JP4071213B2 - カンチレバー状の圧電薄膜素子およびその製造方法 - Google Patents
カンチレバー状の圧電薄膜素子およびその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 58
- 239000010409 thin film Substances 0.000 title claims description 45
- 238000000034 method Methods 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 45
- 238000005530 etching Methods 0.000 claims description 27
- 238000010030 laminating Methods 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 11
- 238000010586 diagram Methods 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 238000000059 patterning Methods 0.000 description 13
- 238000005459 micromachining Methods 0.000 description 11
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 229910052681 coesite Inorganic materials 0.000 description 7
- 229910052906 cristobalite Inorganic materials 0.000 description 7
- 229910052682 stishovite Inorganic materials 0.000 description 7
- 229910052905 tridymite Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H10N30/80—Constructional details
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/022—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the cantilever type
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
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- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49128—Assembling formed circuit to base
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
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Description
まず、バルクマイクロマシニング型FBARは、図1Bに示すように、基板15上に積層された薄膜層16を積層した後、薄膜層16上に下部電極17、圧電層18、および上部電極19を順に積層した構造を有している。この場合、基板15の裏面を異方性エッチングを介してエッチングすることによりエアギャップ15’が形成される。しかし、バルクマイクロマシニング型FBARは、薄膜層16を製造しなければならない面倒があり、基板15のエッチング過程において素子の破損がしばしば発生する問題点がある。
本発明に他の目的は、下部電極が支持体の役割を行うことによってその構造が単純になると共にエアギャップを用いて基板と隔離させることによりQ値の性能を向上できる。また外部端子との連結も容易になされるエアギャュプ型FBARおよびその製造方法を提供することにある。
その一実施形態として、前記下部電極は、前記露出された絶縁層に当接する支持部と犠牲層に当接する突出部とから区分され、前記支持部および突出部は相互連結され前記カンチレバー構造をなすことができる。
尚、前記下部電極の支持部および突出部を平行な状態で製造することができる。
また、前記(b)ステップにおいて、前記空胴部上に積層された絶縁層上に前記犠牲層を積層することが考えられる。
一方、前記下部電極は、前記露出された絶縁層に当接する支持部と前記犠牲層に当接する突出部とによって構成され、互いに平行連結され得る。
尚、前記(e)ステップは、前記支持部を形成する下部電極および圧電層の所定領域をエッチングするステップと、前記下部電極および前記圧電層がエッチングされ露出された前記絶縁層上の所定領域に前記上部電極を蒸着してパッドを作るステップとをさら含むことにより、外部端子と電気的に連結させるパッドを容易に製造することができる。
一方、本発明にかかるエアギャップ圧電薄膜共振素子は、平面状の表面を有する基板と、前記基板の平面状の表面上に積層された絶縁層と、前記絶縁層に当接する支持部および前記絶縁層と所定の距離隔てられ前記絶縁層との間にエアギャップをなす突出部を含むカンチレバー構造の下部電極と、前記下部電極上に積層された圧電層と、前記圧電層上に積層された上部電極と、を含む。
また、前記上部電極上に積層された第2の絶縁層をさらに含むことにより、周波数チューニングのために第2の絶縁層をエッチングしてその厚さを調節することができるようにすることが好ましい。
この場合、前記下部電極は、支持部は前記空胴部を除いた基板領域に積層された絶縁層と当接し、前記突出部は前記支持部と平行に連結され前記空胴部上に浮遊する形態で製造することができる。
尚、前記上部電極は、前記下部電極の支持部と一定の距離隔てられた領域の絶縁層上に形成されたパッドを有しており、外部電極との連結をより安定的に行うことができる。
さらに、CMOSとFBARとを集積する場合、基板上にCMOSを製造した後、本発明に係るFBARを製造すればよいので、既存のCMOS製造設費および技術をそのまま利用することができる。一方、FBARを製造した後、別除絶縁層を上部電極上に蒸着して堅固性を強化することも容易である。またフィルタを形成する場合、前記絶縁層をエッチングして周波数チューニングを容易に行うことができる。
図3Aおよび図3Bは、本発明の一実施形態に応じて製造されたカンチレバー型FBARの端面図である。
同図を参照すると本FBARは、基板100、絶縁層110、下部電極120、圧電層130、および上部電極140を有している。絶縁層110は基板100の全面にわたって積層されており、下部電極120は絶縁層110に当接する支持部190および絶縁層110と一定の距離隔てられた状態で空中に浮遊している突出部180から構成され、図3Aに示すように、支持部190および突出部180はカンチレバー状に連結される。
図3Aに示すカンチレバー型FBARの製造方法につき、図4Aないし図4Fに示されたステップ別製造工程を参照して詳説する。
基板100は、通常、シリコンウェハーが用いられるが、より好適には高抵抗シリコン基板(HRS)を使用する。尚、絶縁層110を形成している絶縁物質としては、酸化珪素(Sio2)または酸化アルミニウム(Al2o2)が使用され得る。
最後に図4Fに示したように、犠牲層160をエッチングしてエアギャップ170を形成する。犠牲層160のエッチングは、湿式エッチング方法または乾式エッチング方式が採用され得る。湿式エッチング方法とは硝酸水溶液、不和水素酸、燐酸水溶液などの化学溶液を用いてエッチングする方法であり、乾式エッチング方法とはガス、プラズマ、イオンビームなどを用いてエッチングされる方法である。かかるエッチング方法は、前のステップにおいて各層をパターニングするときに用いられることができる。尚、犠牲層160をエッチングするために突出部180を貫通するビアーホール(図示せず)を製造した後、ビアーホールを介してエッチング液またはエッチングガスを投入する。
一方、図3Bに示された構造のカンチレバー型のFBARを製造するために、図4Gに示すように、上部電極140上に第2の絶縁層150を加えて積層する工程を行う。この際、共振部300bは下部電極120、圧電層130、および上部電極140以外に第2の絶縁層150まで含む。
さらに、本発明の図2を参照すれば、前記アメリカ特許発明は共振部がSiO2層を含んでいる構造をもつが、かかる構造下では圧電層から発生した音響波がSiO2層において吸収されるなど、損失が生じてQ値を落としてしまう恐れがある。一方、本発明は上下部電極120、140、圧電層130だけでも共振部が構成されるため、割合高いQ値を有し得る。
図6Aによれば、基板200にフォトレジストを用いてパターニングすることにより空胴部270を形成する。基板200のエッチング方法は、前述の湿式エッチング方法か乾式エッチング方法を用いることができる。空胴部270は、基板200と共振部400a、400bを隔離させるためのものであって、深さは数マイクロメータ(大体3μmないし5μm)でよい。
次に、図6Cに示すように、空胴部270内に犠牲層を充填する。この場合、犠牲層260で空胴部270を充填する過程において、空胴部270以外の部分にも犠牲層260が蒸着され得るので、空胴部の両側に蒸着された絶縁層210a、210bが露出するまで平坦化作業を行い、空胴部270にのみ犠牲層260を充填するようにする。平坦化方法としては、リフロー(reflow)、SOGスピンコーティング(SOG spin coating)などの方法があるが、他の平坦化の工程に比べて100〜1000倍の平坦化の範囲を有することのできるCMP(Chemical Mechanical Polishing)方法を用いることが好ましい。
次に、図6Eないし図6Gによれば、前記下部電極220上に圧電層230、上部電極240を順に積層およびパターニングして共振部400aを形成し、犠牲層260を取り除いて空胴部270を形成することにより、最終的なFBARを製造することができる。図6Eないし図6Gに示された工程は、図4Dないし図4Gに図示された工程と類似しているため詳説は除く。
尚、本発明の第3の実施形態として、カンチレバー状のFBARを製造する前、基板にCMOS(Complementary Metal Oxide Semiconductor)を製造し、それから本方法に応じてFBARを製造することによりCMOSと集積することができる。かかる場合、CMOS製造は、既存のCMOS製造工程および設備をそのまま用いるので既存のCMOS製造工程と互換性を有し得る。
図7Cは、図5Aおよび図5Bに示されたFBARについてパッドを製造した場合の模式図である。図7Cによると、平坦化された犠牲層260および絶縁層の一部分210a上に下部電極220を蒸着してから、絶縁層の一端210aと当接する下部電極220を一部除去して、当接される下部電極の幅(l3)が空胴部の上層空間まで突出した下部電極の幅(l4)より小さく製造してパッド600aを形成する。さらに、圧電層230上に上部電極240を蒸着したあと、上部電極240を下部電極220が一部除去された絶縁層210a上で下部電極220のパッド600aと一定の距離隔ててパターニングすることにより、外部端子と接続されるパッド600bを製造することができる。よって、ワイヤーボンディングを使用せずに外部端子と電気的に連結することができる。
110、210a、210、210b 絶縁層
120、220 下部電極
130、230 圧電層
140、240 上部電極
150、250 第2の絶縁層
180、280 突出部
190、290 支持部
300a、400a 共振部
170、270 エアギャップ
Claims (8)
- 圧電薄膜共振素子の製造方法において、
(a)平面状の表面を有する基板上において前記平面状の表面上に絶縁層を積層するステップと、
(b)所定の領域を除いた前記絶縁層の上部に犠牲層を積層するステップと、
(c)前記絶縁層の一部領域および前記犠牲層の所定領域とそれぞれ接するように下部電極を積層するステップと、
(d)前記下部電極上に圧電層を積層するステップと、
(e)前記圧電層上に上部電極層を積層するステップと、
(f)前記犠牲層をエッチングして前記下部電極の一部と前記絶縁層の表面との間にエアギャップを形成することで、前記下部電極がカンチレバー構造をなすようにするステップと、
を含むことを特徴とする圧電薄膜共振素子の製造方法。 - 前記上部電極上に第2の絶縁層を積層するステップをさらに含むことを特徴とする請求項1に記載の圧電薄膜共振素子の製造方法。
- 共振周波数のチューニングのために前記第2の絶縁層をエッチングして厚さを調節するステップをさらに含むことを特徴とする請求項2に記載の圧電薄膜共振素子の製造方法。
- 前記下部電極は、前記露出された絶縁層に当接する支持部と犠牲層に当接する突出部とから区分され、前記支持部および突出部は相互連結され前記カンチレバー構造をなすことを特徴とする請求項1に記載の圧電薄膜共振素子の製造方法。
- 前記(e)ステップは、
前記支持部を形成する下部電極および圧電層の所定領域をエッチングするステップと、
前記下部電極および前記圧電層がエッチングされ露出された前記絶縁層上の所定領域に前記上部電極を蒸着してパッドを作るステップと、
をさらに含むことを特徴とする請求項4に記載の圧電薄膜共振素子の製造方法。 - 平面状の表面を有する基板と、
前記基板の前記平面状の表面上に積層された絶縁層と、
前記絶縁層に当接する支持部および前記絶縁層と所定の距離隔てられ前記絶縁層との間にエアギャップをなす突出部を含むカンチレバー構造の下部電極と、
前記下部電極上に積層された圧電層と、
前記圧電層上に積層された上部電極と、
を含むことを特徴とする圧電薄膜共振素子。 - 前記上部電極上に積層された第2の絶縁層をさらに含むことを特徴とする請求項6に記載の圧電薄膜共振素子。
- 前記上部電極は、前記下部電極の支持部と一定の距離隔てられた領域の絶縁層上に形成されたパッドを有することを特徴とする請求項6に記載の圧電薄膜共振素子。
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US6204747B1 (en) | 1997-11-21 | 2001-03-20 | James L. Kitchens | Safety devices for electrical circuits and systems |
FI106894B (fi) | 1998-06-02 | 2001-04-30 | Nokia Mobile Phones Ltd | Resonaattorirakenteita |
US6060818A (en) | 1998-06-02 | 2000-05-09 | Hewlett-Packard Company | SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters |
FI108583B (fi) * | 1998-06-02 | 2002-02-15 | Nokia Corp | Resonaattorirakenteita |
US6441539B1 (en) * | 1999-11-11 | 2002-08-27 | Murata Manufacturing Co., Ltd. | Piezoelectric resonator |
JP3514207B2 (ja) | 2000-03-15 | 2004-03-31 | 株式会社村田製作所 | 強誘電体薄膜素子ならびにセンサ、および強誘電体薄膜素子の製造方法 |
US6384697B1 (en) * | 2000-05-08 | 2002-05-07 | Agilent Technologies, Inc. | Cavity spanning bottom electrode of a substrate-mounted bulk wave acoustic resonator |
US6377137B1 (en) * | 2000-09-11 | 2002-04-23 | Agilent Technologies, Inc. | Acoustic resonator filter with reduced electromagnetic influence due to die substrate thickness |
KR100377454B1 (ko) | 2001-04-24 | 2003-03-26 | 전자부품연구원 | 기능성 마이크로 소자의 희생층 제거 방법 |
JP2003017964A (ja) | 2001-07-04 | 2003-01-17 | Hitachi Ltd | 弾性波素子の製造方法 |
KR100518103B1 (ko) | 2001-08-10 | 2005-10-04 | 쌍신전자통신주식회사 | 압전박막 공진기 및 그 제조방법 |
US7105988B2 (en) * | 2003-04-30 | 2006-09-12 | Vibration-X Di Bianchini Emanulee E C. Sas | Piezoelectric device and method to manufacture a piezoelectric device |
-
2003
- 2003-04-22 KR KR20030025481A patent/KR100599083B1/ko active IP Right Grant
-
2004
- 2004-04-01 EP EP20040251968 patent/EP1471637B1/en not_active Expired - Lifetime
- 2004-04-20 US US10/827,532 patent/US7281304B2/en active Active
- 2004-04-22 JP JP2004127018A patent/JP4071213B2/ja not_active Expired - Lifetime
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Publication number | Publication date |
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US20050034822A1 (en) | 2005-02-17 |
EP1471637B1 (en) | 2011-03-23 |
EP1471637A2 (en) | 2004-10-27 |
KR100599083B1 (ko) | 2006-07-12 |
EP1471637A3 (en) | 2007-03-28 |
JP2004328745A (ja) | 2004-11-18 |
US7281304B2 (en) | 2007-10-16 |
KR20040093238A (ko) | 2004-11-05 |
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