JP5284582B2 - Method for producing organic thin film transistor - Google Patents

Method for producing organic thin film transistor Download PDF

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JP5284582B2
JP5284582B2 JP2006351666A JP2006351666A JP5284582B2 JP 5284582 B2 JP5284582 B2 JP 5284582B2 JP 2006351666 A JP2006351666 A JP 2006351666A JP 2006351666 A JP2006351666 A JP 2006351666A JP 5284582 B2 JP5284582 B2 JP 5284582B2
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formed
adhesive layer
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layer
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JP2007184601A (en
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敞 ▲ウク▼ 韓
在 允 李
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エルジー ディスプレイ カンパニー リミテッド
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Priority to KR1020050134406A priority patent/KR101147107B1/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508Field-effect devices, e.g. TFTs
    • H01L51/0512Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508Field-effect devices, e.g. TFTs
    • H01L51/0512Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0516Field-effect devices, e.g. TFTs insulated gate field effect transistors characterised by the gate dielectric
    • H01L51/0529Field-effect devices, e.g. TFTs insulated gate field effect transistors characterised by the gate dielectric the gate dielectric having a multilayered structure
    • H01L51/0533Combinations of organic and inorganic layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508Field-effect devices, e.g. TFTs
    • H01L51/0512Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0545Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/10Details of devices
    • H01L51/102Electrodes
    • H01L51/105Ohmic contacts, e.g. source and drain electrodes

Description

  The present invention relates to a thin film transistor and a method for manufacturing the same, and more particularly to an organic thin film transistor and a method for manufacturing the same.

  A thin film transistor is usually used as a switching element in an image display. Among thin film transistors, an organic thin film transistor uses a semiconductive organic material as a semiconductor layer material and uses a flexible substrate instead of a glass substrate. Except for this, it has a structure similar in structure to a silicon thin film transistor.

  As shown in FIG. 1, the organic thin film transistor includes a gate electrode 52a formed using metal on the lower substrate 51, a gate insulating film 53 formed on the lower substrate 51 including the gate electrode 52a, and a gate electrode 52a. An organic semiconductor layer 54 formed on the gate insulating film 53 including the source electrode 55a and the drain electrode 55b respectively formed on the gate insulating film 53 so as to be overlapped with both edges, and the source / drain electrodes 55a and 55b. It consists of.

  The source / drain electrodes 55a and 55b are formed using a metal inorganic material such as palladium (Pd) or silver (Ag).

  In the organic thin film transistor as described above, the gate insulating film 53 can be formed of an organic material. However, the gate insulating film 53 formed of an organic material and a source / source formed of an inorganic material, that is, a metal. In order to improve the adhesive force between the drain electrodes 55a and 55b, a plasma surface treatment is performed on the gate insulating film 53.

  However, the plasma-processed gate insulating film 53 has hydrophilicity, and when an organic semiconductor layer is formed on the hydrophilic gate insulating film 53, the organic semiconductor layer having a small grain. To grow.

  FIG. 2A shows a grain structure of an organic semiconductor layer formed on a hydrophobic gate insulating film without plasma treatment, and FIG. 2B shows a hydrophilic gate with plasma treatment. The grain structure of the organic-semiconductor layer formed on the insulating film is shown. Comparing these, it can be seen that the grain structure of the organic semiconductor layer formed on the hydrophilic gate insulating film is smaller than the grain structure of the organic semiconductor layer formed on the hydrophobic gate insulating film.

  In a conventional organic thin film transistor, when an organic semiconductor layer having a small grain size is formed on a hydrophilic gate insulating film, the grain boundary acts as a charge trap site due to the small grain size. ) Increases, the electrical characteristics of the organic semiconductor layer deteriorate.

  The present invention is for solving the above-mentioned problems, and an object of the present invention is to reduce the contact resistance generated at the contact surface between the source / drain electrode and the organic semiconductor, thereby improving the device characteristics. It is an object to provide a thin film transistor and a manufacturing method thereof.

  In order to achieve the above object, an organic thin film transistor according to the present invention includes a gate electrode formed on a substrate, a gate insulating film formed on the gate electrode, and the gate electrode formed on the gate insulating film. Formed between the source / drain electrode and the gate insulating film, the organic semiconductor layer formed on the gate insulating film including the source / drain electrode, and the source / drain electrode overlapped with both edges of the source / drain electrode. And a hydrophilic first adhesive layer, and a hydrophobic second adhesive layer formed between the gate insulating film and the organic semiconductor layer.

  In order to achieve the above object, an organic thin film transistor according to the present invention includes a buffer film formed on a substrate, a source / drain electrode formed in an island shape on the buffer film, and the source / drain electrode. An organic semiconductor layer, a gate insulating film formed on a substrate including the organic semiconductor layer, a gate electrode formed on the gate insulating film so as to overlap the source / drain electrode, and the source / A hydrophilic first adhesive layer formed between the drain electrode and the buffer film, and a hydrophobic second adhesive layer formed between the buffer film and the organic semiconductor layer.

  In order to achieve the above object, a method of manufacturing an organic thin film transistor according to the present invention includes a step of forming a gate electrode on a substrate, a step of forming a gate insulating film on the entire surface of the substrate including the gate electrode, and the gate insulation Performing a plasma treatment process on the film to form a hydrophilic first adhesive layer; forming a source / drain electrode on the first adhesive layer; and the first between the source / drain electrodes. Performing a plasma reprocessing step on the adhesive layer to form a hydrophobic second adhesive layer; and forming an organic semiconductor layer on the gate insulating film including the second adhesive layer.

  In order to achieve the above object, a method of manufacturing an organic thin film transistor according to the present invention includes a step of forming a buffer film on a substrate, and a plasma treatment process is performed on the buffer film to form a hydrophilic first adhesive layer. Forming a source / drain electrode on the first adhesive layer; and performing a plasma reprocessing process on the first adhesive layer between the source / drain electrodes to form a hydrophobic second adhesive layer. A step of sequentially forming an organic semiconductor layer and a gate insulating film on the buffer film on which the second adhesive layer is formed; and a step of forming a gate electrode on the gate insulating film.

  The mold is formed by using a thermosetting material including polydimethylsiloxane (PDMS).

  In order to achieve the above object, a method of manufacturing an organic thin film transistor according to the present invention includes a step of forming a buffer film on a substrate, and a plasma treatment process is performed on the buffer film to form a hydrophilic first adhesive layer. Contacting a mold with a predetermined region of the first adhesive layer to form a hydrophobic second adhesive layer; forming a source / drain electrode on the first adhesive layer; Forming an organic semiconductor layer on the buffer film on which the drain electrode and the second adhesive layer are formed; and forming a gate insulating film and a gate electrode on the organic semiconductor layer, respectively.

  According to the organic thin film transistor and the method of manufacturing the same according to the present invention, the grain size of the organic semiconductor layer defined as the channel region is increased by forming the organic semiconductor layer on the insulating film of the organic material converted to hydrophobic. Since the grain boundary acting as a charge trap site is reduced, the electrical characteristics of the organic semiconductor layer can be improved.

  In addition, according to the organic thin film transistor and the method of manufacturing the same according to the present invention, the hydrophilic adhesive film formed between the source / drain electrode and the organic material buffer film in the plasma processing step can increase the adhesion between these films. There is an effect that it can be increased.

  3A to 3D are cross-sectional views for explaining a method of manufacturing an organic thin film transistor according to the first embodiment of the present invention, and FIG. 4 is a diagram of a liquid crystal display device using the organic thin film transistor according to the first embodiment of the present invention. It is sectional drawing.

  First, as shown in FIG. 3D, the organic thin film transistor according to the first embodiment of the present invention is formed of a gate electrode 112 formed of a metal material on the substrate 110 and an organic material on the entire surface of the substrate 110 including the gate electrode 112. The source electrode 116a and the drain electrode 116b formed of a metal material on the gate insulating film 114 and the source / drain electrodes 116a and 116b so as to overlap the gate insulating film 114 and both edges of the gate electrode 112. An organic semiconductor layer 120 formed of LCPBC (Liquid Crystalline Polyfluorene Block copolymer), pentacene, polythiophene, or the like on the gate insulating film 114 including the source / drain electrodes 116a and 116b and the gate. A hydrophilic adhesive layer 114a formed in a contact region with the edge film 114, and a contact region between the organic semiconductor layer 120 and the gate insulating film 114, that is, a hydrophobic adhesive layer 114b formed in a channel region. Configured.

  The hydrophilic adhesive layer 114a is formed only in the contact region between the source / drain electrodes 116a and 116b and the gate insulating film 114, and improves the adhesive force between these films. In addition, since the organic semiconductor layer 120 is formed on the gate insulating film 114 on which the hydrophobic adhesive layer 114b is formed, the grain size of the organic semiconductor layer 120 is increased and the grain boundary acting as a charge trap site is reduced. As a result, the electrical characteristics of the organic semiconductor layer are improved.

  Hereinafter, a method for manufacturing the organic thin film transistor as described above will be described.

  First, as shown in FIG. 3A, after depositing a metal on a glass or transparent plastic substrate 110, a gate electrode 112 is formed by patterning using a photo-etching technique.

  The gate electrode 112 is made of at least one or more of low-resistance metal materials such as chromium (Cr), copper (Cu), molybdenum (Mo), aluminum (Al), aluminum alloy, and tungsten (W) series.

  Thereafter, an organic insulating material is applied to the entire surface of the substrate 100 including the gate electrode 112 to form a gate insulating film 114.

  The gate insulating film 114 is formed using an organic insulating material such as BCB (Benzocyclobutylene), an acrylic material, or polyimide.

  Subsequently, a plasma treatment process is performed on the gate insulating film 114 to form a hydrophilic adhesive film 114 a on the surface of the gate insulating film 114.

The plasma treatment is performed using any one gas of O 2 , H 2 , He, H 2 , SF 6, and CF 4 or a mixed gas thereof.

  As shown in FIG. 3B, a metal layer is formed on the upper surface of the adhesive film 114a, a photoresist 118 is applied on the metal layer, and a photomask having a predetermined pattern formed on the photoresist 118 is aligned. The photoresist 118 is patterned by irradiating with light and then developing. Subsequently, the metal layer is selectively etched using the patterned photoresist 118 as a mask to form source / drain electrodes 116a and 116b.

  The source / drain electrodes 116a and 116b are made of at least one or more of low-resistance metal inorganic materials such as chromium, molybdenum, aluminum, and aluminum alloy.

  In addition, the hydrophilic adhesive film 114a formed by the plasma treatment process increases the adhesive force between the gate insulating film 114 made of an organic material and the inorganic material, that is, the source / drain electrodes 116a and 116b of the metal layer.

  Subsequently, as shown in FIG. 3C, a plasma reprocessing step is performed on the entire surface of the substrate 100 with the photoresist 118 left above the source / drain electrodes 116a and 116b. As a result, the adhesive layer 114a exposed through the patterned photoresist 118 changes to a hydrophobic adhesive layer 114b, and a hydrophilic adhesive layer is formed only at the contact portion between the source / drain electrodes 116a and 116b and the gate insulating film 114. 114a remains.

The plasma reprocessing step is performed using a mixed gas of O 2 and CF 2 .

  As shown in FIG. 3D, the patterned photoresist 118 is removed, an organic material is applied to the entire surface of the gate insulating film 114 including the source / drain electrodes 116a and 116b, and then the organic semiconductor layer 120 is formed by patterning. Thus, an organic thin film transistor is completed.

  The organic semiconductor layer is formed of an organic material such as LCPBC, pentacene, or polythiophene.

  At this time, since the organic semiconductor layer 120 is formed on the gate insulating film 114 on which the hydrophobic adhesive layer 114b is formed, the grain size of the organic semiconductor layer 120 is increased and the grain boundary acting as a charge trap site is formed. Therefore, the electrical characteristics of the organic semiconductor layer are improved.

  In addition, as shown in FIG. 4, the liquid crystal display device including the organic thin film transistor according to the first embodiment has an organic insulating material such as BCB, an acrylic material, and polyimide on a substrate 110 on which the organic thin film transistor is formed. And a pixel electrode 124 formed of ITO or IZO in the pixel region of the protective film 122 so as to be connected to the drain electrode 116b through the contact hole 119. The upper substrate 132 bonded to the lower substrate 110 is connected to the black matrix 130 that blocks light except the pixel region, the color filter layer 128 for realizing the hue, and the pixels. And a common electrode 126 for the purpose. The upper substrate 132 and the lower substrate 110 are bonded together with a predetermined space, and a liquid crystal layer 131 is formed between them.

  Further, in the organic light emitting field effect device (not shown) having the organic thin film transistor according to the first embodiment as described above, the upper substrate bonded to the substrate 110 having the organic thin film transistor is attached to the first substrate. An organic light emitting diode having one electrode, a second electrode, and an organic light emitting layer between the first electrode and the second electrode is formed.

  As described above, in the first embodiment of the present invention, the bottom-gate structure of the organic thin film transistor has been described. However, in the second embodiment of the present invention described below, the top of the structure of the organic thin film transistor is described. The gate structure will be described.

  5A to 5D are cross-sectional views for explaining a method of manufacturing an organic thin film transistor according to the second embodiment of the present invention, and FIG. 6 illustrates a liquid crystal display device using the organic thin film transistor according to the second embodiment of the present invention. It is sectional drawing.

  First, as shown in FIG. 5D, the organic thin film transistor according to the second embodiment of the present invention is formed of a buffer film 212 formed of an organic material on a substrate 210 and an island-shaped metal layer on the buffer film 212, respectively. Source / drain electrodes 214a, 214b, an organic semiconductor layer 216 formed of LCPBC, pentacene, polythiophene, or the like on the source / drain electrodes 214a, 214b and the buffer film 212, and a gate insulation formed on the organic semiconductor layer 217. A gate electrode 220 formed on the gate insulating film 218 so as to overlap the film 218, the source / drain electrodes 214a, 214b, and a contact region between the source / drain electrodes 214a, 214b and the buffer film 212. Hydrophilic adhesive layer 212a and organic semi-conductive layer Contact area between the body layer 216 and the buffer layer 212, i.e., composed of a hydrophobic adhesive layer 212b formed in the channel region.

  However, the hydrophilic adhesive layer 212a is formed only in the contact region between the source / drain electrodes 214a and 214b and the buffer film 212, and improves the adhesive force between these films. In addition, by forming the organic semiconductor layer 217 on the buffer film 212 on which the hydrophobic adhesive layer 212b is formed, the grain size of the organic semiconductor layer 217 increases and the grain boundary acting as a charge trap site decreases. The electrical characteristics of the organic semiconductor layer 217 are improved.

  Hereinafter, a method for manufacturing the organic thin film transistor as described above will be described.

  First, as shown in FIG. 5A, a buffer film 212 is formed on a glass or transparent plastic substrate 210.

  The buffer film 212 is deposited to improve the crystal growth of the organic semiconductor layer to be formed later, and is formed of an organic insulating material such as BCB, an acrylic material, or polyimide.

  Subsequently, a plasma treatment process is performed on the buffer film 212 to form a hydrophilic adhesive film 212 a on the surface of the buffer film 212.

The plasma treatment is performed using any one gas of O 2 , H 2 , He, H 2 , SF 6, and CF 4 or a mixed gas thereof.

  Subsequently, as shown in FIG. 5B, a metal layer is formed on the upper surface of the adhesive film 212a, a photoresist 216 is applied on the metal layer, and a photomask having a predetermined pattern formed on the photoresist 216 is formed. Are aligned, and then exposed by irradiating light rays, and then developed to pattern the photoresist 216. Subsequently, the metal layer is selectively etched using the patterned photoresist 216 as a mask to form source / drain electrodes 214a and 214b.

  The source / drain electrodes 214a and 214b are made of at least one or more of low-resistance metal inorganic materials such as chromium, molybdenum, aluminum, and aluminum alloy.

  The hydrophilic adhesive film 212a formed in the plasma processing step increases the adhesive force between the organic material buffer film 212 and the inorganic material, that is, the source / drain electrodes 214a and 214b of the metal layer.

  Subsequently, as shown in FIG. 5C, a plasma reprocessing process is performed on the entire surface of the substrate 210 on which the patterned photoresist 216 is formed. As a result, the adhesive layer 212a exposed through the patterned photoresist 216 is changed to a hydrophobic adhesive layer 212b, and a hydrophilic adhesive layer 212a is formed only at the contact portion between the source / drain electrodes 214a and 214b and the buffer film 212. Will remain.

The plasma reprocessing step is performed using a mixed gas of O 2 and CF 2 .

  Finally, as shown in FIG. 5D, the patterned photoresist 216 is removed, an organic material is applied to the entire surface of the substrate including the source / drain electrodes 214a and 214b, and then patterned to form an organic semiconductor layer 217. .

  The organic semiconductor layer 217 is formed of an organic material such as LCPBC, pentacene, or polythiophene.

  At this time, since the organic semiconductor layer 217 is formed on the buffer film 212 on which the hydrophobic adhesive layer 212b is formed, the grain size of the organic semiconductor layer 217 defined as the channel region increases, and the charge trap site Since the acting grain boundary is reduced, the electrical characteristics of the organic semiconductor layer 217 are improved.

  Subsequently, an inorganic insulating material is deposited on the organic semiconductor layer 217 or an organic insulating material is applied to form the gate insulating film 218.

  The gate insulating film 218 is formed of an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx), or an organic insulating material such as BCB, an acrylic material, or polyimide. However, it is preferable to form the gate insulating film using an organic insulating material rather than an inorganic insulating material for contact characteristics with an organic semiconductor layer formed thereafter.

  After depositing a metal on the gate insulating film 218, patterning is performed by a photo-etching technique, and the gate electrode 220 is formed so as to overlap the source / drain electrodes 214a and 214b, thereby completing the organic thin film transistor.

  The gate electrode 220 is made of at least one or more of metallic materials such as chromium, copper, molybdenum, aluminum, aluminum alloy, and tungsten series.

  In addition, as shown in FIG. 6, the liquid crystal display device including the organic thin film transistor according to the second embodiment includes a protection formed by an organic insulating material such as BCB, an acrylic material, and polyimide on the substrate 210 on which the organic thin film transistor is formed. A film electrode 222 and a pixel electrode 224 formed of ITO or IZO are further provided in the pixel region of the protective film 222 so as to be connected to the drain electrode 214 b through the contact hole 219. The upper substrate 232 bonded to and opposed to the lower substrate 210 has a black matrix 230 that blocks light in a portion excluding the pixel region, a color filter layer 228 for realizing hue, and a pixel drive. And a common electrode 226. The upper substrate 232 and the lower substrate 210 are bonded together with a predetermined space, and a liquid crystal layer 231 is formed between them.

  In addition, in the organic light emitting field effect device (not shown) in which the organic thin film transistor according to the second embodiment is formed, the upper substrate bonded to the substrate 210 on which the organic thin film transistor is formed is connected to the first substrate. An organic light emitting diode having one electrode, a second electrode, and an organic light emitting layer between the first electrode and the second electrode is formed.

  7A to 7D are cross-sectional views for explaining a method of manufacturing an organic thin film transistor according to the third embodiment of the present invention. FIG. 8 illustrates a liquid crystal display device using the organic thin film transistor according to the third embodiment of the present invention. It is sectional drawing.

  First, as shown in FIG. 7D, the organic thin film transistor according to the third embodiment of the present invention is formed of a gate electrode 412 formed of a metal material on the substrate 410 and an organic material on the entire surface of the substrate 410 including the gate electrode 412. The source electrode 416a and the drain electrode 416b formed of a metal material on the gate insulating film 414 and the source / drain electrodes 416a and 416b so that both edges of the gate insulating film 414 and the gate electrode 412 overlap each other. An organic semiconductor layer 420 formed of LCPBC, pentacene, polythiophene, or the like on the gate insulating film 414 including a hydrophilic adhesive layer 414a formed in a contact region between the source / drain electrodes 416a and 416b and the gate insulating film 414. And organic semiconductor layer 420 and gate insulating film 4 4 formed on the contact area to consist of a hydrophobic adhesive layer 414b.

  The hydrophilic adhesive layer 414a is formed only in the contact region between the source / drain electrodes 416a and 416b and the gate insulating film 414, and improves the adhesive force between these films. In addition, since the organic semiconductor layer 420 is formed over the gate insulating film 414 on which the hydrophobic adhesive layer 414b is formed, the grain size of the organic semiconductor layer 420 is increased and the grain boundary acting as a charge trap site is reduced. Therefore, the electrical characteristics of the organic semiconductor layer 420 are improved.

  Hereinafter, a method for manufacturing the organic thin film transistor as described above will be described.

  First, as shown in FIG. 7A, after depositing a metal on a glass or transparent plastic substrate 410, a gate electrode 412 is formed by patterning using a photo-etching technique.

  The gate electrode 412 is made of at least one or more of low resistance metal materials such as chromium, copper, molybdenum, aluminum, aluminum alloy, and tungsten series.

  Next, an organic insulating material is applied to the entire surface of the substrate 410 including the gate electrode 412 to form a gate insulating film 414.

  The gate insulating film 414 is formed using an organic insulating material such as BCB, an acrylic material, or polyimide.

  Subsequently, a plasma treatment process is performed on the gate insulating film 414 to form a hydrophilic adhesive film 414 a on the surface of the gate insulating film 414.

The plasma treatment is performed using any one gas of O 2 , H 2 , He, H 2 , SF 6, and CF 4 or a mixed gas thereof.

  Subsequently, as shown in FIG. 7B, the mold 415 is brought into contact with a predetermined region on the hydrophilic adhesive film 414a, and the region in contact with the mold 415 is changed to a hydrophobic adhesive film 414b.

  Here, the mold 415 is a thermosetting material containing polydimethylsiloxane (hereinafter referred to as “PDMS”), and is manufactured by a separate process.

  Specifically, when the mold 415 containing PDMS is pressed against the hydrophilic adhesive film 414a, the region in contact with the mold 415 is changed to a hydrophobic region by separating the —OH group of the terminal group on the surface, A hydrophobic adhesive film 414b is formed.

  Therefore, the hydrophobic adhesive film 414b and the hydrophilic adhesive film 414a coexist as the adhesive film.

  As shown in FIG. 7C, the mold 415 is removed, and a metal layer is formed over the gate insulating film 414 on which the hydrophobic adhesive film 414b and the hydrophilic adhesive film 414a are formed. Subsequently, a photoresist (not shown) is applied on the metal layer, and a photomask having a predetermined pattern formed on the photoresist is aligned, exposed to light, and then developed. To pattern the photoresist. Subsequently, the metal layer is selectively etched using the patterned photoresist as a mask to form source / drain electrodes 416a and 416b on the hydrophilic adhesive film 414a.

  The source / drain electrodes 416a and 416b are made of at least one or more of low-resistance metal inorganic materials such as chromium, molybdenum, aluminum, and aluminum alloy.

  The hydrophilic adhesive film 414a formed in the plasma processing step increases the adhesive force between the source / drain electrodes 416a and 416b and the organic material gate insulating film 414.

  Subsequently, as shown in FIG. 7D, an organic material is applied to the entire surface of the gate insulating film 414 on which the source / drain electrodes 416a and 416b and the hydrophobic adhesive film 414b are formed, and then patterned to form the organic semiconductor layer 420. By forming, an organic thin film transistor is completed.

  The organic semiconductor layer 420 is formed of an organic material such as LCPBC, pentacene, or polythiophene.

  At this time, the organic semiconductor layer 420 is formed on the gate insulating film 414 on which the hydrophobic adhesive film 414b is formed by contact with the mold 415, thereby increasing the grain size of the organic semiconductor layer 420 defined as the channel region. In addition, since the grain boundary acting as a charge trap site is reduced, the electrical characteristics of the organic semiconductor layer 420 are improved.

  In addition, as shown in FIG. 8, the liquid crystal display device including the organic thin film transistor according to the third embodiment is formed on a substrate 410 on which the organic thin film transistor is formed using an organic insulating material such as BCB, an acrylic material, or polyimide. The formed protective film 422 and a pixel electrode 424 formed of ITO or IZO are further provided in the pixel region of the protective film 422 so as to be connected to the drain electrode 416b through the contact hole 419. An upper substrate 432 bonded to the lower substrate 410 is connected to a black matrix 430 that blocks light in a portion excluding the pixel region, a color filter layer 428 for realizing a hue, and pixels. And a common electrode 426. The upper substrate 432 and the lower substrate 410 are bonded together with a predetermined space, and a liquid crystal layer 431 is formed between them.

  In the organic light emitting field effect device (not shown) in which the organic thin film transistor according to the third embodiment is formed, the upper substrate bonded to the substrate 410 on which the organic thin film transistor is formed is connected to the first substrate. An organic light emitting diode having one electrode, a second electrode, and an organic light emitting layer between the first electrode and the second electrode is formed.

  As described above, in the third embodiment of the present invention, the bottom-gate structure of the structure of the organic thin film transistor has been described. However, in the fourth embodiment of the present invention, the top- The gate structure will be described.

  9A to 9D are cross-sectional views for explaining a method of manufacturing an organic thin film transistor according to the fourth embodiment of the present invention, and FIG. 10 illustrates a liquid crystal display device using the organic thin film transistor according to the fourth embodiment of the present invention. It is sectional drawing.

  First, as shown in FIG. 9D, the organic thin film transistor according to the fourth embodiment of the present invention is formed of a buffer film 512 formed of an organic material on a substrate 510 and an island-shaped metal layer on the buffer film 512, respectively. Source / drain electrodes 514a and 514b, organic semiconductor layers 516 such as LCPBC, pentacene, and polythiophene formed on the source / drain electrodes 514a and 514b and the buffer film 512, and gate insulation formed on the organic semiconductor layer 516 A gate electrode 520 formed on the gate insulating film 518 so as to overlap the film 518, the source / drain electrodes 514a and 514b, and a contact region between the source / drain electrodes 514a and 514b and the buffer film 512. Hydrophilic adhesive layer 512a and organic semiconductor layer 16 and composed of an adhesive layer 512b of the hydrophobic formed in the contact area between the buffer layer 512.

  However, the hydrophilic adhesive layer 512a is formed only in the contact region between the source / drain electrodes 514a and 514b and the buffer film 512, and improves the adhesive force between these films. In addition, since the organic semiconductor layer 516 is formed on the buffer film 512 on which the hydrophobic adhesive layer 512b is formed, the grain size of the organic semiconductor layer 516 is increased, and the grain boundary acting as a charge trap site is reduced. Therefore, the electrical characteristics of the organic semiconductor layer 516 are improved.

  Hereinafter, a method for manufacturing the organic thin film transistor as described above will be described.

  First, as shown in FIG. 9A, a buffer film 512 is formed on a glass or transparent plastic substrate 510.

  The buffer film 512 is deposited to improve the crystal growth of the organic semiconductor layer to be formed thereafter, and is formed of an organic insulating material such as BCB, an acrylic material, or polyimide.

  Subsequently, a plasma treatment process is performed on the buffer film 512 to form a hydrophilic adhesive film 512 a on the surface of the buffer film 512.

The plasma treatment is performed using any one gas of O 2 , H 2 , He, H 2 , SF 6, and CF 4 or a mixed gas thereof.

  Subsequently, as shown in FIG. 9B, the mold 513 is brought into contact with a predetermined region on the hydrophilic adhesive film 512a, and the region in contact with the mold 513 is converted into a hydrophobic adhesive film 512b.

  Here, the mold 513 is a thermosetting material including PDMS, and is manufactured by a separate process.

  Specifically, when the mold 513 containing PDMS is pressed against the hydrophilic adhesive film 512a, the region in contact with the mold 513 is changed to a hydrophobic region by separating the —OH group of the terminal group on the surface, A hydrophobic adhesive film 512b is formed.

  Therefore, the hydrophobic adhesive film 512b and the hydrophilic adhesive film 512a coexist as the adhesive film.

  As shown in FIG. 9C, the mold 513 is removed, a metal layer is formed on the buffer film 512 on which the hydrophilic adhesive film 512a and the hydrophobic adhesive film 512b are formed, and a photoresist (FIG. (Not shown) is applied, and a photomask having a predetermined pattern formed on the photoresist is aligned, exposed to light, and then developed to pattern the photoresist (not shown). . Subsequently, the metal layer is selectively etched using the patterned photoresist as a mask to form source / drain electrodes 514a and 514b on the adhesive film 512a. Then, the patterned photoresist (not shown) is removed.

  The source / drain electrodes 514a and 514b are made of at least one or more of low-resistance metal inorganic materials such as chromium, molybdenum, aluminum, and aluminum alloy.

  The hydrophilic adhesive film 512a formed by the plasma treatment process increases the adhesive force between the source / drain electrodes 514a and 514b and the organic material buffer film 512.

  Subsequently, as shown in FIG. 9D, an organic material is applied to the entire surface of the buffer film 512 on which the source / drain electrodes 514a and 514b and the hydrophobic adhesive film 512b are formed, and then patterned to form an organic semiconductor layer 516. To do.

  The organic semiconductor layer 516 is formed using an organic material such as LCPBC, pentacene, or polythiophene.

  At this time, the organic semiconductor layer 516 is formed on the hydrophobic adhesive film 512b formed by the contact with the mold 513, so that the grain size of the organic semiconductor layer defined as the channel region increases, and the charge trap site. Since the acting grain boundary is reduced, the electrical characteristics of the organic semiconductor layer 516 are improved.

  Subsequently, an inorganic insulating material is deposited on the organic semiconductor layer 516 or an organic insulating material is applied to form a gate insulating film 518.

  The gate insulating film 518 is formed of an inorganic insulating material such as silicon oxide or silicon nitride, or an organic insulating material such as BCB, an acrylic material, or polyimide. However, it is preferable to form the gate insulating film 518 using an organic insulating material rather than an inorganic insulating material for contact characteristics with an organic semiconductor layer formed later.

  After depositing a metal on the gate insulating film 518, patterning is performed by a photo-etching technique, and the gate electrode 520 is formed so as to overlap the source / drain electrodes 514a and 514b, thereby completing the organic thin film transistor.

  The gate electrode 520 is made of at least one or more of metal materials such as chromium, copper, molybdenum, aluminum, aluminum alloy, and tungsten series.

  In addition, as shown in FIG. 10, the liquid crystal display device including the organic thin film transistor according to the fourth embodiment is formed of an organic insulating material such as BCB, an acrylic material, or polyimide on the substrate 510 on which the organic thin film transistor is formed. A protective film 522 and a pixel electrode 524 formed of ITO or IZO are further provided in the pixel region of the protective film 522 so as to be connected to the drain electrode 514b through the contact hole 519. The upper substrate 532 bonded to the lower substrate 510 has a black matrix 530 that blocks light in a portion excluding the pixel region, a color filter layer 528 for realizing a hue, and a pixel drive. And a common electrode 526 for performing the above operation. The upper substrate 532 and the lower substrate 510 are bonded together with a predetermined space, and a liquid crystal layer 531 is formed between them.

  In addition, in the organic light emitting field effect device (not shown) in which the organic thin film transistor according to the fourth embodiment is formed, the upper substrate bonded to the substrate 410 on which the organic thin film transistor is formed includes: An organic light emitting diode having a first electrode, a second electrode, and an organic light emitting layer between the first electrode and the second electrode is formed.

  The present invention described above is not limited by the above-described embodiments and the accompanying drawings, and various substitutions, modifications and changes can be made without departing from the technical idea of the present invention. It will be apparent to those skilled in the art to which the invention pertains.

It is sectional drawing which showed the schematic structure of the conventional organic thin-film transistor. It is the photograph which showed the crystal structure of the conventional organic-semiconductor layer. It is the photograph which showed the crystal structure of the conventional organic-semiconductor layer. It is sectional drawing which showed the manufacturing method of the organic thin-film transistor in 1st Embodiment of this invention. It is sectional drawing which showed the manufacturing method of the organic thin-film transistor in 1st Embodiment of this invention. It is sectional drawing which showed the manufacturing method of the organic thin-film transistor in 1st Embodiment of this invention. It is sectional drawing which showed the manufacturing method of the organic thin-film transistor in 1st Embodiment of this invention. It is sectional drawing of the liquid crystal display device using the organic thin-film transistor in 1st Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the organic thin-film transistor in 2nd Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the organic thin-film transistor in 2nd Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the organic thin-film transistor in 2nd Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the organic thin-film transistor in 2nd Embodiment of this invention. It is sectional drawing of the liquid crystal display device using the organic thin-film transistor in 2nd Embodiment of this invention. It is sectional drawing which showed the manufacturing method of the organic thin-film transistor in 3rd Embodiment of this invention. It is sectional drawing which showed the manufacturing method of the organic thin-film transistor in 3rd Embodiment of this invention. It is sectional drawing which showed the manufacturing method of the organic thin-film transistor in 3rd Embodiment of this invention. It is sectional drawing which showed the manufacturing method of the organic thin-film transistor in 3rd Embodiment of this invention. It is sectional drawing of the liquid crystal display device using the organic thin-film transistor in 3rd Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the organic thin-film transistor in 4th Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the organic thin-film transistor in 4th Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the organic thin-film transistor in 4th Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the organic thin-film transistor in 4th Embodiment of this invention. It is sectional drawing of the liquid crystal display device using the organic thin-film transistor in 4th Embodiment of this invention.

Explanation of symbols

110 Substrate 112 Gate electrode 114 Gate insulating film 114a, 114b Adhesive layer

Claims (5)

  1. Forming a gate electrode on the substrate;
    Forming a gate insulating film of an organic insulating material on the entire surface of the substrate including the gate electrode;
    Performing a plasma treatment process on the gate insulating film to form a hydrophilic first adhesive layer;
    Forming a source / drain metal layer on the first adhesive layer, forming a patterned photoresist on the source / drain metal layer, the source / drain metal using the patterned photoresist using mask Patterning the layers to form source / drain electrodes;
    A plasma reprocessing process is performed on the first adhesive layer between the source / drain electrodes using a mixed gas of O 2 and CF 4 while leaving the patterned photoresist, and a hydrophobic first layer is formed. 2 after forming the adhesive layer, removing the patterned photoresist;
    Forming an organic semiconductor layer on the gate insulating layer including the second adhesive layer;
    Including
    The hydrophobic second adhesive layer of the preparation method of the organic thin film transistor and decreases were by grain boundaries increases the grain size of the organic semiconductor layer than the first adhesive layer of the parent aqueous.
  2. Forming a buffer film of an organic insulating material on the substrate; performing a plasma treatment process on the buffer film; and forming a hydrophilic first adhesive layer;
    Forming a source / drain metal layer on the first adhesive layer, forming a patterned photoresist on the source / drain metal layer, the source / drain metal using the patterned photoresist using mask Patterning the layers to form source / drain electrodes;
    A plasma reprocessing process is performed on the first adhesive layer between the source / drain electrodes using a mixed gas of O 2 and CF 4 while leaving the patterned photoresist, and a hydrophobic first layer is formed. 2 after forming the adhesive layer, removing the patterned photoresist;
    Sequentially forming an organic semiconductor layer and a gate insulating film on the buffer film on which the second adhesive layer is formed;
    Forming a gate electrode on the gate insulating film;
    Including
    The hydrophobic second adhesive layer of the preparation method of the organic thin film transistor and decreases were by grain boundaries increases the grain size of the organic semiconductor layer than the first adhesive layer of the parent aqueous.
  3. The plasma treatment process for forming the first adhesive layer is performed using any one gas of O 2 , H 2 , He, H 2 , SF 6 and CF 4 or a mixed gas thereof. The manufacturing method of the organic thin-film transistor as described in any one of Claim 1 and 2.
  4.   4. The method of manufacturing an organic thin film transistor according to claim 1, wherein the organic semiconductor layer is formed by using any one of LCPBC, pentacene, and polythiophene.
  5.   5. The method of manufacturing an organic thin film transistor according to claim 1, wherein the source / drain electrode is formed by using a metal inorganic material.
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US8735870B2 (en) 2014-05-27
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US20140225096A1 (en) 2014-08-14
US20070152210A1 (en) 2007-07-05
DE102006055067B4 (en) 2017-04-20
TWI318798B (en) 2009-12-21
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JP2007184601A (en) 2007-07-19
FR2895836A1 (en) 2007-07-06

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