JP2006148133A - メガソニック超音波リンスを使用するイマージョン式フォトリソグラフィ - Google Patents
メガソニック超音波リンスを使用するイマージョン式フォトリソグラフィ Download PDFInfo
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- JP2006148133A JP2006148133A JP2005337792A JP2005337792A JP2006148133A JP 2006148133 A JP2006148133 A JP 2006148133A JP 2005337792 A JP2005337792 A JP 2005337792A JP 2005337792 A JP2005337792 A JP 2005337792A JP 2006148133 A JP2006148133 A JP 2006148133A
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- 238000007654 immersion Methods 0.000 title claims abstract description 29
- 238000000206 photolithography Methods 0.000 title claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 60
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000007788 liquid Substances 0.000 claims abstract description 27
- 230000005855 radiation Effects 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims description 5
- 239000004094 surface-active agent Substances 0.000 claims description 5
- 239000000872 buffer Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000006193 liquid solution Substances 0.000 claims 4
- 239000012487 rinsing solution Substances 0.000 claims 3
- 239000000243 solution Substances 0.000 claims 2
- 238000007599 discharging Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 13
- 238000011109 contamination Methods 0.000 abstract description 2
- 230000002411 adverse Effects 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 1
- -1 Quencher Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002563 ionic surfactant Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
【解決手段】基板上にフォトレジストを形成する工程と、少なくとも一つのメガソニック超音波源で振動されているリンス液によりフォトレジストをリンスする工程と、フォトレジストを液体に浸すときに、フォトレジストを放射源で露光する工程とを含む。
【選択図】図1
Description
Claims (10)
- 基板上にフォトレジストを形成する工程と、
少なくとも一つのメガソニック超音波源で振動されているリンス液により前記フォトレジストをリンスする工程と、
前記フォトレジストを液体に浸す間に前記フォトレジストを放射源に曝す工程と、を含むことを特徴とする方法。 - 前記フォトレジストをリンスする工程は、脱イオン水を含む振動リンス液を使用することを特徴とする請求項1記載の方法。
- 前記フォトレジストをリンスする工程は、界面活性剤を含む振動リンス液を使用することを特徴とする請求項1記載の方法。
- 前記フォトレジストをリンスする工程は、バッファを含む振動リンス液を使用することを特徴とする請求項1記載の方法。
- 前記フォトレジストをリンスする工程は、ポリマーを含む振動リンス液を使用することを特徴とする請求項1記載の方法。
- 前記フォトレジストをリンスする工程は、メガソニック超音波で振動されているリンス液槽またはメガソニック超音波で振動されているリンス液スプレーを使用することを特徴とする請求項1記載の方法。
- 前記フォトレジストをリンスする工程は、周波数が約10〜約1000KHzの間であるメガソニック超音波トランスデューサーを少なくとも一つ使用することを特徴とする請求項1記載の方法。
- 前記メガソニック超音波源で振動されているリンス液により前記フォトレジストをリンスする前に、前記基板および前記フォトレジストを加熱する工程、あるいは、脱イオン水で前記フォトレジストをリンスする工程を含むことを特徴とする請求項1記載の方法。
- 基板上に形成されたフォトレジストへ放射線を仕向けるレンズと、
前記レンズと前記フォトレジストとの間の界面と、
前記レンズと前記フォトレジストとの間の前記界面へ液体溶液を導入する入口と、
前記界面から前記液体溶液を排出する出口と、
前記界面中の前記液体溶液を振動させる少なくとも一つのメガソニック超音波トランスデューサーと、を備えることを特徴とするイマージョン式フォトリソグラフィ装置。 - 前記液体溶液は、メガソニック超音波リンス液、イマージョン露光液、脱イオン水、界面活性剤、ポリマーからなる群から選択されることを特徴とする請求項9記載のイマージョン式フォトリソグラフィ装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/995,653 US7732123B2 (en) | 2004-11-23 | 2004-11-23 | Immersion photolithography with megasonic rinse |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006148133A true JP2006148133A (ja) | 2006-06-08 |
JP4571067B2 JP4571067B2 (ja) | 2010-10-27 |
Family
ID=36461320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005337792A Active JP4571067B2 (ja) | 2004-11-23 | 2005-11-22 | メガソニック超音波リンスを使用するイマージョン式フォトリソグラフィ |
Country Status (6)
Country | Link |
---|---|
US (1) | US7732123B2 (ja) |
JP (1) | JP4571067B2 (ja) |
KR (1) | KR100733994B1 (ja) |
CN (1) | CN100432841C (ja) |
NL (1) | NL1030480C2 (ja) |
TW (1) | TWI267908B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012134512A (ja) * | 2004-06-21 | 2012-07-12 | Nikon Corp | 露光装置、及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070242248A1 (en) * | 2004-10-26 | 2007-10-18 | Nikon Corporation | Substrate processing method, exposure apparatus, and method for producing device |
CN101044594B (zh) * | 2004-10-26 | 2010-05-12 | 株式会社尼康 | 衬底处理方法、曝光装置及器件制造方法 |
KR101339887B1 (ko) * | 2004-12-06 | 2013-12-10 | 가부시키가이샤 니콘 | 메인터넌스 방법, 메인터넌스 기기, 노광 장치, 및디바이스 제조 방법 |
US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20060194142A1 (en) * | 2005-02-25 | 2006-08-31 | Benjamin Szu-Min Lin | Immersion lithography without using a topcoat |
US20060250588A1 (en) * | 2005-05-03 | 2006-11-09 | Stefan Brandl | Immersion exposure tool cleaning system and method |
WO2007007746A1 (ja) * | 2005-07-11 | 2007-01-18 | Nikon Corporation | 露光装置及びデバイス製造方法 |
WO2007135990A1 (ja) * | 2006-05-18 | 2007-11-29 | Nikon Corporation | 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 |
KR20090023335A (ko) * | 2006-05-22 | 2009-03-04 | 가부시키가이샤 니콘 | 노광 방법 및 장치, 메인터넌스 방법, 그리고 디바이스 제조 방법 |
KR20090023331A (ko) * | 2006-05-23 | 2009-03-04 | 가부시키가이샤 니콘 | 메인터넌스 방법, 노광 방법 및 장치, 그리고 디바이스 제조 방법 |
CN101390194B (zh) * | 2006-06-30 | 2011-04-20 | 株式会社尼康 | 维修方法、曝光方法及装置、以及元件制造方法 |
US20110094546A1 (en) * | 2009-10-23 | 2011-04-28 | John Valcore | System and method for wafer carrier vibration reduction |
NL2006272A (en) * | 2010-05-04 | 2011-11-07 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
KR20220101102A (ko) | 2019-11-18 | 2022-07-19 | 에이에스엠엘 네델란즈 비.브이. | 유체 핸들링 시스템, 방법 및 리소그래피 장치 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JPH06168866A (ja) * | 1992-11-27 | 1994-06-14 | Canon Inc | 液浸式投影露光装置 |
JP2004078217A (ja) * | 2002-08-12 | 2004-03-11 | Air Products & Chemicals Inc | 半導体デバイス製造の際の欠陥低減方法及び処理溶液 |
WO2004093130A2 (en) * | 2003-04-11 | 2004-10-28 | Nikon Corporation | Cleanup method for optics in immersion lithography |
JP2006148093A (ja) * | 2004-11-18 | 2006-06-08 | Internatl Business Mach Corp <Ibm> | 浸漬リソグラフィ・システムにおいて半導体基板を洗浄する方法及び装置 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
US5911837A (en) * | 1993-07-16 | 1999-06-15 | Legacy Systems, Inc. | Process for treatment of semiconductor wafers in a fluid |
JPH0739833A (ja) | 1993-07-29 | 1995-02-10 | Matsushita Electric Ind Co Ltd | 洗浄装置 |
JP3198899B2 (ja) * | 1995-11-30 | 2001-08-13 | アルプス電気株式会社 | ウエット処理方法 |
US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
WO1999027568A1 (fr) * | 1997-11-21 | 1999-06-03 | Nikon Corporation | Graveur de motifs a projection et procede de sensibilisation a projection |
US20010047810A1 (en) * | 1999-06-29 | 2001-12-06 | Jeff Farber | High rpm megasonic cleaning |
US6517665B1 (en) * | 2000-01-25 | 2003-02-11 | Sandia National Laboratories | Liga developer apparatus system |
JP2001357567A (ja) * | 2000-04-14 | 2001-12-26 | Tdk Corp | 光ディスク原盤の製造方法 |
WO2002101798A2 (en) * | 2001-06-12 | 2002-12-19 | Verteq, Inc. | Method of applying liquid to a megasonic apparatus for improved cleaning control |
CN1170208C (zh) * | 2001-06-21 | 2004-10-06 | 中国科学院长春光学精密机械与物理研究所 | 利用普通紫外光深刻层光刻的分离曝光工艺方法 |
US20030234029A1 (en) * | 2001-07-16 | 2003-12-25 | Semitool, Inc. | Cleaning and drying a substrate |
US7169280B2 (en) * | 2001-08-31 | 2007-01-30 | Semitool, Inc. | Apparatus and method for deposition of an electrophoretic emulsion |
JP4304988B2 (ja) | 2002-01-28 | 2009-07-29 | 三菱化学株式会社 | 半導体デバイス用基板の洗浄方法 |
JP2004134674A (ja) * | 2002-10-11 | 2004-04-30 | Toshiba Corp | 基板処理方法、加熱処理装置、パターン形成方法 |
US7110081B2 (en) * | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR20040058966A (ko) * | 2002-12-27 | 2004-07-05 | 주식회사 하이닉스반도체 | 이머젼 리소그라피 방법 |
US7029832B2 (en) * | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
EP2261742A3 (en) * | 2003-06-11 | 2011-05-25 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method. |
US7014966B2 (en) * | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
US7056646B1 (en) * | 2003-10-01 | 2006-06-06 | Advanced Micro Devices, Inc. | Use of base developers as immersion lithography fluid |
KR20050113462A (ko) * | 2004-05-29 | 2005-12-02 | 삼성전자주식회사 | 워터 이머전 리소그래피 설비 |
JP2006049757A (ja) * | 2004-08-09 | 2006-02-16 | Tokyo Electron Ltd | 基板処理方法 |
-
2004
- 2004-11-23 US US10/995,653 patent/US7732123B2/en not_active Expired - Fee Related
-
2005
- 2005-06-02 TW TW094118265A patent/TWI267908B/zh not_active IP Right Cessation
- 2005-06-10 CN CNB2005100753346A patent/CN100432841C/zh not_active Expired - Fee Related
- 2005-11-21 NL NL1030480A patent/NL1030480C2/nl active Search and Examination
- 2005-11-22 JP JP2005337792A patent/JP4571067B2/ja active Active
- 2005-11-23 KR KR1020050112164A patent/KR100733994B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JPH06168866A (ja) * | 1992-11-27 | 1994-06-14 | Canon Inc | 液浸式投影露光装置 |
JP2004078217A (ja) * | 2002-08-12 | 2004-03-11 | Air Products & Chemicals Inc | 半導体デバイス製造の際の欠陥低減方法及び処理溶液 |
WO2004093130A2 (en) * | 2003-04-11 | 2004-10-28 | Nikon Corporation | Cleanup method for optics in immersion lithography |
JP2006148093A (ja) * | 2004-11-18 | 2006-06-08 | Internatl Business Mach Corp <Ibm> | 浸漬リソグラフィ・システムにおいて半導体基板を洗浄する方法及び装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012134512A (ja) * | 2004-06-21 | 2012-07-12 | Nikon Corp | 露光装置、及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200618058A (en) | 2006-06-01 |
CN1779573A (zh) | 2006-05-31 |
KR100733994B1 (ko) | 2007-06-29 |
KR20060057517A (ko) | 2006-05-26 |
NL1030480C2 (nl) | 2008-04-25 |
CN100432841C (zh) | 2008-11-12 |
NL1030480A1 (nl) | 2006-05-24 |
TWI267908B (en) | 2006-12-01 |
US20060110689A1 (en) | 2006-05-25 |
JP4571067B2 (ja) | 2010-10-27 |
US7732123B2 (en) | 2010-06-08 |
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