JP3892867B2 - 半導体集積回路装置およびその製造方法 - Google Patents
半導体集積回路装置およびその製造方法 Download PDFInfo
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- JP3892867B2 JP3892867B2 JP2004335811A JP2004335811A JP3892867B2 JP 3892867 B2 JP3892867 B2 JP 3892867B2 JP 2004335811 A JP2004335811 A JP 2004335811A JP 2004335811 A JP2004335811 A JP 2004335811A JP 3892867 B2 JP3892867 B2 JP 3892867B2
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- film
- insulating film
- layer wiring
- region
- memory cell
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- 239000004065 semiconductor Substances 0.000 title claims description 138
- 238000004519 manufacturing process Methods 0.000 title claims description 67
- 238000000034 method Methods 0.000 claims description 154
- 239000003990 capacitor Substances 0.000 claims description 101
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 47
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 47
- 238000003860 storage Methods 0.000 claims description 46
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
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- 239000010410 layer Substances 0.000 description 293
- 239000011229 interlayer Substances 0.000 description 66
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 63
- 239000010949 copper Substances 0.000 description 51
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 50
- 229910052802 copper Inorganic materials 0.000 description 49
- 230000008569 process Effects 0.000 description 49
- 239000012535 impurity Substances 0.000 description 36
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 36
- 229910052721 tungsten Inorganic materials 0.000 description 35
- 239000010937 tungsten Substances 0.000 description 35
- 229910052782 aluminium Inorganic materials 0.000 description 34
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 34
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 229910052814 silicon oxide Inorganic materials 0.000 description 24
- 229910052715 tantalum Inorganic materials 0.000 description 23
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 23
- 229920002120 photoresistant polymer Polymers 0.000 description 21
- 238000005229 chemical vapour deposition Methods 0.000 description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 15
- 238000012545 processing Methods 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 13
- 239000010941 cobalt Substances 0.000 description 12
- 229910017052 cobalt Inorganic materials 0.000 description 12
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 12
- 229910052758 niobium Inorganic materials 0.000 description 12
- 239000010955 niobium Substances 0.000 description 12
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 12
- 238000005498 polishing Methods 0.000 description 11
- 238000001312 dry etching Methods 0.000 description 10
- 230000004044 response Effects 0.000 description 10
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 9
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 9
- 229910001936 tantalum oxide Inorganic materials 0.000 description 9
- -1 tungsten nitride Chemical class 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 229910021332 silicide Inorganic materials 0.000 description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 8
- 230000006872 improvement Effects 0.000 description 7
- 238000002955 isolation Methods 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 238000002844 melting Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
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- 239000007769 metal material Substances 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004335811A JP3892867B2 (ja) | 2004-11-19 | 2004-11-19 | 半導体集積回路装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004335811A JP3892867B2 (ja) | 2004-11-19 | 2004-11-19 | 半導体集積回路装置およびその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35053797A Division JP3697044B2 (ja) | 1997-12-19 | 1997-12-19 | 半導体集積回路装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005101647A JP2005101647A (ja) | 2005-04-14 |
| JP2005101647A5 JP2005101647A5 (enExample) | 2005-09-15 |
| JP3892867B2 true JP3892867B2 (ja) | 2007-03-14 |
Family
ID=34464375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004335811A Expired - Fee Related JP3892867B2 (ja) | 2004-11-19 | 2004-11-19 | 半導体集積回路装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3892867B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8624328B2 (en) * | 2008-11-19 | 2014-01-07 | Renesas Electronics Corporation | Semiconductor device |
| JP5464928B2 (ja) | 2009-07-02 | 2014-04-09 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP5613033B2 (ja) * | 2010-05-19 | 2014-10-22 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US20120223413A1 (en) | 2011-03-04 | 2012-09-06 | Nick Lindert | Semiconductor structure having a capacitor and metal wiring integrated in a same dielectric layer |
| JP2015233069A (ja) | 2014-06-09 | 2015-12-24 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP6263093B2 (ja) | 2014-06-25 | 2018-01-17 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| CN112262474B (zh) * | 2018-08-07 | 2024-07-16 | 铠侠股份有限公司 | 半导体存储装置 |
-
2004
- 2004-11-19 JP JP2004335811A patent/JP3892867B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005101647A (ja) | 2005-04-14 |
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