FR2895836B1 - Transistor a couches minces organiques et procede pour sa fabrication. - Google Patents

Transistor a couches minces organiques et procede pour sa fabrication.

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Publication number
FR2895836B1
FR2895836B1 FR0610453A FR0610453A FR2895836B1 FR 2895836 B1 FR2895836 B1 FR 2895836B1 FR 0610453 A FR0610453 A FR 0610453A FR 0610453 A FR0610453 A FR 0610453A FR 2895836 B1 FR2895836 B1 FR 2895836B1
Authority
FR
France
Prior art keywords
thin film
film transistor
organic thin
manufacturing same
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0610453A
Other languages
English (en)
Other versions
FR2895836A1 (fr
Inventor
Chang Wook Han
Jae Yoon Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Display Co Ltd
Original Assignee
LG Philips LCD Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050134410A external-priority patent/KR101157980B1/ko
Priority claimed from KR1020050134406A external-priority patent/KR101147107B1/ko
Application filed by LG Philips LCD Co Ltd filed Critical LG Philips LCD Co Ltd
Publication of FR2895836A1 publication Critical patent/FR2895836A1/fr
Application granted granted Critical
Publication of FR2895836B1 publication Critical patent/FR2895836B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
FR0610453A 2005-12-29 2006-11-30 Transistor a couches minces organiques et procede pour sa fabrication. Active FR2895836B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050134410A KR101157980B1 (ko) 2005-12-29 2005-12-29 유기박막트랜지스터 및 그 제조방법
KR1020050134406A KR101147107B1 (ko) 2005-12-29 2005-12-29 유기 박막트랜지스터의 제조방법

Publications (2)

Publication Number Publication Date
FR2895836A1 FR2895836A1 (fr) 2007-07-06
FR2895836B1 true FR2895836B1 (fr) 2011-11-04

Family

ID=37636463

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0610453A Active FR2895836B1 (fr) 2005-12-29 2006-11-30 Transistor a couches minces organiques et procede pour sa fabrication.

Country Status (6)

Country Link
US (2) US8735870B2 (fr)
JP (1) JP5284582B2 (fr)
DE (1) DE102006055067B4 (fr)
FR (1) FR2895836B1 (fr)
GB (1) GB2433835B8 (fr)
TW (1) TWI318798B (fr)

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JP4961819B2 (ja) * 2006-04-26 2012-06-27 株式会社日立製作所 電界効果トランジスタ及びその製造方法
KR101256544B1 (ko) * 2006-08-24 2013-04-19 엘지디스플레이 주식회사 유기 박막트랜지스터 액정표시장치 및 그 제조방법
US7759677B2 (en) * 2006-09-05 2010-07-20 Electronics And Telecommunications Research Institute Molecular electronic device including organic dielectric thin film and method of fabricating the same
TWI345835B (en) * 2007-01-02 2011-07-21 Chunghwa Picture Tubes Ltd Organic thin film transistor and method for manufacturing thereof
DE102008009022B3 (de) * 2008-02-13 2009-11-26 Korea University Industrial & Academic Collaboration Foundation Dünnschichttransistor und logische Schaltung unter Verwendung einer nanokristallinen Dünnschicht als aktiver Schicht und Verfahren zu dessen Herstellung
GB0814534D0 (en) * 2008-08-08 2008-09-17 Cambridge Display Tech Ltd Transistors
TWI394305B (zh) * 2009-10-08 2013-04-21 Nat Univ Tsing Hua 有機薄膜電晶體之製備方法以及有機薄膜電晶體之閘極介電層表面處理方法
GB2480876B (en) * 2010-06-04 2015-02-25 Plastic Logic Ltd Conductive elements in organic electronic devices
TWI595621B (zh) 2012-07-03 2017-08-11 元太科技工業股份有限公司 畫素結構及其製造方法
US9871228B2 (en) * 2012-11-30 2018-01-16 Lg Display Co., Ltd. Organic light emitting device comprising flexible substrate and method for preparing thereof
US10103201B2 (en) 2016-07-05 2018-10-16 E Ink Holdings Inc. Flexible display device
US10607932B2 (en) 2016-07-05 2020-03-31 E Ink Holdings Inc. Circuit structure
CN106299125B (zh) * 2016-10-27 2019-06-11 武汉华星光电技术有限公司 一种有机薄膜晶体管及其制作方法
CN108878650B (zh) * 2017-05-10 2021-12-03 元太科技工业股份有限公司 有机薄膜晶体管
GB2567897A (en) * 2017-10-31 2019-05-01 Flexenable Ltd Source-drain conductors for organic TFTS
JP7108478B2 (ja) * 2018-06-21 2022-07-28 株式会社ジャパンディスプレイ 表示装置
GB2586039A (en) * 2019-07-31 2021-02-03 Flexenable Ltd Stack Patterning

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JP3022443B2 (ja) 1997-11-05 2000-03-21 日本電気株式会社 半導体デバイスおよびその製造方法
AU777444B2 (en) * 1999-06-21 2004-10-14 Flexenable Limited Aligned polymers for an organic TFT
JP2003518754A (ja) * 1999-12-21 2003-06-10 プラスティック ロジック リミテッド 溶液処理された素子
JP2002148597A (ja) 2000-11-13 2002-05-22 Matsushita Electric Ind Co Ltd 液晶表示素子用基板とそれを用いた液晶表示素子とその製造方法
EP1282175A3 (fr) * 2001-08-03 2007-03-14 FUJIFILM Corporation Configuration d'un matériau conducteur et sa méthode de fabrication
EP1415390B1 (fr) 2001-08-10 2005-03-23 ebm-papst St. Georgen GmbH & Co. KG Procede pour commander la commutation dans un moteur a commutation electronique et moteur a commutation electronique permettant la mise en oeuvre de ce procede
WO2003052841A1 (fr) * 2001-12-19 2003-06-26 Avecia Limited Transistor a effet de champ organique dote d'un dielectrique organique
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JP4415653B2 (ja) 2003-11-19 2010-02-17 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JP2005166315A (ja) 2003-11-28 2005-06-23 Toshiba Matsushita Display Technology Co Ltd 有機ｅｌ表示装置
KR100592503B1 (ko) * 2004-02-10 2006-06-23 진 장 유기 반도체의 선택적 증착을 통한 박막트랜지스터 어레이제조 방법
JP2005251809A (ja) 2004-03-01 2005-09-15 Seiko Epson Corp 薄膜トランジスタの製造方法、薄膜トランジスタ、薄膜トランジスタ回路、電子デバイスおよび電子機器
JP4557755B2 (ja) * 2004-03-11 2010-10-06 キヤノン株式会社 基板、導電性基板および有機電界効果型トランジスタの各々の製造方法
JP2005277204A (ja) 2004-03-25 2005-10-06 Mitsubishi Chemicals Corp 有機電界効果トランジスタ
US7019328B2 (en) * 2004-06-08 2006-03-28 Palo Alto Research Center Incorporated Printed transistors
JP4502382B2 (ja) * 2004-11-02 2010-07-14 キヤノン株式会社 有機トランジスタ
JP2006269599A (ja) * 2005-03-23 2006-10-05 Sony Corp パターン形成方法、有機電界効果型トランジスタの製造方法、及び、フレキシブルプリント回路板の製造方法
KR100683777B1 (ko) * 2005-05-24 2007-02-20 삼성에스디아이 주식회사 유기박막 트랜지스터 및 그의 제조방법과 유기 박막트랜지스터를 구비한 평판표시장치

Also Published As

Publication number Publication date
GB2433835B (en) 2008-11-19
JP2007184601A (ja) 2007-07-19
FR2895836A1 (fr) 2007-07-06
DE102006055067B4 (de) 2017-04-20
TW200725912A (en) 2007-07-01
DE102006055067A1 (de) 2007-07-12
GB2433835B8 (en) 2008-12-17
JP5284582B2 (ja) 2013-09-11
US20070152210A1 (en) 2007-07-05
GB2433835A8 (en) 2008-12-17
GB2433835A (en) 2007-07-04
US8735870B2 (en) 2014-05-27
US20140225096A1 (en) 2014-08-14
US9224965B2 (en) 2015-12-29
GB0623486D0 (en) 2007-01-03
TWI318798B (en) 2009-12-21

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