MXPA03001223A - Celda de memoria, dispositivo de celda de memoria y metodo de fabricaccion del mismo. - Google Patents
Celda de memoria, dispositivo de celda de memoria y metodo de fabricaccion del mismo.Info
- Publication number
- MXPA03001223A MXPA03001223A MXPA03001223A MXPA03001223A MXPA03001223A MX PA03001223 A MXPA03001223 A MX PA03001223A MX PA03001223 A MXPA03001223 A MX PA03001223A MX PA03001223 A MXPA03001223 A MX PA03001223A MX PA03001223 A MXPA03001223 A MX PA03001223A
- Authority
- MX
- Mexico
- Prior art keywords
- memory cell
- production
- cell device
- memory
- cell
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10039441A DE10039441A1 (de) | 2000-08-11 | 2000-08-11 | Speicherzelle, Speicherzellenanordnung und Herstellungsverfahren |
US09/900,654 US20020024092A1 (en) | 2000-08-11 | 2001-07-06 | Memory cell, memory cell arrangement and fabrication method |
PCT/DE2001/002997 WO2002015276A2 (de) | 2000-08-11 | 2001-08-06 | Speicherzelle, speicherzellenanordnung und herstellungsverfahren |
Publications (1)
Publication Number | Publication Date |
---|---|
MXPA03001223A true MXPA03001223A (es) | 2003-09-22 |
Family
ID=26006676
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MXPA03001223A MXPA03001223A (es) | 2000-08-11 | 2001-08-06 | Celda de memoria, dispositivo de celda de memoria y metodo de fabricaccion del mismo. |
Country Status (9)
Country | Link |
---|---|
US (1) | US6844584B2 (es) |
EP (1) | EP1307920A2 (es) |
JP (1) | JP2004517464A (es) |
CN (1) | CN100446258C (es) |
BR (1) | BR0113164A (es) |
MX (1) | MXPA03001223A (es) |
RU (1) | RU2247441C2 (es) |
TW (1) | TWI244199B (es) |
WO (1) | WO2002015276A2 (es) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10204868B4 (de) * | 2002-02-06 | 2007-08-23 | Infineon Technologies Ag | Speicherzelle mit Grabenspeichertransistor und Oxid-Nitrid-Oxid-Dielektrikum |
DE10219917A1 (de) * | 2002-05-03 | 2003-11-13 | Infineon Technologies Ag | Grabentransistor in einem Halbleiterkörper aus Silizium und Herstellungsverfahren |
DE10225410A1 (de) | 2002-06-07 | 2004-01-08 | Infineon Technologies Ag | Verfahren zur Herstellung von NROM-Speicherzellen mit Grabentransistoren |
DE10226964A1 (de) | 2002-06-17 | 2004-01-08 | Infineon Technologies Ag | Verfahren zur Herstellung einer NROM-Speicherzellenanordnung |
DE10229065A1 (de) * | 2002-06-28 | 2004-01-29 | Infineon Technologies Ag | Verfahren zur Herstellung eines NROM-Speicherzellenfeldes |
KR100885910B1 (ko) * | 2003-04-30 | 2009-02-26 | 삼성전자주식회사 | 게이트 적층물에 oha막을 구비하는 비 휘발성 반도체메모리 장치 및 그 제조방법 |
US6979857B2 (en) * | 2003-07-01 | 2005-12-27 | Micron Technology, Inc. | Apparatus and method for split gate NROM memory |
DE10333549B3 (de) * | 2003-07-23 | 2005-01-13 | Infineon Technologies Ag | Charge-Trapping-Speicherzelle |
US6987689B2 (en) * | 2003-08-20 | 2006-01-17 | International Business Machines Corporation | Non-volatile multi-stable memory device and methods of making and using the same |
US6977412B2 (en) * | 2003-09-05 | 2005-12-20 | Micron Technology, Inc. | Trench corner effect bidirectional flash memory cell |
US6965143B2 (en) * | 2003-10-10 | 2005-11-15 | Advanced Micro Devices, Inc. | Recess channel flash architecture for reduced short channel effect |
US7041545B2 (en) * | 2004-03-08 | 2006-05-09 | Infineon Technologies Ag | Method for producing semiconductor memory devices and integrated memory device |
KR100594266B1 (ko) * | 2004-03-17 | 2006-06-30 | 삼성전자주식회사 | 소노스 타입 메모리 소자 |
US20060043463A1 (en) * | 2004-09-01 | 2006-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Floating gate having enhanced charge retention |
TWI270199B (en) * | 2005-01-31 | 2007-01-01 | Powerchip Semiconductor Corp | Non-volatile memory and manufacturing method and operating method thereof |
US7186607B2 (en) * | 2005-02-18 | 2007-03-06 | Infineon Technologies Ag | Charge-trapping memory device and method for production |
US7196008B1 (en) * | 2005-03-23 | 2007-03-27 | Spansion Llc | Aluminum oxide as liner or cover layer to spacers in memory device |
DE102005024951A1 (de) * | 2005-05-31 | 2006-12-14 | Infineon Technologies Ag | Halbleiterspeicherbauelement |
US7468299B2 (en) * | 2005-08-04 | 2008-12-23 | Macronix International Co., Ltd. | Non-volatile memory cells and methods of manufacturing the same |
US7292478B2 (en) * | 2005-09-08 | 2007-11-06 | Macronix International Co., Ltd. | Non-volatile memory including charge-trapping layer, and operation and fabrication of the same |
US20070221979A1 (en) * | 2006-03-22 | 2007-09-27 | Dirk Caspary | Method for production of memory devices and semiconductor memory device |
US20070257293A1 (en) * | 2006-05-08 | 2007-11-08 | Josef Willer | Semiconductor memory device and method for production of the semiconductor memory device |
JP2008166528A (ja) * | 2006-12-28 | 2008-07-17 | Spansion Llc | 半導体装置およびその製造方法 |
US7778073B2 (en) | 2007-10-15 | 2010-08-17 | Qimonda Ag | Integrated circuit having NAND memory cell strings |
JP5405737B2 (ja) * | 2007-12-20 | 2014-02-05 | スパンション エルエルシー | 半導体装置およびその製造方法 |
JP2009277782A (ja) * | 2008-05-13 | 2009-11-26 | Oki Semiconductor Co Ltd | 半導体記憶装置および半導体記憶装置の製造方法 |
US8304840B2 (en) | 2010-07-29 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Spacer structures of a semiconductor device |
RU2543668C2 (ru) * | 2012-08-27 | 2015-03-10 | Федеральное государственное бюджетное учреждение науки Физико-технический институт им. Ф.Ф. Иоффе Российской академии наук | Полевой транзистор с ячейкой памяти |
US9412790B1 (en) * | 2012-12-04 | 2016-08-09 | Crossbar, Inc. | Scalable RRAM device architecture for a non-volatile memory device and method |
CN108735772B (zh) * | 2017-04-14 | 2020-08-21 | 上海磁宇信息科技有限公司 | 一种共享型的高密度随机存储器架构 |
CN108735773A (zh) * | 2017-04-14 | 2018-11-02 | 上海磁宇信息科技有限公司 | 一种超高密度随机存储器架构 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3731163A (en) * | 1972-03-22 | 1973-05-01 | United Aircraft Corp | Low voltage charge storage memory element |
SU752476A1 (ru) | 1978-07-24 | 1980-07-30 | Предприятие П/Я А-1889 | Ячейка пам ти |
DE2946864A1 (de) * | 1978-11-27 | 1980-06-04 | Texas Instruments Inc | Nicht-fluechtige halbleiterspeicherelemente und verfahren zu ihrer herstellung |
US4360900A (en) * | 1978-11-27 | 1982-11-23 | Texas Instruments Incorporated | Non-volatile semiconductor memory elements |
US4242737A (en) * | 1978-11-27 | 1980-12-30 | Texas Instruments Incorporated | Non-volatile semiconductor memory elements |
JP2662076B2 (ja) * | 1990-05-02 | 1997-10-08 | 松下電子工業株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
DE19545903C2 (de) | 1995-12-08 | 1997-09-18 | Siemens Ag | Festwertspeicherzellenanordnung und Verfahren zu deren Herstellung |
DE19600423C2 (de) | 1996-01-08 | 2001-07-05 | Siemens Ag | Elektrisch programmierbare Speicherzellenanordnung und Verfahren zu deren Herstellung |
DE19600422C1 (de) | 1996-01-08 | 1997-08-21 | Siemens Ag | Elektrisch programmierbare Speicherzellenanordnung und Verfahren zu deren Herstellung |
US5768192A (en) | 1996-07-23 | 1998-06-16 | Saifun Semiconductors, Ltd. | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
US5817560A (en) | 1996-09-12 | 1998-10-06 | Advanced Micro Devices, Inc. | Ultra short trench transistors and process for making same |
US5808340A (en) * | 1996-09-18 | 1998-09-15 | Advanced Micro Devices, Inc. | Short channel self aligned VMOS field effect transistor |
US5966603A (en) * | 1997-06-11 | 1999-10-12 | Saifun Semiconductors Ltd. | NROM fabrication method with a periphery portion |
US5973358A (en) * | 1997-07-01 | 1999-10-26 | Citizen Watch Co., Ltd. | SOI device having a channel with variable thickness |
US6768165B1 (en) | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
JP3544833B2 (ja) * | 1997-09-18 | 2004-07-21 | 株式会社東芝 | 半導体装置及びその製造方法 |
TW383427B (en) * | 1998-04-03 | 2000-03-01 | United Microelectronics Corp | Method for etching tantalum oxide |
EP0967654A1 (en) * | 1998-06-26 | 1999-12-29 | EM Microelectronic-Marin SA | Non-volatile semiconductor memory device |
-
2001
- 2001-08-06 EP EP01962611A patent/EP1307920A2/de not_active Withdrawn
- 2001-08-06 CN CNB018139574A patent/CN100446258C/zh not_active Expired - Fee Related
- 2001-08-06 BR BR0113164-8A patent/BR0113164A/pt not_active IP Right Cessation
- 2001-08-06 RU RU2003106401/28A patent/RU2247441C2/ru not_active IP Right Cessation
- 2001-08-06 MX MXPA03001223A patent/MXPA03001223A/es unknown
- 2001-08-06 WO PCT/DE2001/002997 patent/WO2002015276A2/de not_active Application Discontinuation
- 2001-08-06 JP JP2002520306A patent/JP2004517464A/ja active Pending
- 2001-08-08 TW TW090119349A patent/TWI244199B/zh not_active IP Right Cessation
- 2001-08-09 US US09/927,573 patent/US6844584B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
TWI244199B (en) | 2005-11-21 |
US6844584B2 (en) | 2005-01-18 |
RU2247441C2 (ru) | 2005-02-27 |
WO2002015276A3 (de) | 2002-06-06 |
JP2004517464A (ja) | 2004-06-10 |
US20030015752A1 (en) | 2003-01-23 |
CN1446378A (zh) | 2003-10-01 |
CN100446258C (zh) | 2008-12-24 |
WO2002015276A2 (de) | 2002-02-21 |
EP1307920A2 (de) | 2003-05-07 |
BR0113164A (pt) | 2003-06-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
MXPA03001223A (es) | Celda de memoria, dispositivo de celda de memoria y metodo de fabricaccion del mismo. | |
TWI315741B (en) | A-isomaltosyltransferase, process for producing the same and use thereof | |
MXPA03005454A (es) | Estructura absorbente delgada, de alta capacidad y metodo para producir la misma. | |
ZA996497B (en) | Electrolyte tank and manufacturing method thereof. | |
WO2002015264A3 (de) | Verkapseltes organisch-elektronisches bauteil, verfahren zu seiner herstellung und seine verwendung | |
IL152967A0 (en) | Tapping device and container therefor, and method for the manufacture thereof | |
ZA200104196B (en) | Azepinoindole derivatives, the production and use thereof. | |
MXPA03005445A (es) | Barra colectora 12c para aislar los circuitos integrados seleccionados para una comunicacion rapida de barra colectora 12c. | |
EP1317007A4 (en) | METHOD AND DEVICE FOR PRODUCING ELECTRODE PLATES FOR CELLS AND CELL USING THESE ELECTRODE PLATES | |
SG105478A1 (en) | Semiconductor device and process for producing the same. | |
EP1263048A4 (en) | FERROELECTRIC STORAGE ARRANGEMENT AND ITS MANUFACTURING METHOD AND HYBRID ARRANGEMENT | |
AU2001277255A1 (en) | Write-once memory array controller, system, and method | |
SG116429A1 (en) | Cell control method and cell system. | |
MXPA01008148A (es) | Derivados de epotilona, metodo para su produccion y su uso farmaceutico. | |
HK1034363A1 (en) | Method for producing square cell. | |
KR20050040160A (en) | Capacitor, memory device provided with the same and method for manufacturing thereof | |
ZA200109475B (en) | Redox system and process. | |
HK1041110A1 (en) | Electrode for battery, manufacturing method thereof, and apparatus for it. | |
IL151605A0 (en) | Cardiomyocyte cell populations, methods for obtaining the same and devices utilizing the same | |
MXPA03003376A (es) | Celda. | |
MXPA02012826A (es) | Resinas epoxi y proceso para hacer las mismas. | |
HK1047503A1 (en) | Sealing plate, cell using the sealing plate, and method of manufacturing the cell. | |
PL366168A1 (en) | Impregnate, method for the production and use thereof | |
MXPA03002517A (es) | Proceso de hidrofisuracion. | |
MXPA01006792A (es) | Bateria. |