JP2006203202A5 - - Google Patents
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- Publication number
- JP2006203202A5 JP2006203202A5 JP2006008978A JP2006008978A JP2006203202A5 JP 2006203202 A5 JP2006203202 A5 JP 2006203202A5 JP 2006008978 A JP2006008978 A JP 2006008978A JP 2006008978 A JP2006008978 A JP 2006008978A JP 2006203202 A5 JP2006203202 A5 JP 2006203202A5
- Authority
- JP
- Japan
- Prior art keywords
- forming
- nitride film
- semiconductor substrate
- silicon nitride
- gate pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 9
- 238000000034 method Methods 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 5
- 239000012535 impurity Substances 0.000 claims 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- 238000005468 ion implantation Methods 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000011065 in-situ storage Methods 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 239000002243 precursor Substances 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2005-0004733 | 2005-01-18 | ||
| KR1020050004733A KR100593752B1 (ko) | 2005-01-18 | 2005-01-18 | 불순물들이 제거된 실리콘 질화막을 구비하는 반도체소자의 제조방법 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006203202A JP2006203202A (ja) | 2006-08-03 |
| JP2006203202A5 true JP2006203202A5 (enExample) | 2009-03-05 |
| JP4795028B2 JP4795028B2 (ja) | 2011-10-19 |
Family
ID=36684503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006008978A Expired - Fee Related JP4795028B2 (ja) | 2005-01-18 | 2006-01-17 | 不純物が除去されたシリコン窒化膜を備える半導体素子の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7416997B2 (enExample) |
| JP (1) | JP4795028B2 (enExample) |
| KR (1) | KR100593752B1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008057581A1 (en) | 2006-11-08 | 2008-05-15 | Playtex Products, Inc. | Tampon pledget for increased bypass leakage protection |
| US10242866B2 (en) * | 2017-03-08 | 2019-03-26 | Lam Research Corporation | Selective deposition of silicon nitride on silicon oxide using catalytic control |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10303141A (ja) * | 1997-04-28 | 1998-11-13 | Sony Corp | 半導体装置及びその製造方法 |
| US5874368A (en) | 1997-10-02 | 1999-02-23 | Air Products And Chemicals, Inc. | Silicon nitride from bis(tertiarybutylamino)silane |
| JP2001156065A (ja) * | 1999-11-24 | 2001-06-08 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法および半導体製造装置 |
| US6515350B1 (en) | 2000-02-22 | 2003-02-04 | Micron Technology, Inc. | Protective conformal silicon nitride films and spacers |
| JP4849711B2 (ja) * | 2000-10-31 | 2012-01-11 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
| JP4257055B2 (ja) * | 2001-11-15 | 2009-04-22 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
| KR100480912B1 (ko) * | 2002-06-28 | 2005-04-07 | 주식회사 하이닉스반도체 | 캐패시터 형성 방법 |
| KR100882090B1 (ko) * | 2002-12-30 | 2009-02-05 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 제조방법 |
| JP2004266158A (ja) | 2003-03-03 | 2004-09-24 | Applied Materials Inc | シリコン窒化膜、その形成方法及び装置、並びに半導体素子 |
| JP3756894B2 (ja) * | 2003-06-13 | 2006-03-15 | 株式会社東芝 | 窒化膜の膜質改善方法、及び半導体装置の製造方法 |
| US20050059260A1 (en) * | 2003-09-15 | 2005-03-17 | Haowen Bu | CMOS transistors and methods of forming same |
| JP2006186210A (ja) * | 2004-12-28 | 2006-07-13 | Murata Mfg Co Ltd | コモンモードチョークコイル部品 |
-
2005
- 2005-01-18 KR KR1020050004733A patent/KR100593752B1/ko not_active Expired - Fee Related
- 2005-11-17 US US11/281,177 patent/US7416997B2/en not_active Expired - Fee Related
-
2006
- 2006-01-17 JP JP2006008978A patent/JP4795028B2/ja not_active Expired - Fee Related
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