BR0016660A - Método para formar um transistor, transistor, e circuito lógico e dispositivo de exibição ou de memória - Google Patents
Método para formar um transistor, transistor, e circuito lógico e dispositivo de exibição ou de memóriaInfo
- Publication number
- BR0016660A BR0016660A BR0016660-0A BR0016660A BR0016660A BR 0016660 A BR0016660 A BR 0016660A BR 0016660 A BR0016660 A BR 0016660A BR 0016660 A BR0016660 A BR 0016660A
- Authority
- BR
- Brazil
- Prior art keywords
- transistor
- forming
- display
- memory device
- logic circuit
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000000463 material Substances 0.000 abstract 5
- 239000002904 solvent Substances 0.000 abstract 3
- 238000000151 deposition Methods 0.000 abstract 2
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Dram (AREA)
- Non-Volatile Memory (AREA)
Abstract
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9930217.6A GB9930217D0 (en) | 1999-12-21 | 1999-12-21 | Solutiion processed transistors |
GBGB0009911.9A GB0009911D0 (en) | 1999-12-21 | 2000-04-20 | Solution processed devices |
PCT/GB2000/004934 WO2001047043A1 (en) | 1999-12-21 | 2000-12-21 | Solution processed devices |
Publications (1)
Publication Number | Publication Date |
---|---|
BR0016660A true BR0016660A (pt) | 2003-02-25 |
Family
ID=26244154
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR0016660-0A BR0016660A (pt) | 1999-12-21 | 2000-12-21 | Método para formar um transistor, transistor, e circuito lógico e dispositivo de exibição ou de memória |
Country Status (8)
Country | Link |
---|---|
US (2) | US6905906B2 (pt) |
EP (1) | EP1243034A1 (pt) |
JP (1) | JP2003518754A (pt) |
CN (1) | CN100483774C (pt) |
AU (1) | AU781584B2 (pt) |
BR (1) | BR0016660A (pt) |
CA (1) | CA2394881A1 (pt) |
WO (1) | WO2001047043A1 (pt) |
Families Citing this family (155)
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WO2002045868A2 (en) * | 2000-12-06 | 2002-06-13 | Cambridge University Technical Services Limited | Patterned deposition using compressed carbon dioxide |
JP2005520668A (ja) | 2001-07-09 | 2005-07-14 | プラスティック ロジック リミテッド | 溶液に影響される整列 |
GB2379083A (en) * | 2001-08-20 | 2003-02-26 | Seiko Epson Corp | Inkjet printing on a substrate using two immiscible liquids |
US6946676B2 (en) * | 2001-11-05 | 2005-09-20 | 3M Innovative Properties Company | Organic thin film transistor with polymeric interface |
EP2207217A1 (en) | 2001-12-19 | 2010-07-14 | Merck Patent GmbH | Organic field effect transistor with an organic dielectric |
GB0130485D0 (en) * | 2001-12-21 | 2002-02-06 | Plastic Logic Ltd | Self-aligned printing |
FR2836263B1 (fr) * | 2002-02-19 | 2005-02-04 | Banque De France | Document de securite a circuit integre |
GB0207134D0 (en) | 2002-03-27 | 2002-05-08 | Cambridge Display Tech Ltd | Method of preparation of organic optoelectronic and electronic devices and devices thereby obtained |
NL1020312C2 (nl) * | 2002-04-05 | 2003-10-07 | Otb Groep B V | Werkwijze en inrichting voor het vervaardigen van een display, zoals bijvoorbeeld een polymere OLED display, een display en een substraat ten gebruike bij de werkwijze. |
US6784017B2 (en) * | 2002-08-12 | 2004-08-31 | Precision Dynamics Corporation | Method of creating a high performance organic semiconductor device |
AU2003275533A1 (en) | 2002-09-25 | 2004-04-19 | Konica Minolta Holdings, Inc. | Electric circuit, thin film transistor, method for manufacturing electric circuit and method for manufacturing thin film transistor |
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US7317048B2 (en) | 2003-01-06 | 2008-01-08 | E.I. Du Pont De Nemours And Company | Variable resistance poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) for use in electronic devices |
US7005088B2 (en) | 2003-01-06 | 2006-02-28 | E.I. Du Pont De Nemours And Company | High resistance poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) for use in high efficiency pixellated polymer electroluminescent devices |
KR20080106361A (ko) * | 2003-02-05 | 2008-12-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 레지스트 패턴의 형성방법 및 반도체장치의 제조방법 |
WO2004070819A1 (ja) * | 2003-02-05 | 2004-08-19 | Semiconductor Energy Laboratory Co., Ltd. | 表示装置の製造方法 |
EP1592054A4 (en) * | 2003-02-05 | 2010-08-25 | Semiconductor Energy Lab | METHOD FOR MANUFACTURING A SCREEN |
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JPWO2004070809A1 (ja) * | 2003-02-06 | 2006-05-25 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
KR101145350B1 (ko) * | 2003-02-06 | 2012-05-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 및 표시장치의 제조 방법 |
CN100392828C (zh) * | 2003-02-06 | 2008-06-04 | 株式会社半导体能源研究所 | 显示装置的制造方法 |
KR101229385B1 (ko) * | 2003-02-06 | 2013-02-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 제조장치 |
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WO2001047043A1 (en) | 2001-06-28 |
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AU781584B2 (en) | 2005-06-02 |
AU2206601A (en) | 2001-07-03 |
US20030059975A1 (en) | 2003-03-27 |
CA2394881A1 (en) | 2001-06-28 |
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