JP2005328039A5 - - Google Patents
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- JP2005328039A5 JP2005328039A5 JP2005100392A JP2005100392A JP2005328039A5 JP 2005328039 A5 JP2005328039 A5 JP 2005328039A5 JP 2005100392 A JP2005100392 A JP 2005100392A JP 2005100392 A JP2005100392 A JP 2005100392A JP 2005328039 A5 JP2005328039 A5 JP 2005328039A5
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Claims (17)
- 基板を処理する装置であって、
前記基板の表面に近接して移動可能であると共に、流体メニスカスを画定するために前記基板の前記表面上に流体層を生成可能なヘッドを備え、
前記ヘッドは、
平らな表面領域を有するヘッド面と、
前記流体層を画定するために前記基板の前記表面に流体を供給するための、前記ヘッド面に設けられた少なくとも一つの入口と、
前記基板の前記表面から前記流体を除去するための、前記ヘッド面に設けられた少なくとも一つの出口と、を含み、
前記ヘッドは、前記ヘッドが前記表面の近くにあるほど増加する速度で、前記ヘッド面と前記基板との間の前記流体層に沿って前記流体を移動させるように構成され、
前記少なくとも一つの入口と、前記少なくとも一つの出口とが、複数の個別の穴として構成され、前記複数の個別の穴が、前記ヘッド面に設けられかつ前記ヘッド面の前記平らな表面領域に配されているように、前記ヘッド面が構成される、装置。 - 前記ヘッドは、動作時に、前記表面から約5ミクロンないし約500ミクロンの距離へ移動するように構成される、請求項1記載の基板を処理する装置。
- ヘッドは、約50ml/秒ないし約4000ml/秒の流量で前記表面に対して前記流体を供給できる、請求項1記載の基板を処理する装置。
- 前記流体メニスカスは、エッチング工程、洗浄工程、めっき工程、又は乾燥工程のうちの一つを実行する、請求項1記載の基板を処理する装置。
- 前記出口は、前記表面から前記流体を除去するために真空を提供する、請求項1記載の基板を処理する装置。
- 前記ヘッドは、10cm/秒ないし100cm/秒の速度で、前記入口から前記出口へ、前記基板の前記表面に沿って前記流体を移動させることが可能である、請求項1記載の基板を処理する装置。
- 前記流体層は、エッチング流体、めっき流体、洗浄流体、又はリンス流体のうちの一つを含む、請求項1記載の基板を処理する装置。
- 更に、前記流体メニスカスの境界に表面張力低減流体を供給することが可能な追加の入口を備える、請求項1記載の基板を処理する装置。
- 前記表面張力低減流体は、窒素ガス中のイソプロピルアルコール蒸気である、請求項1記載の基板を処理する装置。
- 平らな表面領域を有するヘッド面を備え、動作時に基板表面に近接して移動可能なヘッドと、
前記ヘッド面に設けられ、前記ヘッドを介して前記基板表面に流体を送給する第一の流路と、
前記ヘッド面に設けられ、前記基板表面から前記流体を除去する第二の流路であって、動作時に、前記流体が前記基板表面の上に流体層を形成する第二の流路と、
を備える基板処理システムであって、
前記流体は、前記ヘッドが前記基板表面の近くにあるほど増加する速度で、前記ヘッド面と前記基板表面との間の前記流体層に沿って移動し、
前記第一の流路と前記第二の流路とが、複数の個別の穴として構成され、前記複数の個別の穴が、前記ヘッド面に設けられかつ前記ヘッド面の前記平らな表面領域に配されているように、前記ヘッド面が設けられている、基板処理システム。 - 前記ヘッドは、動作時に前記基板表面から約5ミクロンないし約500ミクロンの距離へ移動するように構成される、請求項10記載の基板処理システム。
- 前記ヘッドは、約10cm/秒ないし約100cm/秒の流量で前記流体を供給できる、請求項10記載の基板処理システム。
- 前記流体層は、エッチング工程、洗浄工程、めっき工程、又は乾燥工程のうちの一つを実行する、請求項10記載の基板処理システム。
- 前記第二の流路は、前記基板表面から前記流体を除去するために真空を提供する、請求項10記載の基板処理システム。
- 前記流体は、エッチング流体、めっき流体、洗浄流体、又はリンス流体のうちの一つである、請求項10記載の基板処理システム。
- 更に、前記基板表面に表面張力低減流体を供給することが可能な追加入口を備える、請求項10記載の基板処理システム。
- 前記表面張力低減流体は、窒素ガス中のイソプロピルアルコール蒸気である、請求項16記載の基板処理システム。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/817,355 US7293571B2 (en) | 2002-09-30 | 2004-04-01 | Substrate proximity processing housing and insert for generating a fluid meniscus |
US10/817355 | 2004-04-01 | ||
US10/882835 | 2004-06-30 | ||
US10/882,835 US7383843B2 (en) | 2002-09-30 | 2004-06-30 | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005328039A JP2005328039A (ja) | 2005-11-24 |
JP2005328039A5 true JP2005328039A5 (ja) | 2008-05-08 |
JP4759300B2 JP4759300B2 (ja) | 2011-08-31 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005100392A Expired - Fee Related JP4759300B2 (ja) | 2004-04-01 | 2005-03-31 | 薄い高速流体層を使用してウェーハ表面を処理する方法及び装置 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7383843B2 (ja) |
EP (2) | EP1583138A1 (ja) |
JP (1) | JP4759300B2 (ja) |
KR (1) | KR101117051B1 (ja) |
CN (1) | CN101783285B (ja) |
MY (1) | MY139627A (ja) |
SG (1) | SG115843A1 (ja) |
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-
2004
- 2004-06-30 US US10/882,835 patent/US7383843B2/en active Active
-
2005
- 2005-03-28 SG SG200502559A patent/SG115843A1/en unknown
- 2005-03-30 EP EP05251948A patent/EP1583138A1/en not_active Ceased
- 2005-03-30 EP EP09175413A patent/EP2169706A1/en not_active Withdrawn
- 2005-03-31 JP JP2005100392A patent/JP4759300B2/ja not_active Expired - Fee Related
- 2005-04-01 KR KR1020050027774A patent/KR101117051B1/ko active IP Right Grant
- 2005-04-01 MY MYPI20051481A patent/MY139627A/en unknown
- 2005-04-01 CN CN2010101197555A patent/CN101783285B/zh not_active Expired - Fee Related
-
2008
- 2008-05-30 US US12/129,679 patent/US7534307B2/en not_active Expired - Fee Related
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