JP2005136400A - 研磨パッド - Google Patents
研磨パッド Download PDFInfo
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- JP2005136400A JP2005136400A JP2004295816A JP2004295816A JP2005136400A JP 2005136400 A JP2005136400 A JP 2005136400A JP 2004295816 A JP2004295816 A JP 2004295816A JP 2004295816 A JP2004295816 A JP 2004295816A JP 2005136400 A JP2005136400 A JP 2005136400A
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- polishing pad
- polishing
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- 238000005498 polishing Methods 0.000 title claims abstract description 95
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- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 claims description 8
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- ALQLPWJFHRMHIU-UHFFFAOYSA-N 1,4-diisocyanatobenzene Chemical compound O=C=NC1=CC=C(N=C=O)C=C1 ALQLPWJFHRMHIU-UHFFFAOYSA-N 0.000 description 1
- SBJCUZQNHOLYMD-UHFFFAOYSA-N 1,5-Naphthalene diisocyanate Chemical compound C1=CC=C2C(N=C=O)=CC=CC2=C1N=C=O SBJCUZQNHOLYMD-UHFFFAOYSA-N 0.000 description 1
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- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 1
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- WABOBVQONKAELR-UHFFFAOYSA-N 2-methyl-4-(2-methylbutan-2-yl)benzene-1,3-diamine Chemical compound CCC(C)(C)C1=CC=C(N)C(C)=C1N WABOBVQONKAELR-UHFFFAOYSA-N 0.000 description 1
- QWGRWMMWNDWRQN-UHFFFAOYSA-N 2-methylpropane-1,3-diol Chemical compound OCC(C)CO QWGRWMMWNDWRQN-UHFFFAOYSA-N 0.000 description 1
- SXFJDZNJHVPHPH-UHFFFAOYSA-N 3-methylpentane-1,5-diol Chemical compound OCCC(C)CCO SXFJDZNJHVPHPH-UHFFFAOYSA-N 0.000 description 1
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- VIOMIGLBMQVNLY-UHFFFAOYSA-N 4-[(4-amino-2-chloro-3,5-diethylphenyl)methyl]-3-chloro-2,6-diethylaniline Chemical compound CCC1=C(N)C(CC)=CC(CC=2C(=C(CC)C(N)=C(CC)C=2)Cl)=C1Cl VIOMIGLBMQVNLY-UHFFFAOYSA-N 0.000 description 1
- AOFIWCXMXPVSAZ-UHFFFAOYSA-N 4-methyl-2,6-bis(methylsulfanyl)benzene-1,3-diamine Chemical compound CSC1=CC(C)=C(N)C(SC)=C1N AOFIWCXMXPVSAZ-UHFFFAOYSA-N 0.000 description 1
- DVPHIKHMYFQLKF-UHFFFAOYSA-N 4-tert-butyl-2-methylbenzene-1,3-diamine Chemical compound CC1=C(N)C=CC(C(C)(C)C)=C1N DVPHIKHMYFQLKF-UHFFFAOYSA-N 0.000 description 1
- 239000004604 Blowing Agent Substances 0.000 description 1
- 239000005058 Isophorone diisocyanate Substances 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- ALQSHHUCVQOPAS-UHFFFAOYSA-N Pentane-1,5-diol Chemical compound OCCCCCO ALQSHHUCVQOPAS-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 229920002396 Polyurea Polymers 0.000 description 1
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000004984 aromatic diamines Chemical group 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 description 1
- BMRWNKZVCUKKSR-UHFFFAOYSA-N butane-1,2-diol Chemical compound CCC(O)CO BMRWNKZVCUKKSR-UHFFFAOYSA-N 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
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- POAHJTISJZSSFK-UHFFFAOYSA-N chloro(phenyl)methanediamine Chemical compound NC(N)(Cl)C1=CC=CC=C1 POAHJTISJZSSFK-UHFFFAOYSA-N 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
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- 150000004985 diamines Chemical class 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229920001038 ethylene copolymer Polymers 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
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- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
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- 238000000465 moulding Methods 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
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- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001610 polycaprolactone Polymers 0.000 description 1
- 239000004632 polycaprolactone Substances 0.000 description 1
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- 229920005906 polyester polyol Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000582 polyisocyanurate Polymers 0.000 description 1
- 239000011495 polyisocyanurate Substances 0.000 description 1
- 229920001470 polyketone Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920003226 polyurethane urea Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 description 1
- 239000003190 viscoelastic substance Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
- B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/40—High-molecular-weight compounds
- C08G18/48—Polyethers
- C08G18/4854—Polyethers containing oxyalkylene groups having four carbon atoms in the alkylene group
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D13/00—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor
- B24D13/14—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by the front face
- B24D13/147—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by the front face comprising assemblies of felted or spongy material; comprising pads surrounded by a flexible material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/22—Rubbers synthetic or natural
- B24D3/26—Rubbers synthetic or natural for porous or cellular structure
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/08—Processes
- C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
Abstract
【解決手段】半導体基材を平坦化するのに有用な研磨パッドである。研磨パッドは、少なくとも0.1容量%の気孔率、40℃及び1rad/secで385〜750 l/PaのKELエネルギー損失係数ならびに40℃及び1rad/secで100〜400MPaの弾性率E′を有するポリマー材料を含む。
【選択図】なし
Description
表4は、40℃及び10rad/secで計測された弾性率及びエネルギー損失を、i)銅シートウェーハ及びパターニングされたCu/Ta/TEOSウェーハの欠陥率ならびにii)計測したパターニングされたCu/Ta/TEOSウェーハのディッシング及びエロージョンで対比したものである。
表5A及び5Bは、40℃及び1rad/secで計測された弾性率及びエネルギー損失を、i)銅シートウェーハ及びパターニングされたCu/Ta/TEOSウェーハの欠陥率ならびにii)パターニングされたCu/Ta/TEOSウェーハのディッシング及びエロージョンで対比したものである。
この例は、研磨パッド2と比較研磨パッドDとでTEOS(テトラエチルオルトシリケート前駆体から析出した二酸化ケイ素)及びタングステン研磨特性を比較した。研磨パッドDは、IC1000(商標)ポリウレタン研磨パッドと等価である。この比較は、200mmのTEOSウェーハ及び200mmのタングステンウェーハに対して、IPEC472研磨機を5psi(34.5kPa)、65rpmプラテン速度、50rpmキャリヤ速度で使用し、MSW1500アルミナ砥粒含有スラリー(Rodel社)を150ml/minで導入した。
Claims (5)
- 半導体基材を平坦化するのに有用な研磨パッドであって、少なくとも0.1容量%の気孔率、40℃及び1rad/secで385〜750 l/PaのKELエネルギー損失係数ならびに40℃及び1rad/secで100〜400MPaの弾性率E′を有するポリマー材料を含む研磨パッド。
- 半導体基材を平坦化するのに有用な研磨パッドであって、少なくとも0.1容量%の気孔率、40℃及び1rad/secで405〜600 l/PaのKELエネルギー損失係数、40℃及び1rad/secで140〜300MPaの弾性率E′ならびに20〜60のショアD硬さを有するポリマー材料を含む研磨パッド。
- 半導体基材を平坦化するのに有用な研磨パッドであって、少なくとも0.1容量%の気孔率を有するポリウレタンポリマー材料を含み、前記ポリウレタンポリマー材料が、トルエンジイソシアネートとポリテトラメチレンエーテルグリコールとのプレポリマー反応生成物と、4,4′−メチレン−ビス−o−クロロアニリンとから形成され、前記プレポリマー反応生成物が、5.5〜8.6重量%のNCOを有し、NH2対NCOの化学量論比80対110%を有するものである研磨パッド。
- 少なくとも0.1容量%の気孔率、40℃及び1rad/secで405〜600 l/PaのKELエネルギー損失係数、40℃及び1rad/secで140〜300MPaの弾性率E′ならびに20〜60のショアD硬さを有するポリマー材料を含む、請求項6記載の研磨パッド。
- 半導体基材を研磨する方法であって、少なくとも0.1容量%の気孔率、40℃及び1rad/secで385〜750 l/PaのKELエネルギー損失係数ならびに40℃及び1rad/secで100〜400MPaの弾性率E′を有するポリマー材料を含む、半導体基材を平坦化するのに有用な研磨パッドを用いて半導体基材を研磨する工程を含む方法。
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US68215803A | 2003-10-09 | 2003-10-09 | |
US10/682,158 | 2003-10-09 | ||
US10/937,914 US7074115B2 (en) | 2003-10-09 | 2004-09-10 | Polishing pad |
US10/937,914 | 2004-09-10 |
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JP2005136400A true JP2005136400A (ja) | 2005-05-26 |
JP2005136400A5 JP2005136400A5 (ja) | 2011-03-31 |
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EP (1) | EP1522385B1 (ja) |
JP (1) | JP4722446B2 (ja) |
KR (1) | KR101092944B1 (ja) |
CN (1) | CN100353502C (ja) |
DE (1) | DE602004010871T2 (ja) |
SG (1) | SG111222A1 (ja) |
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JP2007042923A (ja) * | 2005-08-04 | 2007-02-15 | Toyo Tire & Rubber Co Ltd | Cu膜研磨用研磨パッド |
JP2007313641A (ja) * | 2006-05-25 | 2007-12-06 | Rohm & Haas Electronic Materials Cmp Holdings Inc | ケミカルメカニカル研磨パッド |
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JP2012528487A (ja) * | 2009-05-27 | 2012-11-12 | ロジャーズ コーポレーション | 研磨パッド、それを用いた組成物および、その製造と使用方法 |
JP2015051498A (ja) * | 2013-09-04 | 2015-03-19 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | ポリウレタン研磨パッド |
CN105382680A (zh) * | 2014-08-22 | 2016-03-09 | 陶氏环球技术有限责任公司 | 聚氨酯抛光垫 |
WO2019074098A1 (ja) | 2017-10-12 | 2019-04-18 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
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KR20200128180A (ko) | 2018-03-30 | 2020-11-11 | 후지보홀딩스가부시끼가이샤 | 연마 패드 및 그의 제조 방법 |
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Also Published As
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EP1522385A2 (en) | 2005-04-13 |
KR101092944B1 (ko) | 2011-12-12 |
KR20050034554A (ko) | 2005-04-14 |
CN1638056A (zh) | 2005-07-13 |
JP4722446B2 (ja) | 2011-07-13 |
EP1522385A3 (en) | 2006-03-15 |
CN100353502C (zh) | 2007-12-05 |
SG111222A1 (en) | 2005-05-30 |
EP1522385B1 (en) | 2007-12-26 |
DE602004010871D1 (de) | 2008-02-07 |
DE602004010871T2 (de) | 2008-12-11 |
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