの際のブリードアウト又はスランピング（slumping）を回避するために監視する必要がある。
それゆえ、半導体パッケージング操作において使用するための電気的に安定したアセンブリを形成するために、低応力及び高接着力を与える導電性のフィルム及びペースト接着材を与えることが有利である。有利には、その接着材は一般のフレキシブルフィルム接着材よりも優れた接着力と、一般の高強度フィルム接着材と比較してより優れた応力低減との組み合わせを有する。
発明の概要
本発明は低応力、等方性、導電性のフィルム又はペースト接着材に関し、その接着材はａ）１以上の官能性アクリルコポリマー又はターポリマー；ｂ）エポキシ樹脂；及びｃ）導電性フィラーを含む。接着促進剤、硬化剤、導電性向上剤等の追加の成分も利用できる。本発明の導電性フィルム接着材は従来のフレキシブル導電性フィルム接着材よりも高い接着強度を与え、現存する高接着強度導電性フィルムよりも被接着部品間の低い応力を与える。
発明の詳細な記述
本発明の導電性接着材は、ａ）１以上の官能性アクリルコポリマー又はターポリマー；ｂ）エポキシ樹脂；及びｃ）導電性フィラーを含む。好ましい態様において、１以上の接着促進剤、硬化剤及び導電率添加剤も含むことができる。ここで、官能性アクリルコポリマーに関して言及される場合、官能性アクリルコポリマーはターポリマーを含んでもよいと理解される。
本発明の官能性アクリルコポリマーはコーティング溶媒に溶解でき、低応力、高強度フィルム形成性又はペースト状接着材を可能にする。好適なアクリルコポリマーは飽和ポリマーであり、それゆえカルボキシル末端ブタジエンニトリルゴムなどの典型的なゴム強化樹脂よりも酸化、老化及び劣化に対して耐性がある。コポリマーの組成物は、好ましくはブチルアクリレート−エチルアクリロニトリル又はブチルアクリレート−コ−エチルアクリロニトリル又はエチルアクリレート−アクリロニトリルであり、高分子量の重合を与える。コポリマーは、好ましくは、ヒドロキシル、カルボン酸、イソシアネート又はエポキシ官能基を有し、溶媒及びエポキシ樹脂との適合性を向上させる。コポリマーの分子量は高く、好ましくは、約２００，０００〜約９００，０００の範囲内である。コポリマーのガラス転移温度（Ｔｇ）は室温に比べて低く、好ましくは約３０℃〜約−４０℃の範囲内である。様々な官能性アクリルコポリマーが利用できる一方、好ましい官能性アクリルコポリマーはTEISAN RESIN SG80H（Nagase ChemteX Corporation（日本国、大阪）から商業的に入手可能）である。
本発明で使用する好適なエポキシ樹脂としては、例えば、ビスフェノールＡ及びビスフェノールＦの単官能性及び多官能性グリシジルエーテル類、脂肪族及び芳香族エポキシ類、飽和及び不飽和エポキシ類、脂環族エポキシ樹脂、これらの組合せ等が挙げられる。最も好ましいエポキシ樹脂はビスフェノールＡタイプ樹脂である。これら樹脂は一般に１モルのビスフェノールＡ樹脂と２モルのエピクロロヒドリンとの反応によって調製される。エポキシ樹脂のさらに好ましいタイプはエポキシノボラック樹脂である。エポキシノボラック樹脂は一般にフェノール樹脂とエピクロロヒドリンとの反応によって調製される。ジシクロペンタジエン−フェノールエポキシ樹脂、ナフタレン樹脂、エポキシ官能性ブタジエンアクリロニトリルコポリマー、エポキシ官能性ポリジメチルシロキサン、エポキシ官能性コポリマー及びそれらの混合物は、採用してもよいエポキシ樹脂の追加のタイプである。商業的に入手できるビスフェノールＦタイプ樹脂はCVC Specialty Chemicals, Maple Shade, New Jerseyからの8230E、Resolution Performance Products Ltd.からのRSL1739である。ビスフェノールＡタイプのエポキシ樹脂はResolution Performance Products Ltd.からEPON 828として商業的に入手できる。ビスフェノールＡ及びビスフェノールＦのブレンド物はNippon Chemical CompanyからZX-1059として入手できる。
導電性材料は、導電性フィラーを含んでもよい。導電性フィラーとしては、例えば、銀、銅、金、パラジウム、白金、カーボンブラック、カーボンファイバー、グラファイト、アルミニウム、インジウム錫酸化物、銀コートされた銅、銀コートされたアルミニウム、ビスマス、錫、ビスマス−錫合金、金属コートされたガラス球、銀コートされたファイバー、銀コートされた球、アンチモンドープされた錫酸化物、カーボンナノチューブ、導電性ナノフィラー、導電性酸化物、それらの混合物などが挙げられる。
場合によって、適切な流動添加剤、接着促進剤、導電率添加剤、硬化剤及びレオロジー改質剤を所望により加えることができる。場合によって採用される流動添加剤としては、例えば、シリコンポリマー、エチルアクリレート／２−エチルヘキシルアクリレートコポリマー、酸のアルキロールアンモニウム塩、ケトキシムのリン酸エステル、これらの混合物などが挙げられる。好適な接着促進剤としては、例えば、シランの様々な形のもの等が挙げられる。好適なレオロジー改質剤としては、例えば、熱可塑性樹脂、好ましくはポリビニルアセタール等が挙げられる。好適な導電率添加剤としては、例えば、無水物、グルタール酸、クエン酸、リン酸、他の酸触媒などが挙げられる。好適な硬化剤としては、例えば、ルイス酸、無水物、アミン類、イミダゾール類、ジシアンジアミド類、これらの混合物などが挙げられるが、これらに限定されない。
本発明のこの態様の等方性導電性接着材組成物は、合計１００重量％に対して、約４〜１９重量％までの官能性アクリルコポリマー、約６０〜９５重量％の導電性フィラー、約１〜１０重量％のエポキシ樹脂、約０〜１０重量％の硬化剤、約０〜５重量％の導電率添加剤、及び約０〜５重量％の接着促進剤、流動添加剤、レオロジー改質剤又は他の添加剤を含む。好ましくは、官能性アクリルコポリマーは約１２〜１８重量％の範囲内で存在し、導電性フィラーは約７０〜９０重量％の範囲内で存在し、エポキシ樹脂は約２〜８重量％の範囲内で存在し、硬化剤は約０．１〜３重量％の範囲内で存在し、導電率添加剤は約０．０１〜１重量％の範囲内で存在し、その他の添加剤は約０〜約５重量％の範囲内で存在する。
本発明はさらに以下の実施例により説明されることができる。
実施例
本発明の官能性アクリルコポリマーは表１中の成分で配合処方された。
Figure 2006249426
１ SG80H DR（Nagase Chemtexから)
２ RSL-1462 DGEGA epoxy（Resolution Performance Productsから商業的に入手可能）
３ Dicyanex 1400B（Air Productsから）
４ 導電性促進剤及び銀充填剤は専売材料（proprietary materials）である。

表１の配合物Ａの性能は商業的に入手できる高接着強度エポキシ樹脂及び低応力エポキシ樹脂の性能と共に試験した。試験された高接着強度エポキシ樹脂（比較例Ａ）はCF3350（Emerson & Cumingから商業的に入手可能）であり、試験された低応力エポキシ樹脂（比較例Ｂ）は845OWL（AI Technologiesから商業的に入手可能）であった。これら試験の結果を表２に示す。
ダイせん断接着力は、Dage instrumentを使用して部品を別個に押して測定した。そりは、マイクロメータによって端から中心までの湾曲の差として測定した（なお、ＬＴＣＣは低温焼成セラミック（low temperature cofired ceramic）を表す。）。Sonoscan microscopeから発生したアコースティックイメージでボンド−ラインインテグリティを表示した。
Figure 2006249426
表２に示されるように、官能性アクリルコポリマーを含む試料は、比較例Ｂと比べて優れた強度及び優れたボンドラインインテグリティを示した。アセンブリをリフロープロセス温度に曝露した後の接着強度の保持性が表２に示されている。強度の保持性は、これら接着材をアンポピュレーテッド（un-populated）な基板を接着するために利用する場合に必要である。部品を有する回路基板のポピュレーションはソルダープロセスで行われ、従って接着強度の保持性はボンド−ラインインテグリティにとってクリティカルである。比較例Ｂはリフロー温度に曝露する際に良好な性能を示さなかった。このことから、曝露後に接着強度の低下及びボンドラインインテグリティの変化があったことが明らかである。試験配合物はまた比較例Ａと比べて曲率（応力：stress）の有意な低下を示した。この応力の低下は、リフロープロセス曝露後の接着インテグリティの損失無しで達成された。
当業者に明らかであるように、本発明の多くの変更及び変形をその精神及び範囲から逸脱することなく行うことができる。本明細書に記載された特定の態様は一例として提供されたに過ぎず、本発明は添付の特許請求の範囲の記載並びにそのような特許請求の範囲に付与される均等物の全範囲によってのみ制限される。

Claims (16)

  1. ａ）１以上の官能性アクリルコポリマー又はターポリマー；
    ｂ）エポキシ樹脂；及び
    ｃ）導電性フィラー；
    を含む超小型電子デバイス用組成物。
  2. （ａ）１以上の官能性アクリルコポリマー又はターポリマーが約４〜約１９重量％の量で存在し；
    （ｂ）エポキシ樹脂が約１〜約８重量％の量で存在し；
    （ｃ）導電性フィラーが約６０〜約９５重量％の量で存在する；
    請求項１の組成物。
  3. １以上の導電率添加剤をさらに含む請求項１の組成物。
  4. １以上の導電率添加剤が約０．０１〜約１重量％の量で存在する、請求項３の組成物。
  5. １以上の硬化剤をさらに含む請求項１の組成物。
  6. １以上の硬化剤が約０．１〜約３重量％の量で存在する、請求項５の組成物。
  7. 官能性アクリルコポリマー又はターポリマーがヒドロキシル、カルボン酸、イソシアネート又はエポキシ官能基を有する、請求項１の組成物。
  8. 官能性アクリルコポリマー又はターポリマーが約３０℃〜約−４０℃の範囲内のＴｇを有する、請求項１の組成物。
  9. 官能性アクリルコポリマー又はターポリマーが約２００，０００〜約９００，０００の範囲内の分子量を有する、請求項１の組成物。
  10. 導電性フィラーが銀、銅、金、パラジウム、白金、カーボンブラック、カーボンファイバー、グラファイト、アルミニウム、インジウム錫酸化物、銀コートされた銅、銀コートされたアルミニウム、ビスマス、錫、ビスマス−錫合金、金属コートされたガラス球、銀コートされたファイバー、銀コートされた球、アンチモンドープされた錫酸化物、カーボンナノチューブ、導電性ナノフィラー、導電性酸化物、及びそれらの混合物からなる群から選ばれる、請求項１の組成物。
  11. エポキシ樹脂がビスフェノールＡ及びビスフェノールＦの単官能性及び多官能性グリシジルエーテル類、脂肪族及び芳香族エポキシ類、飽和及び不飽和エポキシ類、脂環族エポキシ樹脂、エポキシ官能性ポリマー、コポリマー、ターポリマー又はこれらの混合物の群から選ばれる、請求項１の組成物。
  12. 流動添加剤、接着促進剤及びレオロジー改質剤からなる群の１以上をさらに含む請求項１の組成物。
  13. 組成物が低応力フィルム導電性接着材である、請求項１の組成物。
  14. 組成物が導電性の接着性ペーストであり、低応力フィルム導電性接着材にＢ段階処理できる、請求項１の組成物。
  15. 請求項１の組成物を使用して電子部品を接着する方法。
  16. 請求項１の組成物を使用して電子部品を接着するためのフレキシブルフィルム又はペーストを提供する方法。
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010163587A (ja) * 2008-03-04 2010-07-29 Lintec Corp 粘着剤組成物及び粘着シート
JP2010163586A (ja) * 2008-03-04 2010-07-29 Lintec Corp 粘着剤組成物及び粘着シート
JP2012214586A (ja) * 2011-03-31 2012-11-08 Lintec Corp 粘着剤組成物及び粘着シート
KR101260708B1 (ko) 2010-02-01 2013-05-10 이스켐주식회사 무용제형 전도성 도료수지
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KR20170062475A (ko) 2014-10-01 2017-06-07 나믹스 가부시끼가이샤 수지 조성물
JP2018524415A (ja) * 2015-05-08 2018-08-30 ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング 焼結可能フィルムおよびペーストおよびその使用方法

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008004287A1 (fr) * 2006-07-05 2008-01-10 Ablestik (Japan) Co., Ltd. Adhésif conducteur
CN101275060B (zh) * 2007-03-30 2012-06-20 清华大学 导电胶带及其制造方法
CN101323759B (zh) * 2007-06-15 2014-10-08 清华大学 导电胶带及其制造方法
US8609471B2 (en) * 2008-02-29 2013-12-17 Freescale Semiconductor, Inc. Packaging an integrated circuit die using compression molding
KR101410447B1 (ko) * 2008-03-06 2014-06-20 김종현 전도성이 우수한 전자부품 실장용 전도성 페이스트 및 그제조방법
DE102008014690A1 (de) * 2008-03-18 2009-09-24 Conti Temic Microelectronic Gmbh Verfahren zur Herstellung von Schaltungsträgern
KR100974092B1 (ko) * 2008-05-30 2010-08-04 삼성전기주식회사 탄소나노튜브를 포함하는 도전성 페이스트 및 이를 이용한인쇄회로기판
JPWO2010131655A1 (ja) * 2009-05-13 2012-11-01 日立化成工業株式会社 接着シート
KR101157515B1 (ko) * 2009-06-19 2012-06-20 중앙대학교 산학협력단 도전성 접착제 및 이를 이용한 단자간 접속방법
KR101138799B1 (ko) * 2009-08-20 2012-04-24 제일모직주식회사 이방 도전성 필름용 조성물
KR101225497B1 (ko) * 2009-11-05 2013-01-23 (주)덕산테코피아 도전성 접착제와 그 제조 방법 및 이를 포함하는 전자 장치
CN101831264B (zh) * 2010-04-26 2013-02-13 常州合润新材料科技有限公司 一种填充碳纳米管各向同性高性能导热胶粘剂
CN102971354A (zh) 2010-05-05 2013-03-13 泰科电子服务有限责任公司 用于电子部件的灌封
CA2800727C (en) 2010-05-26 2016-01-12 Turbosonic Inc. Conductive adhesive
US20110315916A1 (en) 2010-06-29 2011-12-29 Dow Global Technologies Inc. Curable composition
WO2012059974A1 (ja) * 2010-11-01 2012-05-10 Ｄｏｗａエレクトロニクス株式会社 低温焼結性導電性ペーストおよびそれを用いた導電膜と導電膜の形成方法
CN102153976B (zh) * 2011-03-01 2013-05-08 华南理工大学 一种石墨烯/纳米银环氧导电胶的制备方法
GB201116240D0 (en) * 2011-09-20 2011-11-02 Henkel Ag & Co Kgaa Electrically conductive adhesives comprising silver-coated particles
CN102504741A (zh) * 2011-10-26 2012-06-20 中国电器科学研究院有限公司 一种碳纳米管填充型大功率led用高导热导电固晶胶粘剂
US9200184B2 (en) * 2012-05-17 2015-12-01 Henkel IP & Holding GmbH Chain extended epoxy to improve adhesion of conductive die attach film
US8895865B2 (en) 2012-09-07 2014-11-25 Conor P. Lenahan Conductive connections allowing XYZ translation
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TW202219214A (zh) 2020-08-27 2022-05-16 德商漢高股份有限及兩合公司 導電性單組分型(1k)環氧樹脂調配物

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03277650A (ja) * 1990-03-28 1991-12-09 Nissan Motor Co Ltd 接着性にすぐれた導電性樹脂組成物
JP2000517092A (ja) * 1996-08-16 2000-12-19 フー ピー． クライグ 印刷可能組成物、並びにその印刷回路板の製造に用いる誘電表面への適用
JP2003055583A (ja) * 1998-12-08 2003-02-26 Taiyo Ink Mfg Ltd 光硬化型異方性導電組成物及びそれを用いて形成した異方性導電パターン
JP2004168933A (ja) * 2002-11-21 2004-06-17 Hitachi Chem Co Ltd 樹脂ペースト組成物及びこれを用いた半導体装置。

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US499136A (en) 1893-06-06 miller
US4695508A (en) 1985-09-06 1987-09-22 The Yokohama Rubber Co., Ltd. Adhesive composition
JP2877309B2 (ja) 1988-01-06 1999-03-31 株式会社東芝 ゴム変性フェノール樹脂の製造方法
US4999136A (en) 1988-08-23 1991-03-12 Westinghouse Electric Corp. Ultraviolet curable conductive resin
US5043102A (en) * 1989-11-29 1991-08-27 Advanced Products, Inc. Conductive adhesive useful for bonding a semiconductor die to a conductive support base
JPH04332404A (ja) 1991-05-07 1992-11-19 Nec Corp 異方性導電材料及びこれを用いた集積回路素子の接続方法
US5250228A (en) 1991-11-06 1993-10-05 Raychem Corporation Conductive polymer composition
US5620795A (en) * 1993-11-10 1997-04-15 Minnesota Mining And Manufacturing Company Adhesives containing electrically conductive agents
US5645764A (en) * 1995-01-19 1997-07-08 International Business Machines Corporation Electrically conductive pressure sensitive adhesives
US5863988A (en) 1995-12-25 1999-01-26 Tomoegawa Paper Co., Ltd. Liquid adhesive for electronic parts and adhesive tape
EP0892027B1 (en) 1997-07-17 2003-05-21 Raytheon Company Drop-resistant conductive epoxy adhesive
US6246123B1 (en) 1998-05-04 2001-06-12 Motorola, Inc. Transparent compound and applications for its use
AU4688699A (en) 1998-06-22 2000-01-10 Loctite Corporation Thermosetting resin compositions useful as underfill sealants
US6344155B1 (en) 1999-04-06 2002-02-05 Tomoegawa Paper Co., Ltd. Electrically conductive adhesive composition, electrically conductive adhesive sheet and use thereof
DE602004002096T2 (de) 2003-03-10 2007-03-15 Dainippon Ink And Chemicals, Inc. Leitfähige harzzusammensetzung, herstellungsverfahren dafür und brennstoffzellenseparatoren
JP2007515785A (ja) 2003-11-21 2007-06-14 ロード・コーポレーション 二段階のウェーハ塗布アンダフィル

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03277650A (ja) * 1990-03-28 1991-12-09 Nissan Motor Co Ltd 接着性にすぐれた導電性樹脂組成物
JP2000517092A (ja) * 1996-08-16 2000-12-19 フー ピー． クライグ 印刷可能組成物、並びにその印刷回路板の製造に用いる誘電表面への適用
JP2003055583A (ja) * 1998-12-08 2003-02-26 Taiyo Ink Mfg Ltd 光硬化型異方性導電組成物及びそれを用いて形成した異方性導電パターン
JP2004168933A (ja) * 2002-11-21 2004-06-17 Hitachi Chem Co Ltd 樹脂ペースト組成物及びこれを用いた半導体装置。

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010163587A (ja) * 2008-03-04 2010-07-29 Lintec Corp 粘着剤組成物及び粘着シート
JP2010163586A (ja) * 2008-03-04 2010-07-29 Lintec Corp 粘着剤組成物及び粘着シート
KR101591087B1 (ko) 2008-03-04 2016-02-02 린텍 가부시키가이샤 점착제 조성물 및 점착시트
KR101260708B1 (ko) 2010-02-01 2013-05-10 이스켐주식회사 무용제형 전도성 도료수지
JP2012214586A (ja) * 2011-03-31 2012-11-08 Lintec Corp 粘着剤組成物及び粘着シート
CN104282356A (zh) * 2013-07-03 2015-01-14 肖淑勇 一种低银含量复合导电银浆及其制备方法
KR20170062475A (ko) 2014-10-01 2017-06-07 나믹스 가부시끼가이샤 수지 조성물
JP2018524415A (ja) * 2015-05-08 2018-08-30 ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング 焼結可能フィルムおよびペーストおよびその使用方法
US11745294B2 (en) 2015-05-08 2023-09-05 Henkel Ag & Co., Kgaa Sinterable films and pastes and methods for use thereof

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CN1831073A (zh) 2006-09-13
EP1701361A1 (en) 2006-09-13
ATE465497T1 (de) 2010-05-15
US7326369B2 (en) 2008-02-05
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KR101325083B1 (ko) 2013-11-06
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