CN102135735A - 用于微电子基底的清洁组合物 - Google Patents
用于微电子基底的清洁组合物 Download PDFInfo
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- CN102135735A CN102135735A CN2011100761494A CN201110076149A CN102135735A CN 102135735 A CN102135735 A CN 102135735A CN 2011100761494 A CN2011100761494 A CN 2011100761494A CN 201110076149 A CN201110076149 A CN 201110076149A CN 102135735 A CN102135735 A CN 102135735A
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- 229910052802 copper Inorganic materials 0.000 claims abstract description 15
- 239000003495 polar organic solvent Substances 0.000 claims abstract description 13
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 22
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- 125000000217 alkyl group Chemical group 0.000 description 8
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- 150000001721 carbon Chemical group 0.000 description 8
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- 125000003118 aryl group Chemical group 0.000 description 7
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- 235000011187 glycerol Nutrition 0.000 description 2
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- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- GYSDUVRPSWKYDJ-UHFFFAOYSA-N selinone Chemical compound C1=CC(OCC=C(C)C)=CC=C1C1OC2=CC(O)=CC(O)=C2C(=O)C1 GYSDUVRPSWKYDJ-UHFFFAOYSA-N 0.000 description 2
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- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- BYEAHWXPCBROCE-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropan-2-ol Chemical compound FC(F)(F)C(O)C(F)(F)F BYEAHWXPCBROCE-UHFFFAOYSA-N 0.000 description 1
- JEXYCADTAFPULN-UHFFFAOYSA-N 1-propylsulfonylpropane Chemical compound CCCS(=O)(=O)CCC JEXYCADTAFPULN-UHFFFAOYSA-N 0.000 description 1
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 1
- CMJLMPKFQPJDKP-UHFFFAOYSA-N 3-methylthiolane 1,1-dioxide Chemical compound CC1CCS(=O)(=O)C1 CMJLMPKFQPJDKP-UHFFFAOYSA-N 0.000 description 1
- AGGCEDYMGLPKNS-UHFFFAOYSA-N 5,5,6-trimethylundec-3-yne-2,2-diol Chemical class CCCCCC(C)C(C)(C)C#CC(C)(O)O AGGCEDYMGLPKNS-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical class F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
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- OUUQCZGPVNCOIJ-UHFFFAOYSA-M Superoxide Chemical compound [O-][O] OUUQCZGPVNCOIJ-UHFFFAOYSA-M 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- GUNJVIDCYZYFGV-UHFFFAOYSA-K antimony trifluoride Chemical compound F[Sb](F)F GUNJVIDCYZYFGV-UHFFFAOYSA-K 0.000 description 1
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- 239000012964 benzotriazole Substances 0.000 description 1
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- 239000012933 diacyl peroxide Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- VTIIJXUACCWYHX-UHFFFAOYSA-L disodium;carboxylatooxy carbonate Chemical compound [Na+].[Na+].[O-]C(=O)OOC([O-])=O VTIIJXUACCWYHX-UHFFFAOYSA-L 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- MLRKYSNODSLPAB-UHFFFAOYSA-N hex-1-yn-1-ol Chemical class CCCCC#CO MLRKYSNODSLPAB-UHFFFAOYSA-N 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- LYTNHSCLZRMKON-UHFFFAOYSA-L oxygen(2-);zirconium(4+);diacetate Chemical compound [O-2].[Zr+4].CC([O-])=O.CC([O-])=O LYTNHSCLZRMKON-UHFFFAOYSA-L 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
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- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 150000004977 peroxyborates Chemical class 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229960001922 sodium perborate Drugs 0.000 description 1
- 229940045872 sodium percarbonate Drugs 0.000 description 1
- YKLJGMBLPUQQOI-UHFFFAOYSA-M sodium;oxidooxy(oxo)borane Chemical compound [Na+].[O-]OB=O YKLJGMBLPUQQOI-UHFFFAOYSA-M 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- IXZDIALLLMRYOU-UHFFFAOYSA-N tert-butyl hypochlorite Chemical compound CC(C)(C)OCl IXZDIALLLMRYOU-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/04—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors
- C23G1/06—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors
- C23G1/061—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors nitrogen-containing compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/26—Cleaning or polishing of the conductive pattern
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
- H05K2203/0783—Using solvent, e.g. for cleaning; Regulating solvent content of pastes or coatings for adjusting the viscosity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/121—Metallo-organic compounds
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/122—Organic non-polymeric compounds, e.g. oil, wax or thiol
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
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| US38680002P | 2002-06-07 | 2002-06-07 | |
| US60/386,800 | 2002-06-07 | ||
| US40168802P | 2002-08-07 | 2002-08-07 | |
| US60/401,688 | 2002-08-07 |
Related Parent Applications (1)
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| CN038130262A Division CN1659480A (zh) | 2002-06-07 | 2003-05-27 | 用于微电子基底的清洁组合物 |
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| CN102135735A true CN102135735A (zh) | 2011-07-27 |
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| CN038130262A Pending CN1659480A (zh) | 2002-06-07 | 2003-05-27 | 用于微电子基底的清洁组合物 |
| CN2011100761494A Pending CN102135735A (zh) | 2002-06-07 | 2003-05-27 | 用于微电子基底的清洁组合物 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN038130262A Pending CN1659480A (zh) | 2002-06-07 | 2003-05-27 | 用于微电子基底的清洁组合物 |
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| EP (1) | EP1512050A2 (enExample) |
| JP (1) | JP4330529B2 (enExample) |
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| AU (1) | AU2003240827A1 (enExample) |
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| CA (1) | CA2488737A1 (enExample) |
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| MY (1) | MY142745A (enExample) |
| NO (1) | NO20050075L (enExample) |
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| RS (1) | RS106104A (enExample) |
| TW (1) | TWI330766B (enExample) |
| WO (1) | WO2003104901A2 (enExample) |
| ZA (1) | ZA200409622B (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103958640A (zh) * | 2011-10-21 | 2014-07-30 | 高级技术材料公司 | 无胺cmp后组合物及其使用方法 |
| US9340760B2 (en) | 2009-02-27 | 2016-05-17 | Advanced Technology Materials, Inc. | Non-amine post-CMP composition and method of use |
| CN106057653A (zh) * | 2015-04-17 | 2016-10-26 | 台湾积体电路制造股份有限公司 | 半导体装置的制造方法 |
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| US7923424B2 (en) * | 2005-02-14 | 2011-04-12 | Advanced Process Technologies, Llc | Semiconductor cleaning using superacids |
| EP1875493A2 (en) * | 2005-04-04 | 2008-01-09 | MALLINCKRODT BAKER, Inc. | Composition for cleaning ion implanted photoresist in front end of line applications |
| KR101477455B1 (ko) | 2005-06-07 | 2014-12-29 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 금속 및 유전체 상용성 희생 반사 방지 코팅 세정 및 제거 조성물 |
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| JP5292811B2 (ja) * | 2005-12-20 | 2013-09-18 | 三菱瓦斯化学株式会社 | 配線基板の残渣除去用組成物および洗浄方法 |
| KR101449774B1 (ko) * | 2006-12-21 | 2014-10-14 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 에칭 후 잔류물의 제거를 위한 액체 세정제 |
| US20080149884A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing |
| US8110508B2 (en) | 2007-11-22 | 2012-02-07 | Samsung Electronics Co., Ltd. | Method of forming a bump structure using an etching composition for an under bump metallurgy layer |
| CN101487993A (zh) * | 2008-01-18 | 2009-07-22 | 安集微电子（上海）有限公司 | 一种厚膜光刻胶清洗剂 |
| US8168577B2 (en) * | 2008-02-29 | 2012-05-01 | Avantor Performance Materials, Inc. | Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion |
| JP2009231354A (ja) * | 2008-03-19 | 2009-10-08 | Fujifilm Corp | 半導体デバイス用洗浄液、および洗浄方法 |
| CN101359189B (zh) * | 2008-09-17 | 2011-04-27 | 电子科技大学 | 正性光敏聚酰亚胺光刻胶用显影液 |
| WO2010081661A2 (en) * | 2009-01-14 | 2010-07-22 | Mallinckrodt Baker Bv | Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level |
| RU2011139105A (ru) * | 2009-02-25 | 2013-04-10 | Авантор Перформанс Матириалз, Инк. | Композиции для удаления фоторезиста для очистки ионно-имплантированного фоторезиста с пластин полупроводниковых устройств |
| EP2401655B1 (en) * | 2009-02-25 | 2014-03-12 | Avantor Performance Materials, Inc. | Multipurpose acidic, organic solvent based microelectronic cleaning composition |
| CN101901782B (zh) * | 2010-07-21 | 2011-12-14 | 河北工业大学 | 极大规模集成电路多层布线碱性抛光后防氧化方法 |
| CN101901784B (zh) * | 2010-07-21 | 2012-05-30 | 河北工业大学 | 钽化学机械抛光工序中的表面清洗方法 |
| CN103809394B (zh) * | 2012-11-12 | 2019-12-31 | 安集微电子科技（上海）股份有限公司 | 一种去除光阻蚀刻残留物的清洗液 |
| US9460934B2 (en) * | 2013-03-15 | 2016-10-04 | Globalfoundries Inc. | Wet strip process for an antireflective coating layer |
| EP3060642B1 (en) | 2013-10-21 | 2019-11-06 | FujiFilm Electronic Materials USA, Inc. | Cleaning formulations for removing residues on surfaces |
| JP2015108041A (ja) * | 2013-12-03 | 2015-06-11 | ダイキン工業株式会社 | 洗浄用組成物 |
| US9562211B2 (en) | 2013-12-06 | 2017-02-07 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning formulation for removing residues on surfaces |
| WO2015156171A1 (ja) | 2014-04-10 | 2015-10-15 | 三菱瓦斯化学株式会社 | 半導体素子の洗浄用液体組成物、および半導体素子の洗浄方法 |
| TWI705132B (zh) | 2015-10-08 | 2020-09-21 | 日商三菱瓦斯化學股份有限公司 | 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法 |
| TWI816635B (zh) | 2015-10-15 | 2023-10-01 | 日商三菱瓦斯化學股份有限公司 | 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法 |
| US10988718B2 (en) | 2016-03-09 | 2021-04-27 | Entegris, Inc. | Tungsten post-CMP cleaning composition |
| CN107313055A (zh) * | 2017-07-19 | 2017-11-03 | 马爱连 | 一种金属油污清洗剂及其制备方法和使用方法 |
| KR102333896B1 (ko) * | 2018-03-26 | 2021-12-02 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 에칭액 |
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| KR102853955B1 (ko) * | 2022-09-05 | 2025-09-03 | 재원산업 주식회사 | 과산화수소의 분해 안정성이 향상된 마스크 세정용 조성물 |
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-
2003
- 2003-05-27 PL PL374021A patent/PL207297B1/pl not_active IP Right Cessation
- 2003-05-27 KR KR1020047019579A patent/KR100958068B1/ko not_active Expired - Lifetime
- 2003-05-27 CA CA002488737A patent/CA2488737A1/en not_active Abandoned
- 2003-05-27 BR BR0311830-4A patent/BR0311830A/pt not_active IP Right Cessation
- 2003-05-27 RS YUP-1061/04A patent/RS106104A/sr unknown
- 2003-05-27 AU AU2003240827A patent/AU2003240827A1/en not_active Abandoned
- 2003-05-27 US US10/515,372 patent/US8906838B2/en active Active
- 2003-05-27 TW TW092114287A patent/TWI330766B/zh not_active IP Right Cessation
- 2003-05-27 JP JP2004511911A patent/JP4330529B2/ja not_active Expired - Fee Related
- 2003-05-27 EP EP03731423A patent/EP1512050A2/en not_active Withdrawn
- 2003-05-27 CN CN038130262A patent/CN1659480A/zh active Pending
- 2003-05-27 CN CN2011100761494A patent/CN102135735A/zh active Pending
- 2003-05-27 WO PCT/US2003/016829 patent/WO2003104901A2/en not_active Ceased
- 2003-06-06 MY MYPI20032124A patent/MY142745A/en unknown
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2004
- 2004-11-29 ZA ZA200409622A patent/ZA200409622B/xx unknown
- 2004-12-06 IN IN2744CH2004 patent/IN2004CH02744A/en unknown
- 2004-12-06 IL IL165581A patent/IL165581A/en active IP Right Grant
- 2004-12-07 IN IN2762CH2004 patent/IN2004CH02762A/en unknown
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2005
- 2005-01-06 NO NO20050075A patent/NO20050075L/no not_active Application Discontinuation
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9340760B2 (en) | 2009-02-27 | 2016-05-17 | Advanced Technology Materials, Inc. | Non-amine post-CMP composition and method of use |
| CN103958640A (zh) * | 2011-10-21 | 2014-07-30 | 高级技术材料公司 | 无胺cmp后组合物及其使用方法 |
| CN103958640B (zh) * | 2011-10-21 | 2016-05-18 | 安格斯公司 | 无胺cmp后组合物及其使用方法 |
| CN105869997A (zh) * | 2011-10-21 | 2016-08-17 | 安格斯公司 | 无胺cmp后组合物及其使用方法 |
| CN106057653A (zh) * | 2015-04-17 | 2016-10-26 | 台湾积体电路制造股份有限公司 | 半导体装置的制造方法 |
| CN106057653B (zh) * | 2015-04-17 | 2020-08-11 | 台湾积体电路制造股份有限公司 | 半导体装置的制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20050176602A1 (en) | 2005-08-11 |
| NO20050075L (no) | 2005-01-06 |
| IN2004CH02744A (enExample) | 2006-02-10 |
| TW200401958A (en) | 2004-02-01 |
| BR0311830A (pt) | 2005-03-29 |
| PL207297B1 (pl) | 2010-11-30 |
| RS106104A (sr) | 2007-04-10 |
| AU2003240827A8 (en) | 2003-12-22 |
| ZA200409622B (en) | 2006-05-31 |
| KR100958068B1 (ko) | 2010-05-14 |
| US8906838B2 (en) | 2014-12-09 |
| CA2488737A1 (en) | 2003-12-18 |
| WO2003104901A2 (en) | 2003-12-18 |
| AU2003240827A1 (en) | 2003-12-22 |
| KR20050012770A (ko) | 2005-02-02 |
| JP4330529B2 (ja) | 2009-09-16 |
| PL374021A1 (en) | 2005-09-19 |
| JP2005529363A (ja) | 2005-09-29 |
| IN2004CH02762A (enExample) | 2006-02-10 |
| CN1659480A (zh) | 2005-08-24 |
| WO2003104901A3 (en) | 2004-03-18 |
| EP1512050A2 (en) | 2005-03-09 |
| MY142745A (en) | 2010-12-31 |
| TWI330766B (en) | 2010-09-21 |
| IL165581A (en) | 2009-06-15 |
| IL165581A0 (en) | 2006-01-15 |
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Application publication date: 20110727 |