JP2006059481A5 - - Google Patents

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Publication number
JP2006059481A5
JP2006059481A5 JP2004241991A JP2004241991A JP2006059481A5 JP 2006059481 A5 JP2006059481 A5 JP 2006059481A5 JP 2004241991 A JP2004241991 A JP 2004241991A JP 2004241991 A JP2004241991 A JP 2004241991A JP 2006059481 A5 JP2006059481 A5 JP 2006059481A5
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JP
Japan
Prior art keywords
word line
memory cell
memory device
dummy word
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004241991A
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English (en)
Japanese (ja)
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JP2006059481A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004241991A priority Critical patent/JP2006059481A/ja
Priority claimed from JP2004241991A external-priority patent/JP2006059481A/ja
Priority to US11/180,659 priority patent/US7301815B2/en
Publication of JP2006059481A publication Critical patent/JP2006059481A/ja
Publication of JP2006059481A5 publication Critical patent/JP2006059481A5/ja
Priority to US11/976,299 priority patent/US20080055983A1/en
Pending legal-status Critical Current

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JP2004241991A 2004-08-23 2004-08-23 半導体記憶装置 Pending JP2006059481A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004241991A JP2006059481A (ja) 2004-08-23 2004-08-23 半導体記憶装置
US11/180,659 US7301815B2 (en) 2004-08-23 2005-07-14 Semiconductor memory device comprising controllable threshould voltage dummy memory cells
US11/976,299 US20080055983A1 (en) 2004-08-23 2007-10-23 Semiconductor memory device comprising controllable threshold voltage dummy memory cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004241991A JP2006059481A (ja) 2004-08-23 2004-08-23 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2006059481A JP2006059481A (ja) 2006-03-02
JP2006059481A5 true JP2006059481A5 (cg-RX-API-DMAC7.html) 2007-04-12

Family

ID=35909456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004241991A Pending JP2006059481A (ja) 2004-08-23 2004-08-23 半導体記憶装置

Country Status (2)

Country Link
US (2) US7301815B2 (cg-RX-API-DMAC7.html)
JP (1) JP2006059481A (cg-RX-API-DMAC7.html)

Families Citing this family (40)

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KR100697285B1 (ko) * 2005-05-11 2007-03-20 삼성전자주식회사 워드라인과 선택라인 사이에 보호라인을 가지는 낸드플래시 메모리 장치
JP4960018B2 (ja) 2006-05-31 2012-06-27 株式会社東芝 不揮発性半導体メモリ
JP4952137B2 (ja) 2006-08-17 2012-06-13 富士通セミコンダクター株式会社 半導体メモリおよびシステム
US7586157B2 (en) * 2006-10-17 2009-09-08 Sandisk Corporation Non-volatile memory with dual voltage select gate structure
US7616490B2 (en) * 2006-10-17 2009-11-10 Sandisk Corporation Programming non-volatile memory with dual voltage select gate structure
US7691710B2 (en) * 2006-10-17 2010-04-06 Sandisk Corporation Fabricating non-volatile memory with dual voltage select gate structure
US7508703B2 (en) * 2006-11-13 2009-03-24 Sandisk Corporation Non-volatile memory with boost structures
US7696035B2 (en) * 2006-11-13 2010-04-13 Sandisk Corporation Method for fabricating non-volatile memory with boost structures
US7508710B2 (en) * 2006-11-13 2009-03-24 Sandisk Corporation Operating non-volatile memory with boost structures
JP2008146771A (ja) * 2006-12-12 2008-06-26 Toshiba Corp 半導体記憶装置
US20080232169A1 (en) * 2007-03-20 2008-09-25 Atmel Corporation Nand-like memory array employing high-density nor-like memory devices
KR100854914B1 (ko) 2007-04-06 2008-08-27 주식회사 하이닉스반도체 플래시 메모리 장치 및 이의 동작 방법
KR100897603B1 (ko) * 2007-06-20 2009-05-14 삼성전자주식회사 반도체 메모리 장치
US7808826B2 (en) * 2007-06-25 2010-10-05 Sandisk Corporation Non-volatile storage with individually controllable shield plates between storage elements
US7636260B2 (en) * 2007-06-25 2009-12-22 Sandisk Corporation Method for operating non-volatile storage with individually controllable shield plates between storage elements
US7781286B2 (en) * 2007-06-25 2010-08-24 Sandisk Corporation Method for fabricating non-volatile storage with individually controllable shield plates between storage elements
JP2009026369A (ja) * 2007-07-18 2009-02-05 Toshiba Corp 半導体記憶装置
KR101291667B1 (ko) * 2007-08-20 2013-08-01 삼성전자주식회사 불휘발성 메모리 장치 및 그 독출 방법
JP2009163782A (ja) * 2007-12-13 2009-07-23 Toshiba Corp 半導体記憶装置
US7872917B2 (en) * 2007-12-25 2011-01-18 Samsung Electronics Co., Ltd. Non-volatile semiconductor memory device and memory system including the same
JP2009193631A (ja) * 2008-02-14 2009-08-27 Toshiba Corp 不揮発性半導体記憶装置
KR101360136B1 (ko) 2008-04-18 2014-02-10 삼성전자주식회사 플래시 메모리 장치 및 그것의 동작 방법, 그리고 그것을포함하는 메모리 시스템
US7949821B2 (en) 2008-06-12 2011-05-24 Micron Technology, Inc. Method of storing data on a flash memory device
JP2009301691A (ja) * 2008-06-17 2009-12-24 Renesas Technology Corp 不揮発性半導体記憶装置
KR101478149B1 (ko) * 2008-10-20 2015-01-05 삼성전자주식회사 더미 트랜지스터를 갖는 플래시 메모리 장치
JP5259481B2 (ja) * 2009-04-14 2013-08-07 株式会社東芝 不揮発性半導体記憶装置
JP4987927B2 (ja) * 2009-09-24 2012-08-01 株式会社東芝 半導体記憶装置
US20140192598A1 (en) * 2012-06-04 2014-07-10 Kabushiki Kaisha Toshiba Semiconductor memory device
KR102000634B1 (ko) 2012-06-07 2019-07-16 삼성전자주식회사 비휘발성 메모리 장치 및 그것의 소거 방법
US8885411B2 (en) 2013-03-15 2014-11-11 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
KR20150004215A (ko) * 2013-07-02 2015-01-12 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그것의 동작 방법
JP2015097245A (ja) * 2013-11-15 2015-05-21 株式会社東芝 不揮発性半導体記憶装置、及びメモリシステム
KR102345597B1 (ko) * 2015-06-30 2022-01-03 삼성전자주식회사 더미 워드 라인을 갖는 3차원 플래시 메모리 장치
KR102444238B1 (ko) 2016-02-26 2022-09-16 삼성전자주식회사 메모리 장치의 프로그램 방법 및 이를 적용하는 메모리 시스템
KR102673490B1 (ko) 2016-11-28 2024-06-11 삼성전자주식회사 부분 읽기 동작을 수행하는 불휘발성 메모리 장치 및 그것의 읽기 방법
JP2018156702A (ja) 2017-03-16 2018-10-04 東芝メモリ株式会社 半導体記憶装置及びメモリシステム
JP2019161009A (ja) * 2018-03-13 2019-09-19 東芝メモリ株式会社 記憶装置
KR101927667B1 (ko) 2018-03-15 2018-12-10 한국과학기술원 단일 사건 현상과 누적 이온화 현상에 강인한 내방사선 단위 모스펫
CN113409858B (zh) * 2019-03-26 2022-07-05 长江存储科技有限责任公司 3d nand存储器及其抑制顶层存储层编程串扰的方法
US12133389B2 (en) * 2020-04-20 2024-10-29 SK Hynix Inc. Semiconductor memory device including pass transistors with variable sizes

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JPS6390096A (ja) * 1986-10-01 1988-04-20 Nec Corp 半導体記憶装置
US5406516A (en) * 1992-01-17 1995-04-11 Sharp Kabushiki Kaisha Semiconductor memory device
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JP4058219B2 (ja) 1999-09-17 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路
JP4005895B2 (ja) * 2002-09-30 2007-11-14 株式会社東芝 不揮発性半導体メモリ装置
JP4398195B2 (ja) * 2003-08-08 2010-01-13 パナソニック株式会社 半導体記憶装置
KR100506941B1 (ko) * 2003-08-19 2005-08-05 삼성전자주식회사 더미 셀들을 갖는 플래쉬 메모리소자 및 그것의 소거방법들
JP2005085903A (ja) * 2003-09-05 2005-03-31 Renesas Technology Corp 半導体装置およびその製造方法
JP4398750B2 (ja) * 2004-02-17 2010-01-13 株式会社東芝 Ｎａｎｄ型フラッシュメモリ

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