JP2009022052A - パターン化された音響ミラーを固体的に取り付けられたマルチ共振器バルク音波フィルタ - Google Patents
パターン化された音響ミラーを固体的に取り付けられたマルチ共振器バルク音波フィルタ Download PDFInfo
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- JP2009022052A JP2009022052A JP2008268710A JP2008268710A JP2009022052A JP 2009022052 A JP2009022052 A JP 2009022052A JP 2008268710 A JP2008268710 A JP 2008268710A JP 2008268710 A JP2008268710 A JP 2008268710A JP 2009022052 A JP2009022052 A JP 2009022052A
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- 238000000034 method Methods 0.000 claims abstract description 49
- 238000005530 etching Methods 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 239000003989 dielectric material Substances 0.000 claims abstract description 9
- 239000007769 metal material Substances 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims description 59
- 229910052751 metal Inorganic materials 0.000 claims description 59
- 239000000463 material Substances 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 25
- 230000008878 coupling Effects 0.000 abstract description 8
- 238000010168 coupling process Methods 0.000 abstract description 8
- 238000005859 coupling reaction Methods 0.000 abstract description 8
- 238000002955 isolation Methods 0.000 abstract description 3
- 238000002310 reflectometry Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 155
- 230000004044 response Effects 0.000 description 9
- 230000008021 deposition Effects 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010292 electrical insulation Methods 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012814 acoustic material Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000006187 pill Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02125—Means for compensation or elimination of undesirable effects of parasitic elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Headphones And Earphones (AREA)
- Aerials With Secondary Devices (AREA)
Abstract
【解決手段】(a)音響ミラーとして働く誘電体材料および金属材料を選択する工程と、(b)金属層がエッチング・プロセスによって離散的部分へパターン化され、前記エッチング・プロセスは、異なった共振器部分が置かれるべき場所のあいだの金属層を充分に取り除いて、異なった共振器部分の下にある層部分のあいだに電気絶縁が提供されるようにする作製手順を介して少なくとも1つの金属層を提供する工程とを備え、共振器のあいだの容量結合が減少されたマルチ共振器BAWフィルタを提供する方法。
【選択図】図3
Description
[実施態様1] 複数の共振器部分のために音響ミラーとして働く複数の材料層を有し、各々の共振器部分が圧電体層を挟む少なくとも上部電極と下部電極とを含むマルチ共振器バルク音波(BAW)フィルタを作製する方法であって、(a)音響ミラーとして働く幾つかの材料層のための誘電体材料、および他の層のための金属材料を選択する工程と、(b)金属層がエッチング・プロセスによって離散的部分へパターン化され、前記エッチング・プロセスは、異なった共振器部分が置かれるべき場所のあいだの金属層を充分に取り除いて、異なった共振器部分の下にある層部分のあいだに電気絶縁が提供されるようにする作製手順を介して少なくとも1つの金属層を提供する工程とを備え、それによって、類似の方法で作製される音響ミラーの金属層をパターン化するエッチング・ステップを除外したこと以外では類似した他の方法で作製されたマルチ共振器BAWフィルタに存在する容量結合と比較して、共振器のあいだの容量結合が減少されたマルチ共振器BAWフィルタを提供する方法。
Claims (6)
- 複数の共振器部分のために音響ミラーとして働く複数の材料層を有し、各々の共振器部分が圧電体層を挟む少なくとも上部電極と下部電極とを含むマルチ共振器バルク音波(BAW)フィルタを作製する方法であって、
(a)音響ミラーとして働く幾つかの材料層に用いる誘電体材料、および各共振器部分に用いる金属材料を選択する工程と、
(b)金属層がエッチング・プロセスによって離散的部分へパターン化され、前記エッチング・プロセスは、異なった共振器部分が置かれるべき場所のあいだの金属層を充分に取り除く工程とを備えるマルチ共振器BAWフィルタを提供する方法。 - 音響ミラーのすべての金属層がエッチング・プロセスによって離散的部分へパターン化され、エッチング・プロセスは、異なった共振器部分が置かれるべき場所のあいだの金属層を充分に取り除くようにする請求項1記載の方法。
- 工程(b)が音響ミラーの異なった層を順次に堆積するステップを含み、誘電体層が金属層と交互に積層し共振器に最も近い層は誘電体層であり、各々の金属層はつぎの誘電体層を堆積する前に工程(b)のようにパターン化される請求項1記載の方法。
- 共振器部分の少なくとも1つが、上部電極、ときには接地される中間電極、および下部電極を含む積み重ねられた結晶構造であり、さらに3つの電極のあいだに挟まれた2つの圧電体層を含む請求項1記載の方法。
- 複数の共振器部分のために音響ミラーとして働く複数の材料層を有し、各々の共振器部分が圧電体層を挟む少なくとも上部電極と下部電極とを含むマルチ共振器バルク音波(BAW)フィルタであって、音響ミラーの幾つかの層は誘電体材料から作製され、他の層は金属材料から作製され、さらに、少なくとも1つの金属層はエッチング・プロセスによって離散的部分へパターン化され、前記エッチング・プロセスは、異なった共振器部分が置かれるべき場所のあいだの金属層を充分に取り除くようにするマルチ共振器バルク音波フィルタ。
- すべての金属層がエッチング・プロセスによって離散的部分へパターン化され、エッチング・プロセスは、異なった共振器部分が置かれるべき場所のあいだの金属層を充分に取り除くようにする請求項5記載のマルチ共振器バルク音波フィルタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/753,214 | 2001-01-02 | ||
US09/753,214 US6496085B2 (en) | 2001-01-02 | 2001-01-02 | Solidly mounted multi-resonator bulk acoustic wave filter with a patterned acoustic mirror |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2001388031A Division JP4248177B2 (ja) | 2001-01-02 | 2001-12-20 | パターン化された音響ミラーを固体的に取り付けられたマルチ共振器バルク音波フィルタ |
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JP2009022052A true JP2009022052A (ja) | 2009-01-29 |
JP4838292B2 JP4838292B2 (ja) | 2011-12-14 |
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JP2001388031A Expired - Lifetime JP4248177B2 (ja) | 2001-01-02 | 2001-12-20 | パターン化された音響ミラーを固体的に取り付けられたマルチ共振器バルク音波フィルタ |
JP2008268710A Expired - Fee Related JP4838292B2 (ja) | 2001-01-02 | 2008-10-17 | パターン化された音響ミラーを固体的に取り付けられたマルチ共振器バルク音波フィルタ |
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JP2001388031A Expired - Lifetime JP4248177B2 (ja) | 2001-01-02 | 2001-12-20 | パターン化された音響ミラーを固体的に取り付けられたマルチ共振器バルク音波フィルタ |
Country Status (6)
Country | Link |
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US (1) | US6496085B2 (ja) |
EP (1) | EP1227582B8 (ja) |
JP (2) | JP4248177B2 (ja) |
CN (1) | CN1208898C (ja) |
AT (1) | ATE400084T1 (ja) |
DE (1) | DE60134621D1 (ja) |
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US9602076B1 (en) * | 2015-05-19 | 2017-03-21 | Qorvo Us, Inc. | Resonators with balancing capacitor |
US10581403B2 (en) | 2016-07-11 | 2020-03-03 | Qorvo Us, Inc. | Device having a titanium-alloyed surface |
US10361676B2 (en) * | 2017-09-29 | 2019-07-23 | Qorvo Us, Inc. | Baw filter structure with internal electrostatic shielding |
US11757430B2 (en) | 2020-01-07 | 2023-09-12 | Qorvo Us, Inc. | Acoustic filter circuit for noise suppression outside resonance frequency |
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US11575363B2 (en) | 2021-01-19 | 2023-02-07 | Qorvo Us, Inc. | Hybrid bulk acoustic wave filter |
CN112953449A (zh) * | 2021-03-04 | 2021-06-11 | 偲百创(深圳)科技有限公司 | 横向激励剪切模式的声学谐振器的制造方法 |
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- 2001-12-28 AT AT01310923T patent/ATE400084T1/de not_active IP Right Cessation
- 2001-12-28 EP EP01310923A patent/EP1227582B8/en not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
---|---|
US6496085B2 (en) | 2002-12-17 |
EP1227582A2 (en) | 2002-07-31 |
JP2002251190A (ja) | 2002-09-06 |
ATE400084T1 (de) | 2008-07-15 |
EP1227582B8 (en) | 2008-08-13 |
EP1227582A3 (en) | 2004-09-22 |
JP4838292B2 (ja) | 2011-12-14 |
CN1208898C (zh) | 2005-06-29 |
DE60134621D1 (de) | 2008-08-14 |
US20020084873A1 (en) | 2002-07-04 |
JP4248177B2 (ja) | 2009-04-02 |
CN1365186A (zh) | 2002-08-21 |
EP1227582B1 (en) | 2008-07-02 |
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