JP2006203202A - 不純物が除去されたシリコン窒化膜を備える半導体素子の製造方法 - Google Patents
不純物が除去されたシリコン窒化膜を備える半導体素子の製造方法 Download PDFInfo
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- JP2006203202A JP2006203202A JP2006008978A JP2006008978A JP2006203202A JP 2006203202 A JP2006203202 A JP 2006203202A JP 2006008978 A JP2006008978 A JP 2006008978A JP 2006008978 A JP2006008978 A JP 2006008978A JP 2006203202 A JP2006203202 A JP 2006203202A
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- nitride film
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 86
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 239000004065 semiconductor Substances 0.000 title claims abstract description 80
- 239000012535 impurity Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 33
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims description 30
- 125000006850 spacer group Chemical group 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 17
- 150000002500 ions Chemical class 0.000 claims description 14
- 238000005468 ion implantation Methods 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000002243 precursor Substances 0.000 claims description 5
- 238000011065 in-situ storage Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000012686 silicon precursor Substances 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 98
- 239000007789 gas Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- -1 BTBAS Chemical class 0.000 description 1
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical group CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
【解決手段】この方法は、半導体基板上にシリコン窒化膜を形成することを具備する。前記シリコン窒化膜を有する半導体基板をアンモニア(NH3)気体雰囲気で熱処理して前記シリコン窒化膜内の不純物を除去する。一実施形態によって、前記シリコン窒化膜はシリコン前駆体としてBTBASを用いて形成することができる。前記シリコン窒化膜が前記BTBASを用いて形成する場合でも前記シリコン窒化膜内の不純物は有効に除去できる。
【選択図】図1
Description
本発明が解決しようとする他の技術的課題は、シリコン窒化膜内の不純物を有効に除去することで半導体素子の電気的特性の劣化を最小化することにある。
他の実施形態において、前記熱処理は約600℃〜約700℃の温度で実行することができる。前記熱処理は急速熱処理装置を用いて約10秒〜約60秒間実行することができる。また、前記熱処理間に前記アンモニア気体は約20sccm〜約100sccmの流量で前記半導体基板の上部に流される。
また他の実施形態において、前記シリコン窒化膜を形成することと、前記半導体基板を熱処理することとを少なくとも1回順次に繰り返して実行することができる。この場合に、前記シリコン窒化膜は、約50Å〜約300Åの厚さを有するように形成することができる。
他の実施形態において、前記窒化膜スペーサを形成する前に、前記シリコン窒化膜を形成することと、前記半導体基板を熱処理することとを少なくとも1回順次に繰り返して実行することができる。この場合、前記シリコン窒化膜は約50Å〜約300Åの厚さを有するように形成することができる。
19:ゲートパターン
25:シリコン酸化膜
25´:酸化膜スペーサ
27:シリコン窒化膜
27´:窒化膜スペーサ
29:熱処理
31:ゲートスペーサ
37:金属シリサイド膜
Claims (20)
- 半導体基板上にシリコン窒化膜を形成し、
前記シリコン窒化膜を有する半導体基板をアンモニア(NH3)気体雰囲気で熱処理して前記シリコン窒化膜内の不純物を除去することを含むことを特徴とする半導体素子の製造方法。 - 前記シリコン窒化膜を形成することは、C8H22N2Siを前駆体として用いることを含むことを特徴とする請求項1記載の半導体素子の製造方法。
- 前記熱処理は、約600℃〜約700℃の温度で実行することを特徴とする請求項1記載の半導体素子の製造方法。
- 前記熱処理は急速熱処理装置を用いて約10秒〜約60秒の間実行することを特徴とする請求項1記載の半導体素子の製造方法。
- 前記熱処理の間、前記アンモニア気体は約20sccm〜約100sccmの流量で前記半導体基板の上部に流すことを特徴とする請求項1記載の半導体素子の製造方法。
- 前記シリコン窒化膜を形成することと、前記半導体基板を熱処理することとはインサイチュ方式で実行されることを特徴とする請求項1記載の半導体素子の製造方法。
- 前記シリコン窒化膜を形成することと、前記半導体基板を熱処理することとを少なくとも1回順次に繰り返して実行することを特徴とする請求項1記載の半導体素子の製造方法。
- 前記シリコン窒化膜は約50Å〜約300Åの厚さを有するように形成することを特徴とする請求項7記載の半導体素子の製造方法。
- 半導体基板上にゲートパターンを形成するステップと、
前記ゲートパターンを有する半導体基板をコンフォーマルに覆うシリコン窒化膜を形成するステップと、
前記シリコン窒化膜を有する半導体基板をアンモニア(NH3)気体雰囲気で熱処理して前記シリコン窒化膜内の不純物を除去するステップと、
前記シリコン窒化膜を異方性エッチングして前記ゲートパターンの側壁上に窒化膜スペーサを形成するステップと、
を含むことを特徴とする半導体素子の製造方法。 - 前記シリコン窒化膜を形成することは、C8H22N2Siを前駆体として用いることを含むことを特徴とする請求項9記載の半導体素子の製造方法。
- 前記熱処理は、約600℃〜約700℃の温度で実行することを特徴とする請求項9記載の半導体素子の製造方法。
- 前記熱処理は、急速熱処理装置を用いて約10秒〜約60秒の間実行することを特徴とする請求項9記載の半導体素子の製造方法。
- 前記熱処理の間、前記アンモニア気体は約20sccm〜約100sccmの流量で前記半導体基板の上部に流すことを特徴とする請求項9記載の半導体素子の製造方法。
- 前記シリコン窒化膜を形成することと、前記半導体基板を熱処理することとはインサイチュ方式で実行することを特徴とする請求項9記載の半導体素子の製造方法。
- 前記窒化膜スペーサを形成する前に、前記シリコン窒化膜を形成することと、前記半導体基板を熱処理することを少なくとも1回順次に繰り返して実行することを特徴とする請求項9記載の半導体素子の製造方法。
- 前記シリコン窒化膜は、約50Å〜約300Åの厚さを有するように形成することを特徴とする請求項15記載の半導体素子の製造方法。
- 前記シリコン窒化膜を形成する前に、前記ゲートパターンを有する半導体基板をコンフォーマルに覆うシリコン酸化膜を形成することをさらに含み、前記シリコン窒化膜は前記シリコン酸化膜上にコンフォーマルに形成することを特徴とする請求項9記載の半導体素子の製造方法。
- 前記シリコン酸化膜を形成する前に、前記ゲートパターンをイオン注入マスクとして用いて前記半導体基板内に不純物イオンを注入して低濃度不純物領域を形成し、
前記窒化膜スペーサを形成した後、前記ゲートパターン及び前記窒化膜スペーサをイオン注入マスクとして用いて前記半導体基板内に不純物イオンを注入してソース/ドレイン領域を形成することをさらに含むことを特徴とする請求項17記載の半導体素子の製造方法。 - 半導体基板上にゲートパターンを形成するステップと、
前記ゲートパターンをイオン注入マスクとして用いて前記半導体基板内に不純物イオンを注入して低濃度不純物領域を形成するステップと、
前記ゲートパターンを有する半導体基板をコンフォーマルに覆うシリコン酸化膜を形成するステップと、
前記シリコン酸化膜上にシリコン窒化膜をコンフォーマルに形成し、前記シリコン窒化膜はC8H22N2Siを前駆体として用いて形成するステップと、
前記シリコン窒化膜を有する前記半導体基板をアンモニア気体雰囲気で熱処理して前記シリコン窒化膜内の不純物を除去するステップと、
前記シリコン窒化膜及び前記シリコン酸化膜を異方性エッチングして前記ゲートパターンの側壁を順に覆う酸化膜スペーサ及び窒化膜スペーサを形成するステップと、
前記ゲートパターン及びスペーサをイオン注入マスクとして用いて前記半導体基板内に不純物イオンを注入してソース/ドレイン領域を形成するステップと、
前記ゲートパターンの上部面及び前記ソース/ドレイン領域の上部面上に選択的に金属シリサイド膜を形成するステップと、
を含むことを特徴とする半導体素子の製造方法。 - 前記窒化膜スペーサを形成する前に、前記シリコン窒化膜を形成することと、前記半導体基板を熱処理することとを少なくとも1回順次に繰り返して実行することを特徴とする請求項19記載の半導体素子の製造方法。
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