JP5346446B2 - ケミカルメカニカル研磨パッド - Google Patents
ケミカルメカニカル研磨パッド Download PDFInfo
- Publication number
- JP5346446B2 JP5346446B2 JP2007138566A JP2007138566A JP5346446B2 JP 5346446 B2 JP5346446 B2 JP 5346446B2 JP 2007138566 A JP2007138566 A JP 2007138566A JP 2007138566 A JP2007138566 A JP 2007138566A JP 5346446 B2 JP5346446 B2 JP 5346446B2
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- Japan
- Prior art keywords
- polishing
- polymer
- polymer matrix
- isocyanate
- asperity
- Prior art date
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
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- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 6
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- 150000003672 ureas Chemical class 0.000 description 3
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 2
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 2
- VIOMIGLBMQVNLY-UHFFFAOYSA-N 4-[(4-amino-2-chloro-3,5-diethylphenyl)methyl]-3-chloro-2,6-diethylaniline Chemical compound CCC1=C(N)C(CC)=CC(CC=2C(=C(CC)C(N)=C(CC)C=2)Cl)=C1Cl VIOMIGLBMQVNLY-UHFFFAOYSA-N 0.000 description 2
- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 239000005062 Polybutadiene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
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- 239000000654 additive Substances 0.000 description 2
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- 238000012876 topography Methods 0.000 description 2
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- SBJCUZQNHOLYMD-UHFFFAOYSA-N 1,5-Naphthalene diisocyanate Chemical compound C1=CC=C2C(N=C=O)=CC=CC2=C1N=C=O SBJCUZQNHOLYMD-UHFFFAOYSA-N 0.000 description 1
- AXKZIDYFAMKWSA-UHFFFAOYSA-N 1,6-dioxacyclododecane-7,12-dione Chemical compound O=C1CCCCC(=O)OCCCCO1 AXKZIDYFAMKWSA-UHFFFAOYSA-N 0.000 description 1
- PISLZQACAJMAIO-UHFFFAOYSA-N 2,4-diethyl-6-methylbenzene-1,3-diamine Chemical compound CCC1=CC(C)=C(N)C(CC)=C1N PISLZQACAJMAIO-UHFFFAOYSA-N 0.000 description 1
- BSYVFGQQLJNJJG-UHFFFAOYSA-N 2-[2-(2-aminophenyl)sulfanylethylsulfanyl]aniline Chemical compound NC1=CC=CC=C1SCCSC1=CC=CC=C1N BSYVFGQQLJNJJG-UHFFFAOYSA-N 0.000 description 1
- WABOBVQONKAELR-UHFFFAOYSA-N 2-methyl-4-(2-methylbutan-2-yl)benzene-1,3-diamine Chemical compound CCC(C)(C)C1=CC=C(N)C(C)=C1N WABOBVQONKAELR-UHFFFAOYSA-N 0.000 description 1
- QWGRWMMWNDWRQN-UHFFFAOYSA-N 2-methylpropane-1,3-diol Chemical compound OCC(C)CO QWGRWMMWNDWRQN-UHFFFAOYSA-N 0.000 description 1
- MNARAEXGMVEFDO-UHFFFAOYSA-N 3-(2-fluoroethyl)-8-[4-(4-fluorophenyl)-4-oxobutyl]-1-phenyl-1,3,8-triazaspiro[4.5]decan-4-one Chemical compound C1CN(CCCC(=O)C=2C=CC(F)=CC=2)CCC21C(=O)N(CCF)CN2C1=CC=CC=C1 MNARAEXGMVEFDO-UHFFFAOYSA-N 0.000 description 1
- SXFJDZNJHVPHPH-UHFFFAOYSA-N 3-methylpentane-1,5-diol Chemical compound OCCC(C)CCO SXFJDZNJHVPHPH-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- AOFIWCXMXPVSAZ-UHFFFAOYSA-N 4-methyl-2,6-bis(methylsulfanyl)benzene-1,3-diamine Chemical compound CSC1=CC(C)=C(N)C(SC)=C1N AOFIWCXMXPVSAZ-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
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- OMRDSWJXRLDPBB-UHFFFAOYSA-N N=C=O.N=C=O.C1CCCCC1 Chemical compound N=C=O.N=C=O.C1CCCCC1 OMRDSWJXRLDPBB-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- ALQSHHUCVQOPAS-UHFFFAOYSA-N Pentane-1,5-diol Chemical compound OCCCCCO ALQSHHUCVQOPAS-UHFFFAOYSA-N 0.000 description 1
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- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
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- 238000001465 metallisation Methods 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
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- 229920000915 polyvinyl chloride Polymers 0.000 description 1
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- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Description
ウレタンプレポリマーとしての様々な量のイソシアネートと、4,4′−メチレン−ビス−o−クロロアニリン[MBCA]とを、プレポリマーの場合には50℃で、MBCAの場合には116℃で混合することにより、ポリマーパッド材料を調製した。特に、種々のトルエンジイソシアネート[TDI]とポリテトラメチレンエーテルグリコール[PTMEG]とのプレポリマーが様々な性質を研磨パッドに付与した。ウレタン/多官能性アミン混合物は、プレポリマーを連鎖延長剤と混合する前又は後で、中空のポリマー微小球(AkzoNobel製のEXPANCEL(登録商標)551DE20d60又は551DE40d42)と混合した。微小球は、5〜200μmの範囲で15〜50μmの重量平均直径を有するものであり、高剪断混合機を使用して約3,600rpmでブレンドして混合物中に均一に分散させた。最終混合物を型に移し、約15分間ゲル化させた。
図2A〜2Dは、SPM技術を使用して画像化したポリウレタンの4種の試料を示す。この技術は、試料の異なる領域の間の硬さに基づく差違を増幅して、硬質相及び軟質相を画像化することができるよう変更を加えたものであった。実験を実施するため、低いばね定数のFESPチップを使用してさらなる感度を得た。実験中、分析するすべての試料に関してすべてのサンプリングパラメータを一定に維持した。画像を修正するために0.8のセットポイント比を選択した。試料ごとの二つの画像は、左側が試料相分散を示し、右側がその同じ領域に関する対応するトポグラフィーを示す。
実施例1の工程で調製したケークから厚さ80ミル(2.0mm)、直径22.5インチ(57cm)のパッドを切り出した。パッドは、幅20ミル(0.51mm)、深さ30ミル(0.76mm)、ピッチ70ミル(1.8mm)の円形の溝パターンをSP2150ポリウレタンサブパッドとともに含むものであった。SpeedFam-IPEC472ツールを用いてプラテン1上5psi(34.5kPa)、プラテン速度75rpm、キャリヤ速度50rpmで研磨して、種々のパッドに関する比較用の研磨データを得た。研磨はまた、Kinik CG181060ダイアモンドコンディショナに基づくものであった。試験ウェーハは、Rohm and Haas Electronic Materials CMP TechnologiesからのCelexis(商標)CX2000Aセリア含有スラリーの平坦化を計測するための、TEOSシートウェーハ、窒化ケイ素シートウェーハ及び1HDT MITパターンウェーハを含むものであった。
Claims (3)
- 半導体、光学及び磁性基材の少なくとも一つを平坦化するのに適した研磨パッドであって、ポリマーマトリックスを含み、前記ポリマーマトリックスが上研磨面を有し、前記上研磨面が、ポリマー研磨アスペリティを有するか、砥粒でコンディショニングされるとポリマー研磨アスペリティを形成し、
前記ポリマー研磨アスペリティが、前記ポリマーマトリックスから延び、基材と接することができる前記上研磨面の部分であり、
前記研磨パッドが、前記上研磨面の摩耗又はコンディショニングによって前記ポリマーマトリックスからさらなるポリマー研磨アスペリティを形成し、
前記ポリマー研磨アスペリティが、50〜80重量%の硬質セグメント及び少なくとも6,500psi(44.8MPa)のバルク極限引張り強さを有するポリマーマトリックスからのものであり、
前記ポリマーマトリックスが、二官能性又は多官能性イソシアネートから誘導されるポリマーを含み、ここで、前記ポリマーは、ポリエーテルウレア、ポリイソシアヌレート、ポリウレタン、ポリウレア、ポリウレタンウレア、それらのコポリマー及びそれらの混合物から選択される少なくとも一つを含み、
前記ポリマーマトリックスが、硬化剤とイソシアネート終端化プレポリマーとの反応生成物からのものであり、
前記硬化剤が、前記イソシアネート終端化プレポリマーを硬化させる硬化剤アミンを含み、
前記イソシアネート終端化プレポリマーが、二官能性又は多官能性イソシアネートと、PTMEG又はPTMEG/PPGブレンドとから誘導され、かつ8.75〜12重量%の未反応NCOを有し、
前記硬化剤及び前記イソシアネート終端化プレポリマーが、100%より大きく、125%以下のNCOに対するNH2の化学量論比を有し、
前記ポリマーマトリックスが、硬質相と軟質相との二相構造を有し、前記二相構造が、1.6未満の前記軟質相の平均面積に対する前記硬質相の平均面積の比を有する研磨パッド。 - 半導体、光学及び磁性基材の少なくとも一つを平坦化するのに適した研磨パッドであって、ポリマーマトリックスを含み、前記ポリマーマトリックスが上研磨面を有し、前記上研磨面が、ポリマー研磨アスペリティを有するか、砥粒でコンディショニングされるとポリマー研磨アスペリティを形成し、
前記ポリマー研磨アスペリティが、前記ポリマーマトリックスから延び、基材と接することができる前記上研磨面の部分であり、
前記研磨パッドが、前記上研磨面の摩耗又はコンディショニングによって前記ポリマーマトリックスからさらなるポリマー研磨アスペリティを形成し、
前記ポリマー研磨アスペリティが、50〜80重量%の硬質セグメント及び6,500〜14,000psi(44.8〜96.5MPa)のバルク極限引張り強さを有するポリマーマトリックスからのものであり、
前記ポリマーマトリックスが、二官能性又は多官能性イソシアネートから誘導されるポリマーを含み、ここで、前記ポリマーは、ポリエーテルウレア、ポリイソシアヌレート、ポリウレタン、ポリウレア、ポリウレタンウレア、それらのコポリマー及びそれらの混合物から選択される少なくとも一つを含み、
前記ポリマーマトリックスが、硬化剤とイソシアネート終端化プレポリマーとの反応生成物からのものであり、
前記硬化剤が、前記イソシアネート終端化プレポリマーを硬化させる硬化剤アミンを含み、
前記イソシアネート終端化プレポリマーが、二官能性又は多官能性イソシアネートと、PTMEG又はPTMEG/PPGブレンドとから誘導され、かつ8.75〜12重量%の未反応NCOを有し、
前記硬化剤及び前記イソシアネート終端化プレポリマーが、100%より大きく、125%以下のNCOに対するNH2の化学量論比を有し、
前記ポリマーマトリックスが、硬質相と軟質相との二相構造を有し、前記二相構造が、1.6未満の前記軟質相の平均面積に対する前記硬質相の平均面積の比を有する研磨パッド。 - 前記ポリマーマトリックスが25〜50J/gの融解熱を有する、請求項2記載の研磨パッド。
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