JP2005317110A5 - - Google Patents

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Publication number
JP2005317110A5
JP2005317110A5 JP2004133978A JP2004133978A JP2005317110A5 JP 2005317110 A5 JP2005317110 A5 JP 2005317110A5 JP 2004133978 A JP2004133978 A JP 2004133978A JP 2004133978 A JP2004133978 A JP 2004133978A JP 2005317110 A5 JP2005317110 A5 JP 2005317110A5
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JP
Japan
Prior art keywords
sub
bit line
memory device
nonvolatile semiconductor
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004133978A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005317110A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004133978A priority Critical patent/JP2005317110A/ja
Priority claimed from JP2004133978A external-priority patent/JP2005317110A/ja
Priority to US11/115,298 priority patent/US7263002B2/en
Publication of JP2005317110A publication Critical patent/JP2005317110A/ja
Priority to US11/785,561 priority patent/US7379345B2/en
Publication of JP2005317110A5 publication Critical patent/JP2005317110A5/ja
Pending legal-status Critical Current

Links

JP2004133978A 2004-04-28 2004-04-28 不揮発性半導体記憶装置 Pending JP2005317110A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004133978A JP2005317110A (ja) 2004-04-28 2004-04-28 不揮発性半導体記憶装置
US11/115,298 US7263002B2 (en) 2004-04-28 2005-04-27 Nonvolatile semiconductor memory device that achieves speedup in read operation
US11/785,561 US7379345B2 (en) 2004-04-28 2007-04-18 Nonvolatile semiconductor memory device that achieves speedup in read operation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004133978A JP2005317110A (ja) 2004-04-28 2004-04-28 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2005317110A JP2005317110A (ja) 2005-11-10
JP2005317110A5 true JP2005317110A5 (https=) 2007-04-26

Family

ID=35186916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004133978A Pending JP2005317110A (ja) 2004-04-28 2004-04-28 不揮発性半導体記憶装置

Country Status (2)

Country Link
US (2) US7263002B2 (https=)
JP (1) JP2005317110A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005317110A (ja) * 2004-04-28 2005-11-10 Renesas Technology Corp 不揮発性半導体記憶装置
KR100736408B1 (ko) * 2006-06-10 2007-07-09 삼성전자주식회사 비트 라인의 전압 강하를 보상할 수 있는 반도체 장치와 그보상 방법
KR100865820B1 (ko) * 2007-06-28 2008-10-28 주식회사 하이닉스반도체 메모리 소자 및 독출 방법
US7643367B2 (en) * 2007-08-15 2010-01-05 Oki Semiconductor Co., Ltd. Semiconductor memory device
KR101264518B1 (ko) * 2008-10-06 2013-05-14 가부시키가이샤 히타치세이사쿠쇼 반도체 장치
JP5343916B2 (ja) 2010-04-16 2013-11-13 富士通セミコンダクター株式会社 半導体メモリ
IT1404368B1 (it) * 2010-12-21 2013-11-22 St Microelectronics Srl Dispositivo di memoria e relativo metodo di lettura
JP2012119058A (ja) * 2012-02-13 2012-06-21 Fujitsu Semiconductor Ltd 不揮発性半導体メモリ
FR3003071B1 (fr) * 2013-03-06 2016-11-11 Inside Secure Memoire comprenant un circuit pour detecter une impulsion transitoire sur une ligne de memoire
US10395699B2 (en) * 2014-09-25 2019-08-27 Everspin Technologies, Inc. Memory device with shared amplifier circuitry

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3990485B2 (ja) * 1997-12-26 2007-10-10 株式会社ルネサステクノロジ 半導体不揮発性記憶装置
JP2000276891A (ja) * 1999-03-26 2000-10-06 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置
JP2002216488A (ja) * 2001-01-18 2002-08-02 Iwate Toshiba Electronics Co Ltd 半導体記憶装置
JP3573341B2 (ja) 2001-05-09 2004-10-06 松下電器産業株式会社 半導体記憶装置
JP2003157689A (ja) * 2001-11-20 2003-05-30 Hitachi Ltd 半導体装置及びデータプロセッサ
JP4012152B2 (ja) * 2002-02-28 2007-11-21 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
KR100423894B1 (ko) * 2002-05-09 2004-03-22 삼성전자주식회사 저전압 반도체 메모리 장치
JP2003346489A (ja) * 2002-05-24 2003-12-05 Mitsubishi Electric Corp 半導体記憶装置
JP2005317110A (ja) * 2004-04-28 2005-11-10 Renesas Technology Corp 不揮発性半導体記憶装置

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