JP2005311293A - 半導体チップ、半導体装置、半導体装置の製造方法及び電子機器 - Google Patents
半導体チップ、半導体装置、半導体装置の製造方法及び電子機器 Download PDFInfo
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- JP2005311293A JP2005311293A JP2004319480A JP2004319480A JP2005311293A JP 2005311293 A JP2005311293 A JP 2005311293A JP 2004319480 A JP2004319480 A JP 2004319480A JP 2004319480 A JP2004319480 A JP 2004319480A JP 2005311293 A JP2005311293 A JP 2005311293A
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- E—FIXED CONSTRUCTIONS
- E03—WATER SUPPLY; SEWERAGE
- E03F—SEWERS; CESSPOOLS
- E03F5/00—Sewerage structures
- E03F5/10—Collecting-tanks; Equalising-tanks for regulating the run-off; Laying-up basins
- E03F5/105—Accessories, e.g. flow regulators or cleaning devices
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F3/00—Biological treatment of water, waste water, or sewage
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- E—FIXED CONSTRUCTIONS
- E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
- E02B—HYDRAULIC ENGINEERING
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Structural Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Water Supply & Treatment (AREA)
- Hydrology & Water Resources (AREA)
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- Health & Medical Sciences (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (5)
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|---|---|---|---|
| JP2004319480A JP2005311293A (ja) | 2004-03-26 | 2004-11-02 | 半導体チップ、半導体装置、半導体装置の製造方法及び電子機器 |
| TW094105056A TWI257676B (en) | 2004-03-26 | 2005-02-21 | Semiconductor chip, semiconductor device, method for producing semiconductor device, and electronic equipment |
| US11/064,596 US20050212130A1 (en) | 2004-03-26 | 2005-02-24 | Semiconductor chip, semiconductor device, method for producing semiconductor device, and electronic equipment |
| CNA2005100590688A CN1674242A (zh) | 2004-03-26 | 2005-03-22 | 半导体芯片、半导体装置、半导体装置的制造方法 |
| KR1020050024407A KR100659447B1 (ko) | 2004-03-26 | 2005-03-24 | 반도체 칩, 반도체 장치, 반도체 장치의 제조 방법 및전자기기 |
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| JP2004091171 | 2004-03-26 | ||
| JP2004319480A JP2005311293A (ja) | 2004-03-26 | 2004-11-02 | 半導体チップ、半導体装置、半導体装置の製造方法及び電子機器 |
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| JP2005311293A true JP2005311293A (ja) | 2005-11-04 |
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| JP (1) | JP2005311293A (enExample) |
| KR (1) | KR100659447B1 (enExample) |
| CN (1) | CN1674242A (enExample) |
| TW (1) | TWI257676B (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010161322A (ja) * | 2009-01-10 | 2010-07-22 | Enrei Yu | 半導体部材のメタルバンプと密封を形成する方法 |
| JP2013140902A (ja) * | 2012-01-06 | 2013-07-18 | Enrei Yu | 半導体パッケージ及びその製造方法 |
| WO2013133116A1 (ja) * | 2012-03-05 | 2013-09-12 | デクセリアルズ株式会社 | 異方性導電材料を用いた接続方法及び異方性導電接合体 |
| JP2015005741A (ja) * | 2013-05-22 | 2015-01-08 | 積水化学工業株式会社 | 接続構造体 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005191541A (ja) * | 2003-12-05 | 2005-07-14 | Seiko Epson Corp | 半導体装置、半導体チップ、半導体装置の製造方法及び電子機器 |
| JP4750586B2 (ja) * | 2006-02-28 | 2011-08-17 | 住友電工デバイス・イノベーション株式会社 | 半導体装置および電子装置並びにその製造方法 |
| KR20110052880A (ko) * | 2009-11-13 | 2011-05-19 | 삼성전자주식회사 | 플립 칩 패키지 및 그의 제조 방법 |
| CN103107156B (zh) * | 2011-11-11 | 2016-02-10 | 讯忆科技股份有限公司 | 晶圆焊垫的凸块结构及其制造方法 |
| US9331033B1 (en) * | 2014-12-23 | 2016-05-03 | Sunasic Technologies Inc. | Method for forming stacked metal contact in electrical communication with aluminum wiring in semiconductor wafer of integrated circuit |
| CN105826206B (zh) * | 2015-01-05 | 2018-07-24 | 旭景科技股份有限公司 | 用于形成堆栈金属接点与半导体晶圆内铝线电连通的方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63128734A (ja) * | 1986-11-19 | 1988-06-01 | Seiko Epson Corp | 半導体装置 |
| JP2000286299A (ja) * | 1999-03-30 | 2000-10-13 | Matsushita Electric Ind Co Ltd | 半導体装置の接続方法 |
| JP2000294593A (ja) * | 1999-04-08 | 2000-10-20 | Nec Corp | 集積回路の端子構造 |
| JP2002158248A (ja) * | 2000-05-01 | 2002-05-31 | Seiko Epson Corp | バンプの形成方法、半導体装置及びその製造方法、回路基板並びに電子機器 |
| JP2003282616A (ja) * | 2002-03-20 | 2003-10-03 | Seiko Epson Corp | バンプの形成方法及び半導体装置の製造方法 |
| JP2003282615A (ja) * | 2002-03-20 | 2003-10-03 | Seiko Epson Corp | バンプの構造、バンプの形成方法、半導体装置およびその製造方法並びに電子機器 |
-
2004
- 2004-11-02 JP JP2004319480A patent/JP2005311293A/ja active Pending
-
2005
- 2005-02-21 TW TW094105056A patent/TWI257676B/zh not_active IP Right Cessation
- 2005-02-24 US US11/064,596 patent/US20050212130A1/en not_active Abandoned
- 2005-03-22 CN CNA2005100590688A patent/CN1674242A/zh active Pending
- 2005-03-24 KR KR1020050024407A patent/KR100659447B1/ko not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63128734A (ja) * | 1986-11-19 | 1988-06-01 | Seiko Epson Corp | 半導体装置 |
| JP2000286299A (ja) * | 1999-03-30 | 2000-10-13 | Matsushita Electric Ind Co Ltd | 半導体装置の接続方法 |
| JP2000294593A (ja) * | 1999-04-08 | 2000-10-20 | Nec Corp | 集積回路の端子構造 |
| JP2002158248A (ja) * | 2000-05-01 | 2002-05-31 | Seiko Epson Corp | バンプの形成方法、半導体装置及びその製造方法、回路基板並びに電子機器 |
| JP2003282616A (ja) * | 2002-03-20 | 2003-10-03 | Seiko Epson Corp | バンプの形成方法及び半導体装置の製造方法 |
| JP2003282615A (ja) * | 2002-03-20 | 2003-10-03 | Seiko Epson Corp | バンプの構造、バンプの形成方法、半導体装置およびその製造方法並びに電子機器 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010161322A (ja) * | 2009-01-10 | 2010-07-22 | Enrei Yu | 半導体部材のメタルバンプと密封を形成する方法 |
| JP2013140902A (ja) * | 2012-01-06 | 2013-07-18 | Enrei Yu | 半導体パッケージ及びその製造方法 |
| WO2013133116A1 (ja) * | 2012-03-05 | 2013-09-12 | デクセリアルズ株式会社 | 異方性導電材料を用いた接続方法及び異方性導電接合体 |
| JP2013183118A (ja) * | 2012-03-05 | 2013-09-12 | Dexerials Corp | 異方性導電材料を用いた接続方法及び異方性導電接合体 |
| KR20140138822A (ko) * | 2012-03-05 | 2014-12-04 | 데쿠세리아루즈 가부시키가이샤 | 이방성 도전 재료를 사용한 접속 방법 및 이방성 도전 접합체 |
| KR101994507B1 (ko) | 2012-03-05 | 2019-06-28 | 데쿠세리아루즈 가부시키가이샤 | 이방성 도전 재료를 사용한 접속 방법 및 이방성 도전 접합체 |
| JP2015005741A (ja) * | 2013-05-22 | 2015-01-08 | 積水化学工業株式会社 | 接続構造体 |
Also Published As
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|---|---|
| CN1674242A (zh) | 2005-09-28 |
| TW200532831A (en) | 2005-10-01 |
| US20050212130A1 (en) | 2005-09-29 |
| KR100659447B1 (ko) | 2006-12-19 |
| KR20060044669A (ko) | 2006-05-16 |
| TWI257676B (en) | 2006-07-01 |
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