NO20050075L - Mikroelektronikkrengjoring og antireflektive beleggfjernersammensetninger - Google Patents

Mikroelektronikkrengjoring og antireflektive beleggfjernersammensetninger

Info

Publication number
NO20050075L
NO20050075L NO20050075A NO20050075A NO20050075L NO 20050075 L NO20050075 L NO 20050075L NO 20050075 A NO20050075 A NO 20050075A NO 20050075 A NO20050075 A NO 20050075A NO 20050075 L NO20050075 L NO 20050075L
Authority
NO
Norway
Prior art keywords
reflective coating
cleaning
coating remover
remover compositions
microelectronics
Prior art date
Application number
NO20050075A
Other languages
English (en)
Inventor
Chien-Pin Sherman Hsu
Original Assignee
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker Inc filed Critical Mallinckrodt Baker Inc
Publication of NO20050075L publication Critical patent/NO20050075L/no

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/04—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors
    • C23G1/06—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors
    • C23G1/061—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors nitrogen-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/26—Cleaning or polishing of the conductive pattern
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
    • H05K2203/0783—Using solvent, e.g. for cleaning; Regulating solvent content of pastes or coatings for adjusting the viscosity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/12—Using specific substances
    • H05K2203/121—Metallo-organic compounds
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/12—Using specific substances
    • H05K2203/122—Organic non-polymeric compounds, e.g. oil, wax, thiol

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Rengjøringssammensetninger egnet for rengjøring av mikroelektronikkstrukturer som har silisiiundioksid, lav-K eller høy-K dielektriske materialer og kobber- eller aluminummetalliseringer som inneholder et polart organisk løsemiddel utvalgt fra amider, sulfoner, sulfolener, selenoner og mettede alkoholer og en sterk alkalisk base.
NO20050075A 2002-06-07 2005-01-06 Mikroelektronikkrengjoring og antireflektive beleggfjernersammensetninger NO20050075L (no)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US38680002P 2002-06-07 2002-06-07
US40168802P 2002-08-07 2002-08-07
PCT/US2003/016829 WO2003104901A2 (en) 2002-06-07 2003-05-27 Microelectronic cleaning and arc remover compositions

Publications (1)

Publication Number Publication Date
NO20050075L true NO20050075L (no) 2005-01-06

Family

ID=29739917

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20050075A NO20050075L (no) 2002-06-07 2005-01-06 Mikroelektronikkrengjoring og antireflektive beleggfjernersammensetninger

Country Status (17)

Country Link
US (1) US8906838B2 (no)
EP (1) EP1512050A2 (no)
JP (1) JP4330529B2 (no)
KR (1) KR100958068B1 (no)
CN (2) CN1659480A (no)
AU (1) AU2003240827A1 (no)
BR (1) BR0311830A (no)
CA (1) CA2488737A1 (no)
IL (1) IL165581A (no)
IN (2) IN2004CH02744A (no)
MY (1) MY142745A (no)
NO (1) NO20050075L (no)
PL (1) PL207297B1 (no)
RS (1) RS106104A (no)
TW (1) TWI330766B (no)
WO (1) WO2003104901A2 (no)
ZA (1) ZA200409622B (no)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7208049B2 (en) * 2003-10-20 2007-04-24 Air Products And Chemicals, Inc. Process solutions containing surfactants used as post-chemical mechanical planarization treatment
CN101833251B (zh) * 2004-02-11 2013-11-13 安万托特性材料股份有限公司 含有卤素含氧酸、其盐及其衍生物的微电子清洗组合物及清洗方法
US8338087B2 (en) * 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
US7867779B2 (en) 2005-02-03 2011-01-11 Air Products And Chemicals, Inc. System and method comprising same for measurement and/or analysis of particles in gas stream
US7923424B2 (en) * 2005-02-14 2011-04-12 Advanced Process Technologies, Llc Semiconductor cleaning using superacids
WO2006107517A2 (en) * 2005-04-04 2006-10-12 Mallinckrodt Baker, Inc. Composition for cleaning ion implanted photoresist in front end of line applications
CN102981377B (zh) * 2005-06-07 2014-11-12 高级技术材料公司 金属和电介质相容的牺牲性抗反射涂层清洗及去除组合物
KR101152139B1 (ko) 2005-12-06 2012-06-15 삼성전자주식회사 표시 장치용 세정제 및 이를 사용하는 박막 트랜지스터표시판의 제조 방법
KR101349491B1 (ko) * 2005-12-20 2014-01-08 미츠비시 가스 가가쿠 가부시키가이샤 배선 기판의 잔사 제거용 조성물 및 세정 방법
TWI449784B (zh) * 2006-12-21 2014-08-21 Advanced Tech Materials 用以移除蝕刻後殘餘物之液體清洗劑
US20080149884A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing
US8110508B2 (en) 2007-11-22 2012-02-07 Samsung Electronics Co., Ltd. Method of forming a bump structure using an etching composition for an under bump metallurgy layer
CN101487993A (zh) * 2008-01-18 2009-07-22 安集微电子（上海）有限公司 一种厚膜光刻胶清洗剂
US8168577B2 (en) * 2008-02-29 2012-05-01 Avantor Performance Materials, Inc. Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion
JP2009231354A (ja) * 2008-03-19 2009-10-08 Fujifilm Corp 半導体デバイス用洗浄液、および洗浄方法
CN101359189B (zh) * 2008-09-17 2011-04-27 电子科技大学 正性光敏聚酰亚胺光刻胶用显影液
JP2012515444A (ja) * 2009-01-14 2012-07-05 アファントル ペルフォルマンス マテリアルズ ベー．フェー． ウエハーのシート抵抗および／または光電池の出力密度を増大するための溶液
BRPI1008034A2 (pt) * 2009-02-25 2016-03-15 Avantor Performance Mat Inc composições removedoras para limpeza de fotorresistor implantado por íons de discos de silício de dispositivos semicondutores
SG173834A1 (en) * 2009-02-25 2011-09-29 Avantor Performance Mat Inc Multipurpose acidic, organic solvent based microelectronic cleaning composition
US8754021B2 (en) 2009-02-27 2014-06-17 Advanced Technology Materials, Inc. Non-amine post-CMP composition and method of use
CN101901784B (zh) * 2010-07-21 2012-05-30 河北工业大学 钽化学机械抛光工序中的表面清洗方法
CN101901782B (zh) * 2010-07-21 2011-12-14 河北工业大学 极大规模集成电路多层布线碱性抛光后防氧化方法
EP2768920A4 (en) * 2011-10-21 2015-06-03 Advanced Tech Materials AMIN FREE POST-KMP COMPOSITION AND METHOD OF USE THEREOF
CN103809394B (zh) * 2012-11-12 2019-12-31 安集微电子科技（上海）股份有限公司 一种去除光阻蚀刻残留物的清洗液
US9460934B2 (en) 2013-03-15 2016-10-04 Globalfoundries Inc. Wet strip process for an antireflective coating layer
SG11201603122XA (en) 2013-10-21 2016-05-30 Fujifilm Electronic Materials Cleaning formulations for removing residues on surfaces
JP2015108041A (ja) * 2013-12-03 2015-06-11 ダイキン工業株式会社 洗浄用組成物
KR101964901B1 (ko) 2013-12-06 2019-04-02 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 표면 잔류물 제거용 세정 제형
US9803162B2 (en) 2014-04-10 2017-10-31 Mitsubishi Gas Chemical Company, Inc. Liquid composition for cleaning semiconductor device, and method for cleaning semiconductor device
US9570285B2 (en) * 2015-04-17 2017-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning composition and methods thereof
TWI705132B (zh) 2015-10-08 2020-09-21 日商三菱瓦斯化學股份有限公司 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法
TWI816635B (zh) 2015-10-15 2023-10-01 日商三菱瓦斯化學股份有限公司 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法
US10988718B2 (en) 2016-03-09 2021-04-27 Entegris, Inc. Tungsten post-CMP cleaning composition
CN107313055A (zh) * 2017-07-19 2017-11-03 马爱连 一种金属油污清洗剂及其制备方法和使用方法
WO2019186624A1 (ja) * 2018-03-26 2019-10-03 三菱瓦斯化学株式会社 エッチング液
IL301529A (en) 2018-03-28 2023-05-01 Fujifilm Electronic Mat Usa Inc cleaning products
JPWO2022163350A1 (no) * 2021-01-29 2022-08-04

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673099A (en) * 1970-10-19 1972-06-27 Bell Telephone Labor Inc Process and composition for stripping cured resins from substrates
US4744834A (en) * 1986-04-30 1988-05-17 Noor Haq Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide
US5037724A (en) * 1988-02-25 1991-08-06 Hoya Corporation Peeling solution for photo- or electron beam-sensitive resin
US6492311B2 (en) * 1990-11-05 2002-12-10 Ekc Technology, Inc. Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process
US5308745A (en) * 1992-11-06 1994-05-03 J. T. Baker Inc. Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins
US5561105A (en) * 1995-05-08 1996-10-01 Ocg Microelectronic Materials, Inc. Chelating reagent containing photoresist stripper composition
JPH1055993A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
JPH1116882A (ja) * 1997-06-19 1999-01-22 Toray Fine Chem Co Ltd フォトレジスト剥離用組成物
JPH1167632A (ja) * 1997-08-18 1999-03-09 Mitsubishi Gas Chem Co Inc 半導体装置用洗浄剤
JPH11323394A (ja) * 1998-05-14 1999-11-26 Texas Instr Japan Ltd 半導体素子製造用洗浄剤及びそれを用いた半導体素子の製造方法
JP3606738B2 (ja) * 1998-06-05 2005-01-05 東京応化工業株式会社 アッシング後の処理液およびこれを用いた処理方法
JP4224652B2 (ja) * 1999-03-08 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離液およびそれを用いたレジストの剥離方法
US6475966B1 (en) * 2000-02-25 2002-11-05 Shipley Company, L.L.C. Plasma etching residue removal
US6531436B1 (en) * 2000-02-25 2003-03-11 Shipley Company, L.L.C. Polymer removal
MY129673A (en) * 2000-03-20 2007-04-30 Avantor Performance Mat Inc Method and composition for removing sodium-containing material from microcircuit substrates
US6274296B1 (en) * 2000-06-08 2001-08-14 Shipley Company, L.L.C. Stripper pretreatment
US6455479B1 (en) * 2000-08-03 2002-09-24 Shipley Company, L.L.C. Stripping composition
US6599370B2 (en) 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
US6773873B2 (en) * 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates

Also Published As

Publication number Publication date
PL374021A1 (en) 2005-09-19
WO2003104901A2 (en) 2003-12-18
WO2003104901A3 (en) 2004-03-18
TWI330766B (en) 2010-09-21
JP4330529B2 (ja) 2009-09-16
MY142745A (en) 2010-12-31
US8906838B2 (en) 2014-12-09
KR100958068B1 (ko) 2010-05-14
IL165581A (en) 2009-06-15
RS106104A (en) 2007-04-10
IL165581A0 (en) 2006-01-15
JP2005529363A (ja) 2005-09-29
AU2003240827A1 (en) 2003-12-22
TW200401958A (en) 2004-02-01
EP1512050A2 (en) 2005-03-09
PL207297B1 (pl) 2010-11-30
IN2004CH02744A (no) 2006-02-10
ZA200409622B (en) 2006-05-31
AU2003240827A8 (en) 2003-12-22
BR0311830A (pt) 2005-03-29
CN1659480A (zh) 2005-08-24
CA2488737A1 (en) 2003-12-18
US20050176602A1 (en) 2005-08-11
CN102135735A (zh) 2011-07-27
KR20050012770A (ko) 2005-02-02
IN2004CH02762A (no) 2006-02-10

Similar Documents

Publication Publication Date Title
NO20050075L (no) Mikroelektronikkrengjoring og antireflektive beleggfjernersammensetninger
NO20050076L (no) Mikroelektronikk-rengjoringssammensetninger som inneholder oksidasjonsmidler og organiske losemidler
TW200420755A (en) Compositions for removing etching residue and use thereof
TW200639595A (en) Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices
MY130394A (en) Aqueous stripping and cleaning composition
MY127401A (en) Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
TW200702427A (en) Etchant, method for fabricating interconnection line using the etchant, and method for fabricating thin film transistor substrate using the etchant
TW200619379A (en) Non-aqueous, non-corrosive microelectronic cleaning compositions containing polymeric corrosion inhibitors
WO2002004233A8 (en) Compositions for cleaning organic and plasma etched residues for semiconductor devices
ATE471537T1 (de) Nichtwässrige mikroelektronische reinigungszusammensetzungen mit fructose
WO2004059700A3 (en) Photoresist removal
SG126052A1 (en) Composition for photoresist stripping solution andprocess of photoresist stripping
BRPI0512811A (pt) configuração dinámica de ip para um equipamento terminal fixado em um dispositivo sem fio
MY143399A (en) Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
ATE420941T1 (de) Chemische spülzusammensetzung
WO2002018503A3 (en) Paint stripping compositions
ATE492096T1 (de) Drahtlose knotenvorrichtung und drahtloses mehrstrom-lan-system
TW200617623A (en) Composition for removing a photoresist residue and polymer residue, and residue removal process using same
TW200629012A (en) Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
DE602006001544D1 (de) Filtern von Paketen
TW200621974A (en) Cleaning composition and method
ATE355699T1 (de) RUFNUMMERNPORTABILITÄT IN ßVOICE OVER IPß NETZEN
TH64590A (th) สารผสมสำหรับทำความสะอาดไมโครอิเล็กทรอนิกที่มีสารออกซิไดซ์ และตัวทำละลายอินทรีย์
ATE323360T1 (de) Verfahren und vorrichtungen zur umordnung von paketen in einem netzwerkprozessor

Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application