AU2165100A - Underfill film compositions - Google Patents

Underfill film compositions

Info

Publication number
AU2165100A
AU2165100A AU21651/00A AU2165100A AU2165100A AU 2165100 A AU2165100 A AU 2165100A AU 21651/00 A AU21651/00 A AU 21651/00A AU 2165100 A AU2165100 A AU 2165100A AU 2165100 A AU2165100 A AU 2165100A
Authority
AU
Australia
Prior art keywords
film compositions
underfill film
underfill
compositions
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU21651/00A
Inventor
David K. Klapprot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dexter Corp
Original Assignee
Dexter Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dexter Corp filed Critical Dexter Corp
Publication of AU2165100A publication Critical patent/AU2165100A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H—ELECTRICITY
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
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    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
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    • H01L2924/01015—Phosphorus [P]
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    • H01L2924/01—Chemical elements
    • H01L2924/01016—Sulfur [S]
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    • H01L2924/01023—Vanadium [V]
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    • H01L2924/01025—Manganese [Mn]
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    • H01L2924/01027—Cobalt [Co]
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    • H01L2924/0103—Zinc [Zn]
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    • H01L2924/01033—Arsenic [As]
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    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
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    • H01L2924/01076—Osmium [Os]
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    • H01L2924/01079—Gold [Au]
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    • H01L2924/01082—Lead [Pb]
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    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
AU21651/00A 1998-12-07 1999-12-07 Underfill film compositions Abandoned AU2165100A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US20731698A 1998-12-07 1998-12-07
US09207316 1998-12-07
PCT/US1999/028768 WO2000034032A1 (en) 1998-12-07 1999-12-07 Underfill film compositions

Publications (1)

Publication Number Publication Date
AU2165100A true AU2165100A (en) 2000-06-26

Family

ID=22770024

Family Applications (1)

Application Number Title Priority Date Filing Date
AU21651/00A Abandoned AU2165100A (en) 1998-12-07 1999-12-07 Underfill film compositions

Country Status (2)

Country Link
AU (1) AU2165100A (en)
WO (1) WO2000034032A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6632523B1 (en) 2000-09-28 2003-10-14 Sumitomo Bakelite Company Limited Low temperature bonding adhesive composition
US20020111420A1 (en) * 2001-02-12 2002-08-15 International Business Machines Corporation Underfill compositions
US6833629B2 (en) 2001-12-14 2004-12-21 National Starch And Chemical Investment Holding Corporation Dual cure B-stageable underfill for wafer level
DE10209915A1 (en) * 2002-01-11 2003-07-24 Hesse & Knipps Gmbh Method for flip chip bonding
EP1328015A3 (en) 2002-01-11 2003-12-03 Hesse & Knipps GmbH Method of bonding a flip chip
JP2005527113A (en) 2002-05-23 2005-09-08 スリーエム イノベイティブ プロパティズ カンパニー Nanoparticle filled underfill
JP2004307859A (en) 2003-04-05 2004-11-04 Rohm & Haas Electronic Materials Llc Electron device preparation
US7004375B2 (en) * 2003-05-23 2006-02-28 National Starch And Chemical Investment Holding Corporation Pre-applied fluxing underfill composition having pressure sensitive adhesive properties
US7047633B2 (en) 2003-05-23 2006-05-23 National Starch And Chemical Investment Holding, Corporation Method of using pre-applied underfill encapsulant
US20040235996A1 (en) * 2003-05-23 2004-11-25 Jayesh Shah Foamable underfill encapsulant
US6978540B2 (en) 2003-05-23 2005-12-27 National Starch And Chemical Investment Holding Corporation Method for pre-applied thermoplastic reinforcement of electronic components
US7218007B2 (en) * 2004-09-28 2007-05-15 Intel Corporation Underfill material to reduce ball limiting metallurgy delamination and cracking potential in semiconductor devices
JP2007056070A (en) * 2005-08-22 2007-03-08 Fujitsu Ltd Under fill material for flip chip type semiconductor device, the flip chip type semiconductor device using the same and method for producing the device
WO2009012442A1 (en) * 2007-07-18 2009-01-22 Lord Corporation Thermally conductive underfill formulations
US8152048B2 (en) * 2008-12-09 2012-04-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for adapting solder column to warped substrate
US9275879B1 (en) 2014-08-11 2016-03-01 International Business Machines Corporation Multi-chip module with rework capability
EP3450479A1 (en) * 2017-09-01 2019-03-06 Henkel AG & Co. KGaA A latent, fast curing composition, a use thereof and an article having a cured composition obtainable therefrom

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4437235A (en) * 1980-12-29 1984-03-20 Honeywell Information Systems Inc. Integrated circuit package
JP2570002B2 (en) * 1991-05-29 1997-01-08 信越化学工業株式会社 Flip chip sealing material and semiconductor device
JP3175979B2 (en) * 1992-09-14 2001-06-11 株式会社東芝 Resin-sealed semiconductor device
US5386624A (en) * 1993-07-06 1995-02-07 Motorola, Inc. Method for underencapsulating components on circuit supporting substrates
JP2625654B2 (en) * 1995-04-28 1997-07-02 日本電気株式会社 Semiconductor device and manufacturing method thereof
JPH1084014A (en) * 1996-07-19 1998-03-31 Shinko Electric Ind Co Ltd Manufacture of semiconductor device
JPH10125825A (en) * 1996-10-23 1998-05-15 Nec Corp Seal structure of chip device and method of sealing the same
US5814401A (en) * 1997-02-04 1998-09-29 Motorola, Inc. Selectively filled adhesive film containing a fluxing agent

Also Published As

Publication number Publication date
WO2000034032A1 (en) 2000-06-15

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MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase