JP2006019682A - 薄膜トランジスタ及びその製造方法、並びに薄膜トランジスタを備えた平板表示装置及びその平板表示装置の製造方法 - Google Patents
薄膜トランジスタ及びその製造方法、並びに薄膜トランジスタを備えた平板表示装置及びその平板表示装置の製造方法 Download PDFInfo
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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Abstract
【解決手段】 チャンネル領域、ソース、及びドレイン領域を有する活性層と、前記チャンネル領域に信号を印加するゲート電極と、前記ソース及びドレイン領域にそれぞれ接続し、Ti、Ti合金、Ta、及びTa合金のうち少なくとも一つを含むソース及びドレイン電極と、前記ソース及びドレイン電極と前記活性層との間に介在され、シリコンナイトライドを含む絶縁膜と、を含むことを特徴とする薄膜トランジスタ。これにより、ソース/ドレイン電極の配線抵抗を低め、活性層からの汚染を防止し、画素電極との接触抵抗特性が改善され、活性層への水素供給を円滑にして移動度、オンカレント特性、スレショルド電圧特性などに優れたTFT及びそれを備えた平板表示装置が得られる。
【選択図】 図2
Description
110 活性層
110a ソース/ドレイン領域
110b チャンネル領域
105 バッファ層
115 ゲート絶縁膜
120 ゲート電極
122 ソース/ドレインコンタクトホール
125 層間絶縁膜
131 ソース/ドレイン電極
131a 第1金属膜パターン
131c 第2金属膜パターン
131d 第3金属膜パターン
Claims (22)
- チャンネル領域、ソース、及びドレイン領域を有する活性層と、
前記チャンネル領域に信号を印加するゲート電極と、
前記ソース及びドレイン領域にそれぞれ接続し、Ti、Ti合金、Ta、及びTa合金のうち少なくとも一つを含むソース及びドレイン電極と、
前記ソース及びドレイン電極と前記活性層との間に介在され、シリコンナイトライドを含む絶縁膜と、
を含むことを特徴とする薄膜トランジスタ。 - 前記ソース及びドレイン電極は、前記活性層の方向から順次に積層された第1金属膜パターン、第2金属膜パターン、及び第3金属膜パターンを含むことを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記第1金属膜パターンは、Cr、Cr合金、Mo、及びMo合金のうち少なくとも一つを含むことを特徴とする請求項2に記載の薄膜トランジスタ。
- 前記第2金属膜パターンは、Al、AlSi、AlNd、及びAlCuのうち少なくとも一つを含むことを特徴とする請求項2に記載の薄膜トランジスタ。
- 前記第3金属膜パターンは、Ti、Ti合金、Ta、及びTa合金のうち少なくとも一つを含むことを特徴とする請求項2に記載の薄膜トランジスタ。
- 前記第1金属膜パターンは、Ti、Ti合金、Ta、及びTa合金のうち少なくとも一つを含むことを特徴とする請求項2に記載の薄膜トランジスタ。
- 前記第1金属膜パターンと前記第2金属膜パターンとの間に位置する保護膜パターンをさらに含むことを特徴とする請求項3に記載の薄膜トランジスタ。
- 前記保護膜パターンは、Ti、Ti合金、Ta、及びTa合金のうち少なくとも一つを含むことを特徴とする請求項7に記載の薄膜トランジスタ。
- 前記絶縁膜は、前記ゲート電極を覆うように備えられることを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記絶縁膜は、前記ゲート電極と前記活性層との間に介在されたことを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記活性層は、多結晶シリコンよりなることを特徴とする請求項1に記載の薄膜トランジスタ。
- 請求項1に記載の薄膜トランジスタを備えたことを特徴とする平板表示装置。
- 基板上に、ゲート絶縁膜により互いに絶縁された活性層及びゲート電極を形成し、前記活性層及びゲート電極を覆うように層間絶縁膜を形成するが、前記ゲート絶縁膜及び層間絶縁膜のうち少なくとも一つにシリコンナイトライドが含まれるようにする段階と、
前記基板を熱処理する段階と、
前記ゲート絶縁膜及び層間絶縁膜のうち少なくとも一つにソース及びドレインコンタクトホールを形成する段階と、
前記層間絶縁膜上に位置し、前記ソース及びドレインコンタクトホールを通じて前記活性層に接し、Ti、Ti合金、Ta、及びTa合金のうち少なくとも一つを含むソース及びドレイン電極を形成する段階と、
を含むことを特徴とする薄膜トランジスタの製造方法。 - 前記ソース及びドレイン電極を形成する段階は、
前記層間絶縁膜上に位置し、前記ソース及びドレインコンタクトホールを通じて前記活性層に接するように第1金属膜パターン、第2金属膜パターン、及び第3金属膜パターンを順次に形成することを特徴とする請求項13に記載の薄膜トランジスタの製造方法。 - 前記ソース及びドレイン電極を形成する段階は、
前記ソース及びドレインコンタクトホールを通じて露出された前記活性層を含む基板の全面に第1金属膜を積層する段階と、
前記第1金属膜をパターニングして第1金属膜パターンを形成する段階と、
前記第1金属膜パターン上に第2金属膜及び第3金属膜を順次に積層する段階と、
前記第2金属膜と前記第3金属膜とをパターニングして前記第2金属膜パターンと前記第3金属膜パターンとを形成する段階と、
を含むことを特徴とする請求項14に記載の薄膜トランジスタの製造方法。 - 前記ソース及びドレイン電極を形成する段階は、
前記ソース及びドレインコンタクトホールを通じて露出された前記活性層を含む基板の全面に第1金属膜、第2金属膜、及び第3金属膜を順次に積層する段階と、
前記第1金属膜、第2金属膜、及び第3金属膜をパターニングして前記第1金属膜パターン、第2金属膜パターン、及び第3金属膜パターンを形成する段階と、
を含むことを特徴とする請求項14に記載の薄膜トランジスタの製造方法。 - 前記第1金属膜パターンは、Cr、Cr合金、Mo、及びMo合金のうち少なくとも一つを含むことを特徴とする請求項14に記載の薄膜トランジスタの製造方法。
- 前記第2金属膜パターンは、Al、AlSi、AlNd、及びAlCuのうち少なくとも一つを含むことを特徴とする請求項14に記載の薄膜トランジスタの製造方法。
- 前記第3金属膜パターンパターンは、Ti、Ti合金、Ta、及びTa合金のうち少なくとも一つを含むことを特徴とする請求項14に記載の薄膜トランジスタの製造方法。
- 前記第1金属膜パターンは、Ti、Ti合金、Ta、及びTa合金のうち少なくとも一つを含むことを特徴とする請求項14に記載の薄膜トランジスタの製造方法。
- 前記第2金属膜パターンの形成前に前記第1金属膜パターン上に保護膜パターンを形成する段階をさらに含むことを特徴とする請求項17に記載の薄膜トランジスタの製造方法。
- 請求項13に記載の方法により薄膜トランジスタを製造し、前記薄膜トランジスタを覆うように絶縁膜を形成した後、前記絶縁膜上に前記薄膜トランジスタのソース電極またはドレイン電極に接続した画素電極を形成する段階を含むことを特徴とする平板表示装置の製造方法。
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KR1020040050421A KR100626007B1 (ko) | 2004-06-30 | 2004-06-30 | 박막 트랜지스터, 상기 박막 트랜지스터의 제조방법, 이박막 트랜지스터를 구비한 평판표시장치, 및 이평판표시장치의 제조방법 |
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US (2) | US20060001091A1 (ja) |
JP (1) | JP2006019682A (ja) |
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-
2005
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- 2005-06-30 CN CNB2005100913114A patent/CN100487920C/zh active Active
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- 2008-07-03 US US12/216,424 patent/US7749827B2/en active Active
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US8409887B2 (en) | 2009-03-03 | 2013-04-02 | Samsung Display Co., Ltd. | Organic light emitting diode display device and method of fabricating the same |
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US9117798B2 (en) | 2009-03-27 | 2015-08-25 | Samsung Display Co., Ltd. | Thin film transistor, method of fabricating the same and organic light emitting diode display device including the same |
US8890165B2 (en) | 2009-11-13 | 2014-11-18 | Samsung Display Co., Ltd. | Method of forming polycrystalline silicon layer, thin film transistor, organic light emitting diode display device having the same, and methods of fabricating the same |
KR101784995B1 (ko) | 2010-10-21 | 2017-10-13 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 그를 포함하는 유기 전계 발광 표시장치 및 그들의 제조방법 |
JP2019159321A (ja) * | 2018-03-08 | 2019-09-19 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 表示装置 |
JP7280716B2 (ja) | 2018-03-08 | 2023-05-24 | 三星ディスプレイ株式會社 | 表示装置 |
CN110161761A (zh) * | 2019-05-10 | 2019-08-23 | 香港科技大学 | 液晶显示面板及其制作方法以及显示设备 |
Also Published As
Publication number | Publication date |
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KR20060001321A (ko) | 2006-01-06 |
KR100626007B1 (ko) | 2006-09-20 |
CN1716637A (zh) | 2006-01-04 |
US20060001091A1 (en) | 2006-01-05 |
CN100487920C (zh) | 2009-05-13 |
US20080299713A1 (en) | 2008-12-04 |
US7749827B2 (en) | 2010-07-06 |
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