CN102074471B - Sonos闪存器件采用氧化铝作隧穿电介质膜的制作方法 - Google Patents
Sonos闪存器件采用氧化铝作隧穿电介质膜的制作方法 Download PDFInfo
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1666344A (zh) * | 2002-06-28 | 2005-09-07 | 因芬尼昂技术股份公司 | 氮化物只读存储器存储单元阵列制造方法 |
CN101093725A (zh) * | 2006-06-22 | 2007-12-26 | 旺宏电子股份有限公司 | 非挥发性记忆元件的操作方法 |
CN101192532A (zh) * | 2006-11-30 | 2008-06-04 | 三星电子株式会社 | 电荷捕获层及其制造方法和电荷捕获型半导体存储装置 |
CN101211987A (zh) * | 2006-12-29 | 2008-07-02 | 海力士半导体有限公司 | 具有电荷俘获层的非易失性存储器件及其制造方法 |
CN101369583A (zh) * | 2007-08-13 | 2009-02-18 | 旺宏电子股份有限公司 | 可高速擦除的电荷捕捉存储单元 |
CN101399290A (zh) * | 2007-09-25 | 2009-04-01 | 株式会社东芝 | 非易失性半导体存储器器件和其制造方法 |
CN101414631A (zh) * | 2007-10-18 | 2009-04-22 | 旺宏电子股份有限公司 | 半导体装置及其制造方法 |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1666344A (zh) * | 2002-06-28 | 2005-09-07 | 因芬尼昂技术股份公司 | 氮化物只读存储器存储单元阵列制造方法 |
CN101093725A (zh) * | 2006-06-22 | 2007-12-26 | 旺宏电子股份有限公司 | 非挥发性记忆元件的操作方法 |
CN101192532A (zh) * | 2006-11-30 | 2008-06-04 | 三星电子株式会社 | 电荷捕获层及其制造方法和电荷捕获型半导体存储装置 |
CN101211987A (zh) * | 2006-12-29 | 2008-07-02 | 海力士半导体有限公司 | 具有电荷俘获层的非易失性存储器件及其制造方法 |
CN101369583A (zh) * | 2007-08-13 | 2009-02-18 | 旺宏电子股份有限公司 | 可高速擦除的电荷捕捉存储单元 |
CN101399290A (zh) * | 2007-09-25 | 2009-04-01 | 株式会社东芝 | 非易失性半导体存储器器件和其制造方法 |
CN101414631A (zh) * | 2007-10-18 | 2009-04-22 | 旺宏电子股份有限公司 | 半导体装置及其制造方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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