TWI318798B - Organic thin film transistor and method for manufacturing the same - Google Patents

Organic thin film transistor and method for manufacturing the same

Info

Publication number
TWI318798B
TWI318798B TW095145524A TW95145524A TWI318798B TW I318798 B TWI318798 B TW I318798B TW 095145524 A TW095145524 A TW 095145524A TW 95145524 A TW95145524 A TW 95145524A TW I318798 B TWI318798 B TW I318798B
Authority
TW
Taiwan
Prior art keywords
manufacturing
thin film
same
film transistor
organic thin
Prior art date
Application number
TW095145524A
Other languages
English (en)
Other versions
TW200725912A (en
Inventor
Chang Wook Han
Jae Yoon Lee
Original Assignee
Lg Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050134406A external-priority patent/KR101147107B1/ko
Priority claimed from KR1020050134410A external-priority patent/KR101157980B1/ko
Application filed by Lg Display Co Ltd filed Critical Lg Display Co Ltd
Publication of TW200725912A publication Critical patent/TW200725912A/zh
Application granted granted Critical
Publication of TWI318798B publication Critical patent/TWI318798B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
TW095145524A 2005-12-29 2006-12-06 Organic thin film transistor and method for manufacturing the same TWI318798B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050134406A KR101147107B1 (ko) 2005-12-29 2005-12-29 유기 박막트랜지스터의 제조방법
KR1020050134410A KR101157980B1 (ko) 2005-12-29 2005-12-29 유기박막트랜지스터 및 그 제조방법

Publications (2)

Publication Number Publication Date
TW200725912A TW200725912A (en) 2007-07-01
TWI318798B true TWI318798B (en) 2009-12-21

Family

ID=37636463

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095145524A TWI318798B (en) 2005-12-29 2006-12-06 Organic thin film transistor and method for manufacturing the same

Country Status (6)

Country Link
US (2) US8735870B2 (zh)
JP (1) JP5284582B2 (zh)
DE (1) DE102006055067B4 (zh)
FR (1) FR2895836B1 (zh)
GB (1) GB2433835B8 (zh)
TW (1) TWI318798B (zh)

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KR101256544B1 (ko) * 2006-08-24 2013-04-19 엘지디스플레이 주식회사 유기 박막트랜지스터 액정표시장치 및 그 제조방법
US7759677B2 (en) * 2006-09-05 2010-07-20 Electronics And Telecommunications Research Institute Molecular electronic device including organic dielectric thin film and method of fabricating the same
TWI345835B (en) * 2007-01-02 2011-07-21 Chunghwa Picture Tubes Ltd Organic thin film transistor and method for manufacturing thereof
DE102008009022B3 (de) * 2008-02-13 2009-11-26 Korea University Industrial & Academic Collaboration Foundation Dünnschichttransistor und logische Schaltung unter Verwendung einer nanokristallinen Dünnschicht als aktiver Schicht und Verfahren zu dessen Herstellung
GB0814534D0 (en) * 2008-08-08 2008-09-17 Cambridge Display Tech Ltd Transistors
TWI394305B (zh) * 2009-10-08 2013-04-21 Nat Univ Tsing Hua 有機薄膜電晶體之製備方法以及有機薄膜電晶體之閘極介電層表面處理方法
GB2480876B (en) * 2010-06-04 2015-02-25 Plastic Logic Ltd Conductive elements in organic electronic devices
TWI595621B (zh) 2012-07-03 2017-08-11 元太科技工業股份有限公司 畫素結構及其製造方法
KR101445044B1 (ko) * 2012-11-30 2014-09-26 주식회사 엘지화학 플렉서블 기판을 포함하는 유기 발광 소자 및 이의 제조방법
US10607932B2 (en) 2016-07-05 2020-03-31 E Ink Holdings Inc. Circuit structure
US10103201B2 (en) 2016-07-05 2018-10-16 E Ink Holdings Inc. Flexible display device
CN106299125B (zh) * 2016-10-27 2019-06-11 武汉华星光电技术有限公司 一种有机薄膜晶体管及其制作方法
CN108878650B (zh) * 2017-05-10 2021-12-03 元太科技工业股份有限公司 有机薄膜晶体管
GB2567897A (en) * 2017-10-31 2019-05-01 Flexenable Ltd Source-drain conductors for organic TFTS
JP7108478B2 (ja) * 2018-06-21 2022-07-28 株式会社ジャパンディスプレイ 表示装置
GB2586039A (en) * 2019-07-31 2021-02-03 Flexenable Ltd Stack Patterning

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JP3022443B2 (ja) 1997-11-05 2000-03-21 日本電気株式会社 半導体デバイスおよびその製造方法
EP1192676A1 (en) * 1999-06-21 2002-04-03 Cambridge University Technical Services Limited Aligned polymers for an organic tft
JP2003518754A (ja) * 1999-12-21 2003-06-10 プラスティック ロジック リミテッド 溶液処理された素子
JP2002148597A (ja) 2000-11-13 2002-05-22 Matsushita Electric Ind Co Ltd 液晶表示素子用基板とそれを用いた液晶表示素子とその製造方法
US6919158B2 (en) 2001-08-03 2005-07-19 Fuji Photo Film Co., Ltd. Conductive pattern material and method for forming conductive pattern
WO2003015255A1 (de) 2001-08-10 2003-02-20 Ebm-Papst St. Georgen Gmbh & Co. Kg Verfahren zur steuerung der kommutierung bei einem elektronisch kommutierten motor, und elektronisch kommutierter motor zur durchführung eines solchen verfahrens
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KR100592503B1 (ko) * 2004-02-10 2006-06-23 진 장 유기 반도체의 선택적 증착을 통한 박막트랜지스터 어레이제조 방법
JP2005251809A (ja) 2004-03-01 2005-09-15 Seiko Epson Corp 薄膜トランジスタの製造方法、薄膜トランジスタ、薄膜トランジスタ回路、電子デバイスおよび電子機器
JP4557755B2 (ja) * 2004-03-11 2010-10-06 キヤノン株式会社 基板、導電性基板および有機電界効果型トランジスタの各々の製造方法
JP2005277204A (ja) 2004-03-25 2005-10-06 Mitsubishi Chemicals Corp 有機電界効果トランジスタ
US7019328B2 (en) * 2004-06-08 2006-03-28 Palo Alto Research Center Incorporated Printed transistors
JP4502382B2 (ja) * 2004-11-02 2010-07-14 キヤノン株式会社 有機トランジスタ
JP2006269599A (ja) * 2005-03-23 2006-10-05 Sony Corp パターン形成方法、有機電界効果型トランジスタの製造方法、及び、フレキシブルプリント回路板の製造方法
KR100683777B1 (ko) * 2005-05-24 2007-02-20 삼성에스디아이 주식회사 유기박막 트랜지스터 및 그의 제조방법과 유기 박막트랜지스터를 구비한 평판표시장치

Also Published As

Publication number Publication date
GB2433835B (en) 2008-11-19
US8735870B2 (en) 2014-05-27
US20140225096A1 (en) 2014-08-14
US9224965B2 (en) 2015-12-29
FR2895836B1 (fr) 2011-11-04
JP5284582B2 (ja) 2013-09-11
JP2007184601A (ja) 2007-07-19
GB2433835B8 (en) 2008-12-17
FR2895836A1 (fr) 2007-07-06
GB2433835A (en) 2007-07-04
TW200725912A (en) 2007-07-01
GB0623486D0 (en) 2007-01-03
DE102006055067A1 (de) 2007-07-12
US20070152210A1 (en) 2007-07-05
DE102006055067B4 (de) 2017-04-20
GB2433835A8 (en) 2008-12-17

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