JP2005134908A - 絶縁膜形成用組成物及びこれを用いた絶縁膜または絶縁膜パターンの形成方法 - Google Patents

絶縁膜形成用組成物及びこれを用いた絶縁膜または絶縁膜パターンの形成方法 Download PDF

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Publication number
JP2005134908A
JP2005134908A JP2004313955A JP2004313955A JP2005134908A JP 2005134908 A JP2005134908 A JP 2005134908A JP 2004313955 A JP2004313955 A JP 2004313955A JP 2004313955 A JP2004313955 A JP 2004313955A JP 2005134908 A JP2005134908 A JP 2005134908A
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Japan
Prior art keywords
carbon atoms
group
weight
solvent
independently
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JP2004313955A
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English (en)
Japanese (ja)
Inventor
Riretsu Ryu
利 烈 柳
Jin Heong Yim
珍 亨 林
Jong Baek Seon
鍾 白 宣
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of JP2005134908A publication Critical patent/JP2005134908A/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
JP2004313955A 2003-10-28 2004-10-28 絶縁膜形成用組成物及びこれを用いた絶縁膜または絶縁膜パターンの形成方法 Pending JP2005134908A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030075438A KR20050040275A (ko) 2003-10-28 2003-10-28 절연막 형성용 조성물 및 이를 이용한 절연막 또는 절연막패턴의 형성방법

Publications (1)

Publication Number Publication Date
JP2005134908A true JP2005134908A (ja) 2005-05-26

Family

ID=34511131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004313955A Pending JP2005134908A (ja) 2003-10-28 2004-10-28 絶縁膜形成用組成物及びこれを用いた絶縁膜または絶縁膜パターンの形成方法

Country Status (4)

Country Link
US (1) US20050090570A1 (zh)
JP (1) JP2005134908A (zh)
KR (1) KR20050040275A (zh)
CN (1) CN100497480C (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2004092840A1 (ja) * 2003-04-17 2006-07-06 日産化学工業株式会社 多孔質下層膜及び多孔質下層膜を形成するための下層膜形成組成物
JP2007070480A (ja) * 2005-09-07 2007-03-22 Fujifilm Corp 膜形成用組成物、絶縁膜およびその製造方法
JP2007254677A (ja) * 2006-03-24 2007-10-04 Tokyo Ohka Kogyo Co Ltd シリカ系被膜形成用組成物およびシリカ系被膜
JP2009036809A (ja) * 2007-07-31 2009-02-19 Ricoh Co Ltd クリーニングブレード、並びにこれを用いた画像形成方法、画像形成装置、及びプロセスカートリッジ
JP2010235850A (ja) * 2009-03-31 2010-10-21 Tokyo Ohka Kogyo Co Ltd 塗布液及び当該塗布液を用いるシリカ系被膜の形成方法
WO2012086370A1 (ja) * 2010-12-24 2012-06-28 株式会社Adeka 感光性樹脂組成物

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US20040058090A1 (en) * 2001-09-14 2004-03-25 Carlo Waldfried Low temperature UV pretreating of porous low-k materials
KR100589123B1 (ko) * 2004-02-18 2006-06-14 학교법인 서강대학교 기공형성용 템플레이트로 유용한 사이클로덱스트린유도체와 이를 이용하여 제조된 저유전체
JP4084772B2 (ja) * 2004-03-31 2008-04-30 松下電器産業株式会社 有機高分子膜の形成方法
US8901268B2 (en) * 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
US20070299176A1 (en) * 2005-01-28 2007-12-27 Markley Thomas J Photodefinable low dielectric constant material and method for making and using same
KR100685734B1 (ko) 2005-06-07 2007-02-26 삼성전자주식회사 다공성 스핀 온 글래스 조성물, 이의 제조 방법 및 이를이용한 다공성 실리콘 산화막 제조 방법
US20070299239A1 (en) * 2006-06-27 2007-12-27 Air Products And Chemicals, Inc. Curing Dielectric Films Under A Reducing Atmosphere
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
WO2012077770A1 (ja) * 2010-12-10 2012-06-14 旭硝子株式会社 ネガ型感光性樹脂組成物、光学素子用隔壁およびその製造方法、該隔壁を有する光学素子の製造方法、ならびに、撥インク剤溶液
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
WO2016167892A1 (en) 2015-04-13 2016-10-20 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
KR102084283B1 (ko) * 2015-12-16 2020-03-03 주식회사 엘지화학 전기절연재용 조성물, 이를 이용하여 제조된 전기절연막 및 이를 포함하는 회로기판 및 전자 소자
US11015082B2 (en) * 2017-12-19 2021-05-25 Honeywell International Inc. Crack-resistant polysiloxane dielectric planarizing compositions, methods and films
KR102426200B1 (ko) * 2018-01-23 2022-07-27 동우 화인켐 주식회사 절연막 형성용 조성물 및 이로부터 형성된 절연막
US11787987B2 (en) 2018-07-23 2023-10-17 Xerox Corporation Adhesive with substrate compatibilizing particles
US20210206939A1 (en) * 2020-01-02 2021-07-08 Palo Alto Research Center Incorporated Transparent, colorless, porous polymers derived from multiphasic polymer networks

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JPH06216024A (ja) * 1992-06-17 1994-08-05 Gold Star Electron Co Ltd 金属パターン膜の形成方法
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JPH06216024A (ja) * 1992-06-17 1994-08-05 Gold Star Electron Co Ltd 金属パターン膜の形成方法
JPH0792695A (ja) * 1993-09-27 1995-04-07 Nippon Paint Co Ltd 薄膜パターン形成法
JPH1083080A (ja) * 1996-06-26 1998-03-31 Dow Corning Asia Kk 紫外線硬化性組成物およびこれを用いた硬化物パターンの形成方法
JPH10268520A (ja) * 1997-03-27 1998-10-09 Hitachi Ltd パターン形成方法
JP2000298352A (ja) * 1999-04-14 2000-10-24 Jsr Corp 電子部品用材料およびその使用方法
JP2003529202A (ja) * 1999-04-14 2003-09-30 アライドシグナル インコーポレイテッド 重合体分解から得られる低誘電性ナノ多孔性材料
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2004092840A1 (ja) * 2003-04-17 2006-07-06 日産化学工業株式会社 多孔質下層膜及び多孔質下層膜を形成するための下層膜形成組成物
JP2007070480A (ja) * 2005-09-07 2007-03-22 Fujifilm Corp 膜形成用組成物、絶縁膜およびその製造方法
JP2007254677A (ja) * 2006-03-24 2007-10-04 Tokyo Ohka Kogyo Co Ltd シリカ系被膜形成用組成物およびシリカ系被膜
WO2007111271A1 (ja) * 2006-03-24 2007-10-04 Tokyo Ohka Kogyo Co., Ltd. シリカ系被膜形成用組成物およびシリカ系被膜
JP2009036809A (ja) * 2007-07-31 2009-02-19 Ricoh Co Ltd クリーニングブレード、並びにこれを用いた画像形成方法、画像形成装置、及びプロセスカートリッジ
JP2010235850A (ja) * 2009-03-31 2010-10-21 Tokyo Ohka Kogyo Co Ltd 塗布液及び当該塗布液を用いるシリカ系被膜の形成方法
TWI510572B (zh) * 2009-03-31 2015-12-01 Tokyo Ohka Kogyo Co Ltd A coating liquid and a method of forming a silica-based film using the coating liquid
WO2012086370A1 (ja) * 2010-12-24 2012-06-28 株式会社Adeka 感光性樹脂組成物

Also Published As

Publication number Publication date
CN100497480C (zh) 2009-06-10
US20050090570A1 (en) 2005-04-28
KR20050040275A (ko) 2005-05-03
CN1629222A (zh) 2005-06-22

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