JP2006165585A - セラミック多層プリント回路基板 - Google Patents
セラミック多層プリント回路基板 Download PDFInfo
- Publication number
- JP2006165585A JP2006165585A JP2005368893A JP2005368893A JP2006165585A JP 2006165585 A JP2006165585 A JP 2006165585A JP 2005368893 A JP2005368893 A JP 2005368893A JP 2005368893 A JP2005368893 A JP 2005368893A JP 2006165585 A JP2006165585 A JP 2006165585A
- Authority
- JP
- Japan
- Prior art keywords
- green tape
- glass
- printed circuit
- circuit board
- multilayer printed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 40
- 239000000203 mixture Substances 0.000 claims abstract description 59
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000010304 firing Methods 0.000 claims abstract description 27
- 238000007650 screen-printing Methods 0.000 claims abstract description 7
- 239000011521 glass Substances 0.000 claims description 103
- 229910052709 silver Inorganic materials 0.000 claims description 29
- 239000004332 silver Substances 0.000 claims description 29
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910000531 Co alloy Inorganic materials 0.000 claims description 5
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 8
- 229910052810 boron oxide Inorganic materials 0.000 claims 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims 4
- 239000011787 zinc oxide Substances 0.000 claims 4
- OYPRJOBELJOOCE-BKFZFHPZSA-N Calcium-45 Chemical compound [45Ca] OYPRJOBELJOOCE-BKFZFHPZSA-N 0.000 claims 2
- 229910000914 Mn alloy Inorganic materials 0.000 claims 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims 2
- 239000000292 calcium oxide Substances 0.000 claims 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims 2
- 239000000395 magnesium oxide Substances 0.000 claims 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 2
- 239000000976 ink Substances 0.000 abstract description 77
- 239000003990 capacitor Substances 0.000 abstract description 76
- 239000000945 filler Substances 0.000 abstract description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 52
- 229910000833 kovar Inorganic materials 0.000 description 24
- 230000004888 barrier function Effects 0.000 description 23
- 239000000843 powder Substances 0.000 description 22
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 17
- 229910002113 barium titanate Inorganic materials 0.000 description 17
- 229920005989 resin Polymers 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 239000004020 conductor Substances 0.000 description 11
- 238000012360 testing method Methods 0.000 description 11
- 239000002241 glass-ceramic Substances 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 230000001590 oxidative effect Effects 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- 239000002270 dispersing agent Substances 0.000 description 8
- 238000007639 printing Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 239000001856 Ethyl cellulose Substances 0.000 description 5
- 238000010344 co-firing Methods 0.000 description 5
- 238000010790 dilution Methods 0.000 description 5
- 239000012895 dilution Substances 0.000 description 5
- 229920001249 ethyl cellulose Polymers 0.000 description 5
- 235000019325 ethyl cellulose Nutrition 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- IRIAEXORFWYRCZ-UHFFFAOYSA-N Butylbenzyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCC1=CC=CC=C1 IRIAEXORFWYRCZ-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000032798 delamination Effects 0.000 description 4
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000009472 formulation Methods 0.000 description 4
- 229910052839 forsterite Inorganic materials 0.000 description 4
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229940116411 terpineol Drugs 0.000 description 4
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 3
- RUMACXVDVNRZJZ-UHFFFAOYSA-N 2-methylpropyl 2-methylprop-2-enoate Chemical compound CC(C)COC(=O)C(C)=C RUMACXVDVNRZJZ-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000003607 modifier Substances 0.000 description 3
- 238000010943 off-gassing Methods 0.000 description 3
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910020599 Co 3 O 4 Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000006112 glass ceramic composition Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- ZTVIKZXZYLEVOL-DGKWVBSXSA-N 2-hydroxy-2-phenylacetic acid [(1R,5S)-8-methyl-8-azabicyclo[3.2.1]octan-3-yl] ester Chemical group C([C@H]1CC[C@@H](C2)N1C)C2OC(=O)C(O)C1=CC=CC=C1 ZTVIKZXZYLEVOL-DGKWVBSXSA-N 0.000 description 1
- 241000723347 Cinnamomum Species 0.000 description 1
- 241000416536 Euproctis pseudoconspersa Species 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 1
- 239000004110 Zinc silicate Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- BOGASOWHESMEKT-UHFFFAOYSA-N barium;oxotin Chemical compound [Ba].[Sn]=O BOGASOWHESMEKT-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 235000017803 cinnamon Nutrition 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- -1 quinnite Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- XSMMCTCMFDWXIX-UHFFFAOYSA-N zinc silicate Chemical compound [Zn+2].[O-][Si]([O-])=O XSMMCTCMFDWXIX-UHFFFAOYSA-N 0.000 description 1
- 235000019352 zinc silicate Nutrition 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/167—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/22—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions containing two or more distinct frits having different compositions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C13/00—Resistors not provided for elsewhere
- H01C13/02—Structural combinations of resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/30—Apparatus or processes specially adapted for manufacturing resistors adapted for baking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/003—Thick film resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01077—Iridium [Ir]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
- H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
- H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4688—Composite multilayer circuits, i.e. comprising insulating layers having different properties
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Abstract
【解決手段】キャパシタ、抵抗器およびRFフィルタなどの受動素子が、グリーンテープ上に適したインクをスクリーン印刷することによって形成され、構成要素インク層の上下の導電層(14および15)で完成され得る。次いで、得られるグリーンテープ積層体は焼成され、埋込みキャパシタが形成される。グリーンテープ積層体を金属支持基板上に貼り合わせることによって、xおよびy次元への収縮が制限され、構成要素が精密許容範囲を維持し得る。多数のグリーンテープ層が積層されるとき、適量の酸化充填剤、例えば、グリーンテープ組成の約15重量%未満の酸化充填剤を有するグリーンテープが、より多い量、例えば、25重量%を超える酸化充填剤を有するグリーンテープと交互に重ねられると、改善された収縮が得られる。
【選択図】図2
Description
非結晶化ガラスと混合されると、銅/ニッケルクラッドまたはめっきされたコバール板(Fe/Co/Ni合金板、以下、Fe/Co/Ni合金をコバールとする)などの金属コア支持基板に付着され得るグリーンテープ組成物を形成する、結晶化ガラスのセラミック組成物が公知である。コバール(kovar)は、Carpenter Technologyから市販により入手可能なFe/Co/Ni合金である。このような一つの合金は、53.8重量パーセントの鉄、29重量パーセントのニッケル、17重量パーセントのコバルト、および0.2重量パーセントのマンガンを含む。これらの合金は、ある温度で膨張係数に急激な変化を示す。これらの合金は、コバールコアの両面に1ミル厚さの銅のコーティングおよび1ミル厚さのニッケルのコーティングを有する状態で利用可能である。これらの合金は、5.8ppm/℃の熱膨張率(以下TCEとする)(室温(RT:Room Temperature)から300℃まで)および21.8ワット/m゜Kの熱伝導率(z方向または厚さ方向)を有する。
本発明者は、支持基板上に設けられた適切なガラスからなるグリーンテープ積層体中に埋め込まれるキャパシタ、抵抗器およびRF(無線)回路構成要素などの受動素子が、xおよびy次元の収縮を防止することを見出した。支持体からの剥離を起こさず、かつxおよびy次元の収縮を起こさずに、精密許容範囲を有して構成要素が埋め込まれたプリント回路基板を製造するように、適切な誘電性または抵抗性インクおよび導電層は、グリーンテープ上にスクリーン印刷され、他のグリーンテープ間に埋め込まれ、貼り合わせられ、低い温度、すなわち、850から900℃で焼成される。
様々な誘電性インクの配合(formulation)、異なる誘電率およびTCC(温度係数)を有する埋込みキャパシタの形成方法および試験結果をまず論じる。
★★ 85℃
2 3から5μm中央粒子サイズ
3 2から3μm中央粒子サイズ
4 ICI Americas, Inc.の登録商標(ポリオキシアルキレンアミン)
5 Monsanto Co.の登録商標(ポリビニルブチラール)
6 Monsanto Co.の登録商標(フタル酸ブチルベンジル)
2 Aqualon Corporationのエチルセルロース樹脂N300
3 エチルセルロース樹脂N14
4 エルバサイト(Elvacite)2045(メタクリル酸イソブチル)
★★導電体として銀−パラジウム粉末を使用
★★ IRは5.1×1010オームであった。
2)Monsanto Co.の登録商標(ポリビニルブチラール)
3)Monsanto Co.の登録商標(フタル酸ブチルベンジル)
実施例1
三層に銀ベースのインクが塗布された(C、D)十一層のタイプ1グリーンテープ(A)と七層のタイプ2グリーンテープ(B)とを、図8に示されるように交互に重ねた。次いで、グリーンテープ積層体を貼り合わせ、コバール支持基板の上に配置し、同時に貼り合わせた。その後、積層体を焼成した。
実施例2
三層が金属化された平面を有する十一層のタイプ1グリーンテープを、図8に示されるようにタイプ2グリーンテープと交互に重ねた。図8は、Aとしてタイプ1グリーンテープを、Bとしてタイプ2グリーンテープを示し、Cは埋込みRFフィルタを示し、Dは銀パターニングを示す。グリーンテープを交互に重ね、積層し、貼り合わせ、コバール支持体に同時に貼り合わせ、焼成した。焼成された積層体の厚さは、2.40mmであった。
実施例3
十一層のタイプ1グリーンテープおよび七層のタイプ2グリーンテープを交互に重ね、積層し、貼り合わせ、焼成した。得られた積層体の厚さは、2.20mmであった。
実施例4
図9に示されるように、一層上に埋込みフィルタ(C)を有し、二層上に接地平面(D)を有する、十五層のタイプ1(A)グリーンテープと、八層のタイプ2グリーンテープ(B)とを交互に重ね、積層し、貼り合わせ、焼成し、厚さが2.52mmの積層体を形成した。
★★ セラミック単独
様々なタイプ1およびタイプ2のグリーンテープ積層体の特性が865℃で焼成され、これらの特性が測定された。結果は以下の表28に要約される。
Claims (10)
- 埋め込みレジスタを含むセラミック多層プリント回路基板であって、
17.33〜24.8重量%の酸化ルテニウムと、
3〜7重量%の酸化アルミニウム、30〜40重量%の酸化ホウ素、3〜7重量%の酸化カルシウム、および45〜55重量%の酸化亜鉛を含むか、または、10〜35重量%の酸化ホウ素、10〜30重量%の酸化マグネシウム、10〜40重量%の二酸化ケイ素、および20〜55重量%の酸化亜鉛を含む、74.3〜81.7重量%のガラス組成であって、850〜900℃の焼成温度に構成されたガラスとを含むインク組成物によってスクリーン印刷されたレジスタ層を備え、
該レジスタ層は、金属支持基板上にラミネートされたグリーンテープ積層体上に印刷されて、導電金属層を有する1または2つのグリーンテープの層で覆われている、セラミック多層プリント回路基板。 - 前記レジスタ層は、室温から125℃の温度範囲にわたって300オーム/平方から100キロオーム/平方の抵抗値と、室温から125℃の範囲にわたって200ppm/℃以下のTCR(熱膨張係数)とを有する、請求項1に記載のセラミック多層プリント回路基板。
- 前記金属支持基板が、フェロ/ニッケル/コバルト/マンガン合金から成る、請求項1に記載のセラミック多層プリント回路基板。
- 請求項1に記載のセラミック多層プリント回路基板の製造方法であって、
17.33〜24.8重量%の酸化ルテニウムと、3〜7重量%の酸化アルミニウム、30〜40重量%の酸化ホウ素、3〜7重量%の酸化カルシウム、および45〜55重量%の酸化亜鉛を含むか、または、10〜35重量%の酸化ホウ素、10〜30重量%の酸化マグネシウム、10〜40重量%の二酸化ケイ素、および20〜55重量%の酸化亜鉛を含む、74.3〜81.7重量%のガラス組成によって、低い焼成温度に構成されたガラスとを含み、850〜900℃の焼成温度を有するインク組成物を形成する工程と、
該インクをグリーンテープ積層体にスクリーン印刷することによってレジスタ層を形成する工程と、
該レジスタ層を1または2つのグリーンテープの層で覆う工程と、
前記グリーンテープ積層体と前記レジスタ層との積層体とを850〜900℃の温度で焼成する工程と、
を含むセラミック多層プリント回路基板の製造方法。 - 前記レジスタ層を第1の導電層に連結する工程をさらに含む、請求項4に記載のセラミック多層プリント回路基板の製造方法。
- 該焼成されたグリーンテープ積層体の上面を第2の導電層で被覆する工程と、
該焼成された多層構造を後焼成する工程と
をさらに含む請求項4に記載のセラミック多層プリント回路基板の製造方法。 - 前記第1の導電層が、銀から成る、請求項5に記載の方法。
- 前記第2の導電層が、銀−パラジウムまたは金から成る、請求項6に記載のセラミック多層プリント回路基板の製造方法。
- 前記グリーンテープ積層体が金属支持基板上に実装される、請求項4に記載のセラミック多層プリント回路基板の製造方法。
- 前記金属支持基板がフェロ/ニッケル/コバルト/マンガン合金である、請求項9に記載のセラミック多層プリント回路基板の製造方法。
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US81283297A | 1997-03-06 | 1997-03-06 | |
US08/812,172 US5866240A (en) | 1997-03-06 | 1997-03-06 | Thick ceramic on metal multilayer circuit board |
US08/812,151 US5953203A (en) | 1997-03-06 | 1997-03-06 | Multilayer ceramic circuit boards including embedded capacitors |
US09/031,745 US6055151A (en) | 1997-03-06 | 1998-02-27 | Multilayer ceramic circuit boards including embedded components |
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JP2005368893A Pending JP2006165585A (ja) | 1997-03-06 | 2005-12-21 | セラミック多層プリント回路基板 |
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EP (1) | EP1016106A4 (ja) |
JP (2) | JP3944791B2 (ja) |
KR (2) | KR100546471B1 (ja) |
TW (1) | TW405330B (ja) |
WO (1) | WO1998039784A1 (ja) |
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JP3944791B2 (ja) * | 1997-03-06 | 2007-07-18 | ラミナ セラミクス, インコーポレイテッド | セラミック多層プリント回路基板 |
US6191934B1 (en) * | 1998-10-02 | 2001-02-20 | Sarnoff Corporation & Co., Ltd. | High dielectric constant embedded capacitors |
US6300267B1 (en) * | 1998-11-05 | 2001-10-09 | Sarnoff Corporation | High dielectric constant buried capacitors with extended operating temperature ranges |
US6349456B1 (en) * | 1998-12-31 | 2002-02-26 | Motorola, Inc. | Method of manufacturing photodefined integral capacitor with self-aligned dielectric and electrodes |
US6317023B1 (en) | 1999-10-15 | 2001-11-13 | E. I. Du Pont De Nemours And Company | Method to embed passive components |
US6455930B1 (en) * | 1999-12-13 | 2002-09-24 | Lamina Ceramics, Inc. | Integrated heat sinking packages using low temperature co-fired ceramic metal circuit board technology |
US6970362B1 (en) | 2000-07-31 | 2005-11-29 | Intel Corporation | Electronic assemblies and systems comprising interposer with embedded capacitors |
US6775150B1 (en) | 2000-08-30 | 2004-08-10 | Intel Corporation | Electronic assembly comprising ceramic/organic hybrid substrate with embedded capacitors and methods of manufacture |
EP1263002A3 (en) * | 2001-05-17 | 2004-01-02 | Shipley Company LLC | Resistors |
EP1353542B1 (en) | 2001-12-25 | 2018-05-16 | Ngk Spark Plug Co., Ltd | Process for production of multilayered wiring board |
US6860000B2 (en) | 2002-02-15 | 2005-03-01 | E.I. Du Pont De Nemours And Company | Method to embed thick film components |
US6893710B2 (en) | 2003-04-18 | 2005-05-17 | Yageo Corporation | Multilayer ceramic composition |
KR20050019214A (ko) | 2003-08-18 | 2005-03-03 | 한국과학기술원 | 내장형 커패시터용 폴리머/세라믹 복합 페이스트 및 이를이용한 커패시터 제조방법 |
JP5402776B2 (ja) * | 2010-03-30 | 2014-01-29 | 株式会社村田製作所 | 金属ベース基板の製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0834096A (ja) * | 1994-05-20 | 1996-02-06 | Toray Ind Inc | セラミックス・グリーンシートおよびセラミックス・グリーンシート上にパターンを形成する方法 |
JP2002505805A (ja) * | 1997-03-06 | 2002-02-19 | サーノフ コーポレイション | 埋込み受動素子を有するセラミック多層プリント回路基板 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3968412A (en) * | 1973-07-27 | 1976-07-06 | General Electric Company | Thick film capacitor |
US4061584A (en) * | 1974-12-13 | 1977-12-06 | General Electric Company | High dielectric constant ink for thick film capacitors |
US4415624A (en) * | 1981-07-06 | 1983-11-15 | Rca Corporation | Air-fireable thick film inks |
JPS5817651A (ja) * | 1981-07-24 | 1983-02-01 | Hitachi Ltd | 多層回路板とその製造方法 |
GB2162167B (en) * | 1984-06-01 | 1988-01-20 | Narumi China Corp | Ceramic substrate material |
US5148005A (en) * | 1984-07-10 | 1992-09-15 | Raychem Corporation | Composite circuit protection devices |
JPH0725174B2 (ja) * | 1985-10-18 | 1995-03-22 | 富士ゼロックス株式会社 | 厚膜型サ−マルヘツドの製造方法 |
GB2182033A (en) * | 1985-10-24 | 1987-05-07 | Stc Plc | Dielectric compositions |
JPS62113758A (ja) * | 1985-10-25 | 1987-05-25 | 株式会社住友金属セラミックス | 低温焼成セラミツクス |
US5166658A (en) * | 1987-09-30 | 1992-11-24 | Raychem Corporation | Electrical device comprising conductive polymers |
US4961999A (en) * | 1988-07-21 | 1990-10-09 | E. I. Du Pont De Nemours And Company | Thermistor composition |
JP3019541B2 (ja) * | 1990-11-22 | 2000-03-13 | 株式会社村田製作所 | コンデンサ内蔵型配線基板およびその製造方法 |
US5256469A (en) * | 1991-12-18 | 1993-10-26 | General Electric Company | Multi-layered, co-fired, ceramic-on-metal circuit board for microelectronic packaging |
US5657199A (en) * | 1992-10-21 | 1997-08-12 | Devoe; Daniel F. | Close physical mounting of leaded amplifier/receivers to through holes in monolithic, buried-substrate, multiple capacitors simultaneous with electrical connection to dual capacitors otherwise transpiring, particularly for hearing aid filters |
JP3093601B2 (ja) * | 1994-09-28 | 2000-10-03 | 株式会社住友金属エレクトロデバイス | セラミック回路基板 |
US5581876A (en) * | 1995-01-27 | 1996-12-10 | David Sarnoff Research Center, Inc. | Method of adhering green tape to a metal support substrate with a bonding glass |
US5514451A (en) * | 1995-01-27 | 1996-05-07 | David Sarnoff Research Center, Inc. | Conductive via fill inks for ceramic multilayer circuit boards on support substrates |
JP3327045B2 (ja) * | 1995-04-28 | 2002-09-24 | 株式会社村田製作所 | 誘電体ペースト及びそれを用いた厚膜コンデンサ |
US5708570A (en) * | 1995-10-11 | 1998-01-13 | Hughes Aircraft Company | Shrinkage-matched circuit package utilizing low temperature co-fired ceramic structures |
-
1998
- 1998-03-03 JP JP53854898A patent/JP3944791B2/ja not_active Expired - Fee Related
- 1998-03-03 WO PCT/US1998/003270 patent/WO1998039784A1/en active Search and Examination
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- 2005-12-21 JP JP2005368893A patent/JP2006165585A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0834096A (ja) * | 1994-05-20 | 1996-02-06 | Toray Ind Inc | セラミックス・グリーンシートおよびセラミックス・グリーンシート上にパターンを形成する方法 |
JP2002505805A (ja) * | 1997-03-06 | 2002-02-19 | サーノフ コーポレイション | 埋込み受動素子を有するセラミック多層プリント回路基板 |
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JP3944791B2 (ja) | 2007-07-18 |
TW405330B (en) | 2000-09-11 |
KR20000075996A (ko) | 2000-12-26 |
EP1016106A4 (en) | 2007-12-12 |
WO1998039784A1 (en) | 1998-09-11 |
JP2002505805A (ja) | 2002-02-19 |
KR100516043B1 (ko) | 2005-09-26 |
KR100546471B1 (ko) | 2006-01-26 |
KR20050043991A (ko) | 2005-05-11 |
EP1016106A1 (en) | 2000-07-05 |
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