JP5346445B2 - ケミカルメカニカル研磨パッド - Google Patents
ケミカルメカニカル研磨パッド Download PDFInfo
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- JP5346445B2 JP5346445B2 JP2007138565A JP2007138565A JP5346445B2 JP 5346445 B2 JP5346445 B2 JP 5346445B2 JP 2007138565 A JP2007138565 A JP 2007138565A JP 2007138565 A JP2007138565 A JP 2007138565A JP 5346445 B2 JP5346445 B2 JP 5346445B2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
- B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Description
ウレタンプレポリマーとしての様々な量のイソシアネートと、4,4′−メチレン−ビス−o−クロロアニリン[MBCA]とを、プレポリマーの場合には50℃で、MBCAの場合には116℃で混合することにより、ポリマーパッド材料を調製した。特に、種々のトルエンジイソシアネート[TDI]とポリテトラメチレンエーテルグリコール[PTMEG]とのプレポリマーが様々な性質を研磨パッドに付与した。ウレタン/多官能性アミン混合物は、プレポリマーを連鎖延長剤と混合する前又は後で、中空のポリマー微小球(AkzoNobel製のEXPANCEL(登録商標)551DE20d60又は551DE40d42)と混合した。微小球は、5〜200μmの範囲で15〜50μmの重量平均直径を有するものであり、高剪断混合機を使用して約3,600rpmでブレンドして混合物中に均一に分散させた。最終混合物を型に移し、約15分間ゲル化させた。
実施例1の工程で調製したケークから厚さ80ミル(2.0mm)、直径22.5インチ(57cm)のパッドを切り出した。パッドは、幅20ミル(0.51mm)、深さ30ミル(0.76mm)、ピッチ70ミル(1.8mm)の円形の溝パターンをSP2150ポリウレタンサブパッドとともに含むものであった。SpeedFam-IPEC472ツールを用いてプラテン1上5psi(34.5kPa)、プラテン速度75rpm、キャリヤ速度50rpmで研磨して、種々のパッドに関する比較用の研磨データを得た。研磨はまた、Kinik CG181060ダイアモンドコンディショナに基づくものであった。試験ウェーハは、Rohm and Haas Electronic Materials CMP TechnologiesからのCelexis(商標)CX2000Aセリア含有スラリーの平坦化を計測するための、TEOSシートウェーハ、窒化ケイ素シートウェーハ及び1HDT MITパターンウェーハを含むものであった。
Claims (7)
- 半導体、光学及び磁性基材の少なくとも一つを平坦化するのに適した研磨パッドであって、ポリマーマトリックスを含み、前記ポリマーマトリックスが上研磨面を有し、前記上研磨面が、研磨面の表面に機械加工して得たポリマー研磨アスペリティを有するか、砥粒でコンディショニングされるとポリマー研磨アスペリティを形成し、
前記ポリマー研磨アスペリティが、前記ポリマーマトリックスから延び、研磨中に基材と接することができる前記上研磨面の部分であり、
前記ポリマーマトリックスが、二官能性又は多官能性イソシアネートから誘導されるポリマーを含み、ここで、前記ポリマーは、ポリエーテルウレア、ポリイソシアヌレート、ポリウレタン、ポリウレア、ポリウレタンウレア、それらのコポリマー及びそれらの混合物から選択される少なくとも一つを含み、
前記ポリマーマトリックスが、硬化剤とイソシアネート終端化プレポリマーとの反応生成物からのものであり、
前記硬化剤が、前記イソシアネート終端化プレポリマーを硬化させる硬化剤アミンを含み、
前記硬化剤及び前記イソシアネート終端化プレポリマーが、90〜125%の、NCOに対するNH2の化学量論比を有し、
前記研磨パッドが、前記上研磨面の摩耗又はコンディショニングによって前記ポリマーマトリックスからさらなるポリマー研磨アスペリティを形成し、
前記ポリマー研磨アスペリティが、少なくとも6,500psi(44.8MPa)のバルク極限引張り強さ及び少なくとも250lb/in(4.5×103g/mm)のバルク引裂き強さを有するポリマーマトリックスからのものである研磨パッド。 - 前記バルク引裂き強さが250〜750lb/in(4.5×103〜13.4×103g/mm)である、請求項1記載の研磨パッド。
- 前記バルク引張り強さが6,500〜14,000psi(44.8〜96.5MPa)であり、前記ポリマーマトリックスが、少なくとも200%のバルク破断伸びを有する、請求項1記載の研磨パッド。
- 半導体、光学及び磁性基材の少なくとも一つを平坦化するのに適した研磨パッドであって、ポリマーマトリックスを含み、前記ポリマーマトリックスが上研磨面を有し、前記上研磨面が、研磨面の表面に機械加工して得たポリマー研磨アスペリティを有するか、砥粒でコンディショニングされるとポリマー研磨アスペリティを形成し、
前記ポリマー研磨アスペリティが、前記ポリマーマトリックスから延び、研磨中に基材と接することができる前記上研磨面の部分であり、
前記ポリマーマトリックスが、二官能性又は多官能性イソシアネートから誘導されるポリマーを含み、ここで、前記ポリマーは、ポリエーテルウレア、ポリイソシアヌレート、ポリウレタン、ポリウレア、ポリウレタンウレア、それらのコポリマー及びそれらの混合物から選択される少なくとも一つを含み、
前記ポリマーマトリックスが、硬化剤とイソシアネート終端化プレポリマーとの反応生成物からのものであり、
前記硬化剤が、前記イソシアネート終端化プレポリマーを硬化させる硬化剤アミンを含み、
前記硬化剤及び前記イソシアネート終端化プレポリマーが、100%超、125%以下の、NCOに対するNH2の化学量論比を有し、
前記ポリマーマトリックスが、6,500〜14,000psi(44.8〜96.5MPa)のバルク極限引張り強さ及び250〜750lb/in(4.5×103〜13.4×103g/mm)のバルク引裂き強さを有するものである研磨パッド。 - 前記バルク引裂き強さが275〜700lb/in(4.9×103〜12.5×103g/mm)である、請求項4記載の研磨パッド。
- 前記バルク極限引張り強さが6,750〜10,000psi(46.5〜68.9MPa)であり、前記ポリマーマトリックスが、少なくとも200%のバルク破断伸びを有する、請求項4記載の研磨パッド。
- 前記ポリマーマトリックス内で25〜65容量%の気孔率及び2〜50μmの平均孔径を含む、請求項4記載の研磨パッド。
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