JP2006024731A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2006024731A JP2006024731A JP2004201354A JP2004201354A JP2006024731A JP 2006024731 A JP2006024731 A JP 2006024731A JP 2004201354 A JP2004201354 A JP 2004201354A JP 2004201354 A JP2004201354 A JP 2004201354A JP 2006024731 A JP2006024731 A JP 2006024731A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 230000010355 oscillation Effects 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000010586 diagram Methods 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- OQCFWECOQNPQCG-UHFFFAOYSA-N 1,3,4,8-tetrahydropyrimido[4,5-c]oxazin-7-one Chemical compound C1CONC2=C1C=NC(=O)N2 OQCFWECOQNPQCG-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
- H01L27/0808—Varactor diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
- H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1296—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the feedback circuit comprising a transformer
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
【解決手段】バイポーラトランジスタ(BPT)を形成する半導体層のうちベース層とコレクタ層とによって形成されるPN接合を、単一のコレクタ層8に複数のベース層9を形成することによって複数個のPN接合を形成すると共に、各PN接合を上記コレクタ層を共通として逆直列接続し、各ベース層間に発生する容量が共通のコレクタ層に印加する電圧に応じて変化するようにした可変容量素子31を同一半導体基板6上に形成されたBPT10と組み合わせて接続することにより電圧制御発振回路を形成する構成とする。
【選択図】図1
Description
また、図3(B)は図3(A)において破線で囲んだ可変容量素子の構成を示す平面図、図3(C)は図3(B)におけるB−B線に沿った側面構造を示す断面図、図3(D)は可変容量素子の小信号等価回路である。
15は発振回路の出力端子である。
以下、この発明の実施の形態1を図にもとづいて説明する。図1(A)は実施の形態1における可変容量素子の構成を示す平面図、図1(B)は図1(A)のA−A線に沿った側面構造を示す断面図、図1(C)は可変容量素子の小信号等価回路、図1(D)は実施の形態1の可変容量素子とNPN形バイポーラトランジスタとを同一半導体基板上に形成して組み合わせることにより形成された電圧制御発振回路の一例を示す。
更に、半導体基板6上には図1(D)に示す他の回路要素が設けられ、電圧制御発振回路が形成されている。
8 コレクタ層、 9 ベース層。
Claims (3)
- バイポーラトランジスタを形成する半導体層のうちベース層とコレクタ層とによって形成されるPN接合を、単一のコレクタ層に複数のベース層を形成することによって複数個のPN接合を形成すると共に、各PN接合を上記コレクタ層を共通として逆直列接続し、上記各ベース層間に発生する容量が共通のコレクタ層に印加する電圧に応じて変化するようにした可変容量素子を同一半導体基板上に形成されたバイポーラトランジスタと組み合わせて接続することにより電圧制御発振回路を形成することを特徴とする半導体装置。
- 上記可変容量素子は、単一のコレクタ層上に複数のベース層を電気的に分離して形成したことを特徴とする請求項1記載の半導体装置。
- 上記可変容量素子は、複数のベース層のうち所定のベース層に接続された電極と、上記所定のベース層の両側に位置するベース層に接続された他の電極とを有し、上記両電極がそれぞれくし型の電極を構成するようにしたことを特徴とする請求項1または請求項2記載の半導体装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004201354A JP4857531B2 (ja) | 2004-07-08 | 2004-07-08 | 半導体装置 |
DE102005030658.6A DE102005030658B4 (de) | 2004-07-08 | 2005-06-30 | Halbleitervorrichtung mit einer verbesserten spannungsgesteuerten Oszillatorschaltung |
TW094122128A TWI289933B (en) | 2004-07-08 | 2005-06-30 | Semiconductor device |
KR1020050060588A KR100659386B1 (ko) | 2004-07-08 | 2005-07-06 | 바이폴러 트랜지스터를 이용한 발진회로 |
FR0507217A FR2872959B1 (fr) | 2004-07-08 | 2005-07-06 | Dispositif a semiconducteur ayant un circuit oscillateur commande par tension perfectionne |
US11/175,378 US7323763B2 (en) | 2004-07-08 | 2005-07-07 | Semiconductor device having an improved voltage controlled oscillator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004201354A JP4857531B2 (ja) | 2004-07-08 | 2004-07-08 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006024731A true JP2006024731A (ja) | 2006-01-26 |
JP4857531B2 JP4857531B2 (ja) | 2012-01-18 |
Family
ID=35517121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004201354A Expired - Fee Related JP4857531B2 (ja) | 2004-07-08 | 2004-07-08 | 半導体装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7323763B2 (ja) |
JP (1) | JP4857531B2 (ja) |
KR (1) | KR100659386B1 (ja) |
DE (1) | DE102005030658B4 (ja) |
FR (1) | FR2872959B1 (ja) |
TW (1) | TWI289933B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150325573A1 (en) | 2014-05-08 | 2015-11-12 | Triquint Semiconductor, Inc. | Dual stack varactor |
US10109623B2 (en) | 2014-05-08 | 2018-10-23 | Qorvo Us, Inc. | Dual-series varactor EPI |
US9484471B2 (en) * | 2014-09-12 | 2016-11-01 | Qorvo Us, Inc. | Compound varactor |
US9590669B2 (en) | 2015-05-08 | 2017-03-07 | Qorvo Us, Inc. | Single varactor stack with low second-harmonic generation |
US10158030B2 (en) | 2017-02-13 | 2018-12-18 | Qualcomm Incorporated | CMOS and bipolar device integration including a tunable capacitor |
CN113271078B (zh) * | 2021-05-19 | 2023-10-24 | 上海鸿晔电子科技股份有限公司 | 一种滤波器的制造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58210668A (ja) * | 1982-05-31 | 1983-12-07 | Matsushita Electric Ind Co Ltd | 半導体集積回路 |
JPH02206203A (ja) * | 1989-02-03 | 1990-08-16 | Fujitsu Ltd | 発振器 |
JPH03126062A (ja) * | 1989-10-12 | 1991-05-29 | Ricoh Co Ltd | 画像形成装置および画像形成方法 |
JPH07183767A (ja) * | 1993-12-22 | 1995-07-21 | Sanyo Electric Co Ltd | 可変容量素子およびラジオ受信機 |
JPH08264713A (ja) * | 1995-03-17 | 1996-10-11 | Toko Inc | 可変容量ダイオード装置 |
JP2002305310A (ja) * | 2001-02-05 | 2002-10-18 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2005101295A (ja) * | 2003-09-25 | 2005-04-14 | Matsushita Electric Ind Co Ltd | 差動型電圧制御発振器 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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DE1803883A1 (de) * | 1968-10-18 | 1970-05-27 | Siemens Ag | Durch mindestens zwei abstimmbare Kapazitaetsdioden gesteuerte elektrische Anordnung |
US3582823A (en) * | 1969-02-24 | 1971-06-01 | Fairchild Camera Instr Co | Voltage controlled oscillator in which capacitive diodes become resistive during portions of each cycle |
FR2567325B1 (fr) | 1984-07-03 | 1986-11-14 | Thomson Csf | Element a capacite variable, commandable par une tension continue |
US5220194A (en) * | 1989-11-27 | 1993-06-15 | Motorola, Inc. | Tunable capacitor with RF-DC isolation |
US5747857A (en) * | 1991-03-13 | 1998-05-05 | Matsushita Electric Industrial Co., Ltd. | Electronic components having high-frequency elements and methods of manufacture therefor |
SE515783C2 (sv) * | 1997-09-11 | 2001-10-08 | Ericsson Telefon Ab L M | Elektriska anordningar jämte förfarande för deras tillverkning |
JP2000124473A (ja) | 1998-10-15 | 2000-04-28 | Nippon Dempa Kogyo Co Ltd | 電圧可変容量を具備した集積回路素子及びこれを用い た電圧制御発振器 |
EP1080490B1 (en) * | 1999-03-10 | 2007-12-26 | Nxp B.V. | Method of manufacturing a semiconductor device comprising a bipolar transistor and a capacitor |
US6278158B1 (en) | 1999-12-29 | 2001-08-21 | Motorola, Inc. | Voltage variable capacitor with improved C-V linearity |
JP2001308106A (ja) * | 2000-04-27 | 2001-11-02 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2002198733A (ja) * | 2000-12-27 | 2002-07-12 | Toshiba Corp | 発振回路 |
US6642607B2 (en) * | 2001-02-05 | 2003-11-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
JP3631464B2 (ja) * | 2001-12-27 | 2005-03-23 | 株式会社東芝 | 半導体装置 |
DE10222764B4 (de) * | 2002-05-15 | 2011-06-01 | Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik | Halbleitervaraktor und damit aufgebauter Oszillator |
JP2004241624A (ja) * | 2003-02-06 | 2004-08-26 | Mitsubishi Electric Corp | 電圧制御発振回路 |
-
2004
- 2004-07-08 JP JP2004201354A patent/JP4857531B2/ja not_active Expired - Fee Related
-
2005
- 2005-06-30 TW TW094122128A patent/TWI289933B/zh not_active IP Right Cessation
- 2005-06-30 DE DE102005030658.6A patent/DE102005030658B4/de not_active Expired - Fee Related
- 2005-07-06 FR FR0507217A patent/FR2872959B1/fr not_active Expired - Fee Related
- 2005-07-06 KR KR1020050060588A patent/KR100659386B1/ko active IP Right Grant
- 2005-07-07 US US11/175,378 patent/US7323763B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58210668A (ja) * | 1982-05-31 | 1983-12-07 | Matsushita Electric Ind Co Ltd | 半導体集積回路 |
JPH02206203A (ja) * | 1989-02-03 | 1990-08-16 | Fujitsu Ltd | 発振器 |
JPH03126062A (ja) * | 1989-10-12 | 1991-05-29 | Ricoh Co Ltd | 画像形成装置および画像形成方法 |
JPH07183767A (ja) * | 1993-12-22 | 1995-07-21 | Sanyo Electric Co Ltd | 可変容量素子およびラジオ受信機 |
JPH08264713A (ja) * | 1995-03-17 | 1996-10-11 | Toko Inc | 可変容量ダイオード装置 |
JP2002305310A (ja) * | 2001-02-05 | 2002-10-18 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2005101295A (ja) * | 2003-09-25 | 2005-04-14 | Matsushita Electric Ind Co Ltd | 差動型電圧制御発振器 |
Also Published As
Publication number | Publication date |
---|---|
DE102005030658B4 (de) | 2015-01-15 |
TW200608583A (en) | 2006-03-01 |
US7323763B2 (en) | 2008-01-29 |
KR100659386B1 (ko) | 2006-12-19 |
FR2872959A1 (fr) | 2006-01-13 |
FR2872959B1 (fr) | 2008-12-26 |
US20060006418A1 (en) | 2006-01-12 |
JP4857531B2 (ja) | 2012-01-18 |
DE102005030658A1 (de) | 2006-02-09 |
KR20060049874A (ko) | 2006-05-19 |
TWI289933B (en) | 2007-11-11 |
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