JP2005129415A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2005129415A5 JP2005129415A5 JP2003365223A JP2003365223A JP2005129415A5 JP 2005129415 A5 JP2005129415 A5 JP 2005129415A5 JP 2003365223 A JP2003365223 A JP 2003365223A JP 2003365223 A JP2003365223 A JP 2003365223A JP 2005129415 A5 JP2005129415 A5 JP 2005129415A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- group
- insulating layer
- display device
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims 11
- 125000000217 alkyl group Chemical group 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- 230000000737 periodic effect Effects 0.000 claims 8
- 230000002093 peripheral effect Effects 0.000 claims 8
- 239000010409 thin film Substances 0.000 claims 8
- 150000002894 organic compounds Chemical class 0.000 claims 7
- 239000011159 matrix material Substances 0.000 claims 5
- 238000000576 coating method Methods 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 3
- 229910052786 argon Inorganic materials 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 2
- 229910052743 krypton Inorganic materials 0.000 claims 2
- 229910052745 lead Inorganic materials 0.000 claims 2
- 229910052754 neon Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910052718 tin Inorganic materials 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003365223A JP4785339B2 (ja) | 2003-10-24 | 2003-10-24 | 表示装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003365223A JP4785339B2 (ja) | 2003-10-24 | 2003-10-24 | 表示装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005129415A JP2005129415A (ja) | 2005-05-19 |
| JP2005129415A5 true JP2005129415A5 (enExample) | 2006-11-09 |
| JP4785339B2 JP4785339B2 (ja) | 2011-10-05 |
Family
ID=34643972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003365223A Expired - Fee Related JP4785339B2 (ja) | 2003-10-24 | 2003-10-24 | 表示装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4785339B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4741177B2 (ja) | 2003-08-29 | 2011-08-03 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| US7314785B2 (en) | 2003-10-24 | 2008-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| JP4704006B2 (ja) * | 2003-10-24 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法、並びに電子機器 |
| JP2006344774A (ja) * | 2005-06-09 | 2006-12-21 | Rohm Co Ltd | 有機ｅｌ素子、これを用いた有機ｅｌ表示装置、および有機ｅｌ素子の製造方法 |
| JP5235269B2 (ja) * | 2005-12-19 | 2013-07-10 | エルジー ディスプレイ カンパニー リミテッド | 画像表示装置およびその製造方法 |
| JP5430470B2 (ja) * | 2010-03-31 | 2014-02-26 | 株式会社半導体エネルギー研究所 | 発光装置、及びその作製方法 |
| JP6296187B2 (ja) * | 2012-07-31 | 2018-03-20 | 株式会社Ｊｏｌｅｄ | 表示装置および電子機器 |
| JP6142151B2 (ja) * | 2012-07-31 | 2017-06-07 | 株式会社Ｊｏｌｅｄ | 表示装置および電子機器 |
| CN110767676B (zh) * | 2018-08-06 | 2022-04-15 | 昆山国显光电有限公司 | 透明显示面板、显示屏和显示终端 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0846045A (ja) * | 1994-05-27 | 1996-02-16 | Sanyo Electric Co Ltd | 半導体装置 |
| TW364275B (en) * | 1996-03-12 | 1999-07-11 | Idemitsu Kosan Co | Organic electroluminescent element and organic electroluminescent display device |
| JP2001176673A (ja) * | 1999-12-14 | 2001-06-29 | Tdk Corp | 有機ｅｌ素子 |
| JP2002083689A (ja) * | 2000-06-29 | 2002-03-22 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| JP4223218B2 (ja) * | 2001-02-19 | 2009-02-12 | 株式会社半導体エネルギー研究所 | 発光装置 |
| JP4255643B2 (ja) * | 2001-02-21 | 2009-04-15 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
| JP4101529B2 (ja) * | 2001-02-22 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法 |
| JP2003114626A (ja) * | 2001-06-18 | 2003-04-18 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法 |
| JP4101511B2 (ja) * | 2001-12-27 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
-
2003
- 2003-10-24 JP JP2003365223A patent/JP4785339B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102699702B1 (ko) | 박막트랜지스터 어레이 기판 | |
| TWI535034B (zh) | 畫素結構及其製作方法 | |
| TWI542014B (zh) | 薄膜電晶體及其製造方法、具備薄膜電晶體之影像顯示裝置 | |
| JP2006313906A5 (enExample) | ||
| CN104298040B (zh) | 一种coa基板及其制作方法和显示装置 | |
| JP4141309B2 (ja) | 半導体装置およびその製造方法 | |
| JP2005078946A5 (enExample) | ||
| TWI405335B (zh) | 半導體結構及其製造方法 | |
| US20120175607A1 (en) | Thin film transistor structure and manufacturing method thereof | |
| US10054814B2 (en) | Array substrate, manufacturing method thereof, and display apparatus | |
| JP2005150105A5 (enExample) | ||
| WO2016008226A1 (zh) | 薄膜晶体管及其制备方法、阵列基板和显示设备 | |
| US20180114864A1 (en) | Thin-film transistor, method for fabricating the same, array substrate and display panel containing the same | |
| WO2013086909A1 (zh) | 阵列基板及其制造方法、显示装置 | |
| CN103956386A (zh) | 薄膜晶体管及制备方法、阵列基板及制备方法和显示装置 | |
| JP5284582B2 (ja) | 有機薄膜トランジスタの製造方法 | |
| CN103745954B (zh) | 显示装置、阵列基板及其制造方法 | |
| JP2005129415A5 (enExample) | ||
| US20180061867A1 (en) | Methods of protecting semiconductor oxide channel in hybrid tft process flow | |
| KR20200007937A (ko) | Tft 기판의 제조방법 | |
| US9923067B2 (en) | Thin-film transistor and method for fabricating the same, array substrate and method for fabricating the same, and display device | |
| US20140291665A1 (en) | Thin film transistor array panel and manufacturing method thereof | |
| JP6440228B2 (ja) | 薄膜トランジスタ基板の製造方法 | |
| CN105118864B (zh) | 薄膜晶体管及其制作方法、显示器件 | |
| CN105304651B (zh) | 阵列基板、显示器及阵列基板的制备方法 |