JP2006191137A - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法 Download PDF

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Publication number
JP2006191137A
JP2006191137A JP2006046189A JP2006046189A JP2006191137A JP 2006191137 A JP2006191137 A JP 2006191137A JP 2006046189 A JP2006046189 A JP 2006046189A JP 2006046189 A JP2006046189 A JP 2006046189A JP 2006191137 A JP2006191137 A JP 2006191137A
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JP
Japan
Prior art keywords
film
groove
conductive film
photoresist
insulating film
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2006046189A
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English (en)
Japanese (ja)
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JP2006191137A5 (enExample
Inventor
Ryoichi Furukawa
亮一 古川
Kazuyuki Suko
一行 須向
Masayuki Hiranuma
雅幸 平沼
Koichi Saito
康一 齋藤
Hirohiko Yamamoto
裕彦 山本
Masayoshi Yoshida
正義 吉田
Masayuki Ishizaka
正行 石坂
Masaki Shimoda
真岐 下田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2006046189A priority Critical patent/JP2006191137A/ja
Publication of JP2006191137A publication Critical patent/JP2006191137A/ja
Publication of JP2006191137A5 publication Critical patent/JP2006191137A5/ja
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP2006046189A 2006-02-23 2006-02-23 半導体集積回路装置の製造方法 Pending JP2006191137A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006046189A JP2006191137A (ja) 2006-02-23 2006-02-23 半導体集積回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006046189A JP2006191137A (ja) 2006-02-23 2006-02-23 半導体集積回路装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP18745099A Division JP3998373B2 (ja) 1999-07-01 1999-07-01 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JP2006191137A true JP2006191137A (ja) 2006-07-20
JP2006191137A5 JP2006191137A5 (enExample) 2007-08-09

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ID=36797885

Family Applications (1)

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JP2006046189A Pending JP2006191137A (ja) 2006-02-23 2006-02-23 半導体集積回路装置の製造方法

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JP (1) JP2006191137A (enExample)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08204150A (ja) * 1995-01-30 1996-08-09 Nec Corp 半導体装置およびその製造方法
JPH08274278A (ja) * 1995-01-31 1996-10-18 Fujitsu Ltd 半導体記憶装置及びその製造方法
WO1997019468A1 (en) * 1995-11-20 1997-05-29 Hitachi, Ltd. Semiconductor storage device and process for manufacturing the same
JPH09283719A (ja) * 1996-04-09 1997-10-31 Hitachi Ltd 半導体集積回路装置及び当該装置の製造方法
JPH10209391A (ja) * 1997-01-20 1998-08-07 Toshiba Corp 半導体装置及びその製造方法
WO1999004434A2 (en) * 1997-07-14 1999-01-28 Micron Technology, Inc. Hemispherical grained polysilicon semiconductor capacitor structure and method
JP2000269452A (ja) * 1999-03-17 2000-09-29 Nec Corp 半導体装置及びその製造方法、並びに半導体記憶装置
JP2000307078A (ja) * 1999-04-20 2000-11-02 Nec Corp 半導体装置およびその製造方法
JP2000323677A (ja) * 1999-05-12 2000-11-24 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08204150A (ja) * 1995-01-30 1996-08-09 Nec Corp 半導体装置およびその製造方法
JPH08274278A (ja) * 1995-01-31 1996-10-18 Fujitsu Ltd 半導体記憶装置及びその製造方法
WO1997019468A1 (en) * 1995-11-20 1997-05-29 Hitachi, Ltd. Semiconductor storage device and process for manufacturing the same
JPH09283719A (ja) * 1996-04-09 1997-10-31 Hitachi Ltd 半導体集積回路装置及び当該装置の製造方法
JPH10209391A (ja) * 1997-01-20 1998-08-07 Toshiba Corp 半導体装置及びその製造方法
WO1999004434A2 (en) * 1997-07-14 1999-01-28 Micron Technology, Inc. Hemispherical grained polysilicon semiconductor capacitor structure and method
JP2001510945A (ja) * 1997-07-14 2001-08-07 マイクロン・テクノロジー・インコーポレーテッド 半球粒状ポリシリコン半導体構造及びその製造方法
JP2000269452A (ja) * 1999-03-17 2000-09-29 Nec Corp 半導体装置及びその製造方法、並びに半導体記憶装置
JP2000307078A (ja) * 1999-04-20 2000-11-02 Nec Corp 半導体装置およびその製造方法
JP2000323677A (ja) * 1999-05-12 2000-11-24 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法

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