JP2005536039A - Nromメモリセルアレイの製造方法 - Google Patents
Nromメモリセルアレイの製造方法 Download PDFInfo
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- JP2005536039A JP2005536039A JP2004516477A JP2004516477A JP2005536039A JP 2005536039 A JP2005536039 A JP 2005536039A JP 2004516477 A JP2004516477 A JP 2004516477A JP 2004516477 A JP2004516477 A JP 2004516477A JP 2005536039 A JP2005536039 A JP 2005536039A
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- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 31
- 229920005591 polysilicon Polymers 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 20
- 150000004767 nitrides Chemical class 0.000 claims description 11
- 239000002019 doping agent Substances 0.000 claims description 8
- 238000010292 electrical insulation Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 115
- 230000008520 organization Effects 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 238000002513 implantation Methods 0.000 description 10
- 239000013067 intermediate product Substances 0.000 description 10
- 238000001465 metallisation Methods 0.000 description 10
- 125000006850 spacer group Chemical group 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000001459 lithography Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
2 ゲート電極
3 ソース/ドレイン領域
4 ソース/ドレイン領域
5 境界層
6 メモリ層
7 境界層
8 ビット線
9 トレンチ
10 pウェル
11 ドーピング領域
12 エッジ絶縁部
13 酸化物層
14 ポリシリコン層
15 金属含有層
16 ハードマスク
17 スペーサ
18 ポリシリコン層
19 金属含有層
20 ハードマスク層
21 スペーサ
22 アンチパンチ注入
23 チャネル領域部
24 支持構造
Claims (4)
- NROMメモリセルアレイの製造方法であって、ここで、半導体本体(1)あるいは半導体層の上面に、ソース/ドレイン領域(3,4)を形成するためのドーパントが提供され、半導体材料の内部において互いに間隔をおいて平行に配置されたトレンチ(9)がエッチングされ、そして、これらトレンチ(9)間において、該半導体本体(1)あるいは該半導体層の該上面の上に、各々、トレンチ(9)と平行に走るビット線(8)が配置され、該ビット線は、関連する該トレンチ(9)の間に存在するソース/ドレイン領域(3,4)と電気的に接続され、かつ、その上面に、電気的絶縁のために被覆層(16/17)を備え、少なくとも該トレンチ(9)の壁に、メモリ層(5,6,7)が提供され、所定の間隔をおいてゲート電極(2)が該トレンチ内に配置され、該ゲート電極(2)は、該ビット線(8)の該方向を横切って走るように提供されたワード線(18/19)と電気的に接続される、製造方法において、
該ゲート電極(2)用のポリシリコンが該トレンチ(9)内に提供された後に、該上面が、該被覆層(16)の上面に達するまでバックグラインディングされて平坦化され、そして、その後、該ワード線用のポリシリコン層(18)が全面に形成され、かつ、該ワード線を形成するためにパターニングされることを特徴とする、NROMメモリセルアレイの製造方法。 - 前記バックグラインディングは、CMP法によって実施される、請求項1に記載の方法。
- 被覆層(16/17)として窒化物あるいは酸化物が前記ビット線(8)の上に提供され、そして、該被覆層は、前記ポリシリコンの前記バックグラインディングの際、ストップ層として利用される、請求項1または2に記載の方法。
- 前記メモリセルアレイの外部において前記ビット線(8)を用いて、前記メモリセルアレイの外部において前記ポリシリコンの平坦化を支持するための支持構造(24)が構成される、請求項1から3のいずれか一項に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10229065A DE10229065A1 (de) | 2002-06-28 | 2002-06-28 | Verfahren zur Herstellung eines NROM-Speicherzellenfeldes |
PCT/DE2003/001965 WO2004003979A2 (de) | 2002-06-28 | 2003-06-12 | Verfahren zur herstellung eines nrom-speicherzellenfeldes |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005536039A true JP2005536039A (ja) | 2005-11-24 |
Family
ID=29795945
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004516477A Ceased JP2005536039A (ja) | 2002-06-28 | 2003-06-12 | Nromメモリセルアレイの製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7094648B2 (ja) |
EP (1) | EP1518277B1 (ja) |
JP (1) | JP2005536039A (ja) |
KR (1) | KR100608507B1 (ja) |
CN (1) | CN100369257C (ja) |
DE (2) | DE10229065A1 (ja) |
TW (1) | TWI233664B (ja) |
WO (1) | WO2004003979A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2021171445A1 (ja) * | 2020-02-26 | 2021-09-02 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4334315B2 (ja) * | 2003-10-10 | 2009-09-30 | 株式会社ルネサステクノロジ | 半導体記憶装置の製造方法 |
US7209389B2 (en) * | 2004-02-03 | 2007-04-24 | Macronix International Co., Ltd. | Trap read only non-volatile memory (TROM) |
US7335939B2 (en) * | 2005-05-23 | 2008-02-26 | Infineon Technologies Ag | Semiconductor memory device and method of production |
US7364997B2 (en) * | 2005-07-07 | 2008-04-29 | Micron Technology, Inc. | Methods of forming integrated circuitry and methods of forming local interconnects |
US7759726B2 (en) * | 2005-07-12 | 2010-07-20 | Macronix International Co., Ltd. | Non-volatile memory device, non-volatile memory cell thereof and method of fabricating the same |
US7528425B2 (en) * | 2005-07-29 | 2009-05-05 | Infineon Technologies Ag | Semiconductor memory with charge-trapping stack arrangement |
CN102074471B (zh) * | 2009-11-24 | 2012-09-05 | 上海华虹Nec电子有限公司 | Sonos闪存器件采用氧化铝作隧穿电介质膜的制作方法 |
CN102891147B (zh) * | 2011-07-19 | 2015-06-03 | 旺宏电子股份有限公司 | 记忆体结构 |
KR20150020847A (ko) * | 2013-08-19 | 2015-02-27 | 에스케이하이닉스 주식회사 | 3차원 반도체 장치, 이를 구비하는 저항 변화 메모리 장치, 및 그 제조방법 |
KR102323253B1 (ko) * | 2019-06-21 | 2021-11-09 | 삼성전자주식회사 | 반도체 소자 및 반도체 소자의 제조방법 |
Family Cites Families (16)
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US5229312A (en) * | 1992-04-13 | 1993-07-20 | North American Philips Corp. | Nonvolatile trench memory device and self-aligned method for making such a device |
US5768192A (en) | 1996-07-23 | 1998-06-16 | Saifun Semiconductors, Ltd. | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
US6025626A (en) * | 1996-09-23 | 2000-02-15 | Siemens, Aktiengesellschaft | Nonvolatile memory cell |
DE19639026C1 (de) * | 1996-09-23 | 1998-04-09 | Siemens Ag | Selbstjustierte nichtflüchtige Speicherzelle |
KR100223890B1 (ko) * | 1996-12-31 | 1999-10-15 | 구본준 | 반도체 메모리 소자 및 그의 제조 방법 |
JP3512976B2 (ja) * | 1997-03-21 | 2004-03-31 | 株式会社東芝 | 不揮発性半導体記憶装置およびその製造方法 |
US6768165B1 (en) | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
US6013551A (en) * | 1997-09-26 | 2000-01-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacture of self-aligned floating gate, flash memory cell and device manufactured thereby |
EP1060518A1 (de) * | 1998-02-20 | 2000-12-20 | Infineon Technologies AG | Graben-gate-mos-transistor, dessen verwendung in einer eeprom-anordnung und verfahren zu dessen herstellung |
US6215148B1 (en) | 1998-05-20 | 2001-04-10 | Saifun Semiconductors Ltd. | NROM cell with improved programming, erasing and cycling |
US6348711B1 (en) | 1998-05-20 | 2002-02-19 | Saifun Semiconductors Ltd. | NROM cell with self-aligned programming and erasure areas |
US6384451B1 (en) * | 1999-03-24 | 2002-05-07 | John Caywood | Method and apparatus for injecting charge onto the floating gate of a nonvolatile memory cell |
DE19943760C1 (de) * | 1999-09-13 | 2001-02-01 | Infineon Technologies Ag | DRAM-Zellenanordnung und Verfahren zu deren Herstellung |
MXPA03001223A (es) * | 2000-08-11 | 2003-09-22 | Infineon Technologies Ag | Celda de memoria, dispositivo de celda de memoria y metodo de fabricaccion del mismo. |
DE10039441A1 (de) | 2000-08-11 | 2002-02-28 | Infineon Technologies Ag | Speicherzelle, Speicherzellenanordnung und Herstellungsverfahren |
DE10129958B4 (de) * | 2001-06-21 | 2006-07-13 | Infineon Technologies Ag | Speicherzellenanordnung und Herstellungsverfahren |
-
2002
- 2002-06-28 DE DE10229065A patent/DE10229065A1/de not_active Ceased
-
2003
- 2003-05-22 TW TW092113901A patent/TWI233664B/zh not_active IP Right Cessation
- 2003-06-12 DE DE50307026T patent/DE50307026D1/de not_active Expired - Fee Related
- 2003-06-12 WO PCT/DE2003/001965 patent/WO2004003979A2/de active IP Right Grant
- 2003-06-12 EP EP03761415A patent/EP1518277B1/de not_active Expired - Lifetime
- 2003-06-12 KR KR1020047021234A patent/KR100608507B1/ko not_active IP Right Cessation
- 2003-06-12 JP JP2004516477A patent/JP2005536039A/ja not_active Ceased
- 2003-06-12 CN CNB038153645A patent/CN100369257C/zh not_active Expired - Fee Related
-
2004
- 2004-12-27 US US11/023,041 patent/US7094648B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2021171445A1 (ja) * | 2020-02-26 | 2021-09-02 | ||
JP7271782B2 (ja) | 2020-02-26 | 2023-05-11 | ヤマハ発動機株式会社 | シャフト駆動装置及び部品実装装置 |
Also Published As
Publication number | Publication date |
---|---|
EP1518277B1 (de) | 2007-04-11 |
CN1666344A (zh) | 2005-09-07 |
TWI233664B (en) | 2005-06-01 |
DE50307026D1 (de) | 2007-05-24 |
WO2004003979A2 (de) | 2004-01-08 |
TW200414450A (en) | 2004-08-01 |
KR100608507B1 (ko) | 2006-08-08 |
US7094648B2 (en) | 2006-08-22 |
WO2004003979A3 (de) | 2004-03-18 |
KR20050010977A (ko) | 2005-01-28 |
DE10229065A1 (de) | 2004-01-29 |
US20050164456A1 (en) | 2005-07-28 |
EP1518277A2 (de) | 2005-03-30 |
CN100369257C (zh) | 2008-02-13 |
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