JP2005328039A - 薄い高速流体層を使用してウェーハ表面を処理する方法及び装置 - Google Patents
薄い高速流体層を使用してウェーハ表面を処理する方法及び装置 Download PDFInfo
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Abstract
【解決手段】処理流体は、ウェーハ表面に向けて供給され、出口304によって提供される真空により、ウェーハ上の流体と共に、ほぼ即座に除去される。ウェーハ表面に向けて供給され、ウェーハ表面上の任意の流体と共に、近接ヘッドとウェーハ表面との間の領域に一瞬存在する処理は、メニスカス116を形成し、メニスカス116の境界は、IPA/処理流体界面118となる。したがって、メニスカス116は、表面に向けて供給され、実質的に同時に、ウェーハ表面上の任意の流体と共に除去される一定の流動となる。ウェーハ表面からの処理流体の即時に近い除去は、乾燥中のウェーハ表面領域での流体の小滴の形成を防止し、ウェーハ108上での汚染の可能性を低減する。
【選択図】 図3
Description
本発明の利点は、数多く存在する。最も顕著なものとして、本明細書で説明する装置及び方法は、高速流体層を有する流体メニスカスを利用して、基板での流体の供給及び除去の最適な管理を伴うステップによって、基板の効率的な処理(例えば、洗浄、乾燥、その他)を行う一方で、ウェーハ表面に残る不必要な流体及び汚染物を低減する。一実施形態では、流体メニスカスを生成するために高速流体を使用することで、流体メニスカス/大気境界に対して表面張力低減ガスを利用する必要なく、流体メニスカスを基板/ウェーハに供給できる。結果として、効率的なウェーハ処理によって、ウェーハの処理及び生産を増大し、より高いウェーハの歩留まりを達成し得る。
表1
速度=流量/2(LH)
表1に図示した式で利用されるものとして、Lは、メニスカス116の長さであり、Hは、流体メニスカスの高さである。所望のウェーハ処理工程に応じて、流体メニスカス116は、任意の適切な寸法にしてよいと理解されたい。以下の流体メニスカス116の寸法は、純粋に例示的な目的で利用されており、流体メニスカスをこうした寸法に制限すると解釈されるべきではない。一実施形態において、流体メニスカス116は、50mmの長さと、約0.25インチ(6.35mm)の幅とを有してよい。表1に示した式を使用することで、高さHが1.5mmである場合には、流量1000ml/分において速度10cm/秒が得られ、流量500ml/分において速度5cm/秒が得られ、流量100ml/分において速度1cm/秒が得られる。別の例において、流体メニスカスの高さ(例えば、近接ヘッド106とウェーハ108との間の隙間)が約0.005cmである場合、流量1L/分において速度167cm/秒が得られ、流量500ml/分において速度83cm/秒が得られ、流量100ml/分において速度17cm/秒が得られる。例示的な計算は、純粋に例示的な目的で行われたものであり、流体メニスカス116の寸法に応じて、上の計算は変化し得ると理解されたい。
Claims (25)
- 基板を処理する方法であって、
前記基板の表面上に、流体メニスカスを画定する流体層を生成するステップを備え、
前記生成するステップは、
前記基板に近接してヘッドを移動させるステップと、
前記流体層を画定するために、前記ヘッドが前記基板の前記表面に近接している状態で、前記ヘッドから前記表面に流体を供給するステップと、
真空により、前記近接ヘッドを介して前記表面から前記流体を除去するステップと、
を含み、
前記流体は、前記ヘッドが前記表面の近くにあるほど増加する速度で、前記ヘッドと前記基板との間の前記流体層に沿って移動する、
方法。 - 前記ヘッドは、前記流体層の前記生成ステップ中、約5ミクロンないし約500ミクロンの距離にあり、前記速度は、5cm/秒ないし200cm/秒である、請求項1記載の基板を処理する方法。
- 前記流体は、約50ml/秒ないし約500ml/秒の流量を有する、請求項2記載の基板を処理する方法。
- 前記流体メニスカスは、エッチング工程、洗浄工程、めっき工程、又は乾燥工程のうちの一つを実行する、請求項1記載の基板を処理する方法。
- 前記流体層を生成するステップは、流体入口を介して前記基板の前記表面に対して前記流体を供給するステップと、流体出口を介して前記基板の前記表面から前記流体を除去するステップとを含む、請求項1記載の基板を処理する方法。
- 前記流体は、エッチング流体、めっき流体、洗浄流体、又はリンス流体のうちの一つである、請求項5記載の基板を処理する方法。
- 前記流体を生成するステップは、前記流体メニスカスに対して表面張力低減流体を供給するステップを含む、請求項1記載の基板を処理する方法。
- 前記流体を除去するステップは、前記流体出口を介して前記真空を提供するステップを含む、請求項5記載の基板を処理する方法。
- 基板を処理する装置であって、
前記基板の表面に近接して移動可能であると共に、流体メニスカスを画定するために前記基板の前記表面上に流体層を生成可能なヘッドを備え、
前記近接ヘッドは、
前記流体層を画定するために前記基板の前記表面に流体を供給するように構成された少なくとも一つの入口と、
前記基板の前記表面から前記流体を除去するように構成された少なくとも一つの出口と、を含み、
前記ヘッドは、前記ヘッドが前記表面の近くにあるほど増加する速度で、前記ヘッドと前記基板との間の前記流体層に沿って前記流体を移動させることができる装置。 - 前記ヘッドは、動作時に、前記表面から約5ミクロンないし約500ミクロンの距離へ移動するように構成される、請求項9記載の基板を処理する装置。
- ヘッドは、約50ml/秒ないし約4000ml/秒の流量で前記表面に対して前記流体を供給できる、請求項9記載の基板を処理する装置。
- 前記流体メニスカスは、エッチング工程、洗浄工程、めっき工程、又は乾燥工程のうちの一つを実行する、請求項9記載の基板を処理する装置。
- 前記出口は、前記表面から前記流体を除去するために真空を提供する、請求項9記載の基板を処理する装置。
- 前記ヘッドは、10cm/秒ないし100cm/秒の速度で、前記入口から前記出口へ、前記基板の前記表面に沿って前記流体を移動させることが可能である、請求項9記載の基板を処理する装置。
- 前記流体層は、エッチング流体、めっき流体、洗浄流体、又はリンス流体のうちの一つを含む、請求項9記載の基板を処理する装置。
- 更に、前記流体メニスカスの境界に表面張力低減流体を供給することが可能な追加の入口を備える、請求項9記載の基板を処理する装置。
- 前記表面張力低減流体は、窒素ガス中のイソプロピルアルコール蒸気である、請求項9記載の基板を処理する装置。
- 動作時に基板表面に近接して移動可能なヘッドと、
前記ヘッドを介して前記基板表面に流体を送給する第一の流路と、
前記基板表面から前記流体を除去する第二の流路であって、動作時に、前記流体が前記基板表面の上に流体層を形成する第二の流路と、
を備える基板処理システムであって、
前記流体は、前記ヘッドが前記基板表面の近くにあるほど増加する速度で、前記ヘッドと前記基板表面との間の前記流体層に沿って移動する、
基板処理システム。 - 前記ヘッドは、動作時に前記基板表面から約5ミクロンないし約500ミクロンの距離へ移動するように構成される、請求項18記載の基板処理システム。
- 前記ヘッドは、約10cm/秒ないし約100cm/秒の流量で前記流体を供給できる、請求項18記載の基板処理システム。
- 前記流体層は、エッチング工程、洗浄工程、めっき工程、又は乾燥工程のうちの一つを実行する、請求項18記載の基板処理システム。
- 前記第二の流路は、前記基板表面から前記流体を除去するために真空を提供する、請求項18記載の基板処理システム。
- 前記流体は、エッチング流体、めっき流体、洗浄流体、又はリンス流体のうちの一つである、請求項18記載の基板処理システム。
- 更に、前記基板表面に表面張力低減流体を供給することが可能な追加入口を備える、請求項18記載の基板処理システム。
- 前記表面張力低減流体は、窒素ガス中のイソプロピルアルコール蒸気である、請求項24記載の基板処理システム。
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US10/817,355 US7293571B2 (en) | 2002-09-30 | 2004-04-01 | Substrate proximity processing housing and insert for generating a fluid meniscus |
US10/817355 | 2004-04-01 | ||
US10/882835 | 2004-06-30 | ||
US10/882,835 US7383843B2 (en) | 2002-09-30 | 2004-06-30 | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
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JP2005328039A5 JP2005328039A5 (ja) | 2008-05-08 |
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2005
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- 2005-03-30 EP EP05251948A patent/EP1583138A1/en not_active Ceased
- 2005-03-30 EP EP09175413A patent/EP2169706A1/en not_active Withdrawn
- 2005-03-31 JP JP2005100392A patent/JP4759300B2/ja not_active Expired - Fee Related
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JP2003151948A (ja) * | 2001-11-08 | 2003-05-23 | Seiko Epson Corp | 表面処理装置および表面処理方法 |
JP2006501693A (ja) * | 2002-09-30 | 2006-01-12 | ラム リサーチ コーポレーション | メニスカス、真空、ipa蒸気、乾燥マニホルドを用いた基板処理システム |
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JP2008532269A (ja) * | 2005-02-17 | 2008-08-14 | ラム リサーチ コーポレーション | 改良ウエハ洗浄方法 |
JP2010528474A (ja) * | 2007-05-21 | 2010-08-19 | ラム リサーチ コーポレーション | 統合電気接点を有する基板把持装置 |
Also Published As
Publication number | Publication date |
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KR101117051B1 (ko) | 2012-02-22 |
SG115843A1 (en) | 2005-10-28 |
US20080230097A1 (en) | 2008-09-25 |
KR20060045449A (ko) | 2006-05-17 |
US20050145265A1 (en) | 2005-07-07 |
EP2169706A1 (en) | 2010-03-31 |
JP4759300B2 (ja) | 2011-08-31 |
CN101783285B (zh) | 2012-02-22 |
MY139627A (en) | 2009-10-30 |
CN101783285A (zh) | 2010-07-21 |
US7383843B2 (en) | 2008-06-10 |
EP1583138A1 (en) | 2005-10-05 |
US7534307B2 (en) | 2009-05-19 |
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