NL1030480A1 - Immersiefotolithografie met megasonische spoeling. - Google Patents

Immersiefotolithografie met megasonische spoeling.

Info

Publication number
NL1030480A1
NL1030480A1 NL1030480A NL1030480A NL1030480A1 NL 1030480 A1 NL1030480 A1 NL 1030480A1 NL 1030480 A NL1030480 A NL 1030480A NL 1030480 A NL1030480 A NL 1030480A NL 1030480 A1 NL1030480 A1 NL 1030480A1
Authority
NL
Netherlands
Prior art keywords
megasonic
wash
immersion photolithography
photolithography
immersion
Prior art date
Application number
NL1030480A
Other languages
English (en)
Other versions
NL1030480C2 (nl
Inventor
Ching-Yu Chang
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of NL1030480A1 publication Critical patent/NL1030480A1/nl
Application granted granted Critical
Publication of NL1030480C2 publication Critical patent/NL1030480C2/nl

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
NL1030480A 2004-11-23 2005-11-21 Immersiefotolithografie met megasonische spoeling. NL1030480C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US99565304 2004-11-23
US10/995,653 US7732123B2 (en) 2004-11-23 2004-11-23 Immersion photolithography with megasonic rinse

Publications (2)

Publication Number Publication Date
NL1030480A1 true NL1030480A1 (nl) 2006-05-24
NL1030480C2 NL1030480C2 (nl) 2008-04-25

Family

ID=36461320

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1030480A NL1030480C2 (nl) 2004-11-23 2005-11-21 Immersiefotolithografie met megasonische spoeling.

Country Status (6)

Country Link
US (1) US7732123B2 (nl)
JP (1) JP4571067B2 (nl)
KR (1) KR100733994B1 (nl)
CN (1) CN100432841C (nl)
NL (1) NL1030480C2 (nl)
TW (1) TWI267908B (nl)

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EP3462241A1 (en) * 2004-06-21 2019-04-03 Nikon Corporation Exposure apparatus, exposure method and method for producing a device
CN101866113B (zh) * 2004-10-26 2013-04-24 株式会社尼康 衬底处理方法、曝光装置及器件制造方法
US20070242248A1 (en) * 2004-10-26 2007-10-18 Nikon Corporation Substrate processing method, exposure apparatus, and method for producing device
JP4784513B2 (ja) 2004-12-06 2011-10-05 株式会社ニコン メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法
US7880860B2 (en) * 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060194142A1 (en) * 2005-02-25 2006-08-31 Benjamin Szu-Min Lin Immersion lithography without using a topcoat
US20060250588A1 (en) * 2005-05-03 2006-11-09 Stefan Brandl Immersion exposure tool cleaning system and method
JP5353005B2 (ja) * 2005-07-11 2013-11-27 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
CN101410948B (zh) * 2006-05-18 2011-10-26 株式会社尼康 曝光方法及装置、维护方法、以及组件制造方法
EP2034514A4 (en) * 2006-05-22 2012-01-11 Nikon Corp EXPOSURE METHOD AND APPARATUS, MAINTENANCE METHOD, AND METHOD OF MANUFACTURING THE DEVICE THEREFOR
CN102156389A (zh) * 2006-05-23 2011-08-17 株式会社尼康 维修方法、曝光方法及装置、以及组件制造方法
KR20090033170A (ko) * 2006-06-30 2009-04-01 가부시키가이샤 니콘 메인터넌스 방법, 노광 방법 및 장치 및 디바이스 제조 방법
US20110094546A1 (en) * 2009-10-23 2011-04-28 John Valcore System and method for wafer carrier vibration reduction
NL2006272A (en) * 2010-05-04 2011-11-07 Asml Netherlands Bv A fluid handling structure, a lithographic apparatus and a device manufacturing method.

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US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
US5911837A (en) * 1993-07-16 1999-06-15 Legacy Systems, Inc. Process for treatment of semiconductor wafers in a fluid
JPH0739833A (ja) 1993-07-29 1995-02-10 Matsushita Electric Ind Co Ltd 洗浄装置
JP3198899B2 (ja) * 1995-11-30 2001-08-13 アルプス電気株式会社 ウエット処理方法
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
AU1175799A (en) * 1997-11-21 1999-06-15 Nikon Corporation Projection aligner and projection exposure method
US7129199B2 (en) 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
US20010047810A1 (en) * 1999-06-29 2001-12-06 Jeff Farber High rpm megasonic cleaning
US6517665B1 (en) * 2000-01-25 2003-02-11 Sandia National Laboratories Liga developer apparatus system
JP2001357567A (ja) * 2000-04-14 2001-12-26 Tdk Corp 光ディスク原盤の製造方法
KR20040028782A (ko) * 2001-06-12 2004-04-03 베르테크, 인코포레이티드 메가소닉 세정기 및 건조기 시스템
CN1170208C (zh) * 2001-06-21 2004-10-06 中国科学院长春光学精密机械与物理研究所 利用普通紫外光深刻层光刻的分离曝光工艺方法
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JP4304988B2 (ja) 2002-01-28 2009-07-29 三菱化学株式会社 半導体デバイス用基板の洗浄方法
JP2004134674A (ja) * 2002-10-11 2004-04-30 Toshiba Corp 基板処理方法、加熱処理装置、パターン形成方法
US7110081B2 (en) * 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20040058966A (ko) * 2002-12-27 2004-07-05 주식회사 하이닉스반도체 이머젼 리소그라피 방법
US7029832B2 (en) * 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
CN106444292A (zh) * 2003-04-11 2017-02-22 株式会社尼康 沉浸式光刻装置、清洗方法、器件制造方法及液体沉浸式光刻装置
US7684008B2 (en) * 2003-06-11 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7014966B2 (en) * 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
US7056646B1 (en) * 2003-10-01 2006-06-06 Advanced Micro Devices, Inc. Use of base developers as immersion lithography fluid
KR20050113462A (ko) * 2004-05-29 2005-12-02 삼성전자주식회사 워터 이머전 리소그래피 설비
JP2006049757A (ja) * 2004-08-09 2006-02-16 Tokyo Electron Ltd 基板処理方法
US7362412B2 (en) * 2004-11-18 2008-04-22 International Business Machines Corporation Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system

Also Published As

Publication number Publication date
US20060110689A1 (en) 2006-05-25
NL1030480C2 (nl) 2008-04-25
JP2006148133A (ja) 2006-06-08
CN100432841C (zh) 2008-11-12
KR20060057517A (ko) 2006-05-26
TWI267908B (en) 2006-12-01
TW200618058A (en) 2006-06-01
JP4571067B2 (ja) 2010-10-27
CN1779573A (zh) 2006-05-31
KR100733994B1 (ko) 2007-06-29
US7732123B2 (en) 2010-06-08

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