JP2005117669A - 薄膜バルク音響共振器及びその製造方法 - Google Patents
薄膜バルク音響共振器及びその製造方法 Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02133—Means for compensation or elimination of undesirable effects of stress
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Y10T29/49128—Assembling formed circuit to base
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Y10T29/49002—Electrical device making
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- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49133—Assembling to base an electrical component, e.g., capacitor, etc. with component orienting
- Y10T29/49135—Assembling to base an electrical component, e.g., capacitor, etc. with component orienting and shaping, e.g., cutting or bending, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
【解決手段】本発明に係る薄膜バルク音響共振器は、基板と、基板上に蒸着された保護層と、基板上部の表面と一定の距離隔てるように保護層に蒸着されたメンブレイン層と、前記メンブレイン層の上部に配する積層共振部とを含む。さらにこの製造方法は、基板上にメンブレイン層を蒸着し、メンブレイン層の両側に保護層を形成し、メンブレイン層の上部に積層共振部を蒸着し、保護層との間に位置する前記基板の一部を取除いてエアーギャップを形成する。これにより、素子の集積度が向上し、構造の単純な薄膜バルク音響共振器が作成でき、その製造工程も簡単である。
【選択図】図2
Description
<FBAR>
[構造と作用]
図2は、本発明の好適な実施例に係る薄膜バルク音響共振器の断面図である。図2に示したように、本発明に係るFBARは、エアーギャップ100aを有する基板100と、エアーギャップ100a上部に基板100と離隔されるように蒸着されたメンブレイン層150と、メンブレイン層150の上部に蒸着された積層共振部200からなっている。
次に、以下より、FBARの各製造のステップ別工程について、図を参照しながら詳説する。
100a エアーギャップ
110a 保護層
110b 保護層
150 メンブレイン層
200 積層共振部
210 下部電極
220 圧電層
230 上部電極
Claims (11)
- 基板と、
前記基板上に蒸着された保護層と、
前記基板上部の表面と一定の距離を隔てて形成され、一部が前記保護層に蒸着されているメンブレイン層と、
前記メンブレイン層の上部に配する積層共振部と、
を含むことを特徴とする、薄膜バルク音響共振器。 - 前記保護層は、前記メンブレイン層の両側に蒸着されていることを特徴とする、請求項1に記載の薄膜バルク音響共振器。
- 前記積層共振部は、
前記メンブレイン層の上部に蒸着された下部電極と、
前記下部電極上に蒸着された圧電層と、
前記圧電層の上部に蒸着された上部電極と、
を含むことを特徴とする、請求項1に記載の薄膜バルク音響共振器。 - 前記下部電極は一方の前記保護層の上部まで延長され、前記上部電極は他方の保護層の上部まで延長されることを特徴とする、請求項3に記載の薄膜バルク音響共振器。
- 前記メンブレイン層は単層の窒化膜であることを特徴とする、請求項1に記載の薄膜バルク音響共振器。
- 前記メンブレイン層は、室化膜、酸化膜、室化膜の順に蒸着された複層からなることを特徴とする、請求項1に記載の薄膜バルク音響共振器。
- 基板上にメンブレイン層を蒸着するステップと、
前記メンブレイン層の両側に保護層を形成するステップと、
前記メンブレイン層の上部に積層共振部を蒸着するステップと、
前記保護層の間に位置する前記基板の一部を取除いて、前記基板と前記メンブレイン層との間にエアーギャップを形成するステップと、
を含むことを特徴とする、薄膜バルク音響共振器の製造方法。 - 前記保護層はLOCOS工程により形成されることを特徴とする、請求項7に記載の薄膜バルク音響共振器の製造方法。
- 前記積層共振部を蒸着するステップは、
前記メンブレイン層の上部に下部電極層を蒸着するステップと、
前記下部電極の上部に圧電層を蒸着するステップと、
前記圧電層の上部に上部電極を蒸着するステップと、
を含むことを特徴とする、請求項7に記載の薄膜バルク音響共振器の製造方法。 - 前記エアーギャップの形成は、ドライエッチングによりなされることを特徴とする、請求項7に記載の薄膜バルク音響共振器の製造方法。
- 前記エアーギャップの形成は、ウェットエッチングによりなされることを特徴とする、請求項7に記載の薄膜バルク音響共振器の製造方法。
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KR1020030069838A KR100662865B1 (ko) | 2003-10-08 | 2003-10-08 | 박막 벌크 음향 공진기 및 그 제조방법 |
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JP4115439B2 JP4115439B2 (ja) | 2008-07-09 |
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Cited By (3)
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JP2009212620A (ja) * | 2008-02-29 | 2009-09-17 | Kyocera Corp | 薄膜共振子の製造方法 |
CN109412550A (zh) * | 2017-08-17 | 2019-03-01 | 三星电机株式会社 | 体声波谐振器 |
US10756701B2 (en) | 2017-08-17 | 2020-08-25 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic wave resonator |
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US8291559B2 (en) * | 2009-02-24 | 2012-10-23 | Epcos Ag | Process for adapting resonance frequency of a BAW resonator |
US20110012696A1 (en) * | 2009-07-20 | 2011-01-20 | Sony Ericsson Mobile Communications Ab | Switched acoustic wave resonator for tunable filters |
KR101945723B1 (ko) * | 2011-10-25 | 2019-02-11 | 삼성전자주식회사 | 박막 벌크 음향 공진기 및 박막 벌크 음향 공진기의 제조방법 |
US8910355B2 (en) | 2011-12-12 | 2014-12-16 | International Business Machines Corporation | Method of manufacturing a film bulk acoustic resonator with a loading element |
JPWO2015190429A1 (ja) * | 2014-06-13 | 2017-04-20 | 株式会社村田製作所 | 圧電デバイスおよび圧電デバイスの製造方法 |
WO2016021304A1 (ja) * | 2014-08-05 | 2016-02-11 | 株式会社村田製作所 | 圧電共振器の製造方法および圧電共振器 |
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JP4115439B2 (ja) | 2008-07-09 |
EP1523096B1 (en) | 2013-08-14 |
US7205702B2 (en) | 2007-04-17 |
KR20050034052A (ko) | 2005-04-14 |
US7793395B2 (en) | 2010-09-14 |
US20070157442A1 (en) | 2007-07-12 |
US20050077803A1 (en) | 2005-04-14 |
KR100662865B1 (ko) | 2007-01-02 |
EP1523096A2 (en) | 2005-04-13 |
EP1523096A3 (en) | 2005-10-12 |
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