JP2005506707A - 殊に点火に使用するための半導体回路装置およびその使用法 - Google Patents

殊に点火に使用するための半導体回路装置およびその使用法 Download PDF

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Publication number
JP2005506707A
JP2005506707A JP2003537197A JP2003537197A JP2005506707A JP 2005506707 A JP2005506707 A JP 2005506707A JP 2003537197 A JP2003537197 A JP 2003537197A JP 2003537197 A JP2003537197 A JP 2003537197A JP 2005506707 A JP2005506707 A JP 2005506707A
Authority
JP
Japan
Prior art keywords
semiconductor
voltage
control
clamping
switch device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2003537197A
Other languages
English (en)
Japanese (ja)
Inventor
ライナー　トップ
ホルスト　マインダース
ファイラー ヴォルフガング
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of JP2005506707A publication Critical patent/JP2005506707A/ja
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P3/00—Other installations
    • F02P3/02—Other installations having inductive energy storage, e.g. arrangements of induction coils
    • F02P3/04—Layout of circuits
    • F02P3/05—Layout of circuits for control of the magnitude of the current in the ignition coil
    • F02P3/051—Opening or closing the primary coil circuit with semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02D—CONTROLLING COMBUSTION ENGINES
    • F02D41/00—Electrical control of supply of combustible mixture or its constituents
    • F02D41/20—Output circuits, e.g. for controlling currents in command coils
    • F02D2041/202—Output circuits, e.g. for controlling currents in command coils characterised by the control of the circuit
    • F02D2041/2065—Output circuits, e.g. for controlling currents in command coils characterised by the control of the circuit the control being related to the coil temperature
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02D—CONTROLLING COMBUSTION ENGINES
    • F02D41/00—Electrical control of supply of combustible mixture or its constituents
    • F02D41/20—Output circuits, e.g. for controlling currents in command coils
    • F02D2041/2068—Output circuits, e.g. for controlling currents in command coils characterised by the circuit design or special circuit elements
    • F02D2041/2075—Type of transistors or particular use thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Ignition Installations For Internal Combustion Engines (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2003537197A 2001-10-09 2002-09-30 殊に点火に使用するための半導体回路装置およびその使用法 Ceased JP2005506707A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10149777A DE10149777A1 (de) 2001-10-09 2001-10-09 Halbleiter-Schaltungsanordnung, insbesondere für Zündungsverwendungen, und Verwendung
PCT/DE2002/003700 WO2003034590A1 (de) 2001-10-09 2002-09-30 Halbleiter-schaltungsanordnung, insbesondere für zündungsverwendungen, und verwendung

Publications (1)

Publication Number Publication Date
JP2005506707A true JP2005506707A (ja) 2005-03-03

Family

ID=7701912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003537197A Ceased JP2005506707A (ja) 2001-10-09 2002-09-30 殊に点火に使用するための半導体回路装置およびその使用法

Country Status (5)

Country Link
US (1) US7057240B2 (de)
EP (1) EP1444780A1 (de)
JP (1) JP2005506707A (de)
DE (1) DE10149777A1 (de)
WO (1) WO2003034590A1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007336694A (ja) * 2006-06-15 2007-12-27 Mitsubishi Electric Corp 絶縁ゲート型半導体素子の駆動回路
JP2021510486A (ja) * 2018-01-10 2021-04-22 日本テキサス・インスツルメンツ合同会社 適応型電圧クランプ及び関連方法

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10260650B4 (de) 2002-12-23 2006-06-08 Infineon Technologies Ag Leistungsschalteranordnung und Abschaltverfahren dafür
JP4223331B2 (ja) * 2003-06-13 2009-02-12 株式会社日立製作所 電力制御用半導体素子の保護装置及びそれを備えた電力変換装置
US6955164B2 (en) * 2004-02-17 2005-10-18 Delphi Technologies, Inc. Automotive ignition system with sparkless thermal overload protection
JP4449772B2 (ja) * 2004-04-09 2010-04-14 株式会社デンソー パワー半導体スイッチング素子及びそれを用いた半導体パワーモジュール
DE102005057577A1 (de) * 2005-12-02 2007-06-06 Robert Bosch Gmbh Leistungstransistor-Schalteinrichtung und Verfahren zur Funktionsprüfung einer derartigen Leistungstransistor-Schalteinrichtung
JP4893404B2 (ja) * 2007-03-26 2012-03-07 住友電気工業株式会社 光データリンク
KR101350670B1 (ko) * 2007-08-14 2014-01-10 엘지전자 주식회사 Ｔｄｄ에 기반한 무선통신 시스템에서 데이터 전송 방법
DE102007041784B4 (de) * 2007-09-03 2010-02-25 Continental Automotive Gmbh Schaltungsanordnung zum Schalten einer induktiven Last
DE102008033138A1 (de) * 2008-07-15 2010-01-21 Continental Automotive Gmbh Schaltungsanordnung zum Schalten einer induktiven Last
US8150671B2 (en) * 2009-04-30 2012-04-03 GM Global Technology Operations LLC Portable USB power mode simulator tool
JP5492518B2 (ja) * 2009-10-02 2014-05-14 株式会社日立製作所 半導体駆動回路、及びそれを用いた半導体装置
EP2801153B1 (de) * 2012-01-05 2019-08-21 Schneider Electric IT Corporation Vorrichtung und verfahren zur steuerung von halbleiterschaltvorrichtungen
CN103219898B (zh) * 2013-04-02 2016-06-01 苏州博创集成电路设计有限公司 具有电流采样和启动结构的半导体装置
EP2830218B1 (de) * 2013-07-23 2021-04-28 Infineon Technologies AG Thermischer Beobachter und Überlastungsschutz für Leistungsschalter
US9368958B2 (en) 2013-10-03 2016-06-14 Nxp B.V. Sensor controlled transistor protection
US9513647B2 (en) * 2015-03-30 2016-12-06 Analog Devices Global DC linear voltage regulator comprising a switchable circuit for leakage current suppression
TWI607298B (zh) * 2016-04-28 2017-12-01 Hestia Power Inc Adjustable voltage level wide bandgap semiconductor device
TWI655748B (zh) * 2016-12-16 2019-04-01 通嘉科技股份有限公司 具有熱敏單元的垂直雙擴散金氧半功率元件
CN109995001A (zh) * 2018-01-02 2019-07-09 通用电气公司 用于保护可控开关的保护电路和保护方法
US10685918B2 (en) * 2018-08-28 2020-06-16 Semiconductor Components Industries, Llc Process variation as die level traceability
US11574902B2 (en) * 2019-01-31 2023-02-07 Texas Instruments Incorporated Clamp for power transistor device
CN110993516B (zh) * 2019-12-13 2021-06-25 上海贝岭股份有限公司 自钳位igbt器件及其制造方法
CN113595541A (zh) * 2021-08-03 2021-11-02 珠海格力电器股份有限公司 开关管控制装置及开关管设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5379178A (en) * 1990-08-18 1995-01-03 Robert Bosch Gmbh Method and device for triggering an electromagnetic consumer
US5569982A (en) * 1995-05-17 1996-10-29 International Rectifier Corporation Clamping circuit for IGBT in spark plug ignition system
JPH09163583A (ja) * 1995-11-30 1997-06-20 Mitsubishi Electric Corp 半導体素子の保護回路
US20010017783A1 (en) * 1998-08-24 2001-08-30 Siemens Aktiengesellschaft Method and device for controlling a power converter valve that can be turned off and has at least two series circuits

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
JPH02197213A (ja) * 1989-01-23 1990-08-03 Fuji Electric Co Ltd 過大電流防止回路を備えた負荷駆動装置
JP3814958B2 (ja) * 1997-07-09 2006-08-30 日産自動車株式会社 半導体集積回路
DE19742019C2 (de) * 1997-09-24 2002-04-18 Alcatel Sa Verfahren und Schaltungsanordnung zur Begrenzung von Schaltüberspannungen an Leistungshalbleiterschaltern
DE19838109B4 (de) * 1998-08-21 2005-10-27 Infineon Technologies Ag Ansteuerschaltung für induktive Lasten
JP3707942B2 (ja) * 1998-12-17 2005-10-19 三菱電機株式会社 半導体装置とそれを用いた半導体回路
JP2001085618A (ja) * 1999-09-10 2001-03-30 Nissan Motor Co Ltd 半導体集積回路
JP3610890B2 (ja) * 1999-09-20 2005-01-19 株式会社デンソー 電気負荷駆動回路
JP3444263B2 (ja) * 2000-03-30 2003-09-08 株式会社日立製作所 制御回路内蔵絶縁ゲート半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5379178A (en) * 1990-08-18 1995-01-03 Robert Bosch Gmbh Method and device for triggering an electromagnetic consumer
US5569982A (en) * 1995-05-17 1996-10-29 International Rectifier Corporation Clamping circuit for IGBT in spark plug ignition system
JPH09163583A (ja) * 1995-11-30 1997-06-20 Mitsubishi Electric Corp 半導体素子の保護回路
US20010017783A1 (en) * 1998-08-24 2001-08-30 Siemens Aktiengesellschaft Method and device for controlling a power converter valve that can be turned off and has at least two series circuits

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007336694A (ja) * 2006-06-15 2007-12-27 Mitsubishi Electric Corp 絶縁ゲート型半導体素子の駆動回路
JP2021510486A (ja) * 2018-01-10 2021-04-22 日本テキサス・インスツルメンツ合同会社 適応型電圧クランプ及び関連方法
JP7469578B2 (ja) 2018-01-10 2024-04-17 テキサス インスツルメンツ インコーポレイテッド 適応型電圧クランプ及び関連方法

Also Published As

Publication number Publication date
EP1444780A1 (de) 2004-08-11
DE10149777A1 (de) 2003-04-24
WO2003034590A1 (de) 2003-04-24
US7057240B2 (en) 2006-06-06
US20040075103A1 (en) 2004-04-22

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