JP5284582B2 - 有機薄膜トランジスタの製造方法 - Google Patents
有機薄膜トランジスタの製造方法 Download PDFInfo
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- JP5284582B2 JP5284582B2 JP2006351666A JP2006351666A JP5284582B2 JP 5284582 B2 JP5284582 B2 JP 5284582B2 JP 2006351666 A JP2006351666 A JP 2006351666A JP 2006351666 A JP2006351666 A JP 2006351666A JP 5284582 B2 JP5284582 B2 JP 5284582B2
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- 239000010409 thin film Substances 0.000 title claims description 83
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 239000010408 film Substances 0.000 claims description 126
- 239000010410 layer Substances 0.000 claims description 116
- 239000004065 semiconductor Substances 0.000 claims description 77
- 239000000758 substrate Substances 0.000 claims description 61
- 239000012790 adhesive layer Substances 0.000 claims description 59
- 230000002209 hydrophobic effect Effects 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 33
- 229920002120 photoresistant polymer Polymers 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 28
- 239000011810 insulating material Substances 0.000 claims description 24
- 238000009832 plasma treatment Methods 0.000 claims description 18
- 229910010272 inorganic material Inorganic materials 0.000 claims description 9
- 239000011147 inorganic material Substances 0.000 claims description 9
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims description 9
- 229920000123 polythiophene Polymers 0.000 claims description 9
- 238000012958 reprocessing Methods 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 7
- 230000007423 decrease Effects 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims 2
- 239000002313 adhesive film Substances 0.000 description 35
- 239000011368 organic material Substances 0.000 description 21
- 239000004973 liquid crystal related substance Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 14
- 239000004642 Polyimide Substances 0.000 description 10
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 10
- 229920001721 polyimide Polymers 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 239000011651 chromium Substances 0.000 description 9
- 229910000838 Al alloy Inorganic materials 0.000 description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052804 chromium Inorganic materials 0.000 description 8
- 239000007769 metal material Substances 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 8
- 239000011733 molybdenum Substances 0.000 description 8
- 239000004205 dimethyl polysiloxane Substances 0.000 description 7
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 150000003657 tungsten Chemical class 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- -1 polydimethylsiloxane Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
- H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
Description
112 ゲート電極
114 ゲート絶縁膜
114a,114b 接着層
Claims (5)
- 基板上にゲート電極を形成する段階と、
前記ゲート電極を含む基板の全面に有機絶縁物質のゲート絶縁膜を形成する段階と、
前記ゲート絶縁膜上にプラズマ処理工程を行い、親水性の第1接着層を形成する段階と、
前記第1接着層上にソース/ドレーン金属層を形成し、そのソース/ドレーン金属層上にパターニングされたフォトレジストを形成し、前記パターニングされたフォトレジストをマスクで利用して前記ソース/ドレーン金属層をパターニングして、ソース/ドレーン電極を形成する段階と、
前記パターニングされたフォトレジストを残した状態で、前記ソース/ドレーン電極の間の前記第1接着層にO2とCF4との混合ガスを利用してプラズマ再処理工程を行い、疎水性の第2接着層を形成した後、前記パターニングされたフォトレジストを除去する段階と、
前記第2接着層が含まれたゲート絶縁膜上に有機半導体層を形成する段階と、
を含み、
前記疎水性の第2接着層は、前記親水性の第1接着層より前記有機半導体層の グレインサイズを増加させてグレインバウンダリを減少させることを特徴とする有機薄膜トランジスタの製造方法。 - 基板上に有機絶縁物質のバッファ膜を形成する段階と
前記バッファ膜上にプラズマ処理工程を行い、親水性の第1接着層を形成する段階と、
前記第1接着層上にソース/ドレーン金属層を形成し、そのソース/ドレーン金属層上にパターニングされたフォトレジストを形成し、前記パターニングされたフォトレジストをマスクで利用して前記ソース/ドレーン金属層をパターニングして、ソース/ドレーン電極を形成する段階と、
前記パターニングされたフォトレジストを残した状態で、前記ソース/ドレーン電極の間の前記第1接着層にO2とCF4との混合ガスを利用してプラズマ再処理工程を行い、疎水性の第2接着層を形成した後、前記パターニングされたフォトレジストを除去する段階と、
前記第2接着層が形成されたバッファ膜上に有機半導体層及びゲート絶縁膜を順次形成する段階と、
前記ゲート絶縁膜上にゲート電極を形成する段階と、
を含み、
前記疎水性の第2接着層は、前記親水性の第1接着層より前記有機半導体層の グレインサイズを増加させてグレインバウンダリを減少させることを特徴とする有機薄膜トランジスタの製造方法。 - 前記第1接着層を形成するプラズマ処理工程は、O2、H2、He、H2、SF6及びCF4のうち何れか一つのガスまたはこれらの混合ガスを用いて行うことを特徴とする請求項1及び2うち何れか一つに記載の有機薄膜トランジスタの製造方法。
- 前記有機半導体層は、LCPBC、ペンタセン及びポリチオフェンのうち何れか一つを用いることによって形成されることを特徴とする請求項1ないし3うち何れか一つに記載の有機薄膜トランジスタの製造方法。
- 前記ソース/ドレーン電極は、金属無機物質を用いることによって形成されることを特徴とする請求項1ないし4うち何れか一つに記載の有機薄膜トランジスタの製造方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0134406 | 2005-12-29 | ||
KR1020050134410A KR101157980B1 (ko) | 2005-12-29 | 2005-12-29 | 유기박막트랜지스터 및 그 제조방법 |
KR1020050134406A KR101147107B1 (ko) | 2005-12-29 | 2005-12-29 | 유기 박막트랜지스터의 제조방법 |
KR10-2005-0134410 | 2005-12-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007184601A JP2007184601A (ja) | 2007-07-19 |
JP5284582B2 true JP5284582B2 (ja) | 2013-09-11 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006351666A Active JP5284582B2 (ja) | 2005-12-29 | 2006-12-27 | 有機薄膜トランジスタの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8735870B2 (ja) |
JP (1) | JP5284582B2 (ja) |
DE (1) | DE102006055067B4 (ja) |
FR (1) | FR2895836B1 (ja) |
GB (1) | GB2433835B8 (ja) |
TW (1) | TWI318798B (ja) |
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JP4961819B2 (ja) * | 2006-04-26 | 2012-06-27 | 株式会社日立製作所 | 電界効果トランジスタ及びその製造方法 |
KR101256544B1 (ko) * | 2006-08-24 | 2013-04-19 | 엘지디스플레이 주식회사 | 유기 박막트랜지스터 액정표시장치 및 그 제조방법 |
US7759677B2 (en) * | 2006-09-05 | 2010-07-20 | Electronics And Telecommunications Research Institute | Molecular electronic device including organic dielectric thin film and method of fabricating the same |
TWI345835B (en) * | 2007-01-02 | 2011-07-21 | Chunghwa Picture Tubes Ltd | Organic thin film transistor and method for manufacturing thereof |
DE102008009022B3 (de) * | 2008-02-13 | 2009-11-26 | Korea University Industrial & Academic Collaboration Foundation | Dünnschichttransistor und logische Schaltung unter Verwendung einer nanokristallinen Dünnschicht als aktiver Schicht und Verfahren zu dessen Herstellung |
GB0814534D0 (en) * | 2008-08-08 | 2008-09-17 | Cambridge Display Tech Ltd | Transistors |
TWI394305B (zh) * | 2009-10-08 | 2013-04-21 | Nat Univ Tsing Hua | 有機薄膜電晶體之製備方法以及有機薄膜電晶體之閘極介電層表面處理方法 |
GB2480876B (en) * | 2010-06-04 | 2015-02-25 | Plastic Logic Ltd | Conductive elements in organic electronic devices |
TWI595621B (zh) | 2012-07-03 | 2017-08-11 | 元太科技工業股份有限公司 | 畫素結構及其製造方法 |
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2006
- 2006-11-22 DE DE102006055067.6A patent/DE102006055067B4/de active Active
- 2006-11-24 GB GB0623486A patent/GB2433835B8/en active Active
- 2006-11-30 FR FR0610453A patent/FR2895836B1/fr active Active
- 2006-12-06 TW TW095145524A patent/TWI318798B/zh active
- 2006-12-22 US US11/644,243 patent/US8735870B2/en active Active
- 2006-12-27 JP JP2006351666A patent/JP5284582B2/ja active Active
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2014
- 2014-04-16 US US14/254,289 patent/US9224965B2/en active Active
Also Published As
Publication number | Publication date |
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GB2433835B8 (en) | 2008-12-17 |
GB0623486D0 (en) | 2007-01-03 |
FR2895836A1 (fr) | 2007-07-06 |
US20140225096A1 (en) | 2014-08-14 |
JP2007184601A (ja) | 2007-07-19 |
US9224965B2 (en) | 2015-12-29 |
TWI318798B (en) | 2009-12-21 |
GB2433835B (en) | 2008-11-19 |
FR2895836B1 (fr) | 2011-11-04 |
DE102006055067B4 (de) | 2017-04-20 |
DE102006055067A1 (de) | 2007-07-12 |
US20070152210A1 (en) | 2007-07-05 |
TW200725912A (en) | 2007-07-01 |
GB2433835A8 (en) | 2008-12-17 |
US8735870B2 (en) | 2014-05-27 |
GB2433835A (en) | 2007-07-04 |
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