JP3892867B2 - 半導体集積回路装置およびその製造方法 - Google Patents

半導体集積回路装置およびその製造方法 Download PDF

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Publication number
JP3892867B2
JP3892867B2 JP2004335811A JP2004335811A JP3892867B2 JP 3892867 B2 JP3892867 B2 JP 3892867B2 JP 2004335811 A JP2004335811 A JP 2004335811A JP 2004335811 A JP2004335811 A JP 2004335811A JP 3892867 B2 JP3892867 B2 JP 3892867B2
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film
insulating film
layer wiring
region
memory cell
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Japanese (ja)
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JP2005101647A (ja
JP2005101647A5 (enExample
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琢也 福田
譲 大路
伸好 小林
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Renesas Technology Corp
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Renesas Technology Corp
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JP2004335811A 2004-11-19 2004-11-19 半導体集積回路装置およびその製造方法 Expired - Fee Related JP3892867B2 (ja)

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JP2004335811A JP3892867B2 (ja) 2004-11-19 2004-11-19 半導体集積回路装置およびその製造方法

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JP2004335811A JP3892867B2 (ja) 2004-11-19 2004-11-19 半導体集積回路装置およびその製造方法

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JP35053797A Division JP3697044B2 (ja) 1997-12-19 1997-12-19 半導体集積回路装置およびその製造方法

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JP2005101647A JP2005101647A (ja) 2005-04-14
JP2005101647A5 JP2005101647A5 (enExample) 2005-09-15
JP3892867B2 true JP3892867B2 (ja) 2007-03-14

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8624328B2 (en) 2008-11-19 2014-01-07 Renesas Electronics Corporation Semiconductor device
JP5464928B2 (ja) 2009-07-02 2014-04-09 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP5613033B2 (ja) * 2010-05-19 2014-10-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US20120223413A1 (en) 2011-03-04 2012-09-06 Nick Lindert Semiconductor structure having a capacitor and metal wiring integrated in a same dielectric layer
JP2015233069A (ja) 2014-06-09 2015-12-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP6263093B2 (ja) 2014-06-25 2018-01-17 ルネサスエレクトロニクス株式会社 半導体装置
WO2020031265A1 (ja) * 2018-08-07 2020-02-13 キオクシア株式会社 半導体記憶装置
CN114899188A (zh) * 2022-04-22 2022-08-12 长鑫存储技术有限公司 一种半导体结构及制备方法
CN115000070B (zh) * 2022-06-01 2026-07-31 长鑫存储技术有限公司 半导体结构及半导体结构的制作方法

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