JP2005317110A - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

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Publication number
JP2005317110A
JP2005317110A JP2004133978A JP2004133978A JP2005317110A JP 2005317110 A JP2005317110 A JP 2005317110A JP 2004133978 A JP2004133978 A JP 2004133978A JP 2004133978 A JP2004133978 A JP 2004133978A JP 2005317110 A JP2005317110 A JP 2005317110A
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JP
Japan
Prior art keywords
bit line
sub
reset
read
main bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004133978A
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English (en)
Japanese (ja)
Other versions
JP2005317110A5 (https=
Inventor
Kayoko Omoto
かよ子 尾本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2004133978A priority Critical patent/JP2005317110A/ja
Priority to US11/115,298 priority patent/US7263002B2/en
Publication of JP2005317110A publication Critical patent/JP2005317110A/ja
Priority to US11/785,561 priority patent/US7379345B2/en
Publication of JP2005317110A5 publication Critical patent/JP2005317110A5/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out

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  • Read Only Memory (AREA)
JP2004133978A 2004-04-28 2004-04-28 不揮発性半導体記憶装置 Pending JP2005317110A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004133978A JP2005317110A (ja) 2004-04-28 2004-04-28 不揮発性半導体記憶装置
US11/115,298 US7263002B2 (en) 2004-04-28 2005-04-27 Nonvolatile semiconductor memory device that achieves speedup in read operation
US11/785,561 US7379345B2 (en) 2004-04-28 2007-04-18 Nonvolatile semiconductor memory device that achieves speedup in read operation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004133978A JP2005317110A (ja) 2004-04-28 2004-04-28 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2005317110A true JP2005317110A (ja) 2005-11-10
JP2005317110A5 JP2005317110A5 (https=) 2007-04-26

Family

ID=35186916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004133978A Pending JP2005317110A (ja) 2004-04-28 2004-04-28 不揮発性半導体記憶装置

Country Status (2)

Country Link
US (2) US7263002B2 (https=)
JP (1) JP2005317110A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012119058A (ja) * 2012-02-13 2012-06-21 Fujitsu Semiconductor Ltd 不揮発性半導体メモリ
US9224487B2 (en) 2010-04-16 2015-12-29 Cypress Semiconductor Corporation Semiconductor memory read and write access

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005317110A (ja) * 2004-04-28 2005-11-10 Renesas Technology Corp 不揮発性半導体記憶装置
KR100736408B1 (ko) * 2006-06-10 2007-07-09 삼성전자주식회사 비트 라인의 전압 강하를 보상할 수 있는 반도체 장치와 그보상 방법
KR100865820B1 (ko) * 2007-06-28 2008-10-28 주식회사 하이닉스반도체 메모리 소자 및 독출 방법
US7643367B2 (en) * 2007-08-15 2010-01-05 Oki Semiconductor Co., Ltd. Semiconductor memory device
KR101264518B1 (ko) * 2008-10-06 2013-05-14 가부시키가이샤 히타치세이사쿠쇼 반도체 장치
IT1404368B1 (it) * 2010-12-21 2013-11-22 St Microelectronics Srl Dispositivo di memoria e relativo metodo di lettura
FR3003071B1 (fr) * 2013-03-06 2016-11-11 Inside Secure Memoire comprenant un circuit pour detecter une impulsion transitoire sur une ligne de memoire
US10395699B2 (en) * 2014-09-25 2019-08-27 Everspin Technologies, Inc. Memory device with shared amplifier circuitry

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11191298A (ja) * 1997-12-26 1999-07-13 Hitachi Ltd 半導体不揮発性記憶装置
JP2000276891A (ja) * 1999-03-26 2000-10-06 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置
JP2002216488A (ja) * 2001-01-18 2002-08-02 Iwate Toshiba Electronics Co Ltd 半導体記憶装置
JP2003157689A (ja) * 2001-11-20 2003-05-30 Hitachi Ltd 半導体装置及びデータプロセッサ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3573341B2 (ja) 2001-05-09 2004-10-06 松下電器産業株式会社 半導体記憶装置
JP4012152B2 (ja) * 2002-02-28 2007-11-21 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
KR100423894B1 (ko) * 2002-05-09 2004-03-22 삼성전자주식회사 저전압 반도체 메모리 장치
JP2003346489A (ja) * 2002-05-24 2003-12-05 Mitsubishi Electric Corp 半導体記憶装置
JP2005317110A (ja) * 2004-04-28 2005-11-10 Renesas Technology Corp 不揮発性半導体記憶装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11191298A (ja) * 1997-12-26 1999-07-13 Hitachi Ltd 半導体不揮発性記憶装置
JP2000276891A (ja) * 1999-03-26 2000-10-06 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置
JP2002216488A (ja) * 2001-01-18 2002-08-02 Iwate Toshiba Electronics Co Ltd 半導体記憶装置
JP2003157689A (ja) * 2001-11-20 2003-05-30 Hitachi Ltd 半導体装置及びデータプロセッサ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9224487B2 (en) 2010-04-16 2015-12-29 Cypress Semiconductor Corporation Semiconductor memory read and write access
JP2012119058A (ja) * 2012-02-13 2012-06-21 Fujitsu Semiconductor Ltd 不揮発性半導体メモリ

Also Published As

Publication number Publication date
US7263002B2 (en) 2007-08-28
US7379345B2 (en) 2008-05-27
US20050243622A1 (en) 2005-11-03
US20070195601A1 (en) 2007-08-23

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