JP2005529363A5 - - Google Patents

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Publication number
JP2005529363A5
JP2005529363A5 JP2004511911A JP2004511911A JP2005529363A5 JP 2005529363 A5 JP2005529363 A5 JP 2005529363A5 JP 2004511911 A JP2004511911 A JP 2004511911A JP 2004511911 A JP2004511911 A JP 2004511911A JP 2005529363 A5 JP2005529363 A5 JP 2005529363A5
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JP
Japan
Prior art keywords
cleaning composition
weight
hydroxide
trans
group
Prior art date
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Application number
JP2004511911A
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English (en)
Japanese (ja)
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JP2005529363A (ja
JP4330529B2 (ja
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Application filed filed Critical
Priority claimed from PCT/US2003/016829 external-priority patent/WO2003104901A2/en
Publication of JP2005529363A publication Critical patent/JP2005529363A/ja
Publication of JP2005529363A5 publication Critical patent/JP2005529363A5/ja
Application granted granted Critical
Publication of JP4330529B2 publication Critical patent/JP4330529B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004511911A 2002-06-07 2003-05-27 マイクロエレクトロニクス洗浄およびarc除去組成物 Expired - Fee Related JP4330529B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US38680002P 2002-06-07 2002-06-07
US40168802P 2002-08-07 2002-08-07
PCT/US2003/016829 WO2003104901A2 (en) 2002-06-07 2003-05-27 Microelectronic cleaning and arc remover compositions

Publications (3)

Publication Number Publication Date
JP2005529363A JP2005529363A (ja) 2005-09-29
JP2005529363A5 true JP2005529363A5 (enExample) 2007-05-24
JP4330529B2 JP4330529B2 (ja) 2009-09-16

Family

ID=29739917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004511911A Expired - Fee Related JP4330529B2 (ja) 2002-06-07 2003-05-27 マイクロエレクトロニクス洗浄およびarc除去組成物

Country Status (17)

Country Link
US (1) US8906838B2 (enExample)
EP (1) EP1512050A2 (enExample)
JP (1) JP4330529B2 (enExample)
KR (1) KR100958068B1 (enExample)
CN (2) CN102135735A (enExample)
AU (1) AU2003240827A1 (enExample)
BR (1) BR0311830A (enExample)
CA (1) CA2488737A1 (enExample)
IL (1) IL165581A (enExample)
IN (2) IN2004CH02744A (enExample)
MY (1) MY142745A (enExample)
NO (1) NO20050075L (enExample)
PL (1) PL207297B1 (enExample)
RS (1) RS106104A (enExample)
TW (1) TWI330766B (enExample)
WO (1) WO2003104901A2 (enExample)
ZA (1) ZA200409622B (enExample)

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US20080149884A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing
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US8110508B2 (en) * 2007-11-22 2012-02-07 Samsung Electronics Co., Ltd. Method of forming a bump structure using an etching composition for an under bump metallurgy layer
CN101487993A (zh) * 2008-01-18 2009-07-22 安集微电子(上海)有限公司 一种厚膜光刻胶清洗剂
CA2716641A1 (en) * 2008-02-29 2009-09-03 Mallinckrodt Baker, Inc. Microelectronic substrate cleaning compositions
JP2009231354A (ja) * 2008-03-19 2009-10-08 Fujifilm Corp 半導体デバイス用洗浄液、および洗浄方法
CN101359189B (zh) * 2008-09-17 2011-04-27 电子科技大学 正性光敏聚酰亚胺光刻胶用显影液
WO2010081661A2 (en) * 2009-01-14 2010-07-22 Mallinckrodt Baker Bv Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level
MX2011008787A (es) * 2009-02-25 2011-09-29 Avantor Performance Mat Inc Composicion limpiadora microelectronica basada en solvente organico acido multiproposito.
EP2401352B1 (en) * 2009-02-25 2013-06-12 Avantor Performance Materials, Inc. Stripping compositions for cleaning ion implanted photoresist from semiconductor device wafers
US8754021B2 (en) 2009-02-27 2014-06-17 Advanced Technology Materials, Inc. Non-amine post-CMP composition and method of use
CN101901782B (zh) * 2010-07-21 2011-12-14 河北工业大学 极大规模集成电路多层布线碱性抛光后防氧化方法
CN101901784B (zh) * 2010-07-21 2012-05-30 河北工业大学 钽化学机械抛光工序中的表面清洗方法
EP2768920A4 (en) * 2011-10-21 2015-06-03 Advanced Tech Materials AMIN FREE POST-KMP COMPOSITION AND METHOD OF USE THEREOF
CN103809394B (zh) * 2012-11-12 2019-12-31 安集微电子科技(上海)股份有限公司 一种去除光阻蚀刻残留物的清洗液
US9460934B2 (en) 2013-03-15 2016-10-04 Globalfoundries Inc. Wet strip process for an antireflective coating layer
KR102153113B1 (ko) 2013-10-21 2020-09-08 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 표면 잔류물 제거용 세정 제형
JP2015108041A (ja) * 2013-12-03 2015-06-11 ダイキン工業株式会社 洗浄用組成物
WO2015084921A1 (en) 2013-12-06 2015-06-11 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
WO2015156171A1 (ja) 2014-04-10 2015-10-15 三菱瓦斯化学株式会社 半導体素子の洗浄用液体組成物、および半導体素子の洗浄方法
US9570285B2 (en) * 2015-04-17 2017-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning composition and methods thereof
TWI705132B (zh) 2015-10-08 2020-09-21 日商三菱瓦斯化學股份有限公司 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法
TWI816635B (zh) 2015-10-15 2023-10-01 日商三菱瓦斯化學股份有限公司 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法
US10988718B2 (en) 2016-03-09 2021-04-27 Entegris, Inc. Tungsten post-CMP cleaning composition
CN107313055A (zh) * 2017-07-19 2017-11-03 马爱连 一种金属油污清洗剂及其制备方法和使用方法
US11230668B2 (en) * 2018-03-26 2022-01-25 Mitsubishi Gas Chemical Company, Inc. Etchant
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JPWO2022163350A1 (enExample) * 2021-01-29 2022-08-04
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JP2024060243A (ja) * 2022-10-19 2024-05-02 Jsr株式会社 半導体処理用組成物及び処理方法

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