CN1831073B - 低应力导电胶粘剂 - Google Patents

低应力导电胶粘剂 Download PDF

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Publication number
CN1831073B
CN1831073B CN2006100583710A CN200610058371A CN1831073B CN 1831073 B CN1831073 B CN 1831073B CN 2006100583710 A CN2006100583710 A CN 2006100583710A CN 200610058371 A CN200610058371 A CN 200610058371A CN 1831073 B CN1831073 B CN 1831073B
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conductive
exists
silver
amount
epoxy resin
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CN1831073A (zh
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郑志民
安德鲁·柯林斯
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Henkel AG and Co KGaA
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Henkel AG and Co KGaA
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    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01C—PLANTING; SOWING; FERTILISING
    • A01C1/00—Apparatus, or methods of use thereof, for testing or treating seed, roots, or the like, prior to sowing or planting
    • A01C1/02—Germinating apparatus; Determining germination capacity of seeds or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G31/00—Soilless cultivation, e.g. hydroponics
    • A01G31/02—Special apparatus therefor
    • A01G31/06—Hydroponic culture on racks or in stacked containers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
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    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
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    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
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Abstract

低应力导电薄膜或膏状胶粘剂，其包括a)一种或多种功能性丙烯酸系共聚物或三元共聚物；b)环氧树脂；和c)导电填料。也可以使用附加的组分，例如粘合促进剂和导电增进剂。导电薄膜或膏状胶粘剂提供比传统柔性导电薄膜胶粘剂更高的粘合强度，而且在粘接元件之间提供比现有高粘合强度导电薄膜更低的应力。

Description

低应力导电胶粘剂
                           发明领域
本发明涉及组合物，其适合用作微电子器件或半导体组件中的导电材料，以提供电稳定互连。
                           发明背景
在半导体组件和微电子器件的制造和组装中，导电组合物被用作很多目的。例如，导电组合物被用于粘接集成电路芯片与衬底(芯片粘合剂(die attach adhesive))或粘接电路组件与印刷线路板(表面安装导电胶粘剂(surface mount conductive adhesive))。
在整个电子工业所使用的用于将元件焊接到衬底上的领先技术使用金属焊接合金，就是所谓的共熔焊锡(Eutectic solder)，其含有按重量计算63％锡和37％铅。它作为膏或钎焊材料被施用于电路板，其被加热到高于其熔化温度(183℃)，以使焊接膏熔化并形成焊接头。选择性地，将板通过熔化波动的焊锡，形成接头，以粘接电子元件与电路板。在任何一种情况下，都要使用焊剂材料(flux material)，以从金属表面除去氧化，并使熔化焊料坚固地与表面结合并形成具有优异抗冲击性的可靠的焊接接头。虽然焊接技术已经存在很多年，然而它具有几个缺点。合金中的铅不环保。众多环境法规已经提出征税、限制或禁止在电子焊接中使用铅。第二，高加工温度需要使用较昂贵的热稳定衬底，不适合在电子工业中变得更加普遍的柔性衬底。另一个缺点就是需要额外的步骤，即在回流工艺(reflow process)之后需要清除来自焊剂材料的残余物，这是一种昂贵且降低效率的过程。
导电粘合剂提供几种优于传统焊接组装的优势，原因在于不存在铅，低加工温度和简化的装配过程，该过程不需要焊剂和随后焊剂(flux)清洗步骤。室温下具有长工作寿命，相对低的固化温度和相对短的固化时间，适于丝网印刷的良好流变学性能，当固化时具有足够的导电性或电导率以传送电流，在固化时对衬底具有可接受的粘合，在高温和高湿度下在长时间段内具有稳定的电阻和优良的抗冲击强度都属于导电粘合剂的期望性能。导电粘合剂对各种微波应用需要的大面积装配特别有用，其需要将FR4或陶瓷电路板粘接到具有铝或铜芯的金属衬底上。在这样的应用中，导电粘合剂提供电集成(electricalintegrity)、粘合层一致性和改进的热扩散(thermal dissipation)，其确保符合法规，最小化损耗，最小化高频数字信号的失真及维持对接地面的低阻抗。
通常使用两种类型的导电粘合剂，膜和膏(paste)。薄膜胶粘剂被用作低温过程替代品，以在电路板和金属支持物之间焊接和建立一致的接地通路(ground path)。优选薄膜导电粘合剂用于大面积装配，原因在于它们在粘合层厚度上的一致性、低流动性能和作为复杂的芯片切割部分的可用性。膜胶粘剂在B阶段状态(B-stage condition)下被终端组装人员接收，其已经被预切割为期望印刷线路板(PCB)的尺寸。从薄膜上去除载体衬底，通常为MYLAR，将薄膜放置在待要被粘接的衬底之间，在高温和高压下，组件被粘接在一起。此外，因为与膏状胶粘剂相比，薄膜胶粘剂具有高得多的粘度，所以当薄膜在室温下被储存延长的时间期间时，填料的沉淀不是问题。
围绕薄膜胶粘剂的一个问题是它们的挠性(flexibility)。具有高强度的薄膜胶粘剂一般为具有有限挠性的高模量胶粘剂。具有高模量和高交联密度的这样的膜产生高应力情况，原因在于固化后板和金属热槽之间的热膨胀系数具有很大差距。高应力的结果是在总装中发生高度扭曲。提供低应力的薄膜胶粘剂在模量上一般是低的，在粘合强度上也是低的。因此，有商业供应的柔性膜较非柔性膜在粘合强度上较低。
膏导电粘合剂也可以被用作将大面积结合在一起，特别是如果胶粘剂被丝网印刷到衬底上。丝网印刷实现了高容量生产，而且限制浪费。膏导电粘合剂也可以是可B阶段的(B-stageable)，这样它们可以按照与膜相似的方式被预施用到元件上，储存，然后加热，实现最后粘合。必须监测膏状粘合剂的流变学，以确保胶粘剂被正确的放置在电路板上。同样，必须监测膏的流变学，以避免在B阶段或固化过程中的渗出或滑移(slumping)。
因此，提供具有低应力和高粘合的导电薄膜和膏状粘合剂以形成可用在半导体组装操作中的电稳定组装将成为优势。有利的是，此胶粘剂将同时具有比普通柔性薄膜胶粘剂高的粘和，及与普通高强度薄膜胶粘剂相比更多的应力减少。
                        发明概述
本发明是低应力各向同性导电薄膜或膏状粘合剂(粘结膜或粘结膏)，其包括a)一种或多种功能性丙烯酸系共聚物(one or morefunctional acrylic copolymers)；b)环氧树脂(epoxy)；和c)导电填料(conductive filler)。也可以利用另外的组分，例如粘合增进剂(adhesionpromoters)，固化剂(curing agent)和导电增强剂(conductivityenhancers)。本发明的导电粘合剂提供比传统柔性导电薄膜胶粘剂更高的粘和强度，以及在被粘结元件之间提供比现有高粘合强度导电膜更低的应力。
                           发明详述
本发明的导电粘合剂包括a)一种或多种功能性丙烯酸系共聚物或三元共聚物；b)环氧树脂；和c)导电填料。在优选的实施方案中，也可以包括一种或多种粘合促进剂，固化剂和导电添加剂。当提到功能性丙烯酸系共聚物时，应当理解功能性丙烯酸也可以包括三元共聚物。
本发明的功能性丙烯酸系共聚物在涂渍溶剂中是可溶的，因此使低应力、高强度膜形成或膏状粘合剂得以实现。优选的丙烯酸系共聚物为饱和聚合物，因此比一般橡胶补强用树脂例如羧端基丁腈橡胶更抗氧化、抗老化及抗变质。共聚物的组合物优选为丙烯酸丁酯-乙基丙烯腈或丙烯酸丁酯-共-乙基丙烯腈或丙烯酸乙酯-丙烯腈，以提供高分子量聚合。共聚物优选具有羟基，羧酸，异氰酸酯或环氧官能度，以改进溶剂与环氧树脂相容性。共聚物的分子量是高的，且优选在大约200,000到大约900,000范围内。共聚物的玻璃化转变温度(Tg)相对于室温要低，优选在大约30℃到大约-40℃范围内。尽管可以使用各种功能性丙烯酸系共聚物，优选的功能性丙烯酸系共聚物为TEISANRESIN SG80H，商业供应自日本的Nagase ChemteX Corporation ofOsaka。
用于本发明的优选环氧树脂包括双酚-A和双酚-F的单官能和多官能缩水甘油醚，脂族和芳族环氧树脂，饱和与不饱和环氧树脂，或脂环系环氧树脂或其组合物。最优选的环氧树脂为双酚A型树脂。一般通过一摩尔的双酚A树脂和两摩尔的表氯醇反应制备这些树脂。进一步优选的环氧树脂类型为环氧-线型酚醛树脂。一般通过酚醛树脂和表氯醇的反应制备环氧-线型酚醛树脂。二聚环戊二烯-酚醛环氧树脂，萘醛树脂，环氧官能丁二烯丙烯腈共聚物，环氧官能聚二甲基硅氧烷，环氧官能共聚物及其混合物是另外可以被使用的环氧树脂类型。商业有供应的双酚-F型树脂来自CVC Specialty Chemicals，MapleShade，New Jersey，其名称为8230E，和来自Resolution PerformanceProducts Ltd.，其名称为RSL1739。双酚-A型环氧树脂商业供应自Resolution Performance Products Ltd.，其名称为EPON828，双酚-A和双酚-F的掺混物供应自Nippon Chemical Company，其名称为ZX-1059。
导电材料可以包含导电填料。例证性导电填料为银，铜，金，钯，铂，炭黑，碳纤维，石墨，铝，铟锡氧化物，镀银铜，镀银铝，铋，锡，铋-锡合金，镀金属玻璃球，镀银纤维，镀银球，掺锑氧化锡(antimony doped tin oxide)，碳纳米管，导电纳米填料，导电氧化物及其混合物。
任选地，可以根据需要加入合适的流动添加剂，粘合促进剂，导电添加剂，固化剂和流变改性剂。任选的流动添加剂包括硅氧烷聚合物，丙烯酸乙酯/2-丙烯酸乙基己酯共聚物，酮肟的酸式磷酸酯的烷醇铵盐(alkylol ammonium salt of acid phosphoric acid esters ofketoxime)或其混合物。合适的粘合促进剂包括各种形式的硅烷。合适的流变改性剂包括热塑性树脂和优选包括聚乙烯醇缩乙醛。合适的导电添加剂包括酐，戊二酸，柠檬酸，磷酸和其它酸催化剂。合适的固化剂包括但不限于路易斯酸，酐，胺，咪唑，双氰胺及其混合物。
对于总重量百分比为100来说，本发明的此实施方案的各向同性导电粘合剂组合物包含可达大约4到19重量百分比的功能性丙烯酸系共聚物；大约60到95重量百分比的导电填料；大约1到10重量百分比的环氧树脂；大约0到10重量百分比的固化剂；大约0到5重量百分比的导电添加剂；和大约0到5重量百分比的粘合促进剂、流动添加剂、流变改性剂或其它添加剂。优选地，功能性丙烯酸系共聚物以大约12到18重量百分比的范围存在，导电填料以大约70到90重量百分比的范围存在，环氧树脂以大约2到8重量百分比的范围存在，固化剂以大约0.1到3重量百分比范围存在，导电添加剂以大约0.01到1重量百分比的范围存在，其它添加剂以大约0到大约5的重量百分比的范围存在。
本发明可以通过下列实施例被进一步描述。
实施例：用表1中的组分制备根据本发明的丙烯酸系共聚物
表1功能性丙烯酸系共聚物组合物A
  组分   量(wt％)
  功能性丙烯酸系共聚物   15.30
  环氧树脂1   3.82
  双氰胺   0.78
  导电促进剂   0.10
  银填料   80.00
1RSL-1462DGEGA环氧树脂，商业供应自Resolution PerformanceProducts。
对表1的组合物A的性能，以及商业供应的高粘合强度环氧树脂和低应力环氧树脂的性能进行试验。所试验的高粘合强度环氧树脂(比较例子A)为CF3350，商业供应自Emerson & Cuming，所试验的低应力环氧树脂(比较例子B)为8450WL，商业供应自AI Technologies。这些试验的结果被示于表2中。
表2.粘合剂组合物性能
  粘合剂   模片剪切粘合(陶瓷与陶瓷)(0.3mm×0.3  扭曲(LTCC与镀金铜)(密耳)   暴露于260℃的回流曲线峰值温度   暴露于260℃的回流工艺后的粘合
  mm)   之后的芯片剪切粘合   层完整性(分层还是粘合良好)
 比较例子A   ＞50   ＞4   ＞50   通过
 组合物A   19   1.5   25   通过
 比较例子B   17   0.5   14   失败
如在表2中所示，与比较实例B相比，含功能性丙烯酸系共聚物的试验样品产生了较高的强度和较好的粘合层完整性(bond lineintegrity)。在该组件暴露回流工艺(reflow process)温度之后，在表2中的粘合强度的保持性是显而易见的。当这些粘合剂可以被用于粘结未组装的基底时，强度的保持是必需的。采用焊接工艺对具有元件的电路板进行组装(population)，因此粘合强度的保持对粘合层完整性是关键的。在暴露到回流温度的过程中，比较实例B表现不佳。显然，暴露之后粘合强度减小，而且粘接缝完整性发生变化。与比较实例A相比，试验组合物在曲率(应力)上也产生了显著的减小。在暴露回流工艺后，此应力的减小在没有损失粘合完整性的情况下被获得。
在不偏离其精神和范围的情况下，可以对本发明进行很多修改和变更，这对本领域普通技术人员将是显而易见的。在此所述的具体实施方案仅仅通过实施例予以提供，而且本发明仅被所附权利要求的条款，连同这样的权利要求被授权的等同物的全部范围所限定。

Claims (6)

1.用在微电子器件中的组合物，包括：
a)功能性丙烯酸系共聚物，其具有在30℃到-40℃范围内的Tg，以4到15.30重量百分比的量存在；
b)环氧树脂，其选自双酚-A和双酚-F的单官能和多官能缩水甘油醚环氧树脂，以1到3.82重量百分比的量存在；和
c)导电填料，其以80到90重量百分比的量存在；
d)固化剂，以0.1到3重量百分比的量存在。
2.权利要求1所述的组合物，进一步包含导电添加剂，其以0.01到1重量百分比的量存在。
3.权利要求1所述的组合物，其中所述功能性丙烯酸系共聚物具有羟基、羧酸、异氰酸酯或环氧官能度。
4.权利要求1所述的组合物，其中所述导电填料选自银、铜、金、钯、铂、炭黑、碳纤维、石墨、铝、铟锡氧化物、镀银铜、镀银铝、铋、锡、铋-锡合金、镀金属玻璃球、镀银纤维、镀银球、掺锑氧化锡、导电纳米填料、导电氧化物及其混合物。
5.权利要求1所述的组合物，其中所述导电填料是碳纳米管。
6.权利要求1所述的组合物，进一步包括流动添加剂、粘合促进剂和流变改性剂的一种或多种。
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Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2042580A4 (en) * 2006-07-05 2009-12-09 Henkel Ablestik Japan Ltd CONDUCTIVE ADHESIVE
CN101275060B (zh) * 2007-03-30 2012-06-20 清华大学 导电胶带及其制造方法
CN101323759B (zh) * 2007-06-15 2014-10-08 清华大学 导电胶带及其制造方法
US8609471B2 (en) * 2008-02-29 2013-12-17 Freescale Semiconductor, Inc. Packaging an integrated circuit die using compression molding
JP5390881B2 (ja) * 2008-03-04 2014-01-15 リンテック株式会社 粘着剤組成物及び粘着シート
JP5339284B2 (ja) 2008-03-04 2013-11-13 リンテック株式会社 粘着剤組成物及び粘着シート
KR101410447B1 (ko) * 2008-03-06 2014-06-20 김종현 전도성이 우수한 전자부품 실장용 전도성 페이스트 및 그제조방법
DE102008014690A1 (de) * 2008-03-18 2009-09-24 Conti Temic Microelectronic Gmbh Verfahren zur Herstellung von Schaltungsträgern
KR100974092B1 (ko) * 2008-05-30 2010-08-04 삼성전기주식회사 탄소나노튜브를 포함하는 도전성 페이스트 및 이를 이용한인쇄회로기판
WO2010131655A1 (ja) * 2009-05-13 2010-11-18 日立化成工業株式会社 接着シート
KR101157515B1 (ko) * 2009-06-19 2012-06-20 중앙대학교 산학협력단 도전성 접착제 및 이를 이용한 단자간 접속방법
KR101138799B1 (ko) * 2009-08-20 2012-04-24 제일모직주식회사 이방 도전성 필름용 조성물
KR101225497B1 (ko) * 2009-11-05 2013-01-23 (주)덕산테코피아 도전성 접착제와 그 제조 방법 및 이를 포함하는 전자 장치
KR101260708B1 (ko) 2010-02-01 2013-05-10 이스켐주식회사 무용제형 전도성 도료수지
CN101831264B (zh) * 2010-04-26 2013-02-13 常州合润新材料科技有限公司 一种填充碳纳米管各向同性高性能导热胶粘剂
US8614266B2 (en) 2010-05-05 2013-12-24 Tyco Electronics Services Gmbh Potting for electronic components
CN103119116B (zh) 2010-05-26 2015-04-29 磁力技术涡轮声波公司 导电粘合剂
US20110315916A1 (en) 2010-06-29 2011-12-29 Dow Global Technologies Inc. Curable composition
JP4832615B1 (ja) * 2010-11-01 2011-12-07 Ｄｏｗａエレクトロニクス株式会社 低温焼結性導電性ペーストおよびそれを用いた導電膜と導電膜の形成方法
CN102153976B (zh) * 2011-03-01 2013-05-08 华南理工大学 一种石墨烯/纳米银环氧导电胶的制备方法
JP5686436B2 (ja) * 2011-03-31 2015-03-18 リンテック株式会社 粘着剤組成物及び粘着シート
GB201116240D0 (en) * 2011-09-20 2011-11-02 Henkel Ag & Co Kgaa Electrically conductive adhesives comprising silver-coated particles
CN102504741A (zh) * 2011-10-26 2012-06-20 中国电器科学研究院有限公司 一种碳纳米管填充型大功率led用高导热导电固晶胶粘剂
US9200184B2 (en) 2012-05-17 2015-12-01 Henkel IP & Holding GmbH Chain extended epoxy to improve adhesion of conductive die attach film
US8895865B2 (en) 2012-09-07 2014-11-25 Conor P. Lenahan Conductive connections allowing XYZ translation
CN104282356A (zh) * 2013-07-03 2015-01-14 肖淑勇 一种低银含量复合导电银浆及其制备方法
KR102006057B1 (ko) * 2013-08-06 2019-07-31 센주긴조쿠고교 가부시키가이샤 도전성 접합제 및 납땜 조인트
TWI651387B (zh) 2013-09-30 2019-02-21 漢高智慧財產控股公司 用於大型晶粒半導體封裝之導電黏晶薄膜及供其製備之組合物
CN103805118B (zh) * 2014-02-21 2015-01-07 厦门大学 一种电子封装用复合导电胶及其制备方法
CN105400460B (zh) * 2014-08-25 2019-04-19 3M中国有限公司 导电胶组合物和胶带及其在太阳能电池组件中的应用
WO2016052664A1 (ja) 2014-10-01 2016-04-07 ナミックス株式会社 樹脂組成物
JP6396189B2 (ja) * 2014-11-27 2018-09-26 日東電工株式会社 導電性フィルム状接着剤、フィルム状接着剤付きダイシングテープ及び半導体装置の製造方法
CN104804687B (zh) * 2015-04-13 2017-03-15 深圳广恒威科技有限公司 导电固晶粘结胶液、导电固晶粘接胶膜、制备方法及应用
KR102360575B1 (ko) * 2015-05-08 2022-02-09 헨켈 아이피 앤드 홀딩 게엠베하 소결성 필름 및 페이스트, 및 그의 사용 방법
CN104893601B (zh) * 2015-05-19 2017-05-17 中国航空工业集团公司北京航空材料研究院 一种具有两种导电结构的导电胶膜及其制备方法
CN105504678A (zh) * 2015-10-25 2016-04-20 国网山东省电力公司临沂供电公司 一种耐腐蚀的导电材料及其应用
CN105419673A (zh) * 2015-12-29 2016-03-23 舜坦（上海）新材料有限公司 导电地板胶
CN105567112B (zh) * 2016-01-18 2018-06-19 杨宜丰 一种各向异性导电胶及其制备方法
CN105419674B (zh) * 2016-01-18 2017-12-05 杨宜丰 一种漂浮式全方位导电胶膜
CN105810108A (zh) * 2016-04-08 2016-07-27 太仓凯丰电子科技有限公司 Led电容式触摸学习调光屏
JP7311415B2 (ja) * 2016-11-02 2023-07-19 バイオニア コーポレーション コア‐シェル構造の銀コーティングされた銅ナノワイヤを含むエポキシペースト組成物、およびそれを含む導電性フィルム
TWI720290B (zh) * 2017-05-19 2021-03-01 日商拓自達電線股份有限公司 導電性接著劑
CN107393626A (zh) * 2017-06-27 2017-11-24 西安工程大学 一种热法粉状电子浆料及其制备方法
CN108441151B (zh) * 2018-03-19 2021-04-27 Tcl华星光电技术有限公司 一种碳纳米管导电球、碳纳米管导电胶及液晶显示器
CN108707447A (zh) * 2018-06-13 2018-10-26 昆山建皇光电科技有限公司 强粘结高导电焊接胶
TW202219214A (zh) 2020-08-27 2022-05-16 德商漢高股份有限及兩合公司 導電性單組分型(1k)環氧樹脂調配物

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4695508A (en) * 1985-09-06 1987-09-22 The Yokohama Rubber Co., Ltd. Adhesive composition
US4999136A (en) * 1988-08-23 1991-03-12 Westinghouse Electric Corp. Ultraviolet curable conductive resin
US5250228A (en) * 1991-11-06 1993-10-05 Raychem Corporation Conductive polymer composition
US5645764A (en) * 1995-01-19 1997-07-08 International Business Machines Corporation Electrically conductive pressure sensitive adhesives

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US499136A (en) 1893-06-06 miller
JP2877309B2 (ja) 1988-01-06 1999-03-31 株式会社東芝 ゴム変性フェノール樹脂の製造方法
US5043102A (en) * 1989-11-29 1991-08-27 Advanced Products, Inc. Conductive adhesive useful for bonding a semiconductor die to a conductive support base
JPH03277650A (ja) * 1990-03-28 1991-12-09 Nissan Motor Co Ltd 接着性にすぐれた導電性樹脂組成物
JPH04332404A (ja) 1991-05-07 1992-11-19 Nec Corp 異方性導電材料及びこれを用いた集積回路素子の接続方法
US5620795A (en) * 1993-11-10 1997-04-15 Minnesota Mining And Manufacturing Company Adhesives containing electrically conductive agents
US5863988A (en) * 1995-12-25 1999-01-26 Tomoegawa Paper Co., Ltd. Liquid adhesive for electronic parts and adhesive tape
DE69710089T2 (de) * 1996-08-16 2002-08-22 Hugh P Craig Druckfähige zusammensetzungen und deren auftragung auf dielektrische oberflächen für die herstellung von gedruckten leiterplatten
DE69722196T2 (de) 1997-07-17 2004-04-01 Raytheon Co., Lexington Leitfähiger Epoxidharzklebstoff mit verbessertem Fallwiderstand
US6246123B1 (en) * 1998-05-04 2001-06-12 Motorola, Inc. Transparent compound and applications for its use
WO1999067324A1 (en) 1998-06-22 1999-12-29 Loctite Corporation Thermosetting resin compositions useful as underfill sealants
JP2003055583A (ja) * 1998-12-08 2003-02-26 Taiyo Ink Mfg Ltd 光硬化型異方性導電組成物及びそれを用いて形成した異方性導電パターン
US6344155B1 (en) * 1999-04-06 2002-02-05 Tomoegawa Paper Co., Ltd. Electrically conductive adhesive composition, electrically conductive adhesive sheet and use thereof
JP4172257B2 (ja) * 2002-11-21 2008-10-29 日立化成工業株式会社 樹脂ペースト組成物及びこれを用いた半導体装置。
CA2503157A1 (en) 2003-03-10 2004-09-23 Dainippon Ink And Chemicals, Inc. Conductive resin composition, process for producing the same and separator for a fuel cell
CN1946795B (zh) 2003-11-21 2010-06-23 洛德公司 晶片用双阶段底部填充胶

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4695508A (en) * 1985-09-06 1987-09-22 The Yokohama Rubber Co., Ltd. Adhesive composition
US4999136A (en) * 1988-08-23 1991-03-12 Westinghouse Electric Corp. Ultraviolet curable conductive resin
US5250228A (en) * 1991-11-06 1993-10-05 Raychem Corporation Conductive polymer composition
US5645764A (en) * 1995-01-19 1997-07-08 International Business Machines Corporation Electrically conductive pressure sensitive adhesives

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
李子东，李广宇，吉利，郝向杰.胶黏剂助剂 第1版.化学工业出版社,2005,11-12.
李子东,李广宇,吉利,郝向杰.胶黏剂助剂 第1版.化学工业出版社,2005,11-12. *
肖思煜.环氧导电粘合剂的研究.电机电器技术 1998年第1期.1998,(1998年第1期),32-36.
肖思煜.环氧导电粘合剂的研究.电机电器技术 1998年第1期.1998,(1998年第1期),32-36. *
黄恒超，沈家瑞，朱荫兰，李凤仙.环氧树脂/咪唑类粘合剂的导电性能.华南理工大学学报（自然科学版）第22卷 第6期.1994,第22卷(第6期),113-117.
黄恒超,沈家瑞,朱荫兰,李凤仙.环氧树脂/咪唑类粘合剂的导电性能.华南理工大学学报(自然科学版)第22卷 第6期.1994,第22卷(第6期),113-117. *

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KR20060097610A (ko) 2006-09-14
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ATE465497T1 (de) 2010-05-15
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US7326369B2 (en) 2008-02-05
CN1831073A (zh) 2006-09-13

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