JP2005101647A5 - - Google Patents
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- Publication number
- JP2005101647A5 JP2005101647A5 JP2004335811A JP2004335811A JP2005101647A5 JP 2005101647 A5 JP2005101647 A5 JP 2005101647A5 JP 2004335811 A JP2004335811 A JP 2004335811A JP 2004335811 A JP2004335811 A JP 2004335811A JP 2005101647 A5 JP2005101647 A5 JP 2005101647A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- region
- memory cell
- forming
- misfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002093 peripheral effect Effects 0.000 claims 85
- 239000004065 semiconductor Substances 0.000 claims 53
- 238000003860 storage Methods 0.000 claims 26
- 239000000758 substrate Substances 0.000 claims 25
- 239000003990 capacitor Substances 0.000 claims 24
- 238000005530 etching Methods 0.000 claims 23
- 239000000463 material Substances 0.000 claims 12
- 238000000034 method Methods 0.000 claims 12
- 238000005498 polishing Methods 0.000 claims 10
- 230000006870 function Effects 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- 239000002184 metal Substances 0.000 claims 4
- 238000009413 insulation Methods 0.000 claims 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 238000010791 quenching Methods 0.000 claims 1
- 230000000171 quenching effect Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004335811A JP3892867B2 (ja) | 2004-11-19 | 2004-11-19 | 半導体集積回路装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004335811A JP3892867B2 (ja) | 2004-11-19 | 2004-11-19 | 半導体集積回路装置およびその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35053797A Division JP3697044B2 (ja) | 1997-12-19 | 1997-12-19 | 半導体集積回路装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005101647A JP2005101647A (ja) | 2005-04-14 |
| JP2005101647A5 true JP2005101647A5 (enExample) | 2005-09-15 |
| JP3892867B2 JP3892867B2 (ja) | 2007-03-14 |
Family
ID=34464375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004335811A Expired - Fee Related JP3892867B2 (ja) | 2004-11-19 | 2004-11-19 | 半導体集積回路装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3892867B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8624328B2 (en) * | 2008-11-19 | 2014-01-07 | Renesas Electronics Corporation | Semiconductor device |
| JP5464928B2 (ja) | 2009-07-02 | 2014-04-09 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP5613033B2 (ja) * | 2010-05-19 | 2014-10-22 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US20120223413A1 (en) | 2011-03-04 | 2012-09-06 | Nick Lindert | Semiconductor structure having a capacitor and metal wiring integrated in a same dielectric layer |
| JP2015233069A (ja) | 2014-06-09 | 2015-12-24 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP6263093B2 (ja) | 2014-06-25 | 2018-01-17 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| CN112262474B (zh) * | 2018-08-07 | 2024-07-16 | 铠侠股份有限公司 | 半导体存储装置 |
-
2004
- 2004-11-19 JP JP2004335811A patent/JP3892867B2/ja not_active Expired - Fee Related
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