JP2006191137A5 - - Google Patents

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Publication number
JP2006191137A5
JP2006191137A5 JP2006046189A JP2006046189A JP2006191137A5 JP 2006191137 A5 JP2006191137 A5 JP 2006191137A5 JP 2006046189 A JP2006046189 A JP 2006046189A JP 2006046189 A JP2006046189 A JP 2006046189A JP 2006191137 A5 JP2006191137 A5 JP 2006191137A5
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JP
Japan
Prior art keywords
film
conductive film
groove
insulating film
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006046189A
Other languages
English (en)
Japanese (ja)
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JP2006191137A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006046189A priority Critical patent/JP2006191137A/ja
Priority claimed from JP2006046189A external-priority patent/JP2006191137A/ja
Publication of JP2006191137A publication Critical patent/JP2006191137A/ja
Publication of JP2006191137A5 publication Critical patent/JP2006191137A5/ja
Pending legal-status Critical Current

Links

JP2006046189A 2006-02-23 2006-02-23 半導体集積回路装置の製造方法 Pending JP2006191137A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006046189A JP2006191137A (ja) 2006-02-23 2006-02-23 半導体集積回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006046189A JP2006191137A (ja) 2006-02-23 2006-02-23 半導体集積回路装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP18745099A Division JP3998373B2 (ja) 1999-07-01 1999-07-01 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JP2006191137A JP2006191137A (ja) 2006-07-20
JP2006191137A5 true JP2006191137A5 (enExample) 2007-08-09

Family

ID=36797885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006046189A Pending JP2006191137A (ja) 2006-02-23 2006-02-23 半導体集積回路装置の製造方法

Country Status (1)

Country Link
JP (1) JP2006191137A (enExample)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2848260B2 (ja) * 1995-01-30 1999-01-20 日本電気株式会社 半導体装置およびその製造方法
JP3623834B2 (ja) * 1995-01-31 2005-02-23 富士通株式会社 半導体記憶装置及びその製造方法
US6617205B1 (en) * 1995-11-20 2003-09-09 Hitachi, Ltd. Semiconductor storage device and process for manufacturing the same
JPH09283719A (ja) * 1996-04-09 1997-10-31 Hitachi Ltd 半導体集積回路装置及び当該装置の製造方法
JP3466851B2 (ja) * 1997-01-20 2003-11-17 株式会社東芝 半導体装置及びその製造方法
US6255159B1 (en) * 1997-07-14 2001-07-03 Micron Technology, Inc. Method to form hemispherical grained polysilicon
JP3407022B2 (ja) * 1999-03-17 2003-05-19 Ｎｅｃエレクトロニクス株式会社 半導体装置及びその製造方法、並びに半導体記憶装置
JP3408450B2 (ja) * 1999-04-20 2003-05-19 日本電気株式会社 半導体装置およびその製造方法
JP2000323677A (ja) * 1999-05-12 2000-11-24 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法

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