JP2005203643A - 高周波スイッチ - Google Patents
高周波スイッチ Download PDFInfo
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- JP2005203643A JP2005203643A JP2004009878A JP2004009878A JP2005203643A JP 2005203643 A JP2005203643 A JP 2005203643A JP 2004009878 A JP2004009878 A JP 2004009878A JP 2004009878 A JP2004009878 A JP 2004009878A JP 2005203643 A JP2005203643 A JP 2005203643A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
- H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/44—Transmit/receive switching
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- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Electronic Switches (AREA)
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
【解決手段】 高周波信号を切り替える直列接続された少なくとも3つのFETを含むスイッチにおいて、前記直列に接続された構成の中間段にあるFET102のソース電極又はドレイン電極の幅は、初段及び最終段にあるFET301、302のソース電極またはドレイン電極の幅よりも細い。この構成により、中間段にある対地寄生容量を減らすことができ、オフ状態の直列接続されたFETにかかる電圧の均一化によるハンドリングパワーの改善を簡素かつ低コストで実現することができる。
【選択図】 図7
Description
Mitchell B. Shifrin, et al., "Monolithic FET structures for Hight-Power Control Component Applications",IEEE Transactions on Microwave Theory and Techniques, Vol. 37, No. 12, December 1989, pp. 2134-2141
101、102、103 FET
12 RFライン 14 グランド(GND)ライン
161、162、163 FET形成領域
181、182、183 ゲート電極配線
201、202、203 ソース/ドレイン(S/D)電極配線
221、222、223 ソース/ドレイン(S/D)電極配線
Claims (5)
- 高周波信号を切り替える直列接続された少なくとも3つのFETにおいて、
前記FETの中間段にあるソース電極又はドレイン電極の幅は、初段及び最終段にあるFETのソース電極またはドレイン電極の幅よりも細いことを特徴とするスイッチ。 - 前記FETは、4つ以上であることを特徴する請求項1記載のスイッチ。
- 前記FETの初段及び最終段以外のFETのソース電極又はドレイン電極の幅は、前記初段及び最終段のFETのソース電極又はドレイン電極よりも細いことを特徴とする請求項2記載のスイッチ。
- 前記初段及び最終段以外のFETのゲート電極幅の総計は、前記初段及び最終段のFETのゲート電極幅の総計よりも小さいことを特徴とする請求項1記載のスイッチ。
- 前記初段及び最終段以外のFETのゲート電極に沿った電極配線部分の長さは、前記初段及び最終段のFETのゲート電極に沿った電極配線部分の長さよりも短いことを特徴とする請求項1記載のスイッチ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004009878A JP4024762B2 (ja) | 2004-01-16 | 2004-01-16 | 高周波スイッチ |
US11/034,755 US7561853B2 (en) | 2004-01-16 | 2005-01-14 | Radio frequency switch |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004009878A JP4024762B2 (ja) | 2004-01-16 | 2004-01-16 | 高周波スイッチ |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005203643A true JP2005203643A (ja) | 2005-07-28 |
JP2005203643A5 JP2005203643A5 (ja) | 2005-09-08 |
JP4024762B2 JP4024762B2 (ja) | 2007-12-19 |
Family
ID=34822772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004009878A Expired - Fee Related JP4024762B2 (ja) | 2004-01-16 | 2004-01-16 | 高周波スイッチ |
Country Status (2)
Country | Link |
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US (1) | US7561853B2 (ja) |
JP (1) | JP4024762B2 (ja) |
Cited By (20)
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JP2007259112A (ja) * | 2006-03-23 | 2007-10-04 | Matsushita Electric Ind Co Ltd | 高周波スイッチ回路および半導体装置 |
JP2008011320A (ja) * | 2006-06-30 | 2008-01-17 | Sony Corp | 半導体スイッチ回路並びに通信機器 |
JP2008181911A (ja) * | 2007-01-23 | 2008-08-07 | Eudyna Devices Inc | 半導体装置 |
JP2010527179A (ja) * | 2007-04-26 | 2010-08-05 | ペレグリン セミコンダクター コーポレイション | スタック電圧耐性を高めるためのキャパシタンス調整 |
JP2011515832A (ja) * | 2008-02-28 | 2011-05-19 | ペレグリン セミコンダクター コーポレーション | 集積回路素子内でキャパシタをデジタル処理で同調するときに用いられる方法及び装置 |
JP2011249466A (ja) * | 2010-05-25 | 2011-12-08 | Renesas Electronics Corp | 半導体装置 |
KR20150017688A (ko) * | 2013-08-07 | 2015-02-17 | 스카이워크스 솔루션즈, 인코포레이티드 | 전계 효과 트랜지스터 스택 전압 보상 |
JP2016171498A (ja) * | 2015-03-13 | 2016-09-23 | 株式会社東芝 | 半導体スイッチ |
US9948281B2 (en) | 2016-09-02 | 2018-04-17 | Peregrine Semiconductor Corporation | Positive logic digitally tunable capacitor |
US10236872B1 (en) | 2018-03-28 | 2019-03-19 | Psemi Corporation | AC coupling modules for bias ladders |
US10404252B2 (en) | 2017-06-07 | 2019-09-03 | Murata Manufacturing Co., Ltd. | Bidirectional switch circuit and switch device |
US10505530B2 (en) | 2018-03-28 | 2019-12-10 | Psemi Corporation | Positive logic switch with selectable DC blocking circuit |
US10622990B2 (en) | 2005-07-11 | 2020-04-14 | Psemi Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink |
US10790390B2 (en) | 2005-07-11 | 2020-09-29 | Psemi Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
US10790820B2 (en) | 2001-10-10 | 2020-09-29 | Psemi Corporation | Switch circuit and method of switching radio frequency signals |
US10804892B2 (en) | 2005-07-11 | 2020-10-13 | Psemi Corporation | Circuit and method for controlling charge injection in radio frequency switches |
US10818796B2 (en) | 2005-07-11 | 2020-10-27 | Psemi Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
US10886911B2 (en) | 2018-03-28 | 2021-01-05 | Psemi Corporation | Stacked FET switch bias ladders |
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Also Published As
Publication number | Publication date |
---|---|
US7561853B2 (en) | 2009-07-14 |
JP4024762B2 (ja) | 2007-12-19 |
US20060160520A1 (en) | 2006-07-20 |
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