JP2006049846A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2006049846A JP2006049846A JP2005185872A JP2005185872A JP2006049846A JP 2006049846 A JP2006049846 A JP 2006049846A JP 2005185872 A JP2005185872 A JP 2005185872A JP 2005185872 A JP2005185872 A JP 2005185872A JP 2006049846 A JP2006049846 A JP 2006049846A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0292—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using a specific configuration of the conducting means connecting the protective devices, e.g. ESD buses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Abstract
【解決手段】 電源電圧が供給される電源パッド2及び3と、電源パッド2及び3に夫々接続される電源配線4及び5と、信号を入出力する入出力パッドP1、P2、・・・、P14と、該入出力パッドP1等に電気的に接続され、且つ電源配線4及び5を夫々介して電源パッド2及び3に電気的に接続される静電保護素子Q1、Q2、・・・、Q14と、信号配線R1等を介して入出力パッドP1等と電気的に接続される内部回路6と、を備えたICチップ1において、静電保護素子Q1等並びに電源配線4及び5を、入出力パッドP1等の外側に配置する。
【選択図】 図1
Description
上記の説明においては、2層構造または3層構造を有するICチップを例示したが、本発明は、n層(nは2以上の整数)の金属配線層を備えた多層配線構造を有するICチップに、広く適用可能である。尚、4層以上の場合も、上層(半導体基板10の反対側)に向かえば向かうほど、金属配線層の厚さは増大し、(第n層のシート抵抗値)<(第(n−1)層のシート抵抗値)< ・・・ <(第2層のシート抵抗値)<(第1層のシート抵抗値)が成立している。
2 負側の電源パッド
3 正側の電源パッド
4 負側の電源配線
5 正側の電源配線
6 内部回路
P1、P2、・・・、P14 入出力パッド
Q1、Q2、・・・、Q14、Qa、Qb 静電保護素子
R1 信号配線
10 シリコン基板
11 P型ウェル
12 N型ウェル
13 N型拡散層
15 P型拡散層
17、18 保護ダイオード
21、22、60、61、62、63 金属膜
30 絶縁膜
40、64、65 コンタクトホール
117a、118a MOSトランジスタ
Claims (7)
- 電源電圧が供給される電源パッドと、
該電源パッドに電気的に接続される電源配線と、
信号を入力または信号を出力する入出力パッドと、
該入出力パッドに電気的に接続され、且つ前記電源配線を介して前記電源パッドに電気的に接続される静電保護素子と、
信号配線を介して前記入出力パッドと電気的に接続される内部回路と、
を備えた半導体装置において、
当該半導体装置の外側から内側に向かって、前記静電保護素子、前記入出力パッド、前記内部回路の順に配置されている
ことを特徴とする半導体装置。 - 前記電源配線は、前記入出力パッドより外側に配置されている
ことを特徴とする請求項1に記載の半導体装置。 - 前記半導体装置はn層(n;2以上の整数)の金属配線層を備えた多層配線構造を有し、前記電源配線は、前記n層の金属配線層のうち、最もシート抵抗値が小さい金属配線層を少なくとも用いて形成されている
ことを特徴とする請求項2に記載の半導体装置。 - 前記半導体装置はn層(n;2以上の整数)の金属配線層を備えた多層配線構造を有し、前記電源配線は、最下層以外の金属配線層を用いて形成されている
ことを特徴とする請求項2に記載の半導体装置。 - 前記半導体装置はn層(n;2以上の整数)の金属配線層を備えた多層配線構造を有し、前記電源配線は、複数の金属配線層を用いて形成されている
ことを特徴とする請求項2〜請求項4の何れかに記載の半導体装置。 - 前記電源パッドは、第1の電源電圧が供給される第1の電源パッドと、前記第1の電源電圧と異なる第2の電源電圧が供給される第2の電源パッドとから成り、
前記電源配線は、前記第1の電源パッドに電気的に接続される第1の電源配線と、前記第2の電源パッドに電気的に接続される第2の電源配線とから成る
ことを特徴とする請求項1〜請求項5の何れかに記載の半導体装置。 - 請求項1〜請求項6の何れかに記載の半導体装置を備えた
ことを特徴とする電気機器。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005185872A JP5008840B2 (ja) | 2004-07-02 | 2005-06-27 | 半導体装置 |
TW094122417A TWI358791B (en) | 2004-07-02 | 2005-07-01 | Semiconductor device |
US11/173,615 US9812408B2 (en) | 2004-07-02 | 2005-07-01 | Semiconductor device with electrostatic discharge protection device near the edge of the chip |
CN2010105015594A CN101950744B (zh) | 2004-07-02 | 2005-07-04 | 半导体器件 |
CN2005100821748A CN1716597B (zh) | 2004-07-02 | 2005-07-04 | 半导体器件 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004196864 | 2004-07-02 | ||
JP2004196864 | 2004-07-02 | ||
JP2005185872A JP5008840B2 (ja) | 2004-07-02 | 2005-06-27 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006049846A true JP2006049846A (ja) | 2006-02-16 |
JP5008840B2 JP5008840B2 (ja) | 2012-08-22 |
Family
ID=35513004
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005185872A Active JP5008840B2 (ja) | 2004-07-02 | 2005-06-27 | 半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9812408B2 (ja) |
JP (1) | JP5008840B2 (ja) |
CN (2) | CN1716597B (ja) |
TW (1) | TWI358791B (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009176773A (ja) * | 2008-01-21 | 2009-08-06 | Mitsumi Electric Co Ltd | 半導体装置 |
KR20090089805A (ko) * | 2008-02-19 | 2009-08-24 | 세이코 인스트루 가부시키가이샤 | 반도체 장치 |
JP2016021522A (ja) * | 2014-07-15 | 2016-02-04 | ラピスセミコンダクタ株式会社 | 半導体装置 |
US9947651B2 (en) | 2008-12-19 | 2018-04-17 | Renesas Electronics Corporation | Semiconductor integrated circuit device having an NMOS with a high resistance drain terminal |
JP2020035773A (ja) * | 2018-08-27 | 2020-03-05 | 株式会社東海理化電機製作所 | 半導体集積回路 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4846244B2 (ja) * | 2005-02-15 | 2011-12-28 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10128229B1 (en) | 2017-11-13 | 2018-11-13 | Micron Technology, Inc. | Semiconductor devices with package-level configurability |
KR20190133964A (ko) * | 2018-05-24 | 2019-12-04 | 삼성전자주식회사 | 반도체 장치 및 이를 포함하는 반도체 패키지 |
US10483241B1 (en) | 2018-06-27 | 2019-11-19 | Micron Technology, Inc. | Semiconductor devices with through silicon vias and package-level configurability |
US10867991B2 (en) * | 2018-12-27 | 2020-12-15 | Micron Technology, Inc. | Semiconductor devices with package-level configurability |
US11621238B2 (en) * | 2021-04-20 | 2023-04-04 | Nanya Technology Corporation | Semiconductor device with redistribution pattern and method for fabricating the same |
Citations (5)
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JPH06350082A (ja) * | 1993-06-02 | 1994-12-22 | Rohm Co Ltd | 入力保護回路およびic |
JPH09129738A (ja) * | 1995-10-30 | 1997-05-16 | Hitachi Ltd | 配線配置設計方法 |
JPH09199670A (ja) * | 1996-01-17 | 1997-07-31 | Nec Ic Microcomput Syst Ltd | 半導体装置 |
JP2003031669A (ja) * | 2001-07-13 | 2003-01-31 | Ricoh Co Ltd | 半導体装置 |
JP2004056087A (ja) * | 2002-05-29 | 2004-02-19 | Sanyo Electric Co Ltd | 半導体集積回路装置 |
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JP2004111796A (ja) * | 2002-09-20 | 2004-04-08 | Hitachi Ltd | 半導体装置 |
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-
2005
- 2005-06-27 JP JP2005185872A patent/JP5008840B2/ja active Active
- 2005-07-01 US US11/173,615 patent/US9812408B2/en active Active
- 2005-07-01 TW TW094122417A patent/TWI358791B/zh active
- 2005-07-04 CN CN2005100821748A patent/CN1716597B/zh active Active
- 2005-07-04 CN CN2010105015594A patent/CN101950744B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH06350082A (ja) * | 1993-06-02 | 1994-12-22 | Rohm Co Ltd | 入力保護回路およびic |
JPH09129738A (ja) * | 1995-10-30 | 1997-05-16 | Hitachi Ltd | 配線配置設計方法 |
JPH09199670A (ja) * | 1996-01-17 | 1997-07-31 | Nec Ic Microcomput Syst Ltd | 半導体装置 |
JP2003031669A (ja) * | 2001-07-13 | 2003-01-31 | Ricoh Co Ltd | 半導体装置 |
JP2004056087A (ja) * | 2002-05-29 | 2004-02-19 | Sanyo Electric Co Ltd | 半導体集積回路装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009176773A (ja) * | 2008-01-21 | 2009-08-06 | Mitsumi Electric Co Ltd | 半導体装置 |
KR20090089805A (ko) * | 2008-02-19 | 2009-08-24 | 세이코 인스트루 가부시키가이샤 | 반도체 장치 |
KR101626613B1 (ko) * | 2008-02-19 | 2016-06-01 | 에스아이아이 세미컨덕터 가부시키가이샤 | 반도체 장치 |
US9947651B2 (en) | 2008-12-19 | 2018-04-17 | Renesas Electronics Corporation | Semiconductor integrated circuit device having an NMOS with a high resistance drain terminal |
JP2016021522A (ja) * | 2014-07-15 | 2016-02-04 | ラピスセミコンダクタ株式会社 | 半導体装置 |
JP2020035773A (ja) * | 2018-08-27 | 2020-03-05 | 株式会社東海理化電機製作所 | 半導体集積回路 |
JP7052972B2 (ja) | 2018-08-27 | 2022-04-12 | 株式会社東海理化電機製作所 | 半導体集積回路 |
Also Published As
Publication number | Publication date |
---|---|
JP5008840B2 (ja) | 2012-08-22 |
CN101950744B (zh) | 2012-09-05 |
CN101950744A (zh) | 2011-01-19 |
US9812408B2 (en) | 2017-11-07 |
US20060001101A1 (en) | 2006-01-05 |
CN1716597A (zh) | 2006-01-04 |
CN1716597B (zh) | 2010-12-08 |
TW200603341A (en) | 2006-01-16 |
TWI358791B (en) | 2012-02-21 |
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