CN109302159B - 一种复合衬底及该复合衬底制作薄膜体声波谐振器的方法 - Google Patents
一种复合衬底及该复合衬底制作薄膜体声波谐振器的方法 Download PDFInfo
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- CN109302159B CN109302159B CN201810866323.7A CN201810866323A CN109302159B CN 109302159 B CN109302159 B CN 109302159B CN 201810866323 A CN201810866323 A CN 201810866323A CN 109302159 B CN109302159 B CN 109302159B
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- 239000010410 layer Substances 0.000 claims abstract description 81
- 239000010408 film Substances 0.000 claims abstract description 56
- 239000011241 protective layer Substances 0.000 claims abstract description 34
- 239000010409 thin film Substances 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 14
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 7
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229960000583 acetic acid Drugs 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
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- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910010936 LiGaO2 Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
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- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
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- 238000010897 surface acoustic wave method Methods 0.000 description 3
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Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02047—Treatment of substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
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CN201810866323.7A CN109302159B (zh) | 2018-08-01 | 2018-08-01 | 一种复合衬底及该复合衬底制作薄膜体声波谐振器的方法 |
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CN201810866323.7A CN109302159B (zh) | 2018-08-01 | 2018-08-01 | 一种复合衬底及该复合衬底制作薄膜体声波谐振器的方法 |
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CN109302159A CN109302159A (zh) | 2019-02-01 |
CN109302159B true CN109302159B (zh) | 2021-02-26 |
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Families Citing this family (5)
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CN109995341B (zh) * | 2019-03-13 | 2021-11-02 | 电子科技大学 | 具有下电极保护层的空腔型体声波谐振器及其制备方法 |
CN109981070B (zh) * | 2019-03-13 | 2020-06-16 | 电子科技大学 | 一种无需制备牺牲层的空腔型体声波谐振器及其制备方法 |
CN111277240B (zh) * | 2020-03-07 | 2022-05-03 | 中国电子科技集团公司第二十六研究所 | 一种薄膜体声波滤波器的膜层结构及其制备方法 |
WO2023236153A1 (en) * | 2022-06-09 | 2023-12-14 | Intel Corporation | Acoustic wave clock distribution |
CN117713735A (zh) * | 2023-12-11 | 2024-03-15 | 锐石创芯(重庆)科技有限公司 | 弹性波装置、射频前端模组和弹性波装置的制备方法 |
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KR100662865B1 (ko) * | 2003-10-08 | 2007-01-02 | 삼성전자주식회사 | 박막 벌크 음향 공진기 및 그 제조방법 |
JP5136134B2 (ja) * | 2008-03-18 | 2013-02-06 | ソニー株式会社 | バンドパスフィルタ装置、その製造方法、テレビジョンチューナおよびテレビジョン受信機 |
CN102025340B (zh) * | 2010-10-21 | 2013-05-08 | 张�浩 | 声波谐振器及其加工方法 |
CN103303858B (zh) * | 2012-03-10 | 2015-12-09 | 中国科学院微电子研究所 | 采用koh溶液的硅基mems器件湿法释放方法 |
CN104767500B (zh) * | 2014-01-03 | 2018-11-09 | 佛山市艾佛光通科技有限公司 | 空腔型薄膜体声波谐振器及其制备方法 |
CN105081893B (zh) * | 2015-05-13 | 2018-11-06 | 北京通美晶体技术有限公司 | 一种超薄Ge单晶衬底材料及其制备方法 |
CN107181472B (zh) * | 2016-03-10 | 2020-11-03 | 中芯国际集成电路制造(上海)有限公司 | 薄膜体声波谐振器、半导体器件及其制造方法 |
CN106024865A (zh) * | 2016-07-19 | 2016-10-12 | 如皋市大昌电子有限公司 | 一种台面型二极管的加工工艺 |
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Effective date of registration: 20200409 Address after: 510000 Room 303, building 1, No. 23, Jinzhong Road, Huangpu District, Guangzhou City, Guangdong Province Applicant after: Guangzhou Everbright Technology Co.,Ltd. Address before: 517000 Guangdong high tech Development Zone, Heyuan, new high tech five road Applicant before: HEYUAN CHOICORE PHOTOELECTRIC TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20220615 Address after: 517000 second floor, West office area of Gaoxin fifth road and Nijin Road, high tech Development Zone, Heyuan City, Guangdong Province Patentee after: Aifotong Technology Co.,Ltd. Address before: 510000 Room 303, office area, No.23 Jinzhong Road, Huangpu District, Guangzhou City, Guangdong Province Patentee before: Guangzhou Everbright Technology Co.,Ltd. |
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Denomination of invention: A composite substrate and a method for making a thin-film bulk acoustic wave resonator from the composite substrate Effective date of registration: 20220919 Granted publication date: 20210226 Pledgee: Agricultural Bank of China Co.,Ltd. Heyuan Yuancheng District Sub branch Pledgor: Aifotong Technology Co.,Ltd. Registration number: Y2022980015619 |