JP2005513779A - ウエハレベル用の二重硬化b−ステージ化可能なアンダーフィル - Google Patents
ウエハレベル用の二重硬化b−ステージ化可能なアンダーフィル Download PDFInfo
- Publication number
- JP2005513779A JP2005513779A JP2003553611A JP2003553611A JP2005513779A JP 2005513779 A JP2005513779 A JP 2005513779A JP 2003553611 A JP2003553611 A JP 2003553611A JP 2003553611 A JP2003553611 A JP 2003553611A JP 2005513779 A JP2005513779 A JP 2005513779A
- Authority
- JP
- Japan
- Prior art keywords
- composition
- underfill
- curing
- compounds
- silicon wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 claims abstract description 105
- 239000000463 material Substances 0.000 claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 30
- 239000004593 Epoxy Substances 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 12
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 claims description 7
- 150000008064 anhydrides Chemical class 0.000 claims description 7
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims description 4
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 4
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 claims description 4
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical class [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 claims description 4
- 125000000490 cinnamyl group Chemical group C(C=CC1=CC=CC=C1)* 0.000 claims description 3
- 125000002723 alicyclic group Chemical group 0.000 claims description 2
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical class O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 claims 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims 2
- 229910000679 solder Inorganic materials 0.000 description 23
- 239000000758 substrate Substances 0.000 description 22
- 235000012431 wafers Nutrition 0.000 description 18
- 239000003795 chemical substances by application Substances 0.000 description 16
- 239000002904 solvent Substances 0.000 description 13
- 239000011521 glass Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 229920000647 polyepoxide Polymers 0.000 description 12
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- -1 acrylic compound Chemical class 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 8
- 238000009472 formulation Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229920002472 Starch Polymers 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000008107 starch Substances 0.000 description 7
- 235000019698 starch Nutrition 0.000 description 7
- 229920001187 thermosetting polymer Polymers 0.000 description 7
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 6
- 230000004907 flux Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000008393 encapsulating agent Substances 0.000 description 5
- 230000005496 eutectics Effects 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 150000003254 radicals Chemical class 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 150000001412 amines Chemical class 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 4
- 239000003999 initiator Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 2
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Natural products CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 2
- OYHQOLUKZRVURQ-HZJYTTRNSA-N Linoleic acid Chemical compound CCCCC\C=C/C\C=C/CCCCCCCC(O)=O OYHQOLUKZRVURQ-HZJYTTRNSA-N 0.000 description 2
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000005642 Oleic acid Substances 0.000 description 2
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000002318 adhesion promoter Substances 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- PYMYPHUHKUWMLA-LMVFSUKVSA-N aldehydo-D-ribose Chemical compound OC[C@@H](O)[C@@H](O)[C@@H](O)C=O PYMYPHUHKUWMLA-LMVFSUKVSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- TVIDDXQYHWJXFK-UHFFFAOYSA-N dodecanedioic acid Chemical compound OC(=O)CCCCCCCCCCC(O)=O TVIDDXQYHWJXFK-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002118 epoxides Chemical group 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 2
- OYHQOLUKZRVURQ-IXWMQOLASA-N linoleic acid Natural products CCCCC\C=C/C\C=C\CCCCCCCC(O)=O OYHQOLUKZRVURQ-IXWMQOLASA-N 0.000 description 2
- 235000020778 linoleic acid Nutrition 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- 0 *NC(OCC=Cc1ccccc1)=O Chemical compound *NC(OCC=Cc1ccccc1)=O 0.000 description 1
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 description 1
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- 150000003923 2,5-pyrrolediones Chemical class 0.000 description 1
- AVTLBBWTUPQRAY-UHFFFAOYSA-N 2-(2-cyanobutan-2-yldiazenyl)-2-methylbutanenitrile Chemical compound CCC(C)(C#N)N=NC(C)(CC)C#N AVTLBBWTUPQRAY-UHFFFAOYSA-N 0.000 description 1
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 1
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- OEPOKWHJYJXUGD-UHFFFAOYSA-N 2-(3-phenylmethoxyphenyl)-1,3-thiazole-4-carbaldehyde Chemical compound O=CC1=CSC(C=2C=C(OCC=3C=CC=CC=3)C=CC=2)=N1 OEPOKWHJYJXUGD-UHFFFAOYSA-N 0.000 description 1
- KUBDPQJOLOUJRM-UHFFFAOYSA-N 2-(chloromethyl)oxirane;4-[2-(4-hydroxyphenyl)propan-2-yl]phenol Chemical compound ClCC1CO1.C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 KUBDPQJOLOUJRM-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- BNRFUAOFPVNBRS-UHFFFAOYSA-N 3-[(4-methyl-7-oxabicyclo[4.1.0]heptan-3-yl)methyl]-7-oxabicyclo[4.1.0]heptane-3-carboxylic acid Chemical compound C1CC2OC2CC1(C(O)=O)CC1CC2OC2CC1C BNRFUAOFPVNBRS-UHFFFAOYSA-N 0.000 description 1
- HHEORJZSUXVOSI-UHFFFAOYSA-N 3-[1,3-bis(oxiran-2-ylmethoxy)propan-2-yloxy]propane-1,2-diol Chemical compound C1OC1COCC(OCC(O)CO)COCC1CO1 HHEORJZSUXVOSI-UHFFFAOYSA-N 0.000 description 1
- YAXXOCZAXKLLCV-UHFFFAOYSA-N 3-dodecyloxolane-2,5-dione Chemical compound CCCCCCCCCCCCC1CC(=O)OC1=O YAXXOCZAXKLLCV-UHFFFAOYSA-N 0.000 description 1
- OECTYKWYRCHAKR-UHFFFAOYSA-N 4-vinylcyclohexene dioxide Chemical compound C1OC1C1CC2OC2CC1 OECTYKWYRCHAKR-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 1
- YXALYBMHAYZKAP-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]heptan-4-ylmethyl 7-oxabicyclo[4.1.0]heptane-4-carboxylate Chemical compound C1CC2OC2CC1C(=O)OCC1CC2OC2CC1 YXALYBMHAYZKAP-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- XTTMHLPKQJXZKC-UHFFFAOYSA-N CCO[O](CC)S(CCCNC(OCC=Cc1ccccc1)=O)OCC Chemical compound CCO[O](CC)S(CCCNC(OCC=Cc1ccccc1)=O)OCC XTTMHLPKQJXZKC-UHFFFAOYSA-N 0.000 description 1
- QKLRZFXPDQBUFE-VMPITWQZSA-N CNC(OC/C=C/c1ccccc1)=O Chemical compound CNC(OC/C=C/c1ccccc1)=O QKLRZFXPDQBUFE-VMPITWQZSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GUBGYTABKSRVRQ-CUHNMECISA-N D-Cellobiose Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1O[C@@H]1[C@@H](CO)OC(O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-CUHNMECISA-N 0.000 description 1
- GUBGYTABKSRVRQ-UHFFFAOYSA-N D-Cellobiose Natural products OCC1OC(OC2C(O)C(O)C(O)OC2CO)C(O)C(O)C1O GUBGYTABKSRVRQ-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 229920002732 Polyanhydride Polymers 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 229920006397 acrylic thermoplastic Polymers 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- PYMYPHUHKUWMLA-UHFFFAOYSA-N arabinose Natural products OCC(O)C(O)C(O)C=O PYMYPHUHKUWMLA-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- SRBFZHDQGSBBOR-UHFFFAOYSA-N beta-D-Pyranose-Lyxose Natural products OC1COC(O)C(O)C1O SRBFZHDQGSBBOR-UHFFFAOYSA-N 0.000 description 1
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 1
- 239000004842 bisphenol F epoxy resin Substances 0.000 description 1
- NTXGQCSETZTARF-UHFFFAOYSA-N buta-1,3-diene;prop-2-enenitrile Chemical compound C=CC=C.C=CC#N NTXGQCSETZTARF-UHFFFAOYSA-N 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- KDMCQAXHWIEEDE-UHFFFAOYSA-L cobalt(2+);7,7-dimethyloctanoate Chemical compound [Co+2].CC(C)(C)CCCCCC([O-])=O.CC(C)(C)CCCCCC([O-])=O KDMCQAXHWIEEDE-UHFFFAOYSA-L 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000011353 cycloaliphatic epoxy resin Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- BQQUFAMSJAKLNB-UHFFFAOYSA-N dicyclopentadiene diepoxide Chemical compound C12C(C3OC33)CC3C2CC2C1O2 BQQUFAMSJAKLNB-UHFFFAOYSA-N 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical class C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N formaldehyde Substances O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
- LRDFRRGEGBBSRN-UHFFFAOYSA-N isobutyronitrile Chemical compound CC(C)C#N LRDFRRGEGBBSRN-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 239000006254 rheological additive Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- JIYNFFGKZCOPKN-UHFFFAOYSA-N sbb061129 Chemical compound O=C1OC(=O)C2C1C1C=C(C)C2C1 JIYNFFGKZCOPKN-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000012056 semi-solid material Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 239000010455 vermiculite Substances 0.000 description 1
- 229910052902 vermiculite Inorganic materials 0.000 description 1
- 235000019354 vermiculite Nutrition 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 239000010456 wollastonite Substances 0.000 description 1
- 229910052882 wollastonite Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83856—Pre-cured adhesive, i.e. B-stage adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01056—Barium [Ba]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Wire Bonding (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Polymerisation Methods In General (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Processes Of Treating Macromolecular Substances (AREA)
- Silicon Polymers (AREA)
- Solid Fuels And Fuel-Associated Substances (AREA)
- Furnace Charging Or Discharging (AREA)
- Looms (AREA)
Abstract
Description
Claims (12)
- ウエハの一つの面上に堆積したB−ステージ化可能なアンダーフィル材料を有するシリコン・ウエハであって、前記B−ステージ化可能なアンダーフィルは、二つの化学組成物、すなわち第1組成物および第2組成物を含み、より低い硬化温度を有する組成物である第1組成物が、より高い硬化温度を有する組成物である第2組成物を硬化させずに硬化することできるように十分離れた硬化温度または硬化温度範囲を有し、第1組成物が硬化してしまっても第2組成物は硬化しないことを特徴とする、シリコン・ウエハ。
- 第1および第2組成物の硬化温度が少なくとも30℃離れている請求項1に記載のシリコン・ウエハ。
- 第1組成物が、アクリル化合物、脂環式エポキシ化合物、ビスマレイミド化合物並びにビニルエーテル、ビニルシラン、スチレン系またはシンナミル化合物と組合せたビスマレイミド化合物からなる群から選択される請求項1に記載のシリコン・ウエハ。
- 第2組成物がエポキシ化合物である請求項1に記載のシリコン・ウエハ。
- 第2組成物がエポキシ化合物およびイミダゾール/無水物付加物である請求項4に記載のシリコン・ウエハ。
- イミダゾール/無水物付加物が、1部の1,2,4,5−ベンゼンテトラカルボン酸無水物と4部の2−フェニル−4−メチルイミダゾールとの錯体、または1部の1,2,4,5−ベンゼンテトラカルボン酸2無水物と2部の2−フェニル−4−メチルイミダゾールとの錯体である、請求項5に記載のシリコン・ウエハ。
- より低い硬化温度を有する組成物である第1組成物が、より高い硬化温度を有する組成物である第2組成物を硬化させずに硬化することができるように十分離れた硬化温度または硬化温度範囲を有する二つの化学組成物、すなわち第1組成物および第2組成物を含むB−ステージ化可能なアンダーフィル組成物。
- 第1および第2組成物の硬化温度が少なくとも30℃離れている請求項7に記載のB−ステージ化可能なアンダーフィル組成物。
- 第1組成物が、アクリル化合物、脂環式エポキシ化合物、ビスマレイミド化合物並びにビニルエーテル、ビニルシラン、スチレン系またはシンナミル化合物と組合せたビスマレイミド化合物からなる群から選択される請求項7に記載のB−ステージ化可能なアンダーフィル組成物。
- 第2組成物がエポキシ化合物である請求項7に記載のB−ステージ化可能なアンダーフィル組成物。
- 第2組成物がイミダゾール/無水物付加物を有するエポキシ化合物である請求項10に記載のB−ステージ化可能なアンダーフィル組成物。
- イミダゾール/無水物付加物が、1部の1,2,4,5−ベンゼンテトラカルボン酸無水物と4部の2−フェニル−4−メチルイミダゾールとの錯体、または1部の1,2,4,5−ベンゼンテトラカルボン酸2無水物と2部の2−フェニル−4−メチルイミダゾールとの錯体である、請求項9に記載のB−ステージ化可能なアンダーフィル組成物。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/020,638 US6833629B2 (en) | 2001-12-14 | 2001-12-14 | Dual cure B-stageable underfill for wafer level |
PCT/US2002/037208 WO2003052813A2 (en) | 2001-12-14 | 2002-11-19 | Dual cure b-stageable underfill for wafer level |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005513779A true JP2005513779A (ja) | 2005-05-12 |
JP2005513779A5 JP2005513779A5 (ja) | 2006-01-12 |
JP4299140B2 JP4299140B2 (ja) | 2009-07-22 |
Family
ID=21799738
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003553611A Expired - Fee Related JP4299140B2 (ja) | 2001-12-14 | 2002-11-19 | ウエハレベル用の二重硬化b−ステージ化可能なアンダーフィル |
Country Status (11)
Country | Link |
---|---|
US (1) | US6833629B2 (ja) |
EP (1) | EP1461829B2 (ja) |
JP (1) | JP4299140B2 (ja) |
KR (1) | KR100932998B1 (ja) |
CN (1) | CN1307701C (ja) |
AT (1) | ATE383655T1 (ja) |
AU (1) | AU2002366498A1 (ja) |
DE (1) | DE60224581T2 (ja) |
DK (1) | DK1461829T3 (ja) |
TW (1) | TWI238476B (ja) |
WO (1) | WO2003052813A2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013535098A (ja) * | 2010-06-08 | 2013-09-09 | ヘンケル コーポレイション | パルスuv光源によるウエハ裏面被覆方法 |
JP2016506978A (ja) * | 2013-01-23 | 2016-03-07 | ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング | アンダーフィル組成物およびそれを使用したパッケージング工程 |
WO2018030315A1 (ja) * | 2016-08-08 | 2018-02-15 | 太陽インキ製造株式会社 | 半導体用封止材 |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6833629B2 (en) | 2001-12-14 | 2004-12-21 | National Starch And Chemical Investment Holding Corporation | Dual cure B-stageable underfill for wafer level |
US20030129438A1 (en) * | 2001-12-14 | 2003-07-10 | Becker Kevin Harris | Dual cure B-stageable adhesive for die attach |
US20030162911A1 (en) * | 2002-01-31 | 2003-08-28 | Yue Xiao | No flow underfill composition |
US7846778B2 (en) * | 2002-02-08 | 2010-12-07 | Intel Corporation | Integrated heat spreader, heat sink or heat pipe with pre-attached phase change thermal interface material and method of making an electronic assembly |
US7473995B2 (en) * | 2002-03-25 | 2009-01-06 | Intel Corporation | Integrated heat spreader, heat sink or heat pipe with pre-attached phase change thermal interface material and method of making an electronic assembly |
US20060194064A1 (en) * | 2002-03-01 | 2006-08-31 | Xiao Allison Y | Underfill encapsulant for wafer packaging and method for its application |
US7037399B2 (en) * | 2002-03-01 | 2006-05-02 | National Starch And Chemical Investment Holding Corporation | Underfill encapsulant for wafer packaging and method for its application |
US20050049334A1 (en) * | 2003-09-03 | 2005-03-03 | Slawomir Rubinsztain | Solvent-modified resin system containing filler that has high Tg, transparency and good reliability in wafer level underfill applications |
US7022410B2 (en) * | 2003-12-16 | 2006-04-04 | General Electric Company | Combinations of resin compositions and methods of use thereof |
US20060147719A1 (en) * | 2002-11-22 | 2006-07-06 | Slawomir Rubinsztajn | Curable composition, underfill, and method |
US7176044B2 (en) | 2002-11-25 | 2007-02-13 | Henkel Corporation | B-stageable die attach adhesives |
US20040158008A1 (en) * | 2003-02-06 | 2004-08-12 | Xiping He | Room temperature printable adhesive paste |
US6885108B2 (en) * | 2003-03-18 | 2005-04-26 | Micron Technology, Inc. | Protective layers formed on semiconductor device components so as to reduce or eliminate the occurrence of delamination thereof and cracking therein |
CN101245199B (zh) | 2003-09-30 | 2010-11-24 | 关西涂料株式会社 | 涂料组合物以及涂膜形成方法 |
KR100975088B1 (ko) | 2003-11-21 | 2010-08-11 | 로드코포레이션 | 이중 단계 웨이퍼 적용 언더필 |
US6908789B1 (en) * | 2003-12-15 | 2005-06-21 | Intel Corporation | Method of making a microelectronic assembly |
US7560519B2 (en) * | 2004-06-02 | 2009-07-14 | Lord Corporation | Dual-stage wafer applied underfills |
DE102005046280B4 (de) | 2005-09-27 | 2007-11-08 | Infineon Technologies Ag | Halbleiterbauteil mit einem Halbleiterchip sowie Verfahren zur Herstellung desselben |
US20080039542A1 (en) * | 2006-08-11 | 2008-02-14 | General Electric Company | Composition and associated method |
US20080039560A1 (en) * | 2006-08-11 | 2008-02-14 | General Electric Company | Syneretic composition, associated method and article |
US20080039608A1 (en) * | 2006-08-11 | 2008-02-14 | General Electric Company | Oxetane composition, associated method and article |
US20080121845A1 (en) * | 2006-08-11 | 2008-05-29 | General Electric Company | Oxetane composition, associated method and article |
KR100792950B1 (ko) * | 2007-01-19 | 2008-01-08 | 엘에스전선 주식회사 | 반도체 패키징 방법 |
TW200948888A (en) * | 2008-04-16 | 2009-12-01 | Henkel Corp | Flow controllable B-stageable composition |
WO2009141949A1 (ja) * | 2008-05-23 | 2009-11-26 | パナソニック株式会社 | 実装構造体の製造方法、および実装構造体 |
US9093448B2 (en) | 2008-11-25 | 2015-07-28 | Lord Corporation | Methods for protecting a die surface with photocurable materials |
JP5318222B2 (ja) * | 2008-11-25 | 2013-10-16 | ロード コーポレイション | 光硬化性材料でダイ表面を保護する方法 |
DE112014003568T5 (de) * | 2013-08-02 | 2016-04-14 | Alpha Metals, Inc. | Doppelseitiges Verstärkungsflussmittel zur Einkapselung |
EP3359603A1 (en) * | 2015-10-07 | 2018-08-15 | Henkel IP & Holding GmbH | Formulations and the use for 3d tsv packages |
Family Cites Families (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3746686A (en) | 1971-07-12 | 1973-07-17 | Shell Oil Co | Process for curing polyepoxides with polycarboxylic acid salts of an imidazole compound and compositions thereof |
JPS535920B2 (ja) | 1974-06-03 | 1978-03-02 | ||
JPS592445B2 (ja) | 1978-11-10 | 1984-01-18 | 三菱電機株式会社 | 耐熱性樹脂の製造法 |
US4401499A (en) * | 1980-06-09 | 1983-08-30 | Sumitomo Bakelite Company Limited | Crosslinked resin of epoxy compound and isocyanate and process for producing same |
JPS5718815A (en) | 1980-07-04 | 1982-01-30 | Mitsubishi Heavy Ind Ltd | Bearing device |
US4426243A (en) † | 1981-12-01 | 1984-01-17 | Illinois Tool Works Inc. | Room-temperature-curable, quick-setting acrylic/epoxy adhesives and methods of bonding |
JPS59197154A (ja) | 1983-04-22 | 1984-11-08 | Hitachi Ltd | 半導体装置およびその製造法 |
ATE45368T1 (de) † | 1984-04-28 | 1989-08-15 | Ciba Geigy Ag | Haertbare zusammensetzungen. |
JPS61237436A (ja) | 1985-04-15 | 1986-10-22 | Toshiba Chem Corp | 半導体素子の製造方法 |
JPS62275123A (ja) | 1986-05-23 | 1987-11-30 | Toray Ind Inc | プリプレグ用樹脂組成物 |
JPS6381187A (ja) † | 1986-09-25 | 1988-04-12 | Ibiden Co Ltd | 熱硬化性接着シ−ト |
JPS63154780A (ja) † | 1986-12-18 | 1988-06-28 | Ibiden Co Ltd | 接着剤組成物及びその接着剤としての使用方法 |
US4816531A (en) | 1987-02-05 | 1989-03-28 | Shell Oil Company | Bismaleimide resin composition containing epoxy resin and a phenolic curing agent therefor |
US5082880A (en) * | 1988-09-12 | 1992-01-21 | Mitsui Toatsu Chemicals, Inc. | Semiconductor sealing composition containing epoxy resin and polymaleimide |
US5208188A (en) | 1989-10-02 | 1993-05-04 | Advanced Micro Devices, Inc. | Process for making a multilayer lead frame assembly for an integrated circuit structure and multilayer integrated circuit die package formed by such process |
US5081167A (en) | 1990-07-16 | 1992-01-14 | Shell Oil Company | Cyanamide-cured maleimide/epoxy resin blend |
US5128746A (en) * | 1990-09-27 | 1992-07-07 | Motorola, Inc. | Adhesive and encapsulant material with fluxing properties |
US5261156A (en) † | 1991-02-28 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of electrically connecting an integrated circuit to an electric device |
DE4130329A1 (de) | 1991-09-12 | 1993-03-18 | Bayer Ag | Waermehaertbare reaktionsharzgemische, ein verfahren zu ihrer herstellung und die verwendung zur herstellung von press-massen und formkoerpern |
US5728633A (en) * | 1992-01-23 | 1998-03-17 | Jacobs; Richard L. | Interpenetrating network compositions and structures |
US5510633A (en) | 1994-06-08 | 1996-04-23 | Xerox Corporation | Porous silicon light emitting diode arrays and method of fabrication |
US5579573A (en) * | 1994-10-11 | 1996-12-03 | Ford Motor Company | Method for fabricating an undercoated chip electrically interconnected to a substrate |
US5494981A (en) * | 1995-03-03 | 1996-02-27 | Minnesota Mining And Manufacturing Company | Epoxy-cyanate ester compositions that form interpenetrating networks via a Bronsted acid |
US5654081A (en) * | 1995-07-05 | 1997-08-05 | Ford Motor Company | Integrated circuit assembly with polymeric underfill body |
CN1057402C (zh) * | 1996-03-01 | 2000-10-11 | 台湾通用器材股份有限公司 | 半导体的封装方法 |
JP2891184B2 (ja) | 1996-06-13 | 1999-05-17 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US5756405A (en) * | 1996-09-10 | 1998-05-26 | International Business Machines Corporation | Technique for forming resin-impregnated fiberglass sheets |
WO1998028788A1 (en) * | 1996-12-24 | 1998-07-02 | Nitto Denko Corporation | Manufacture of semiconductor device |
JPH1129748A (ja) * | 1997-05-12 | 1999-02-02 | Fujitsu Ltd | 接着剤、接着方法及び実装基板の組み立て体 |
AU8502798A (en) * | 1997-07-21 | 1999-02-10 | Aguila Technologies, Inc. | Semiconductor flip-chip package and method for the fabrication thereof |
RU2195474C2 (ru) | 1997-07-24 | 2002-12-27 | Локтайт Корпорейшн | Композиция термореактивной смолы (ее варианты), конструкция крепления полупроводникового устройства и способ изготовления полупроводникового устройства с использованием композиции термореактивной смолы |
US6300686B1 (en) * | 1997-10-02 | 2001-10-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor chip bonded to a thermal conductive sheet having a filled through hole for electrical connection |
US20010020071A1 (en) | 1997-10-10 | 2001-09-06 | Capote Miguel Albert | High performance cyanate-bismaleimide-epoxy resin compositions for printed circuits and encapsulants |
WO1999021917A1 (en) * | 1997-10-23 | 1999-05-06 | Ciba Specialty Chemicals Holding Inc. | Hardener for anhydride group-containing polymers |
JP3184485B2 (ja) | 1997-11-06 | 2001-07-09 | 三井金属鉱業株式会社 | 銅張積層板用樹脂組成物、樹脂付き銅箔、多層銅張り積層板および多層プリント配線板 |
US6194490B1 (en) | 1998-02-27 | 2001-02-27 | Vantico, Inc. | Curable composition comprising epoxidized natural oils |
US6228678B1 (en) | 1998-04-27 | 2001-05-08 | Fry's Metals, Inc. | Flip chip with integrated mask and underfill |
US6265776B1 (en) | 1998-04-27 | 2001-07-24 | Fry's Metals, Inc. | Flip chip with integrated flux and underfill |
JP4098403B2 (ja) | 1998-06-01 | 2008-06-11 | 富士通株式会社 | 接着剤、接着方法及び実装基板の組み立て体 |
WO1999067324A1 (en) | 1998-06-22 | 1999-12-29 | Loctite Corporation | Thermosetting resin compositions useful as underfill sealants |
US6350840B1 (en) | 1998-07-02 | 2002-02-26 | National Starch And Chemical Investment Holding Corporation | Underfill encapsulants prepared from allylated amide compounds |
US6057381A (en) | 1998-07-02 | 2000-05-02 | National Starch And Chemical Investment Holding Corporation | Method of making an electronic component using reworkable underfill encapsulants |
US6063828A (en) | 1998-07-02 | 2000-05-16 | National Starch And Chemical Investment Holding Corporation | Underfill encapsulant compositions for use in electronic devices |
AU2165100A (en) | 1998-12-07 | 2000-06-26 | Dexter Corporation, The | Underfill film compositions |
US6331446B1 (en) * | 1999-03-03 | 2001-12-18 | Intel Corporation | Process for underfilling a controlled collapse chip connection (C4) integrated circuit package with an underfill material that is heated to a partial gel state |
US6528345B1 (en) * | 1999-03-03 | 2003-03-04 | Intel Corporation | Process line for underfilling a controlled collapse |
JP2001015551A (ja) * | 1999-06-29 | 2001-01-19 | Toshiba Corp | 半導体装置およびその製造方法 |
JP3562465B2 (ja) | 1999-11-30 | 2004-09-08 | 日立化成工業株式会社 | 接着剤組成物、接着フィルム及び半導体搭載用配線基板 |
JP3601443B2 (ja) | 1999-11-30 | 2004-12-15 | 日立化成工業株式会社 | 接着フィルムとその製造方法、半導体搭載用配線基板及び半導体装置 |
KR20010054743A (ko) | 1999-12-08 | 2001-07-02 | 윤종용 | 이중 언더필 영역을 포함하는 반도체 패키지 |
JP2001205211A (ja) * | 2000-01-28 | 2001-07-31 | Sanyo Electric Co Ltd | プラズマ洗浄装置 |
JP2001323246A (ja) † | 2000-03-07 | 2001-11-22 | Sony Chem Corp | 電極接続用接着剤及びこれを用いた接着方法 |
US6498260B2 (en) * | 2000-03-29 | 2002-12-24 | Georgia Tech Research Corp. | Thermally degradable epoxy underfills for flip-chip applications |
US6441213B1 (en) | 2000-05-18 | 2002-08-27 | National Starch And Chemical Investment Holding Corporation | Adhesion promoters containing silane, carbamate or urea, and donor or acceptor functionality |
US6307001B1 (en) | 2000-05-18 | 2001-10-23 | National Starch And Chemical Investment Holding Corporation | Curable hybrid electron donor compounds containing vinyl ether |
US6555628B2 (en) * | 2000-12-14 | 2003-04-29 | Dow Global Technologies Inc. | Epoxy resins and process for making the same |
US6686425B2 (en) * | 2001-06-08 | 2004-02-03 | Adhesives Research, Inc. | High Tg acrylic polymer and epoxy-containing blend therefor as pressure sensitive adhesive |
US6833629B2 (en) | 2001-12-14 | 2004-12-21 | National Starch And Chemical Investment Holding Corporation | Dual cure B-stageable underfill for wafer level |
-
2001
- 2001-12-14 US US10/020,638 patent/US6833629B2/en not_active Expired - Lifetime
-
2002
- 2002-11-19 DK DK02805072T patent/DK1461829T3/da active
- 2002-11-19 JP JP2003553611A patent/JP4299140B2/ja not_active Expired - Fee Related
- 2002-11-19 WO PCT/US2002/037208 patent/WO2003052813A2/en active IP Right Grant
- 2002-11-19 CN CNB028249372A patent/CN1307701C/zh not_active Expired - Fee Related
- 2002-11-19 AU AU2002366498A patent/AU2002366498A1/en not_active Abandoned
- 2002-11-19 KR KR1020047007746A patent/KR100932998B1/ko active IP Right Grant
- 2002-11-19 AT AT02805072T patent/ATE383655T1/de not_active IP Right Cessation
- 2002-11-19 EP EP02805072.2A patent/EP1461829B2/en not_active Expired - Lifetime
- 2002-11-19 DE DE60224581T patent/DE60224581T2/de not_active Expired - Lifetime
- 2002-12-13 TW TW091136234A patent/TWI238476B/zh active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013535098A (ja) * | 2010-06-08 | 2013-09-09 | ヘンケル コーポレイション | パルスuv光源によるウエハ裏面被覆方法 |
JP2016506978A (ja) * | 2013-01-23 | 2016-03-07 | ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング | アンダーフィル組成物およびそれを使用したパッケージング工程 |
US9688892B2 (en) | 2013-01-23 | 2017-06-27 | Henkel Ag & Co. Kgaa | Underfill composition and packaging process using the same |
WO2018030315A1 (ja) * | 2016-08-08 | 2018-02-15 | 太陽インキ製造株式会社 | 半導体用封止材 |
Also Published As
Publication number | Publication date |
---|---|
TW200305608A (en) | 2003-11-01 |
EP1461829A2 (en) | 2004-09-29 |
EP1461829B2 (en) | 2014-04-02 |
DK1461829T3 (da) | 2008-05-19 |
KR20040068145A (ko) | 2004-07-30 |
ATE383655T1 (de) | 2008-01-15 |
CN1307701C (zh) | 2007-03-28 |
KR100932998B1 (ko) | 2009-12-21 |
AU2002366498A1 (en) | 2003-06-30 |
WO2003052813A3 (en) | 2004-02-19 |
TWI238476B (en) | 2005-08-21 |
US20030141592A1 (en) | 2003-07-31 |
DE60224581T2 (de) | 2009-01-22 |
JP4299140B2 (ja) | 2009-07-22 |
DE60224581D1 (de) | 2008-02-21 |
EP1461829B1 (en) | 2008-01-09 |
US6833629B2 (en) | 2004-12-21 |
WO2003052813A2 (en) | 2003-06-26 |
CN1605122A (zh) | 2005-04-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4299140B2 (ja) | ウエハレベル用の二重硬化b−ステージ化可能なアンダーフィル | |
US7608487B2 (en) | B-stageable underfill encapsulant and method for its application | |
US7047633B2 (en) | Method of using pre-applied underfill encapsulant | |
JP4276085B2 (ja) | ウェハーパッケージング用のアンダーフィル封入材及びその塗布方法 | |
EP1818351B1 (en) | Underfill encapsulant for wafer packaging and method for its application | |
JP4481651B2 (ja) | 非フローアンダーフィル組成物 | |
JP2011063805A (ja) | ダイ取付用の二段硬化b−ステージ化可能な接着剤 | |
JP2005516090A5 (ja) | ||
US7004375B2 (en) | Pre-applied fluxing underfill composition having pressure sensitive adhesive properties |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20051110 |
|
A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20051110 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20051110 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20081020 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081028 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081120 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090317 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090416 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4299140 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120424 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120424 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120424 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120424 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130424 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130424 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140424 Year of fee payment: 5 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |