JP2005228762A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 294
- 238000004519 manufacturing process Methods 0.000 title claims description 40
- 239000000758 substrate Substances 0.000 claims abstract description 376
- 239000013078 crystal Substances 0.000 claims abstract description 193
- 239000010408 film Substances 0.000 claims description 252
- 238000000034 method Methods 0.000 claims description 91
- 239000001257 hydrogen Substances 0.000 claims description 47
- 229910052739 hydrogen Inorganic materials 0.000 claims description 47
- 238000005468 ion implantation Methods 0.000 claims description 37
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 29
- 239000010409 thin film Substances 0.000 claims description 27
- 150000002500 ions Chemical class 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 19
- 238000002425 crystallisation Methods 0.000 claims description 16
- 230000008025 crystallization Effects 0.000 claims description 16
- -1 hydrogen ions Chemical class 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 285
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 229
- 229910004298 SiO 2 Inorganic materials 0.000 description 75
- 229910021417 amorphous silicon Inorganic materials 0.000 description 48
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 45
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 28
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- 238000000926 separation method Methods 0.000 description 12
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
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- 238000003776 cleavage reaction Methods 0.000 description 9
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 238000003795 desorption Methods 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
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- 230000002093 peripheral effect Effects 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
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- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
【解決手段】半導体装置600は、絶縁性表面を有する基板100と、基板100の絶縁性表面に接合された単結晶半導体層190とを備えており、基板100の絶縁性表面と単結晶半導体層190との間に位置する第1の絶縁層210と、基板100の絶縁性表面のうち、第1の絶縁層210が存在しない領域100pに堆積された第2の絶縁層230とをさらに有している。
【選択図】図2
Description
前記単結晶半導体デバイスは、前記第3の絶縁層上に設けられたゲート電極をさらに有し、前記非単結晶半導体デバイスは、前記非単結晶半導体層を覆うゲート絶縁膜と、前記ゲート絶縁膜上に設けられたゲート電極とをさらに有し、前記第3の絶縁層は、前記非単結晶半導体デバイスの前記ゲート絶縁膜よりも薄い。
前記工程(f)は、(f2)前記非晶質半導体膜を結晶化して多結晶半導体膜を形成する工程と、(f3)前記多結晶半導体膜をパターニングする工程とをさらに包含することができる。
以下、図2(a)〜(h)を参照しながら、本発明の実施形態を説明する。
図3(a)〜(i)を参照しながら、本発明の第2の実施形態を説明する。
以下、図4(a)〜(h)を参照しながら、本発明の第3の実施形態を説明する。
以下、図5(a)〜(h)を参照しながら、本発明の第4の実施形態を説明する。
2、3 絶縁層
4 単結晶半導体層
6 イオン注入層
10 バルク領域
12 絶縁性表面
100 絶縁基板
190 単結晶シリコン層
191 単結晶シリコントランジスタ層
200、201 単結晶シリコン基板
210 第1のSiO2膜
220 水素イオン注入層
230 第1のSiO2膜
240 a−Si膜
240p p−Si膜
191’、240’ 半導体層
270、271、272、273、274 ゲート電極
260 ゲート絶縁膜
280 層間絶縁膜
300 金属配線
500,501 フォトレジスト
20、600、601、602、603 単結晶半導体層を備えた基板(半導体装置)
Claims (26)
- 絶縁性表面を有する基板と、前記基板の絶縁性表面に接合された単結晶半導体層とを備えた半導体装置であって、
前記基板の絶縁性表面と前記単結晶半導体層との間に位置する第1の絶縁層と、
前記基板の絶縁性表面のうち、前記第1の絶縁層が存在しない領域に堆積された第2の絶縁層と
を有している半導体装置。 - 前記第2の絶縁層の端部の位置は前記第1の絶縁層の端部の位置に整合している請求項1に記載の半導体装置。
- 前記第1の絶縁層の厚さと前記第2の絶縁層の厚さとが略等しい請求項1または2に記載の半導体装置。
- 前記第2の絶縁層の上に形成された非単結晶半導体層をさらに有する請求項1から3のいずれかに記載の半導体装置。
- 絶縁性表面を有する基板と、
前記基板の絶縁性表面のうち選択された領域の上に接合された単結晶半導体層と、
前記基板の絶縁性表面と前記単結晶半導体層との間に位置する第1の絶縁層と、
前記絶縁性表面のうち、前記第1の絶縁層が存在しない領域に堆積された第2の絶縁層と、
前記第1の絶縁層の上に形成され、前記単結晶半導体層の少なくとも一部を含む単結晶半導体デバイスと、
前記第2の絶縁層の上に形成された非単結晶半導体デバイスと
を有する半導体デバイスを備えた装置。 - 前記第2の絶縁層の端部の位置は前記第1の絶縁層の端部の位置に整合している請求項5に記載の半導体デバイスを備えた装置。
- 前記第1の絶縁層の厚さと前記第2の絶縁層の厚さとが略等しい請求項5または6に記載の半導体デバイスを備えた装置。
- 前記非単結晶半導体デバイスは、前記第2の絶縁層の上に形成された非単結晶半導体層の少なくとも一部を含む請求項5から7のいずれかに記載の半導体デバイスを備えた装置。
- 前記単結晶半導体デバイスは、前記単結晶半導体層の少なくとも一部をチャネル領域として含む薄膜トランジスタであり、前記非単結晶半導体デバイスは、前記非単結晶半導体層の少なくとも一部をチャネル領域として含む薄膜トランジスタである請求項8に記載の半導体デバイスを備えた装置。
- 前記第2の絶縁層と前記非単結晶半導体層との間で、かつ前記単結晶半導体層と前記非単結晶半導体層との間に、第3の絶縁層をさらに有し、
前記単結晶半導体デバイスは、前記第3の絶縁層上に設けられたゲート電極をさらに有し、
前記非単結晶半導体デバイスは、前記非単結晶半導体層を覆うゲート絶縁膜と、前記ゲート絶縁膜上に設けられたゲート電極とをさらに有し、
前記第3の絶縁層は、前記非単結晶半導体デバイスの前記ゲート絶縁膜よりも薄い請求項9に記載の半導体デバイスを備えた装置。 - 前記単結晶半導体デバイスのゲート電極と、前記非単結晶半導体デバイスのチャネル領域とは、同一の多結晶半導体膜から形成されている請求項9または10に記載の半導体デバイスを備えた装置。
- (a)表面に形成された第1の絶縁層と、前記表面から所定の深さに形成され、水素イオンまたは希ガスイオンを含むイオン注入層と、前記第1の絶縁層および前記イオン注入層の間に位置する単結晶半導体層とを有する単結晶半導体基板を用意する工程と、
(b)絶縁性表面を有する支持基板を用意する工程と、
(c)前記第1の絶縁層が前記支持基板の絶縁性表面に接するように、前記支持基板の絶縁性表面の選択された領域に前記単結晶半導体基板を接合する工程と、
(d)前記単結晶半導体基板を覆うように第2絶縁層を前記支持基板上に堆積する工程と、
(e)前記第1の絶縁層および前記単結晶半導体層を前記支持基板上に残したまま、前記単結晶半導体基板を覆う第2の絶縁層および前記単結晶半導体基板を前記支持基板から取り除く工程と、
を包含する半導体装置の製造方法。 - 前記工程(d)において、前記第2の絶縁層は、その厚さが前記第1の絶縁層の厚さと略等しいか、または、前記第1の絶縁層の厚さよりも大きくなるように堆積される請求項12に記載の半導体装置の製造方法。
- 前記工程(d)は350℃以下の温度で実行される請求項12または13に記載の半導体装置の製造方法。
- 前記工程(e)は、前記単結晶半導体基板を加熱することにより、前記単結晶半導体基板の温度を400℃以上650℃以下の範囲に上昇させ、それによって前記単結晶半導体層を前記単結晶半導体基板から分離する工程を含む請求項12から14のいずれかに記載の半導体装置の製造方法。
- 前記工程(e)の後に、前記第2の絶縁層および前記単結晶半導体層の一部をエッチングすることにより、前記第2の絶縁層および前記単結晶半導体層を薄くし、前記第2の絶縁層の厚さを前記第1の絶縁層の厚さと略等しくする工程(m)をさらに含む請求項12から15のいずれかに記載の半導体装置の製造方法。
- 前記工程(d)の後、前記工程(e)の前に、
非晶質半導体膜を前記第2の絶縁層の上に形成する工程(d2)をさらに包含する請求項12から15のいずれかに記載の半導体装置の製造方法。 - 前記工程(e)は、前記単結晶半導体基板から前記単結晶半導体層を分離するとともに、前記非晶質半導体膜に含まれる水素を除去するように行なわれる請求項17に記載の半導体装置の製造方法。
- (a)表面に形成された第1の絶縁層と、前記表面から所定の深さに形成され、水素イオンまたは希ガスイオンを含むイオン注入層と、前記第1の絶縁層および前記イオン注入層の間に位置する単結晶半導体層とを有する単結晶半導体基板を用意する工程と、
(b)絶縁性表面を有する支持基板を用意する工程と、
(c)前記第1の絶縁層が前記支持基板の絶縁性表面に接するように、前記支持基板の絶縁性表面の選択された領域に前記単結晶半導体基板を接合する工程と、
(d)前記単結晶半導体基板を覆うように第2絶縁層を前記支持基板上に堆積する工程と、
(e)前記第1の絶縁層および前記単結晶半導体層を前記支持基板上に残したまま、前記単結晶半導体基板を覆う第2の絶縁層および前記単結晶半導体基板を前記支持基板から取り除く工程であって、これにより、前記支持基板の絶縁性表面の一部の上に、前記第1の絶縁層および前記単結晶半導体層を有し、かつ、前記支持基板の絶縁性表面のうち前記第1の絶縁層が存在しない領域に前記第2の絶縁層を有する半導体装置が形成される、工程と、
(f)前記半導体装置の前記第1の絶縁層の上に、前記単結晶半導体層の少なくとも一部を含む単結晶半導体デバイスを形成し、前記半導体装置の前記第2の絶縁層の上に、非単結晶半導体デバイスを形成する工程と、
を包含する半導体デバイスを備えた装置の製造方法。 - 前記工程(d)の後、前記工程(e)の前に、非晶質半導体膜を前記第2の絶縁層の上に形成する工程(d2)をさらに包含する請求項19に記載の半導体デバイスを備えた装置の製造方法。
- 前記工程(e)の後、前記工程(f)の前に、
(h)前記単結晶半導体層および前記第2の絶縁層の上に、第3の絶縁層を形成する工程と、
(i)前記第3の絶縁層の上に、非晶質半導体膜を形成する工程と
をさらに包含する請求項19に記載の半導体デバイスを備えた装置の製造方法。 - 前記工程(f)は、
(f2)前記非晶質半導体膜を結晶化して多結晶半導体膜を形成する工程と、
(f3)前記多結晶半導体膜をパターニングする工程と
をさらに包含する請求項20または21に記載の半導体デバイスを備えた装置の製造方法。 - 前記工程(f)で形成される前記単結晶半導体デバイスおよび前記非単結晶半導体デバイスは、いずれも薄膜トランジスタである請求項19から22のいずれかに記載の半導体デバイスを備えた装置の製造方法。
- 前記工程(a)で用意する前記単結晶半導体基板には、前記イオン注入層および前記第1の絶縁層の間に、前記単結晶半導体層の少なくとも一部をチャネル領域として含む複数の、トランジスタ構造の少なくとも一部が形成されている請求項19から23のいずれかに記載の半導体デバイスを備えた装置の製造方法。
- 前記工程(f)は、
(f2)前記非晶質半導体膜を結晶化して多結晶半導体膜を形成する工程と、
(f3)前記多結晶半導体膜をパターニングする工程と
を含み、前記非単結晶半導体デバイスは、前記多結晶半導体膜の少なくとも一部をチャネル領域として含む薄膜トランジスタであり、前記単結晶半導体デバイスは、前記多結晶半導体膜の少なくとも一部をゲート電極として含む薄膜トランジスタである請求項21に記載の半導体デバイスを備えた装置の製造方法。 - 前記工程(f)で形成される前記単結晶半導体デバイスおよび前記非単結晶半導体デバイスは、いずれも薄膜トランジスタであり、前記工程(f)は、
(f2’)前記第3の絶縁層上に前記単結晶半導体デバイスのゲート電極を設ける工程と、
(f2)前記非晶質半導体膜を結晶化して多結晶半導体膜を形成する工程と、
(f3)前記多結晶半導体膜をパターニングする工程と
(f4)前記パターニングされた多結晶半導体膜を覆うゲート絶縁膜を形成する工程と、
(f5)前記ゲート絶縁膜上に前記非単結晶半導体デバイスのゲート電極を設ける工程とを含み、
前記工程(h)で形成される前記第3の絶縁層の厚さは、前記工程(f4)で形成されるゲート絶縁膜の厚さよりも小さい請求項21に記載の半導体デバイスを備えた装置の製造方法。
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